NTE99

NTE99 Silicon NPN Transistor Darlington w/Base−Emitter Speed−up Diode TO−3 Type Package Description: The NTE99 is a silicon NPN Darlington transistor in a TO3 type package designed for high−voltage, high−speed, power switching in inductive circuits where fall time is critical. This device is particularly suited for line−operated switchmode applications. Applications: D Switching Regulators D Motor Controls D Inverters D Solenoid and Relay Drivers Features: D Fast Turn−Off Times: 1.0s (max) Inductive Crossover Time − 20 Amps 2.5s (max) Inductive Storage Time − 20 Amps D Operating Temperature Range: −65 to +200C Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector−Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75A Base Current, IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Total Power Dissipation, PD TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43W/C TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7C/W Maximum Lead Temperature (During Soldering, 1/8” from case for 5sec), TL . . . . . . . . . . . . +275C Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle  10%. Rev. 3−16 Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 400 − − V OFF Characteristics (Note 2) Collector−Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0, Vclamp = 400V Collector Cutoff Current ICEV VCEV = 600V, VBE(off) = 1.5V − − 0.25 mA Emitter Cutoff Current IEBO VBE = 2V, IC = 0 − − 350 mA hFE IC = 20A, VCE = 5V 25 − − IC = 40A, VCE = 5V 10 − − IC = 20A, IB = 1A − − 2.2 V IC = 50A, IB = 10A − − 5.0 V VBE(sat) IC = 20A, IB = 1A − − 2.75 V Vf IF = 20A, Note 3 − 2.5 5.0 V VCB = 10V, IE = 0, ftest = 100kHz − − 750 pF VCC = 250V, IC = 20A, IB1 = 1A, VBE(off) = 5V, tp = 25s, Duty Cycle  2% − 0.14 0.3 s − 0.3 1.0 s − 0.8 2.5 s − 0.3 1.0 s − 1.0 2.5 s − 0.36 1.0 s ON Characteristics (Note 2) DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Diode Forward Voltage VCE(sat) Dynamic Characteristic Output Capacitance Cob Switching Characteristics Resistive Load Delay Time td Rise Time tr Storage Time ts Fall Time tf Inductive Load, Clamped Storage Time tsv Crossover Time tc IC = 20A(pk), Vclamp = 250V, IB1 = 1A, VBE(off) = 5V Note 2. Pulse Test: Pulse Widtg = 300s, Duty Cycle  2%. Note 3. The internal Collector−to−Emitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers. Circuit Outline C B [ 50 [8 E .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .060 (1.52) 1.187 (30.16) .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case