PN3638A

PN3638A Silicon PNP Transistor Audio Amplifier, Switch TO−92 Type Package Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.9V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA Total Device Dissipation (TA = 25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Thermal Resistance, Junction to Case, RJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W Thermal Resistance, Junction to Ambient, RJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W Note 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired and are based on a maximum junction temperature of +150C. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit V(BR)CEO IC = 10mA, IB = 0, Note 2 25 − − V V(BR)CES IC = 100A, IB = 0, Note 2 25 − − V Collector−Base Breakdown Voltage V(BR)CBO IC = 10A, IE = 0 25 − − V Emitter−Base Breakdown Voltage V(BR)EBO IE = 10A, IC = 0 4 − − V VCE = 15V, IE = 0 − − 35 nA VCE = 15V, IE = 0, TA = +65C − − 2 A VCE = 1V, IC = 50mA 100 − − VCE = 2V, IC = 300mA 20 − − VCE = 10V, IC = 100mA 80 − − VCE = 10V, IC = 1mA 100 − − IC = 50mA, IB = 2.5mA − − 0.25 V IC = 300mA, IB = 30mA − − 1.0 V IC = 50mA, IB = 2.5mA − − 1.1 V IC = 300mA, IB = 30mA 0.8 − 2.0 V OFF Characteristics Collector−Emitter Breakdown Voltage Collector Cutoff Current ICES ON Characteristics (Note 2) DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage hFE VCE(sat) VBE(sat) Note 2. Pulse Test: Pulse Width  300s, Duty Cycle  2%. Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Small Signal Characteristics Output Capacitance Cob VCB = 10V, f = 1MHz − − 10 pF Input Capacitance Cib VBE = 0.5V, f = 1MHz − − 25 pF Small−Signal Current Gain hfe IC = 50mA, VCE = 3V, f = 100MHz 1.5 − − IC = 10mA, VCE = 10V, f = 1kHz 100 − − IC = 10mA, VCE = 10V, f = 1kHz − − 2 k Input Impedance hfe Output Admittance hoe − − 1.2 mhos Voltage Feedback Ratio hre − − 15 x10−4 75 − − ns 20 − − ns 70 − − ns 170 − − ns 140 − − ns 70 − − ns Switching Characteristics Turn−On Time ton Delay Time td Rise Time tr Turn−Off Time toff Storage Time ts Fall Time tf VCC = 10V, IC = 300mA, IB1 = 30mA VCC = 10V, IC = 300mA, IB1 = IB2 = 30mA .135 (3.45) Min .210 (5.33) Max Seating Plane .500 (12.7) Min .021 (.445) Dia Max E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .205 (5.2) Max .105 (2.67) Max