TIP42C

TIP42A, TIP42B, TIP42C Silicon PNP Transistors General Purpose Amp, Switch TO−220 Type Package Absolute Maximum Ratings: (TC = +25C, Note 1 unless otherwise specified) Collector−Emitter Voltage, VCEO TIP42A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V TIP42B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V TIP42C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector−Base Voltage, VCBO TIP42A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V TIP42B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V TIP42C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.52W/C Total Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.016W/C Unclamped Inductive Load Energy (Note 2), E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5mJ Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57C/W Note 1. Stresses exceeding Absolute Maximum Ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Note 2. IC = 2.5A, L = 20mH, P.R.F = 10Hz, VCC = 10V, RBE = 100. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCEO(sus) IC = 30mA, IB = 0, Note 3 60 − − V TIP42B 80 − − V TIP42C 100 − − V VCE = 30V, IB = 0 − − 0.7 mA VCE = 60V, IB = 0 − − 0.7 mA VCE = 60V, VEB = 0 − − 400 A TIP42B VCE = 80V, VEB = 0 − − 400 A TIP42C VCE = 100V, VEB = 0 − − 400 A IEBO VBE = 5V, IC = 0 − − 1.0 mA hFE VCE = 4V, IC = 0.3A 30 − − VCE = 4V, IC = 3.0A 15 − 75 OFF Characteristics Collector−Emitter Sustaining Voltage TIP42A Collector Cutoff Current TIP42A ICEO TIP42B, TIP42C Collector Cutoff Current TIP42A Emitter Cutoff Current ICES ON Characteristics (Note 3) DC Current Gain Collector−Emitter Saturation Voltage VCE(sat) IC = 6A, IB = 600mA − − 1.5 V Base−Emitter ON Voltage VBE(on) VCE = 4V, IC = 6A − − 2.0 V MHz Dynamic Characteristics Current−Gain − Bandwidth Product fT VCE = 10V, IC = 0.5A, ftest = 1MHz 3.0 − − Small−Signal Current Gain hfe VCE = 10V, IC = 0.5A, f = 1kHz 20 − − Note 3. Pulse Test: Pulse Width  300s, Duty Cycle  2%. .420 (10.67) Max .660 (16.8) Max .500 (12.7) Min Base .100 (2.54) Emitter Collector/Tab