28F320W30

Numonyx™ Wireless Flash Memory (W30) 28F640W30, 28F320W30, 28F128W30 Datasheet Product Features High Performance Read-While-Write/Erase — Burst Frequency at 40 MHz — 70 ns Initial Access Speed — 25 ns Page-Mode Read Speed — 20 ns Burst-Mode Read Speed — Burst-Mode and Page-Mode in All Blocks and across All Partition Boundaries — Burst Suspend Feature — Enhanced Factory Programming: 3.5 µs per Word Program Time — Programmable WAIT Signal Polarity Flash Power — VCC = 1.70 V – 1.90 V — VCCQ = 2.20 V – 3.30 V — Standby Current (130 nm) = 8 µA (typ.) — Read Current = 7 mA (4 word burst, typical) Flash Software — 5 µs/9 µs (typ.) Program/Erase Suspend Latency Time — Numonyx™ Flash Data Integrator (FDI) and Common Flash Interface (CFI) Compatible Quality and Reliability — Operating Temperature: –40 °C to +85 °C — 100K Minimum Erase Cycles — 130 nm ETOX™ VIII Process — 180 nm ETOX™ VII Process Flash Architecture — Multiple 4-Mbit Partitions — Dual Operation: RWW or RWE — Parameter Block Size = 4-Kword — Main block size = 32-Kword — Top or Bottom Parameter Blocks Flash Security — 128-bit Protection Register: 64 Unique Device Identifier Bits; 64 User OTP Protection Register Bits — Absolute Write Protection with VPP at Ground — Program and Erase Lockout during Power Transitions — Individual and Instantaneous Block Locking/Unlocking with Lock-Down Density and Packaging — 130 nm: 32Mb, 64Mb, and 128Mb in VF BGA Package; 64Mb, 128Mb in QUAD+ Package — 180 nm: 32Mb and 128Mb Densities in VF BGA Package; 64Mb Density in µBGA* Package — 56 Active Ball Matrix, 0.75 mm Ball-Pitch — 16-bit Data Bus Order Number: 290702-13 November 2007 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH NUMONYX™ PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN NUMONYX'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, NUMONYX ASSUMES NO LIABILITY WHATSOEVER, AND NUMONYX DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO SALE AND/OR USE OF NUMONYX PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. Numonyx products are not intended for use in medical, life saving, life sustaining, critical control or safety systems, or in nuclear facility applications. Legal L ines and D isc laim er s Numonyx B.V. may make changes to specifications and product descriptions at any time, without notice. Numonyx B.V. may have patents or pending patent applications, trademarks, copyrights, or other intellectual property rights that relate to the presented subject matter. The furnishing of documents and other materials and information does not provide any license, express or implied, by estoppel or otherwise, to any such patents, trademarks, copyrights, or other intellectual property rights. Designers must not rely on the absence or characteristics of any features or instructions marked “reserved” or “undefined.” Numonyx reserves these for future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them. Contact your local Numonyx sales office or your distributor to obtain the latest specifications and before placing your product order. Copies of documents which have an order number and are referenced in this document, or other Numonyx literature may be obtained by visiting Numonyx's website at http://www.numonyx.com. Numonyx, the Numonyx logo, and StrataFlash are trademarks or registered trademarks of Numonyx B.V. or its subsidiaries in other countries. *Other names and brands may be claimed as the property of others. Copyright © 2007, Numonyx B.V., All Rights Reserved. Datasheet 2 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) Contents 1.0 Introduction .............................................................................................................. 7 1.1 Document Purpose .............................................................................................. 7 1.2 Nomenclature ..................................................................................................... 7 1.3 Conventions ....................................................................................................... 8 Functional Overview .................................................................................................. 9 2.1 Overview ........................................................................................................... 9 2.2 Memory Map and Partitioning .............................................................................. 10 Package Information ............................................................................................... 13 3.1 W30 Flash Memory Device – 130 nm Lithography .................................................. 13 3.2 W30 Flash Memory Device – 180 nm Lithography .................................................. 15 Ballout and Signal Descriptions ............................................................................... 18 4.1 Signal Ballout ................................................................................................... 18 4.2 Signal Descriptions ............................................................................................ 20 Maximum Ratings and Operating Conditions ............................................................ 24 5.1 Absolute Maximum Ratings................................................................................. 24 5.2 Operating Conditions ......................................................................................... 24 Electrical Specifications ........................................................................................... 26 6.1 DC Current Characteristics.................................................................................. 26 6.2 DC Voltage Characteristics.................................................................................. 27 AC Characteristics ................................................................................................... 28 7.1 Read Operations - 130 nm Lithography ................................................................ 28 7.2 Read Operations - 180 nm Lithography ................................................................ 29 7.3 AC Write Characteristics ..................................................................................... 38 7.4 Erase and Program Times................................................................................... 43 Power and Reset Specifications ............................................................................... 44 8.1 Active Power..................................................................................................... 44 8.2 Automatic Power Savings (APS) .......................................................................... 44 8.3 Standby Power.................................................................................................. 44 8.4 Power-Up/Down Characteristics........................................................................... 44 8.4.1 System Reset and RST#.......................................................................... 45 8.4.2 VCC, VPP, and RST# Transitions............................................................... 45 8.5 Power Supply Decoupling ................................................................................... 45 8.6 Reset Specifications........................................................................................... 46 8.7 AC I/O Test Conditions....................................................................................... 46 8.8 Flash Device Capacitance ................................................................................... 47 Flash Device Operations .......................................................................................... 48 9.1 Bus Operations ................................................................................................. 48 9.1.1 Read .................................................................................................... 48 9.1.2 Burst Suspend ....................................................................................... 49 9.1.3 Standby ................................................................................................ 49 9.1.4 Reset.................................................................................................... 