NTE89

NTE89 Silicon NPN Transistor Color TV Horizontal Output w/Internal Damper Diode Features: D Color TV Horizontal Output Applications D High Voltage: VCBO = 1500V D Low Saturation Voltage: VCE(sat) = 5V Max (IC = 5A, IB = 1A) D High Speed: tf = 1.0µs Max D Built–In Damper Diode D Glass Passivated Collector–Base Junction Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –6A Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Collector Cutoff Current Emitter–Base Breakdown Voltage DC Current Gain Symbol Min Typ Max Unit VCB = 500V, IE = 0 – – 10 µA V(BR)EBO IE = 200mA, IC = 0 5 – – V 8 12 – ICBO hFE Test Conditions VCE = 5V, IC = 1A Collector–Emitter Saturation Voltage VCE(sat) IC = 5A, IB = 1A – 3 5 V Base–Emitter Saturation Voltage VBE(sat) IC = 5A, IB = 1A – – 1.5 V Forward Voltage (Damper Diode) –VF IF = 6A – 1.6 2.0 V VCE = 10V, IC = 100mA – 3 – MHz VCB = 10V, IE = 0, f = 1MHz – 165 – pF ICP = 5A, IB1(end) = 1A – 0.5 1.0 µs Transition Frequency Collector Output Capacitance Fall Time fT Cob tf COLLECTOR BASE EMITTER .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .040 (1.02) 1.187 (30.16) .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case