PN3645

PN3645 Silicon PNP Transistor Audio Amplifier, Switch TO−92 Type Package Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA Total Device Dissipation (TA = 25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Thermal Resistance, Junction to Case, RJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W Thermal Resistance, Junction to Ambient, RJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W Note 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired and are based on a maximum junction temperature of +150C. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector−Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0, Note 2 60 − − V Collector−Base Breakdown Voltage V(BR)CBO IC = 100A, IE = 0 60 − − V Emitter−Base Breakdown Voltage V(BR)EBO IE = 10A, IC = 0 5 − − V VCB = 50V, IE = 0 − − 35 nA VCB = 50V, IE = 0, TA = +65C − − 2 A IBL VCE = 50V, IC = 0 − − 35 nA hFE VCE = 10V, IC = 0.1mA 40 − − VCE = 10V, IC = 1mA 80 − − VCE = 10V, IC = 10mA 100 − − VCE = 10V, IC = 150mA 100 − 300 VCE = 2V, IC = 300mA 20 − − VCE = 1V, IC = 50mA 80 − 240 IC = 50mA, IB = 2.5mA − − 0.25 V IC = 150mA, IB = 15mA − − 0.4 V Collector Cutoff Current Base Cutoff Current ICES ON Characteristics (Note 2) DC Current Gain Collector−Emitter Saturation Voltage VCE(sat) Note 2. Pulse Test: Pulse Width  300s, Duty Cycle  2%. Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IC = 50mA, IB = 2.5mA − − 1.0 V IC = 150mA, IB = 15mA − − 1.3 V ON Characteristics (Cont’d) (Note 2) Base−Emitter Saturation Voltage VBE(sat) Small Signal Characteristics Output Capacitance Cob VCB = 10V, f = 140kHz − − 8 pF Input Capacitance Cib VBE = 0.5V, f = 140kHz − − 35 pF Small−Signal Current Gain hfe IC = 20mA, VCE = 20V, f = 100MHz 2.0 − − Turn−On Time ton − − 40 ns Delay Time td VCC = 30V, IC = 300mA, IB1 = 30mA − − 25 ns Rise Time tr − − 35 ns − − 100 ns − − 70 ns − − 50 ns Switching Characteristics Turn−Off Time toff Storage Time ts Fall Time tf VCC = 30V, IC = 300mA, IB1 = IB2 = 30mA Note 2. Pulse Test: Pulse Width  300s, Duty Cycle  2%. .135 (3.45) Min .210 (5.33) Max Seating Plane .500 (12.7) Min .021 (.445) Dia Max E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .205 (5.2) Max .105 (2.67) Max