50 9.1.5 Write .................................................................................................... 50 9.2 Flash Device Commands..................................................................................... 50 9.3 Command Sequencing ....................................................................................... 53 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 Read Operations ...................................................................................................... 55 10.1 Read Array ....................................................................................................... 55 November 2007 Order Number: 290702-13 Datasheet 3 Numonyx™ Wireless Flash Memory (W30) 10.2 10.3 10.4 10.5 Read Device ID .................................................................................................55 Read Query (CFI) ..............................................................................................56 Read Status Register..........................................................................................56 Clear Status Register .........................................................................................58 11.0 Program Operations .................................................................................................59 11.1 Word Program ...................................................................................................59 11.2 Factory Programming .........................................................................................60 11.3 Enhanced Factory Program (EFP) .........................................................................61 11.3.1 EFP Requirements and Considerations .......................................................61 11.3.2 Setup....................................................................................................62 11.3.3 Program ................................................................................................62 11.3.4 Verify....................................................................................................62 11.3.5 Exit.......................................................................................................63 12.0 Program and Erase Operations .................................................................................65 12.1 Program/Erase Suspend and Resume ...................................................................65 12.2 Block Erase .......................................................................................................67 12.3 Read-While-Write and Read-While-Erase ...............................................................69 13.0 Security Modes ........................................................................................................71 13.1 Block Lock Operations ........................................................................................71 13.1.1 Lock......................................................................................................72 13.1.2 Unlock...................................................................................................72 13.1.3 Lock-Down ............................................................................................72 13.1.4 Block Lock Status ...................................................................................73 13.1.5 Lock During Erase Suspend ......................................................................73 13.1.6 Status Register Error Checking .................................................................74 13.1.7 WP# Lock-Down Control ..........................................................................74 13.2 Protection Register.............................................................................................75 13.2.1 Reading the Protection Register ................................................................76 13.2.2 Programing the Protection Register ...........................................................76 13.2.3 Locking the Protection Register.................................................................76 13.3 VPP Protection...................................................................................................78 14.0 Set Read Configuration Register ..............................................................................79 14.1 Read Mode (RCR[15]) ........................................................................................80 14.2 First Access Latency Count (RCR[13:11]) ..............................................................80 14.2.1 Latency Count Settings............................................................................81 14.3 WAIT Signal Polarity (RCR[10]) ...........................................................................81 14.4 WAIT Signal Function .........................................................................................82 14.5 Data Hold (RCR[9])............................................................................................82 14.6 WAIT Delay (RCR[8]) .........................................................................................83 14.7 Burst Sequence (RCR[7])....................................................................................83 14.8 Clock Edge (RCR[6]) ..........................................................................................85 14.9 Burst Wrap (RCR[3]) ..........................................................................................85 14.10 Burst Length (RCR[2:0]).....................................................................................85 A B C Write State Machine .................................................................................................86 Common Flash Interface ..........................................................................................89 Ordering Information ...............................................................................................99 Datasheet 4 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) Revision History Date of Revision 09/19/00 Version -001 Initial release 28F3208W30 product references removed (product was discontinued) 28F640W30 product added Revised Table 2, Signal Descriptions (DQ15–0, ADV#, WAIT, S-UB#, S-LB#, VCCQ) Revised Section 3.1, Bus Operations Revised Table 5, Command Bus Definitions, Notes 1 and 2 Revised Section 4.2.2, First Latency Count (LC2–0); revised Figure 6, Data Output with LC Setting at Code 3 ; added Figure 7, First Access Latency Configuration Revised Section 4.2.3, WAIT Signal Polarity (WT) Added Section 4.2.4, WAIT Signal Function Revised Section 4.2.5, Data Output Configuration (DOC) Added Figure 8, Data Output Configuration with WAIT Signal Delay Revised Table 13, Status Register DWS and PWS Description Revised entire Section 5.0, Program and Erase Voltages Revised entire Section 5.3, Enhanced Factory Programming (EFP) Revised entire Section 8.0, Flash Security Modes Revised entire Section 9.0, Flash Protection Register; added Table 15, Simultaneous Operations Allowed with the Protection Register Revised Section 10.1, Power-Up/Down Characteristics Revised Section 11.3, DC Characteristics. Changed ICCS,ICCWS, ICCES Specs from 18 µA to 21µA; changed ICCR Spec from 12 mA to 15 mA (burst length = 4) Added Figure 20, WAIT Signal in Synchronous Non-Read Array Operation Waveform Added Figure 21, WAIT Signal in Asynchronous Page-Mode Read Operation Waveform Added Figure 22, WAIT Signal in Asynchronous Single-Word Read Operation Waveform Revised Figure 23, Write Waveform Revised Section 12.4, Reset Operations Clarified Section 13.2, SRAM Write Operation, Note 2 Revised Section 14.0, Ordering Information Minor text edits Deleted SRAM Section Added 128M DC and AC Specifications Added Burst Suspend Added Read While Write Transition Waveforms Various text edits Revised Device ID Revised Write Speed Bin Various text edits Added Latency Count Tables Updated Packing Ball-Out and Dimension Various text edits Minor text clarifications Revised Table 20, DC Current Characteristics, ICCS Revised Table 20, DC Current Characteristics, ICCAPS Removed Numonyx Burst order Minor text edits Updated Package Drawing and Dimensions Revised Table 22, Read Operations, tAPA Added note to table 15, Configuration Register Descriptions Added note to section 3.1.1, Read Description 03/14/01 -002 04/05/02 -003 04/24/02 -004 10/20/02 -005 01/14/03 -006 03/22/03 -007 November 2007 Order Number: 290702-13 Datasheet 5 Numonyx™ Wireless Flash Memory (W30) Date of Revision Version Description Updated Block Lock Operations (Sect. 7.1 and Fig. 11) Updated improved AC timings Added QUAD+ package option, and Appendix D Minor text edits including new product-naming conventions Corrected Absolute Maximum Rating for VCCQ (Sect. 10.1, Table 18) Minor text edits Restructured the datasheet according to new layout. Timing Diagram Nomenclature Synergy with other product families Added Ordering information Minor Text Edits Updated ordering information Applied Numonyx branding. 