TIP47

TIP47 Silicon NPN Transistors High Voltage Amp, Switch TO−220 Type Package Features: D Collector−Emitter Sustaining Voltage: 250−400V (Min) D 1A Rated Collector Current D fT = 10Mhz (Min) @ IC = 200mA Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.125C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCEO(sus) IC = 30mA, IB = 0, Note 1 250 − − V OFF Characteristics Collector−Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current ICEO VCE = 150V, IB = 0 − − 1.0 mA ICES VCE = 350V, VEB = 0 − − 1.0 mA IEBO VBE = 5V, IC = 0 − − 1.0 mA hFE VCE = 10V, IC = 0.3A 30 − 150 VCE = 10V, IC = 1.0A 10 − − ON Characteristics (Note 1) DC Current Gain Collector−Emitter Saturation Voltage VCE(sat) IC = 1A, IB = 200mA − − 1.0 V Base−Emitter ON Voltage VBE(on) VCE = 10V, IC = 1A − − 1.5 V MHz Dynamic Characteristics Current−Gain − Bandwidth Product fT VCE = 10V, IC = 0.2A, ftest = 2Mhz, Note 2 10 − − Small−Signal Current Gain hfe VCE = 10V, IC = 0.2A, f = 1kHz 25 − − Note 1. Pulse Test: Pulse Width  300s, Duty Cycle  2%. Note 2. FT = |hfe|  ftest. .420 (10.67) Max .660 (16.8) Max .500 (12.7) Min Base .100 (2.54) Emitter Collector/Tab