TIP116

TIP116 Silicon PNP Transistor Darlington Power Amp, Switch TO−220 Type Package Description: The TIP116 is a silicon PNP Darlington transistor in a TO−220 type package designed for general purpose amplifier and low−speed switching applications. Features: D High DC Current Gain: hFE = 2500 (Typ) at IC = 1A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 80V (Min) at IC = 30mA D Low Collector−Emitter Saturation Voltage: VCE(sat) = 2.5V (Max) at IC = 2A Absolute Maximum Ratings: (Note 1) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4W/C Total Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0W Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.016W/C Unclamped Inductive Load Energy, E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mJ Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W Note 1. Stresses exceeding those listed in the Absolute Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damages may occur and reliability may be affected. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 80 − − V OFF Characteristics Collector−Emitter Sustaining Voltage VCEO(sus) IC = 30mA, IB = 0, Note 3 Collector Cutoff Current Emitter Cutoff Current ICBO VCB = 80V, IE = 0 − − 1.0 mA ICEO VCE = 40V, IB = 0 − − 2.0 mA IEBO VBE = 5V, IC = 0 − − 2 mA hFE VCE = 4V, IC = 1A 1000 − − VCE = 4V, IC = 2A 500 − − ON Characteristics (Note 3) DC Current Gain Collector−Emitter Saturation Voltage VCE(sat) IC = 2A, IB = 8mA − − 2.5 V Base−Emitter On Voltage VBE(on) IC = 2A, VCE = 4V − − 2.8 V Dynamic Characteristics Small−Signal Current Gain hfe IC = 0.75A, VCE = 10V, f = 1MHz 25 − − Output Capacitance Cob VCB = 10V, IE = 0, f = 0.1MHz − − 100 Note 3. Pulse Test: Pulse Width  300s, Duty Cycle  2%. C B .420 (10.67) Max E .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .070 (1.78) Max Base .100 (2.54) .500 (12.7) Min Emitter Collector/Tab pF