11/17/03 -008 05/06/04 05/17/04 06/2005 08/2007 November 2007 -009 -010 -011 -012 13 Datasheet 6 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) 1.0 Introduction The Numonyx™ Wireless Flash Memory (W30) device combines state-of-the-art Numonyx™ Flash technology to provide a versatile memory solution for high performance, low power, board constraint memory applications. The W30 flash memory device offers a multi-partition, dual-operation flash architecture that enables the flash device to read from one partition while programming or erasing in another partition. This Read-While-Write or Read-While-Erase capability makes it possible to achieve higher data throughput rates compared to single partition devices. Two processors can interleave code execution, because program and erase operations can now occur as background processes. The W30 flash memory device incorporates an Enhanced Factory Programming (EFP) mode to improve 12 V factory programming performance. This feature helps eliminate manufacturing bottlenecks associated with programming high-density flash memory devices. The EFP program time is 3.5 µs per word, compared to the standard factory program time of 8.0 µs per word, so EFP mode saves significant factory programming time for improved factory efficiency. The W30 flash memory device also includes block lock-down and programmable WAIT signal polarity, and is supported by an array of software tools. 1.1 Document Purpose This datasheet contains information about the Product Name device family. Throughout this document, this device family is referred to as the W30 flash memory device. • This chapter provides a flash memory overview. • Chapter 2.0 through Chapter 8.0 describe the memory functionality. • Chapter 6.0 describes the electrical specifications for extended temperature product offerings. • Appendix A describes the Write State Machine (WSM), • Appendix B describes the Numonyx™ Common Flash Interface (CFI) as it applies to the W30 flash memory device. • Appendix C provides ordering information for the Product Name device family. 1.2 Nomenclature Acronyms that describe product features or usage are defined here: • APS - Automatic Power Savings • BBA - Block Base Address • CFI - Common Flash Interface • CUI - Command User Interface • DU - Do not Use • EFP - Enhanced Factory Programming • FDI - Flash Data Integrator • NC - No Connect • OTP - One-Time Programmable • PBA - Partition Base Address • RCR - Read Configuration Register November 2007 Order Number: 290702-13 Datasheet 7 Numonyx™ Numonyx™ Wireless Flash Memory (W30) • RWE - Read-While-Erase • RWW - Read-While-Write • SCSP - Stacked Chip Scale Package • SRD - Status Register Data • VF BGA - Very-thin, Fine-pitch, Ball Grid Array • WSM - Write State Machine 1.3 Conventions The following abbreviated terms and phrases are used throughout this document: • 1.8 V refers to the VCC operating voltage range of 1.7 V – 1.9 V (except where noted). • 3.0 V refers to the VCCQ operating voltage range of 2.2 V - 3.3 V. • VPP = 12 V refers to 12 V ± 5%. • When referring to registers, the term set means the bit is a logical 1, and cleared means the bit is a logical 0. • The terms pin and signal are often used interchangeably to refer to the external signal connections on the package. (Ball is the term used for BGA). • A word is 2 bytes, or 16 bits. • Signal names are in all CAPS (for example, WAIT). • Voltage applied to the signal is subscripted (for example, VPP). Throughout this document, references are made to top, bottom, parameter, and partition. To clarify these references, the following conventions have been adopted: • A block is a group of bits (or words) that erase simultaneously with one block erase instruction. • A main block contains 32 Kwords. • A parameter block contains 4 Kwords. • The Block Base Address (BBA) is the first address of a block. • A partition is a group of blocks that share erase and program circuitry and a common status register. • The Partition Base Address (PBA) is the first address of a partition. For example, on a 32-Mbit top-parameter flash device, partition number 5 has a PBA of 0x140000. • The top partition is located at the highest physical flash device address. This partition can be a main partition or a parameter partition. • The bottom partition is located at the lowest physical flash device address. This partition can be a main partition or a parameter partition. • A main partition contains only main blocks. • A parameter partition contains a mixture of main blocks and parameter blocks. • A top parameter device (TPD ) has the parameter partition at the top of the memory map with the parameter blocks at the top of that partition. This flash device type was formerly referred to as a top-boot flash device. • A bottom parameter device (BPD) has the parameter partition at the bottom of the memory map with the parameter blocks at the bottom of that partition. This flash device type was formerly referred to as a bottom-boot block flash device. Datasheet 8 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) 2.0 Functional Overview This section provides an overview of the W30 flash memory device features and architecture. 2.1 Overview The W30 flash memory device provides Read-While-Write (RWW) and Read-WhiteErase (RWE) capability. This capability provides high-performance synchronous and asynchronous reads in package-compatible densities using a 16-bit data bus. Individually-erasable memory blocks are optimally sized for code and data storage. Eight 4-Kword parameter blocks are located in the parameter partition at either the top or bottom of the memory map. The rest of the memory array is grouped into 32-Kword main blocks. The memory architecture for the W30 flash memory device consists of multiple 4-Mbit partitions, the exact number depending on the flash device density. By dividing the memory array into partitions, program or erase operations can take place simultaneously during read operations. Burst reads can traverse partition boundaries, but user application code is responsible for ensuring that burst reads do not extend into a partition that is actively programming or erasing. Although each partition has burstread, write, and erase capabilities, simultaneous operation is limited to write or erase in one partition while other partitions are in a read mode. Augmented erase-suspend functionality further enhances the RWW capabilities of the W30 flash memory device. An erase can be suspended to perform a program or read operation within any block, except a block that is erase-suspended. A program operation nested within a suspended erase can subsequently be suspended to read yet another memory location. After power-up or reset, the W30 flash memory device defaults to asynchronous read configuration. Writing to the flash memory device Read Configuration Register (RCR) enables synchronous burst-mode read operation. In synchronous mode, the CLK input increments an internal burst address generator. CLK also synchronizes the flash memory device with the host CPU and outputs data on every, or on every other, valid CLK cycle after an initial latency. A programmable WAIT output signals to the CPU when data from the flash memory device is ready. In addition to its improved architecture and interface, the W30 flash memory device incorporates Enhanced Factory Programming (EFP), a feature that enables fast programming and low-power designs. The EFP feature provides fast program performance, which can increase the manufacturing throughput of a factory. The W30 flash memory