TIP107

TIP107 Silicon PNP Transistor Darlington Power Amp, Switch TO−220 Type Package Description: The TIP107 is a silicon PNP Darlington transistor in a TO−220 type package designed for general purpose amplifier and low−speed switching applications. Features: D High DC Current Gain: hFE = 2500 (Typ) at IC = 4A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 100V (Min) at IC = 30mA D Low Collector−Emitter Saturation Voltage: VCE(sat) = 2V (Max) at IC = 3A Low Collector−Emitter Saturation Voltage: VCE(sat) = 2.5V (Max) at IC = 8A Absolute Maximum Ratings: (Note 1) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80W Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.64W/C Unclamped Inductive Load Energy (Note 2), E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mJ Total Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0W Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.016W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.56C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W Note 1. Stresses exceeding those listed in the Absolute Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damages may occur and reliability may be affected. Note 2. IC = 1.1A, L = 50mH, P.R.F. = 10Hz, VCC = 20V, RBE = 100. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCEO(sus) IC = 30mA, IB = 0, Note 3 100 − − V OFF Characteristics Collector−Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current ICBO VCB = 100V, IE = 0 − − 50 A ICEO VCE = 50V, IB = 0 − − 50 A IEBO VBE = 5V, IC = 0 − − 8 mA hFE VCE = 4V, IC = 3A 1000 − 20,000 VCE = 4V, IC = 8A 200 − − IC = 3A, IB = 6mA − − 2.0 V IC = 8A, IB = 80mA, − − 2.5 V IC = 8A, VCE = 4V − − 2.8 V 4.0 − − − − 300 ON Characteristics (Note 3) DC Current Gain Collector−Emitter Saturation Voltage VCE(sat) Base−Emitter On Voltage VBE(on) Dynamic Characteristics Small−Signal Current Gain hfe IC = 3A, VCE = 4V, f = 1MHz Output Capacitance Cob VCB = 10V, IE = 0, f = 0.1MHz Note 3. Pulse Test: Pulse Width  300s, Duty Cycle  2%. C B .420 (10.67) Max E .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .070 (1.78) Max Base .100 (2.54) .500 (12.7) Min Emitter Collector/Tab pF