TIP42A

NTE196 (NPN) & NTE197 (PNP) Silicon Complementary Transistors Audio Power Output and Medium Power Switching Description: The NTE196 (NPN) and NTE197 (PNP) are silicon complementary transistors in a TO220 type package designed for use in general purpose amplifier and switching applications. Features: D DC Current Gain Specified to 7 Amps: hFE = 2.3 Min @ IC = 7A D Collector–Emitter Sustaining Voltage: VCEO(sus) = 70V Min D High Current–Gain Bandwidth Product: fT = 4MHz Min @ IC = 500mA (NTE196) = 10MHz Min @ IC = 500mA (NTE197) Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.125°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0, Note 1 70 – – V Collector Cutoff Current Emitter Cutoff Current ICEO VCE = 60V, IB = 0 – – 1.0 mA ICEX VCE = 80V, VEB(off) = 1.5V – – 100 µA VCE = 80V, VEB(off) = 1.5V, TC = +150°C – – 2.0 mA VBE = 5V, IC = 0 – – 1.0 mA IEBO Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain hFE IC = 2A, VCE = 4V 30 – 150 IC = 7A, VCE = 4V 2.3 – – Collector–Emitter Saturation Voltage VCE(sat) IC = 7A, IB = 3A – – 3.5 V Base–Emitter ON Voltage VBE(on) IC = 7A, VCE = 4V – – 3.0 V IC = 500mA, VCE = 4V, ftest = 1MHz, Note 2 4 – – MHz 10 – – MHz pF Dynamic Characteristics Current–Gain Bandwidth Product NTE196 fT NTE197 Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz – – 250 Small–Signal Current Gain hfe IC = 500mA, VCE = 4V, f = 50kHz 20 – – Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. Note 2. fT = |hfe|  ftest .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.54) Emitter Collector/Tab