device supports read operations at 1.8 V and erase and program operations at 1.8 V or 12 V. With the 1.8-V option, VCC and VPP can be tied together for an ultra-low-power design. In addition to voltage flexibility, the dedicated VPP input provides extensive data protection when VPP < VPPLK. A 128-bit protection register can implement new security techniques and data protection schemes: • A combination of factory-programmed and user-OTP data cells provide unique flash device identification, help implement fraud or cloning prevention schemes, or help protect content. • Zero-latency locking/unlocking on any memory block provides instant and complete protection for critical system code and data. • An additional block lock-down capability provides hardware protection where software commands alone cannot change the block protection status. November 2007 Order Number: 290702-13 Datasheet 9 Numonyx™ Numonyx™ Wireless Flash Memory (W30) The flash device Command User Interface (CUI) links the system processor to the internal flash memory operation. A valid command sequence written to the CUI initiates the flash device Write State Machine (WSM) operation, which automatically executes the algorithms, timings, and verifications necessary to manage flash memory program and erase. An internal status register provides ready/busy indication results of the operation (success, fail, and so on). Three power-saving features– Automatic Power Savings (APS), standby, and RST#– can significantly reduce power consumption. • The flash device automatically enters APS mode following read cycle completion. • Standby mode begins when the system deselects the flash memory by de-asserting CE#. • Driving RST# low produces power savings similar to standby mode. It also resets the part to read-array mode (important for system-level reset), clears internal status registers, and provides an additional level of flash device write protection. 2.2 Memory Map and Partitioning The W30 flash memory device is divided into 4-Mbit physical partitions. This partitioning allows simultaneous RWW or RWE operations, and enables users to segment code and data areas on 4-Mbit boundaries. The flash memory array is asymmetrically blocked, which enables system code and data integration within a single flash device. Each block can be erased independently in block erase mode. Simultaneous program and erase operations are not allowed; only one partition at a time can be actively programming or erasing. See Table 1, “Bottom Parameter Memory Map” on page 11 and Table 2, “Top Parameter Memory Map” on page 11. • The 32-Mbit flash device has eight partitions. • The 64-Mbit flash device has 16 partitions. • The 128-Mbit flash device has 32 partitions. Each flash device density contains one parameter partition and several main partitions. The 4-Mbit parameter partition contains eight 4-Kword parameter blocks and seven 32Kword main blocks. Each 4-Mbit main partition contains eight 32-Kword blocks. The bulk of the flash memory array is divided into main blocks that can store code or data, and parameter blocks that allow storage of frequently updated small parameters that are normally stored in EEPROM. By using software techniques, the word-rewrite functionality of EEPROMs can be emulated. . Datasheet 10 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) . Table 1: Bottom Parameter Memory Map Size (KW) Blk # 32 Mbit Blk # 64 Mbit Blk # 262 .. . 128 Mbit 7F8000-7FFFFF .. . 400000-407FFF 3F8000-3FFFFF .. . 200000-207FFF 1F8000-1FFFFF .. . 100000-107FFF 0F8000-0FFFFF .. . 0C0000-0C7FFF 0B8000-0BFFFF .. . 080000-087FFF 078000-07FFFF .. . 040000-047FFF 038000-03FFFF .. . 008000-00FFFF 007000-007FFF .. . 000000-000FFF 128 Mbit 7FF000-7FFFFF .. . 7F8000-7F8FFF 7F0000-7F7FFF .. . 7C0000-7C7FFF Datasheet 11 Sixteen Partitions 32 .. . 32 135 Eight Partitions 32 .. . 134 .. . 3F8000-3FFFFF .. . 134 .. . 71 70 .. . 39 38 .. . 31 30 .. . 23 22 .. . 15 14 .. . 8 7 .. . 0 Blk # 262 .. . 255 254 .. . 248 32 71 200000-207FFF Four Partitions 32 .. . 70 .. . 1F8000-1FFFFF .. . 70 .. . 1F8000-1FFFFF .. . 100000-107FFF 0F8000-0FFFFF .. . 0C0000-0C7FFF 0B8000-0BFFFF .. . 080000-087FFF 078000-07FFFF .. . 040000-047FFF 038000-03FFFF .. . 008000-00FFFF 007000-007FFF .. . 000000-000FFF 64 Mbit 3FF000-3FFFFF .. . 3F8000-3F8FFF 3F0000-3F7FFF .. . 3C0000-3C7FFF Main Partitions 32 39 100000-107FFF 39 One Partition 32 .. . 38 .. . 0F8000-0FFFFF .. . 38 .. . 31 30 .. . 23 22 .. . 15 14 .. . 8 7 .. . 0 Blk # 134 .. . 127 126 .. . 120 32 31 0C0000-0C7FFF One Partition 32 .. . 30 .. . 0B8000-0BFFFF .. . 080000-087FFF 078000-07FFFF .. . 040000-047FFF 038000-03FFFF .. . 008000-00FFFF 007000-007FFF .. . 000000-000FFF 32 Mbit 1FF000-1FFFFF .. . 1F8000-1F8FFF 1F0000-1F7FFF .. . 1C0000-1C7FFF 32 23 One Partition 32 .. . 22 .. . 15 14 .. . 8 7 .. . 0 Blk # 70 .. . 63 62 .. . 56 32 32 Parameter One Partition Table 2: Size (KW) 4 Parameter Partition .. . One Partition 4 32 .. . 32 November 2007 Order Number: 290702-13 .. . 4 .. . 32 4 Top Parameter Memory Map Numonyx™ Numonyx™ Wireless Flash Memory (W30) Table 2: Top Parameter Memory Map Size (KW) Blk # 55 .. . 32 Mbit 1B8000-1BFFFF .. . Blk # 119 .. . 64 Mbit 3B8000-3BFFFF .. . Blk # 247 .. . 128 Mbit 7B8000-7BFFFF .. . 780000-787FFF 778000-77FFFF .. . 740000-747FFF 738000-73FFFF .. . 700000-707FFF 6F8000-6FFFFF .. . 600000-607FFF 5F8000-5FFFFF .. . 400000-407FFF 3F8000-3FFFFF .. . 000000-007FFF One Partition 32 .. . 32 48 18000-187FFF 112 380000-387FFF 240 One Partition 32 .. . 47 .. . 178000-17FFFF .. . 111 .. . 378000-37FFFF .. . 239 .. . 232 231 .. . 224 223 .. . 192 191 .. . 128 127 .. . 0 32 40 140000-147FFF 104 340000-347FFF One Partition 32 .. . 39 .. . 138000-13FFFF .. . 103 .. . 338000-33FFFF .. . 300000-307FFF 2F8000-2FFFFF .. . 200000-207FFF 1F8000-1FFFFF .. . 000000-007FFF Main Partitions 32 32 100000-107FFF 96 Four Partitions 32 .. . 31 .. . 0F8000-0FFFFF .. . 95 .. . 64 63 .. . 0 32 0 000000-007FFF Eight Partitions 32 .. . 32 32 .. . 32 Datasheet 12 Sixteen Partitions November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) 3.0 3.1 Figure 1: Package Information W30 Flash Memory Device – 130 nm Lithography 32 Mb, 64 Mb, and 128 Mb VF BGA Package Drawing Ball A1 Corner D S1 Ball A1 Corner 1 A B C E D E F G 2 3 4 5 6 7 8 A B C D E F G 8 7 6 5 4 3 2 1 S2 e b Top View - Bump Side Down A1 A2 A Bottom View - Ball Side U p Seating Plane Y Table 3: 2 Mb, 64 Mb, and 128 Mb VF BGA Package Specifications Millimeters Dimension Symbol Min Nom 0.665 0.375 7.700 11.000 9.000 0.750 56 1.225 2.2875 2.250 Max 1.000 0.425 7.800 11.10 0 9.100 0.100 1.325 2.975 2.350 Min 0.0059 0.0128 0.2992 0.4291 0.3504 0.0443 0.1093 0.0846 Nom 0.0262 0.0148 0.3031 0.4331 0.3543 0.0295 56 0.0482 0.1132 0.0886 Max 0.0394 0.0167 0.3071 0.4370 0.3583 0.0039 0.0522 0.1171 0.0925 A A1 A2 b D D E [e] N Y S1 S1 S2 0.150 0.325 7.600 10.900 8.900 1.125 2.775 2.150 Inches Package Height Ball Height Package Body Thickness Ball (Lead) Width Package Body Width (32 Mb, 64 Mb) Package Body Width (128 Mb) Package Body Length (32 Mb, 64 Mb, 128 Mb) Pitch Ball (Lead) Count Seating Plane Coplanarity Corner to Ball A1 Distance Along D (32 Mb, 64 Mb) Corner to Ball A1 Distance Along D (128 Mb) Corner to Ball A1 Distance Along E (32 Mb, 64 Mb,128 Mb) November 2007 Order Number: 290702-13 Datasheet 13 Numonyx™ Numonyx™ Wireless Flash Memory (W30) Figure 2: 32Mb, 64Mb and 128Mb QUAD+ Package Drawing A1 Index Mark 1 2 3 4 5 6 7 8 A B C D E D F G H J K L M b E e 8 7 6 5 4 3 2 1 S2 A B C D E F G H J K L M S1 Top View - Ball Down A2 A1 Bottom View - Ball Up A Y Drawing not to scale. Dimensions Package Height Ball Height Package Body Thickness Ball (Lead) Width Package Body Length Package Body Width Pitch Ball (Lead) Count Seating Plane Coplanarity Corner to Ball A1 Distance Along E Corner to Ball A1 Distance Along D Symbol A A1 A2 b D E e N Y S1 S2 Min 0.200 0.325 9.900 7.900 Millimeters Nom Max 1.200 0.860 0.375 10.000 8.000 0.800 88 1.200 0.600 Notes Min 0.0079 Inches Nom Max 0.0472 0.425 10.100 8.100 0.0128 0.3898 0.3110 0.0339 0.0148 0.3937 0.3150 0.0315 88 0.0472 0.0236 0.0167 0.3976 0.3189 1.100 0.500 0.100 1.300 0.700 0.0433 0.0197 0.0039 0.0512 0.0276 Datasheet 14 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) 3.2 Figure 3: W30 Flash Memory Device – 180 nm Lithography 64Mb ∝ΒΓΑ∗ ΧΣΠ Παχκαγε Δραωινγ ανδ Διμενσιονσ D s Pin # 1 Corner Pin # 1 Indicator 1 1 A B C D E F G 2 3 4 5 6 7 8 A B s2 8 7 6 5 4 3 2 1 E C D E F G b e Top View - Silicon backside Com p lete Ink M ark Not A1 A2 Bottom View - Bump side Up A Seati Plan Y S ide M illimeters M in 0 .850 0 .150 0 .612 0 .300 7 .600 8 .900 P ackage Height B all Height P ackage Body Thickness B all (Lead) Width P ackage Body Width P ackage Body Length P itch B all (Lead) Count S eating Plane Coplanarity C orner to Ball A1 Distance Along D C orner to Ball A1 Distance Along E S ymbol A A1 A2 b D E [ e] N Y S1 S2 N om M ax 1 .000 0 .812 0 .400 7 .800 9 .100 N otes 0 .712 0 .350 7 .700 9 .000 0 .750 56 1 .225 2 .250 Inches M in 0 .0335 0 .0059 0 .0241 0 .0118 0 .2992 0 .3503 N om M ax 0 .0394 0 .0320 0 .0157 0 .3071 0 .3583 0 .0280 0 .0138 0 .3031 0 .3543 0 .0295 56 0 .0482 0 .0886 1 .125 2 .150 0 .100 1 .325 2 .350 0 .0443 0 .0846 0 .0039 0 .0522 0 .0925 November 2007 Order Number: 290702-13 Datasheet 15 Numonyx™ Numonyx™ Wireless Flash Memory (W30) Figure 4: 32Mb VF BGA Package Drawing Ball A1 Corner D S1 Ball A1 Corner 1 A B C E D E F G 2 3 4 5 6 7 8 A B C D E F G 8 7 6 5 4 3 2 1 S2 e b Top View - Bump Side Down A1 A2 A Seating Plane Side View Note: Drawing not to scale Bottom View - Ball Side Up Y Figure 5: 128Mb VF BGA Package Drawing Ball A1 Corner D S1 Ball A1 Corner 1 A B C E D E F G H J 2 3 4 5 6 7 8 9 10 A B C D E F G H J 10 9 8 7 6 5 4 3 21 S2 e b Bottom View - Ball Side Up Top View - Bump Side Down A1 A2 A Seating Plane Side View Note: Drawing not to scal e Y Datasheet 16 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) Table 4: 32Mb and 128Mb VF BGA Package Dimensions Millimeters Dimension Symbol Min Nom 0.665 0.375 7.700 9.000 12.500 12.000 0.750 56 60 1.225 2.250 2.875 3.000 Max 1.000 0.715 0.425 7.800 9.100 12.600 12.100 0.100 1.325 2.350 2.975 3.1000 Min 0.0335 0.0059 0.0242 0.0128 0.2992 0.3503 0.4882 0.4685 0.0443 0.0846 0.1093 0.1142 Nom 0.0262 0.0148 0.3031 0.3543 0.4921 0.4724 0.0295 56 60 0.0482 0.0886 0.1132 0.1181 Max 0.0394 0.0281 0.0167 0.3071 0.3583 0.4961 0.4764 0.0039 0.0522 0.0925 0.1171 0.1220 A A1 A2 b D E D E [e] N N Y S1 S2 S1 S2 0.850 0.150 0.615 0.325 7.600 8.900 12.400 11.900 1.125 2.150 2.775 2.900 Inches Package Height Ball Height Package Body Thickness Ball (Lead) Width Package Body Width 32Mb Package Body Length32Mb Package Body Width 128Mb Package Body Length 128Mb Pitch Ball (Lead) Count 32Mb Ball (Lead) Count 128Mb Seating Plane Coplanarity Corner to Ball A1 Distance Along D 32Mb Corner to Ball A1 Distance Along E 32Mb Corner to Ball A1 Distance Along D 128Mb Corner to Ball A1 Distance Along E 128Mb November 2007 Order Number: 290702-13 Datasheet 17 Numonyx™ Numonyx™ Wireless Flash Memory (W30) 4.0 4.1 Ballout and Signal Descriptions Signal Ballout The W30 flash memory device is available in the 56-ball VF BGA and µBGA Chip Scale Package with 0.75 mm ball pitch, or the QUAD+ SCSP package. Figure 6 shows the VF BGA and µBGA package ballout. Figure 7 shows the QUAD+ package ballout. Figure 6: 1 56-Ball VF BGA/ µBGA Ballout 2 3 4 5 6 7 8 8 7 6 5 4 3 2 1 A A11 B A12 C A13 D A15 E VCCQ F VSS G DQ7 VSSQ DQ5 VCC DQ3 VCCQ DQ8 VSSQ VSSQ DQ8 VCCQ DQ3 VCC DQ5 VSSQ DQ7 DQ14 DQ13 DQ11 DQ10 DQ9 DQ0 OE# OE# DQ0 DQ9 DQ10 DQ11 DQ13 DQ14 VSS DQ15 DQ6 DQ4 DQ2 DQ1 CE# A0 A0 CE# DQ1 DQ2 DQ4 DQ6 DQ15 VCCQ A14 WAIT A16 DQ12 WP# A22 A1 A1 A22 WP# DQ12 A16 WAIT A14 A15 A10 A21 ADV# WE# A19 A7 A2 A2 A7 A19 WE# ADV# A21 A10 A13 A9 A20 CLK RST# A17 A5 A3 A3 A5 A17 RST# CLK A20 A9 A12 A8 VSS VCC VPP A18 A6 A4 A4 A6 A18 VPP VCC VSS A8 A11 A B C D E F G Top View - Ball Side Down Complete Ink Mark Not Shown Bottom View - Ball Side Up Notes: 1. On lower density flash memory devices, the upper address balls can be treated as NC. (that is, on 32-Mbit density, A22 and A21 are NC). 2. See Appendix C, “Ordering Information” on page 99 f or mechanical specifications for the package. Datasheet 18 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) Figure 7: 88-Ball (80 Active Balls) QUAD+ Ballout 1 2 3 4 5 6 7 8 A B DU DU DU DU A4 A18 A19 VSS F1-VCC F2-VCC A21 A11 C A5 R-LB# A23 VSS S-CS2 CLK A22 A12 D A3 A17 A24 F-VPP, F-VPEN R-WE# P1-CS# A9 A13 E A2 A7 A25 F-WP# ADV# A20 A10 A15 F A1 A6 R-UB# F-RST# F-WE# A8 A14 A16 G A0 D8 D2 D10 D5 D13 WAIT F2-CE# H R-OE# D0 D1 D3 D12 D14 D7 F2-OE# J S-CS1# F1-OE# D9 D11 D4 D6 D15 VCCQ K F1-CE# P2-CS# F3-CE# S-VCC P-VCC F2-VCC VCCQ P-Mode, P-CRE L VSS VSS DU VCCQ F1-VCC VSS VSS VSS DU VSS DU M DU Top View - Ball Side Down Legend: Global SRAM/PSRAM specific Flash specific Notes: 1. On lower density flash memory devices, the upper address balls can be treated as NC (that is, on 64-Mb density, A[25:23]are NC) 2. See Appendix C, “Ordering Information” on page 99 for mechanical specifications for the package. November 2007 Order Number: 290702-13 Datasheet 19 Numonyx™ Numonyx™ Wireless Flash Memory (W30) 4.2 Signal Descriptions • Table 5 describes the signals for the 56-ball VF BGA and µBGA Chip Scale Package. • Table 6 describes the signals for the QUAD+ package ballout. Table 5: Symbol A[22:0] Signal Descriptions - µBGA Package & VF BGA Package Type Input Name and Function ADDRESS INPUTS: For memory addresses. 32 Mbit: A[20:0]; 64 Mbit: A[21:0]; 128 Mbit: A[22:0] DATA INPUTS/OUTPUTS: • Inputs data and commands during write cycles. • Outputs data during reads. Data pins are High-Z when the flash device or its outputs are deselected. Data is internally latched during writes. ADDRESS VALID: ADV# indicates valid address presence on address inputs. During synchronous read operations, all addresses are latched on the rising edge of ADV#, or the next valid CLK edge with ADV# low, whichever occurs first. CHIP ENABLE: • Asserting CE# activates internal control logic, I/O buffers, decoders, and sense amps. • De-asserting CE# deselects the flash device, places it in standby mode, and tri-states all outputs. CLOCK: CLK synchronizes the flash device to the system bus frequency during synchronous reads and increments an internal address generator. During synchronous read operations, addresses are latched on ADV#’s rising edge or CLK’s rising (or falling) edge, whichever occurs first. OUTPUT ENABLE: • When asserted, OE# enables the flash device output data buffers during a read cycle. • When OE# is deasserted, data outputs are placed in a high-impedance state. RESET: When low, RST# resets internal automation and inhibits write operations. This reset provides data protection during power transitions. De-asserting RST# enables normal operation and places the flash device in asynchronous read-array mode. WAIT: The WAIT signal indicates valid data during synchronous read modes. It can be configured to be asserted-high or asserted-low, based on bit 10 of the Read Configuration Register. WAIT is tristated if CE# is deasserted. WAIT is not gated by OE#. WRITE ENABLE: WE# controls writes to the CUI and array. Addresses and data are latched on the rising edge of WE#. WRITE PROTECT: Disables/enables the lock-down function. When WP# is asserted, the lock-down mechanism is enabled and blocks marked lock-down cannot be unlocked through software. See Section 13.1, “Block Lock Operations” on page 71 for details on block locking. ERASE AND PROGRAM POWER: A valid voltage on this pin allows erasing or programming. Flash memory contents cannot be altered when VPP < VPPLK . Do not attempt block erase and program operations at invalid VPP voltages. Set VPP = VCC f or in-system program and erase operations. To accommodate resistor or diode drops from the system supply, the VIH level of VPP can be as low as VPPL min. VPP must remain above VPPL min to perform in-system flash device modification. VPP can be 0 V during read operations. VPPH can be applied to main blocks for 1000 cycles maximum and to parameter blocks for 2500 cycles. VPP can be connected to 12 V for a cumulative total not to exceed 80 hours. Extended use of this pin at 12 V might reduce block cycling capability. FLASH DEVICE POWER SUPPLY: Writes are inhibited at VCC < VLKO. Do not attempt flash device operations at invalid VCC voltages. OUTPUT POWER SUPPLY: Enables all outputs to be driven at VCCQ. GROUND: Pins for all internal flash device circuitry must be connected to system ground. OUTPUT GROUND: Provides ground to all outputs which are