PN4248

PN4248

  • 厂商:

    NTE

  • 封装:

    TO92-3

  • 描述:

    T-PNP SI- LOW LEVEL AMP

  • 数据手册
  • 价格&库存
PN4248 数据手册
PN4248 and PN4249 Silicon PNP Transistors Audio Amplifier, Switch TO−92 Type Package Absolute Maximum Ratings: (Note 1) Collector−Emitter Voltage (Note 2), VCEO PN4248 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V PN4248 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector−Emitter Voltage, VCES PN4248 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V PN4248 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector−Base Voltage, VCBO PN4248 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V PN4248 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Total Device Dissipation (Note 3), PD TA = 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW TC = 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Note 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. Note 2. Rating refers to a high current point where Collector−Emitter voltage is lowest. Note 3. These ratings give a maximum junction temperature of +150C and Junction−to−Case Thermal Resistance of +125C/W (derating factor of 5.0mW/C); Junction−to−Ambient Thermal Resistance of +200C/W (derating factor of 5.0mW/C) Electrical Characteristics: (TA = +25C, unless otherwise specified) Parameter Collector−Emitter Breakdown Voltage PN4248 Symbol Test Conditions V(BR)CES IC = 10A, IC = 0 PN4249 Collector−Base Breakdown Voltage PN4248 V(BR)CBO IC = 10A, IE = 0 PN4249 Emitter−Base Breakdown Voltage V(BR)EBO IE = 10A, IC = 0 Min Typ Max Unit 40 − − V 60 − − V 40 − − V 60 − − V 5 − − V Emitter Cutoff Current IEBO VEB = −3V, IC = 0 − − 20 nA Collector Cutoff Current ICBO VCB = −40V, IE = 0 − − 10 nA VCB = −40V, IE = 0, TA = +65C − − 3 A Electrical Characteristics Cont’d): (TA = +25C, unless otherwise specified) Parameter DC Current Gain PN4248 Symbol hFE Test Conditions VCE = −5V, IC = 100A PN4249 PN4248 VCE = −5V, IC = 1mA PN4249 DC Pulse Current Gain PN4248 hFE VCE = −5V, IC = 10mA, Note 4 PN4249 Collector−Emitter Sustaining Voltage PN4248 VCEO(sus) IC = 5mA (pulsed), IB = 0, Note 4 PN4249 Min Typ Max Unit 50 − − 100 − 300 50 − − 100 − − 50 − − 100 − − 40 − − V 60 − − V Collector−Emitter Saturation Voltage VCE(sat) IC = 10mA, IB = 0.5mA, Note 4 − − 0.25 V Base−Emitter Saturation Voltage VBE(sat) IC = 10mA, IB = 0.5mA, Note 4 − − 0.9 V Output Capacitance Cob VCB = −5V, IE = 0, f = 1MHz − − 6 pF Input Capacitance Cib VBE = −0.5V, IC = 0, f = 1MHz − − 16 pF High Frequency Current Gain hfe IC = 0.5mA, VCE = 5V, f = 20MHz 2 − − Small−Signal Current Gain PN4248 hfe IC = 1mA, VCE = 5V, f = 1kHz 50 − 1000 100 − 550 PN4249 Input Resistance (PN4249 ONLY) hie IC = 1mA, VCE = 5V, f = 1kHz 2.5 − 17 k Output Conductance (PN4249 ONLY) hoe IC = 1mA, VCE = 5V, f = 1kHz 5 − 40 mhos Voltage Ratio Feedback (PN4249 ONLY) hre IC = 1mA, VCE = 5V, f = 1kHz − − 10 x 10−4 Wide Band Noise Figure (PN4249 ONLY) NF IC = 20A, VCE = 5V, RS = 10k, f = 10Hz to 10kHz, PBW = 15.7kHz − − 3 dB Narrow Band Noise Figure (PN4249 ONLY) NF IC = 20A, VCE = 5V, RS = 10k, f = 1kz, PBW = 150Hz − − 3 dB IC = 250A, VCE = 5V, RS = 10, f = 1kz, PBW = 150Hz − − 3 dB Note 4. Pulse Test: Pulse Width = 300s, Duty Cycle = 2%. .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .205 (5.2) Max .105 (2.67) Max
PN4248 价格&库存

很抱歉,暂时无法提供与“PN4248”相匹配的价格&库存,您可以联系我们找货

免费人工找货