TIP3055

TIP3055 Silicon NPN Transistor Power Amp, Switch TO−247 Type Package Description: The TIP3055 is a silicon NPN transistor in a TO−247 type package designed for general purpose switching and amplifier applications. Features: D DC Current Gain: hFE = 20 − 70 at IC = 4A D Collector−Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) at IC = 4A D Excellent Safe Operating Area Absolute Maximum Ratings: (Note 1) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector−Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90W Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.72W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.39C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35.7C/W Note 1. Stresses exceeding Absolute Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the recommended Operation Conditions may affect device reliability. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 60 − − V OFF Characteristics Collector−Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current VCEO(sus) IC = 30mA, IB = 0, Note 2 ICER VCE = 70V, RBE = 100 − − 1.0 mA ICEO VCE = 30V, IB = 0 − − 0.7 mA ICEV VCE = 100V, VBE(off) = 1.5V − − 5.0 mA IEBO VBE = 7V, IC = 0 − − 5 mA Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle  2%. Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCE = 4V, IC = 4A 20 − 70 VCE = 4V, IC = 10A 5 − − IC = 4A, IB = 400mA − − 1.1 V IC = 10A, IB = 3.3A − − 3.0 V IC = 4A, VCE = 4V − − 1.8 V ON Characteristics (Note 2) DC Current Gain hFE Collector−Emitter Saturation Voltage VCE(sat) Base−Emitter On Voltage VBE(on) Second Breakdown Second Breakdown Collector Current with Base Forward Biased Is/b VCE = 30V, t = 1.0s; Non−Repetitive 3.0 − − A Current Gain − Bandwidth Product fT IC = 500mA, VCE = 10V, f = 1MHz 2.5 − − MHz Small−Signal Current Gain hfe VCE = 4V, IC = 1A, f = 1kHz 15 − − kHz Dynamic Characteristics Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle  2%. .626 (15.9) Max .197 (5.0) .217 (5.5) .787 (20.0) .143 (3.65) Dia Max B C E .157 (4.0) .215 (5.45) .559 (14.2) Min .047 (1.2) .094 (2.4)