driven by VCCQ. This signal can be tied directly to VSS. DO NOT USE: Do not use this pin. Do not connect this pin to any power supplies, signals, or other pins; this pin must be floated. NO CONNECT: No internal connection; can be driven or floated. D[15:0] Input/ Output ADV# Input CE# Input CLK Input OE# Input RST# Input WAIT Output WE# Input WP# Input VPP Power/ Input VCC VCCQ VSS VSSQ DU NC Power Power Power Power — — Datasheet 20 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) Table 6: Symbol Signal Descriptions - QUAD+ Package (Sheet 1 of 3) Type Description ADDRESS INPUTS: Inputs for all die addresses during read and write operations. • 128-Mbit Die : AMAX = A22 A[MAX:MIN] Input • 64-Mbit Die : AMAX = A21 • 32-Mbit Die : AMAX = A20 A0 is the lowest-order 16-bit wide address. A[25:24] denote high-order addresses reserved for future flash device densities. DATA INPUTS/OUTPUTS: • Inputs data and commands during write cycles. • Outputs data during read cycles. Data signals float when the flash device or its outputs are deselected. Data are internally latched during writes on the flash device. FLASH CHIP ENABLE: Low-true input. F[3:1]-CE# low selects the associated flash memory die. • When asserted, flash memory internal control logic, input buffers, decoders, and sense amplifiers are active. • When deasserted, the associated flash die is deselected, power is reduced to standby levels, and data and WAIT outputs are placed in high-Z state. • F1-CE# selects or deselects flash die #1. • F2-CE# selects or deselects flash die #2 and is RFU on combinations with only one flash die. • F3-CE# selects or deselects flash die #3 and is RFU on stacked combinations with only one or two flash dies. SRAM CHIP SELECT: Low-true / High-true input (S-CS1# / S-CS2 respectively). • When either/both SRAM Chip Select signals are asserted, SRAM internal control logic, input buffers, decoders, and sense amplifiers are active. • When either/both SRAM Chip Select signals are deasserted, the SRAM is deselected and its power is reduced to standby levels. S-CS1# and S-CS2 are available on stacked combinations with SRAM die and are RFU on stacked combinations without SRAM die. PSRAM CHIP SELECT: Low-true input. • When asserted, PSRAM internal control logic, input buffers, decoders, and sense amplifiers are active. • When deasserted, the PSRAM is deselected and its power is reduced to standby levels. • P1-CS# selects PSRAM die #1 and is available only on stacked combinations with PSRAM die. This ball is an RFU on stacked combinations without PSRAM. • P2-CS# selects PSRAM die #2 and is available only on stacked combinations with two PSRAM dies. This ball is an RFU on stacked combinations without PSRAM or with a single PSRAM. FLASH OUTPUT ENABLE: L ow-true input. • Fx-OE# low enables the output buffers on the selected flash memory device. • F[2:1]-OE# high disables the output buffers on the selected flash memory device, placing them in High-Z. • F1-OE# controls the outputs of flash die #1. • F2-OE# controls the outputs of flash die #2 and flash die #3. F2-OE# is available on stacked combinations with two or three flash die, and is RFU on stacked combinations with only one flash die. RAM OUTPUT ENABLE: Low-true input. • R-OE# low enables the output buffers on the selected RAM. • R-OE# high disables the RAM output buffers, and places the selected RAM outputs in High-Z. R-OE# is available on stacked combinations with PSRAM or SRAM die, and is an RFU on flash-only stacked combinations. FLASH WRITE ENABLE: L ow-true input. F-WE# controls writes to the selected flash die. Address and data are latched on the rising edge of F-WE#. DQ[15:0] Input/ Output F[3:1]-CE# Input S-CS1# S-CS2 Input P[2:1]-CS# Input F[2:1]-OE# Input R-OE# Input F-WE# Input November 2007 Order Number: 290702-13 Datasheet 21 Numonyx™ Numonyx™ Wireless Flash Memory (W30) Table 6: Symbol Signal Descriptions - QUAD+ Package (Sheet 2 of 3) Type Description RAM WRITE ENABLE: Low-true input. R-WE# controls writes to the selected RAM die. R-WE# is available on stacked combinations with PSRAM or SRAM die, and is an RFU on flash-only stacked combinations. CLOCK: Synchronizes the flash die with the system bus clock in synchronous read mode and increments the internal address generator. • During synchronous read operations, addresses are latched on the rising edge of ADV#, or on the next valid CLK edge with ADV# low, whichever occurs first. • During asynchronous mode read operations, addresses are latched on the rising edge ADV#, or are continuously flow-through when ADV# is kept asserted. WAIT: Output signal. Indicates invalid data during synchronous array or non-array flash memory reads. Read Configuration Register bit 10 (RCR[10]) determines WAIT-asserted polarity (high or low). WAIT is High-Z if F-CE# is deasserted; WAIT is not gated by F-OE#. • In synchronous array or non-array flash memory read modes, WAIT indicates invalid data when asserted and valid data when deasserted. • In asynchronous flash memory page read, and all flash memory write modes, WAIT is asserted. FLASH WRITE PROTECT: Low-true input. F-WP# enables/disables the lock-down protection mechanism of the selected flash die. • F-WP# low enables the lock-down mechanism where locked down blocks cannot be unlocked using software commands. • F-WP# high disables the lock-down mechanism, allowing locked down blocks to be unlocked using software commands. ADDRESS VALID: Low-true input. • During synchronous flash memory read operations, addresses are latched on the rising edge of ADV#, or on the next valid CLK edge with ADV# low, whichever occurs first. • During asynchronous flash memory read operations, addresses are latched on the rising edge of ADV#, or are continuously flow-through when ADV# is kept asserted. RAM UPPER / LOWER BYTE ENABLES: Low-true input. During RAM read and write cycles: • R-UB# low enables the RAM high order bytes on D[15:8]. • R-LB# low enables the RAM low-order bytes on D[7:0]. R-UB# and R-LB# are available on stacked combinations with PSRAM or SRAM die, and are RFU on flash-only stacked combinations. FLASH RESET: L ow-true input. • F-RST# low initializes flash device internal circuitry and disables flash device operations. • F-RST# high enables flash device operation. Exit from reset places the flash device in asynchronous read array mode. P-Mode (PSRAM Mode): Low-true input. P-Mode programs the Configuration Register, and enters/exits the Low Power Mode of the PSRAM die. P-Mode is available on stacked combinations with asynchronous-only PSRAM die. • P-CRE (PSRAM Configuration Register Enable): High-true input. • P-CRE is high, write operations load the Refresh Control Register or Bus Control Register. • P-CRE applies only on combinations with synchronous PSRAM die. P-Mode, P-CRE is an RFU on stacked combinations without PSRAM die. FLASH PROGRAM AND ERASE POWER: Valid F-VPP voltage on this ball enables flash memory device program/erase operations. Flash memory array contents cannot be altered when F-VPP(F-VPEN) < VPPLK (VPENLK). Do not attempt erase / program operations at invalid F-VPP (F-VPEN) voltages. F-VPEN (Erase/Program/Block Lock Enables) is not available for L18/L30 SCSP products. R-WE# Input CLK Input WAIT Output F-WP# Input ADV# Input R-UB# R-LB# Input F-RST# Input P-Mode, P-CRE Input F-VPP, F-VPEN Power Datasheet 22 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) Table 6: Symbol Signal Descriptions - QUAD+ Package (Sheet 3 of 3) Type Description FLASH LOGIC POWER: • F1-VCC supplies power to the core logic of flash die #1. • F2-VCC supplies power to the core logic of flash die #2 and flash die #3. Write operations are inhibited when F-VCC < VLKO. Do not attempt flash device operations at invalid F-VCC voltages. F2-VCC is available on stacked combinations with two or three flash dies, and is an RFU on stacked combinations with only one flash die. SRAM POWER SUPPLY: Supplies power for SRAM operations. S-VCC is available on stacked combinations with SRAM die, and is RFU on stacked combinations without SRAM die. PSRAM POWER SUPPLY: Supplies power for PSRAM operations. P-VCC is available on stacked combinations with PSRAM die, and is RFU on stacked combinations without PSRAM die. FLASH DEVICE I/O POWER: Supply power for the flash device input and output buffers. FLASH