TIP31E

TIP31E Silicon NPN Transistor General Purpose Amp, Switch TO−220 Type Package Features: D Collector−Emitter Sustaining Voltage: VCE(sus) = 140V Min D Current Gain Bandwidth Product: fT = 3MHz Min @ IC = 1A Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.125C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit V(BR)CEO IC = 30mA, IB = 0, Note 1 140 − − V OFF Characteristics Collector−Emitter Breakdown Voltage Collector Cutoff Current Emitter−Base Cutoff Current ICEO VCE = 90V, IB = 0 − − 0.3 mA ICES VCE = 180V, VBE = 0 − − 0.2 mA IEBO VEB = 5V, IC = 0 − − 1.0 mA hFE VCE = 4V, IC = 1A 25 − − VCE = 4V, IC = 3A 5 − − ON Characteristics (Note 1) DC Current Gain Collector−Emitter Saturation Voltage VCE(sat) IC = 3A, IB = 750mA − − 2.5 V Base−Emitter ON Voltage VBE(on) VCE = 4V, IC = 3A − − 1.8 V Note 1. Pulsed: Pulse Duration  300s, Duty Cycle  2%. Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Current Gain Bandwidth Product fT VCE = 10V, IC = 500mA, f = 1MHz 3 − − MHz Small Signal Current Gain hfe VCE = 10V, IC = 500mA, f = 1kHz 20 − − Turn On Time ton − − 0.6 s Turn Off Time toff IC = 1A, IB1 = −IB2 = 0.1A, VBE(off) = −4.3V, RL = 30 − − 2.8 s Dynamic Characteristics Switching Characteristics Note 1. Pulsed: Pulse Duration  300s, Duty Cycle  2%. Note 2. fT = |hfe| · fTEST .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.54) Emitter Collector/Tab