NTE96

NTE96 Silicon NPN Transistor Power Switching Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W Operating Junction Temperature Range, Tj(oper) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Typical Forward Current Gain hFE Collector−Emitter Saturation Voltage Test Conditions IC = 2A, VCE = 2V VCE(SAT) IC = 7A, IB = 0.7A Transition Frequency fT Emitter Base Collector (Isolated) .200 (5.08) Dia .425 (10.8) .349 (8.87) .763 (19.4) Max .394 (10.0) .425 (10.8) .052 (1.32) Dia .120 (3.04) 10−32−UNF−2A Min Typ Max Unit 60 − 240 − 1.2 − V 30 − − MHz