DEVICE GROUND: Connect to system ground. Do not float any VSS connection. RESERVED for FUTURE USE: Reserved for future flash device functionality/ enhancements. Contact Numonyx regarding the use of balls designated RFU. DO NOT USE: Do not connect to any other signal, or power supply; must be left floating. F[2:1]-VCC Power S-VCC Power P-VCC VCCQ VSS RFU DU Power Power Power — — November 2007 Order Number: 290702-13 Datasheet 23 Numonyx™ Numonyx™ Wireless Flash Memory (W30) 5.0 5.1 Warning: Maximum Ratings and Operating Conditions Absolute Maximum Ratings Stressing the flash device beyond the Absolute Maximum Ratings in Table 7 might cause permanent damage. These are stress ratings only. Notice: This datasheet contains information on products in the design phase of development. The information here is subject to change without notice. Do not finalize a design with this information. Table 7: Absolute Maximum Ratings Parameter Maximum Rating –40 °C to +85 °C –65 °C to +125 °C Note Temperature under Bias Storage Temperature Voltage on Any Pin (except VCC, VCCQ, VPP) VPP Voltage VCC Voltage VCCQ Voltage Output Short Circuit Current –0.5 V to +3.8 V –0.2 V to +14 V –0.2 V to +2.45 V –0.2 V to +3.8 V 100 mA 1,2,3 1 1 4 Notes: 1. All specified voltages are relative to VSS. Minimum DC voltage is –0.5 V on input/output pins and –0.2 V on VCC and VPP pins. During transitions, this level might undershoot to –2.0 V for periods < 20 ns. Maximum DC voltage on input/output pins is VCC + 0.5 V which, during transitions, might overshoot to VCC + 2.0 V for periods < 20 ns. 2. Maximum DC voltage on VPP might overshoot to +14.0 V for periods < 20 ns. 3. VPP program voltage is normally VPPL. VPP can be 12 V ± 0.6 V for 1000 cycles on the main blocks and 2500 cycles on the parameter blocks during program/erase. 4. Output shorted for no more than one second. No more than one output shorted at a time. 5.2 Operating Conditions Do not operate the W30 flash memory device beyond the Operating Conditions in Table 8. Extended exposure beyond these Operating Conditions might affect flash device reliability. Table 8: Symbol TA VCC VCCQ VPPL VPPH tPPH Extended Temperature Operation (Sheet 1 of 2) Parameter 1 Operating Temperature VCC Supply Voltage I/O Supply Voltage VPP Voltage Supply (Logic Level) Factory Programming VPP Maximum VPP Hours VPP = 12 V Min –40 1.7 2.2 0.90 11.4 Nom 25 1.8 3.0 1.80 12.0 Max 85 1.90 3.3 1.95 12.6 80 Hours V Unit °C Notes - 3 3 2 2 2 Datasheet 24 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) Table 8: Symbol Block Erase Cycles Notes: 1. See 2. 3. 4. Extended Temperature Operation (Sheet 2 of 2) Parameter1 Main and Parameter Blocks Main Blocks Parameter Blocks VPP < VCC VPP = 12 V VPP = 12 V Min 100,000 Nom Max 1000 2500 Cycles Unit Notes 2 2 2 VPP is normally VPPL. VPP can be connected to 11.4 V–12.6 V for 1000 cycles on main blocks for extended temperatures and 2500 cycles on parameter blocks at extended temperature. Contact your Numonyx field representative for VCC/VCCQ operations down to 1.65 V. See the tables in Section 6.0, “Electrical Specifications” on page 26 and in Section 7.0, “AC Characteristics” on page 28 for operating characteristics Section 6.1, “DC Current Characteristics” on page 26 and Section 6.2, “DC Voltage Characteristics” on page 27 for specific voltage-range specifications. November 2007 Order Number: 290702-13 Datasheet 25 Numonyx™ Numonyx™ Wireless Flash Memory (W30) 6.0 6.1 Table 9: Electrical Specifications DC Current Characteristics DC Current Characteristics (Sheet 1 of 2) VCCQ = 3.0 V Sym Parameter (1) Note 32/64 Mbit Typ Max ±2 128 Mbit Typ Max ±2 Uni t Test Conditions ILI Input Load 9 - µA VCC = VCCMax VCCQ = VCCQMax VIN = VCCQ or GND VCC = VCCMax VCCQ = VCCQMax VIN = VCCQ or GND VCC = VCCMax VCCQ = VCCQMax CE# = VCCQ RST# =VCCQ VCC = VCCMax VCCQ = VCCQMax CE# = VSSQ RST# =VCCQ All other inputs =VCCQ or VSSQ 4 Word Read Burst length = 4 Burst length = 8 Burst length =16 Burst length = Continuous VCC = VCC Max CE# = VIL OE# = VIH Inputs = VIH or VIL ILO 180 nm ICCS 130 nm ICCS 180 nm ICCAPS 130 nm ICCAPS Output Leakage DQ[15:0] - ±10 - ±10 µA 6 VCC Standby 10 8 6 APS 11 8 Asynchronous Page Mode f=13 MHz 21 50 21 50 6 8 6 8 30 µA 70 30 µA 70 2 4 7 7 15 16 19 22 40 15 40 15 21 21 5 15 0.10 22 4 7 9 11 12 18 8 18 8 6 6 0.2 2 0.05 16 10 15 16 19 22 40 15 40 15 30 30 5 15 0.10 37 mA mA mA mA mA mA mA mA mA µA µA µA µA mA ICCR Average VCC Read Synchronous CLK = 40 MHz 9 2 11 12 18 8 18 8 6 6 0.2 2 0.05 8 ICCW VCC Program 3,4,5 VPP = VPPL, Program in Progress VPP = VPPH, Program in Progress VPP = VPPL, Block Erase in Progress VPP = VPPH, Block Erase in Progress CE# = VCC, Program Suspended CE# = VCC, Erase Suspended VPP < VCC ICCE ICCWS ICCES IPPS (IPPWS, IPPES) IPPR IPPW VCC Block Erase VCC Program Suspend VCC Erase Suspend VPP Standby VPP Program Suspend VPP Erase Suspend VPP Read VPP Program 3,4,5 6 6 3 4 VPP < VCC VPP = VPPL, Program in Progress VPP = VPPH, Program in Progress Datasheet 26 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) Table 9: DC Current Characteristics (Sheet 2 of 2) VCCQ= 3.0 V Sym Parameter (1) Note 32/64 Mbit Typ Max 0.10 22 128 Mbit Typ 0.05 8 Max 0.10 22 Uni t Test Conditions IPPE VPP Erase 4 0.05 8 mA VPP = VPPL, Erase in Progress VPP = VPPH, Erase in Progress Notes: 1. All currents are RMS unless noted. Typical values at typical VCC , TA = +25°C. 2. Automatic Power Savings (APS) reduces ICCR to approximately standby levels in static operation. See ICCRQ specification for details. 3. Sampled, not 100% tested. 4. VCC read + program current is the sum of VCC read and VCC program currents. 5. VCC read + erase current is the sum of VCC read and VCC erase currents. 6. ICCES is specified with the flash device deselected. If the flash device is read while in erase suspend, the current is ICCES plus ICCR. 7. VPP < VPPLK inhibits erase and program operations. Do not use VPPL and VPPH outside their valid ranges. 8. VIL can undershoot to –0.4V and VIH can overshoot to VCCQ+0.4V for durations of 20 ns or less. 9. If VIN>VCC the input load current increases to 10 µA max. 10. ICCS is the average current measured over any 5ms time interval 5 µs after a CE# de-assertion. 11. Refer to section Section 8.2, “Automatic Power Savings (APS)” on page 44 f or ICCAPS measurement details. 6.2 DC Voltage Characteristics Table 10: DC Voltage Characteristics V CCQ= 3.0 V Sym Parameter (1) Note 32/64 Mbit Min Max 0.4 VCCQ 0.1 Min 0 VCCQ – 0.4 - 128 Mbit Max 0.4 VCCQ 0.1 Unit Test Conditions VIL VIH Input Low Input High 8 - 0 VCCQ – 0.4 - V V VCC = VCCMin VCCQ = VCCQMin IOL = 100 µA VCC = VCCMin VCCQ = VCCQMin IOH = –100 µA VOL VOH VPPLK VLKO VILKOQ Note: Output Low - V Output High 7 - VCCQ – 0.1 1.0 0.9 0.4 - VCCQ – 0.1 1.0 0.9 0.4 - V V V V VPP Lock-Out VCC Lock VCCQ Lock For all numbered note references in this table, refer to the notes in page 26. Table 9, “DC Current Characteristics” on November 2007 Order Number: 290702-13 Datasheet 27 Numonyx™ Numonyx™ Wireless Flash Memory (W30) 7.0 7.1 AC Characteristics Read Operations - 130 nm Lithography Table 11: Read Operations - 130 nm Lithography (Sheet 1 of 2) 32-Mbit 64-Mbit # Sym Parameter 1 128-Mbit -85 -70 Min Max Units Notes -70 Min Max Min Max Asynchronous Specifications R1 R2 R3 R4 R5 R6 R7 R8 R9 R10 R11 R12 R13 tAVAV tAVQV tELQV tGLQV tPHQV tELQX tGLQX tEHQZ tGHQZ tOH tEHEL tELTV tEHTZ Read Cycle Time Address to Output Valid CE# Low to Output Valid OE# Low to Output Valid RST# High to Output Valid CE# Low to Output Low-Z OE# Low to Output Low-Z CE# High to Output High-Z OE# High to Output High-Z CE# (OE#) High to Output Low-Z CE# Pulse Width High CE# Low to WAIT Valid CE# High to WAIT High-Z 70 0 0 0 20 70 70 30 150 20 14 20 25 85 0 0 0 20 70 0 0 0 20 70 70 30 150 20 14 22 25 ns ns ns ns ns ns ns ns ns ns ns ns ns 6 6 6 3 4 3,4 4 3,4 3,4 5 5 4,5 85 85 30 150 20 14 22 25 Latching Specifications R101 R102 R103 R104 R105 R106 R108 tAVVH tELVH tVLQV tVLVH tVHVL tVHAX tAPA Address Setup to ADV# High CE# Low to ADV# High ADV# Low to Output Valid ADV# Pulse Width Low ADV# Pulse Width High Address Hold from ADV# High Page Address Access Time 10 10 10 10 9 70 25 10 10 9 10 10 12 12 12 12 9 70 25 ns ns ns ns ns ns ns 6 2 - 85 25 Clock Specifications R200 R201 R202 R203 fCLK tCLK tCH/L tCHCL CLK Frequency CLK Period CLK High or Low Time CLK Fall or Rise Time 25 9.5 40 3 30 9.5 33 5 25 9.5 40 5 MHz ns ns ns - Datasheet 28 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) Table 11: Read Operations - 130 nm Lithography (Sheet 2 of 2) 32-Mbit 64-Mbit # Sym Parameter 1 128-Mbit -85 -70 Min Max Units Notes -70 Min Max Min Max Synchronous Specifications R301 R302 R303 R304 R305 R306 R307 tAVCH tVLCH tELCH tCHQV tCHQX tCHAX tCHTV Address Valid Setup to CLK ADV# Low Setup to CLK CE# Low Setup to CLK CLK to Output Valid Output Hold from CLK Address Hold from CLK CLK to WAIT Valid 9 10 9 5 10 20 20 9 10 9 5 10 22 22 10 10 9 5 10 20 22 ns ns ns ns ns ns ns 2 - Notes: 1. See Figure 22, “AC Input/Output Reference Waveform” on page 46 for timing measurements and maximum allowable input slew rate. 2. Address hold in synchronous-burst mode is defined as tCHAX or tVHAX , whichever timing specification is satisfied first. 