TIP142

TIP142 Silicon NPN Transistor Darlington Power Amp, Switch TO−247 Type Package Description: The TIP142 is a silicon NPN Darlington transistor in a TO−247 type package designed for general purpose amplifier and low frequency switching applications. Features: D High DC Current Gain: hFE = 1000 (Min) at IC = 5A, VCE = 4V D Collector−Emitter Sustaining Voltage: VCEO(sus) = 100V (Min) at IC = 30mA Absolute Maximum Ratings: (Note 1) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35.7C/W Note 1. Stresses exceeding those listed in the Absolute Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damages may occur and reliability may be affected. Note 2. 5ms, 10% Duty Cycle Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCEO(sus) IC = 30mA, IB = 0, Note 3 100 − − V OFF Characteristics Collector−Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current ICBO VCB = 100V, IE = 0 − − 1.0 mA ICEO VCE = 50V, IB = 0 − − 2.0 mA IEBO VBE = 5V − − 2 mA Note 3. Pulse Test: Pulse Width = 300s, Duty Cycle  2%. Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCE = 4V, IC = 5A 1000 − − VCE = 4V, IC = 10A 500 − − IC = 5A, IB = 10mA − − 2.0 V IC = 10A, IB = 40mA − − 3.0 V ON Characteristics (Note 3) DC Current Gain hFE Collector−Emitter Saturation Voltage VCE(sat) Base−Emitter Saturation Voltage VBE(sat) IC = 10A, IB = 40mA − − 3.5 V Base−Emitter On Voltage VBE(on) IC = 10A, VCE = 4V − − 3.0 V VCC = 30V, IC = 5A, IB = 20mA, Duty Cycle  2%, IB1 = IB2, RC & RB Varied, TJ = +25C − 0.15 − s − 0.55 − s − 2.5 − s − 2.5 − s Switching Characteristics Delay Time td Rise Time tr Storage Time ts Fall Time tf Note 3. Pulse Test: Pulse Width = 300s, Duty Cycle  2%. .626 (15.9) Max .197 (5.0) .217 (5.5) .787 (20.0) .143 (3.65) Dia Max B C B C E .157 (4.0) .559 (14.2) Min E .215 (5.45) .047 (1.2) .094 (2.4)