3. OE# can be delayed by up to tELQV – tGLQV after the falling edge of CE# without impact to tELQV. 4. Sampled, not 100% tested. 5. Applies only to subsequent synchronous reads. 6. During the initial access of a synchronous burst read, data from the first word might begin to be driven onto the data bus as early as the first clock edge after tAVQV. 7.2 Read Operations - 180 nm Lithography Table 12: Read Operations - 180 nm Lithography (Sheet 1 of 2) 32-Mbit 64-Mbit # Sym Parameter 1 128-Mbit -85 -90 Min Max Units Notes -70 Min Max Min Max Asynchronous Specifications R1 R2 R3 R4 R5 R6 R7 R8 R9 R10 R11 R12 R13 tAVAV tAVQV tELQV tGLQV tPHQV tELQX tGLQX tEHQZ tGHQZ tOH tEHEL tELTV tEHTZ Read Cycle Time Address to Output Valid CE# Low to Output Valid OE# Low to Output Valid RST# High to Output Valid CE# Low to Output Low-Z OE# Low to Output Low-Z CE# High to Output High-Z OE# High to Output High-Z CE# (OE#) High to Output Low-Z CE# Pulse Width High CE# Low to WAIT Valid CE# High to WAIT High-Z 70 0 0 0 20 70 70 30 150 20 14 20 25 85 0 0 0 20 90 0 0 90 90 30 150 20 14 0 20 22 25 ns ns ns ns ns ns ns ns ns ns ns ns ns 6 6 6 3 4 3,4 4 3,4 3,4 5 5 4,5 85 85 30 150 20 14 22 25 November 2007 Order Number: 290702-13 Datasheet 29 Numonyx™ Numonyx™ Wireless Flash Memory (W30) Table 12: Read Operations - 180 nm Lithography (Sheet 2 of 2) 32-Mbit 64-Mbit # Sym Parameter 1 128-Mbit -85 -90 Min Max Units Notes -70 Min Max Min Max Latching Specifications R101 R102 R103 R104 R105 R106 R108 tAVVH tELVH tVLQV tVLVH tVHVL tVHAX tAPA Address Setup to ADV# High CE# Low to ADV# High ADV# Low to Output Valid ADV# Pulse Width Low ADV# Pulse Width High Address Hold from ADV# High Page Address Access Time 10 10 10 10 9 70 25 10 10 10 10 9 85 25 12 12 12 12 9 90 30 ns ns ns ns ns ns ns 6 2 - Clock Specifications R200 R201 R202 R203 fCLK tCLK tCH/L tCHCL CLK Frequency CLK Period CLK High or Low Time CLK Fall or Rise Time 25 9.5 40 3 30 9.5 33 5 30 9.5 33 5 MHz ns ns ns - Synchronous Specifications R301 R302 R303 R304 R305 R306 R307 tAVCH tVLCH tELCH tCHQV tCHQX tCHAX tCHTV Address Valid Setup to CLK ADV# Low Setup to CLK CE# Low Setup to CLK CLK to Output Valid Output Hold from CLK Address Hold from CLK CLK to WAIT Valid 9 10 9 5 10 20 20 9 10 9 5 10 22 22 10 10 9 5 10 22 22 ns ns ns ns ns ns ns 2 - Notes: 1. See Figure 22, “AC Input/Output Reference Waveform” on page 46 for timing measurements and maximum allowable input slew rate. 2. Address hold in synchronous-burst mode is defined as tCHAX or tVHAX, whichever timing specification is satisfied first. 3. OE# can be delayed by up to tELQV– tGLQV after the falling edge of CE# without impact to tELQV. 4. Sampled, not 100% tested. 5. Applies only to subsequent synchronous reads. 6. During the initial access of a synchronous burst read, data from the first word might begin to be driven onto the data bus as early as the first clock edge after tAVQV. Datasheet 30 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) Figure 8: Asynchronous Read Operation Waveform R1 Address [A] VIH VIL R2 Valid Address CE# [E] VIH VIL R3 R8 R4 OE# [G] VIH VIL R7 R9 WE# [W] VIH VIL VOH VOL VOH VOL R5 High Z WAIT [T] Note 1 High Z Data [D/Q] High Z Valid Output R10 RST# [P] VIH VIL Notes: . 1. WAIT shown asserted (RCR[10]=0) 2. ADV# assumed to be driven to VIL in this waveform November 2007 Order Number: 290702-13 Datasheet 31 Numonyx™ Numonyx™ Wireless Flash Memory (W30) Figure 9: Latched Asynchronous Read Operation Waveform R1 A[MAX:2] [A] VIH VIL Valid Address Valid Address A[1:0] [A] VIH VIL R2 R101 R105 R106 Valid Address Valid Address ADV# [V] VIH VIL R104 R103 CE# [E] VIH VIL R102 R3 R4 R6 R8 OE# [G] VIH VIL R7 R9 WE# [W] VIH VIL Data [Q] VOH VOL High Z Valid Output R5 R10 RST# [P] VIH VIL Datasheet 32 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) Figure 10: Page-Mode Read Operation Waveform R1 A[MAX:2] [A] VIH VIL Valid Address R2 A[1:0] [A] VIH VIL R101 R105 R106 Valid Address Valid Address Valid Address Valid Address ADV# [V] VIH VIL R104 R103 CE# [E] VIH VIL R102 R3 R4 R6 R8 OE# [G] VIH VIL R7 R9 WE# [W] WAIT [T] VIH VIL VOH VOL VOH VOL R5 High Z Valid Output Valid Output Valid Output Valid Output High Z Note 1 R108 High Z Data [D/Q] R10 RST# [P] VIH VIL Note: WAIT shown asserted (RCR[10] = 0). November 2007 Order Number: 290702-13 Datasheet 33 Numonyx™ Numonyx™ Wireless Flash Memory (W30) Figure 11: Single Synchronous Read-Array Operation Waveform R13 R12 Notes: 1. 2. 3. Section 14.2, “First Access Latency Count (RCR[13:11])” on page 80 describes how to insert clock cycles during the initial access. WAIT (shown asserted; RCR[10]=0) can be configured to assert either during, or one data cycle before, valid data. In this waveform, an x-word burst is initiated to the main array and it is terminated by a CE# de-assertion after the first word in the burst. If this access had been done to Status, ID, or Query reads, the asserted (low) WAIT signal would have remained asserted (low) as long as CE# is asserted (low). Datasheet 34 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) Figure 12: Synchronous 4-Word Burst Read Operation Waveform R11 R12 R13 Notes: 1. 2. Section 14.2, “First Access Latency Count (RCR[13:11])” on page 80 describes how to insert clock cycles during the initial access. WAIT (shown asserted; RCR[10] = 0) can be configured to assert either during, or one data cycle before, valid data. November 2007 Order Number: 290702-13 Datasheet 35 Numonyx™ Numonyx™ Wireless Flash Memory (W30) Figure 13: WAIT Functionality for EOWL (End-of-Word Line) Condition Waveform R12 Notes: 1. 2. Section 14.2, “First Access Latency Count (RCR[13:11])” on page 80 describes how to insert clock cycles during the initial access. WAIT (shown asserted; RCR[10]=0) can be configured to assert either during, or one data cycle before, valid data. (This example assumes a wait delay of two clocks.) Datasheet 36 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) Figure 14: WAIT Signal in Synchronous Non-Read Array Operation Waveform R13 R12 Notes: 1. 2. cycles during the initial access. WAIT shown asserted (RCR[10]=0). Section 14.2, “First Access Latency Count (RCR[13:11])” on page 80 describes how to insert clock November 2007 Order Number: 290702-13 Datasheet 37 Numonyx™ Numonyx™ Wireless Flash Memory (W30) Figure 15: Burst Suspend R304 CLK R1 R2 Address [A] R101 R105 ADV# R3 CE# [E] R4 OE# [G] R13 R12 WAIT [T] WE# [W] R7 R6 DATA [D/Q] Q0 R304 Q1 Q1 R304 Q2 R9 R4 R9 R8 R106 R305 R305 R305 Note: 1. During Burst Suspend, the Clock signal can be held high or low. 7.3 AC Write Characteristics Table 13: AC Write Characteristics (Sheet 1 of 2) 32-Mbit 64-Mbit 128-Mbit # Sym Parameter 1,2 Notes -70 Min Max - -85 / -90 Min 150 0 60 60 60 0 0 0 25 200 0 0 200 Max - Unit W1 W2 W3 W4 W5 W6 W7 W8 W9 W10 W11 W12 W13 tPHWL (tPHEL) tELWL (tWLEL) tWLWH (tELEH) tDVWH (tDVEH) tAVWH (tAVEH) tWHEH (tEHWH) tWHDX (tEHDX) tWHAX (tEHAX) tWHWL (tEHEL) tVPWH (tVPEH) tQVVL tQVBL tBHWH (tBHEH) RST# High Recovery to WE# (CE#) Low CE# (WE#) Setup to WE# (CE#) Low WE# (CE#) Write Pulse Width Low Data Setup to WE# (CE#) High Address Setup to WE# (CE#) High CE# (WE#) Hold from WE# (CE#) High Data Hold from WE# (CE#) High Address Hold from WE# (CE#) High WE# (CE#) Pulse Width High VPP Setup to WE# (CE#) High VPP Hold from Valid SRD WP# Hold from Valid SRD WP# Setup to WE# (CE#) High 3 4 150 0 45 45 45 0 0 0 ns ns ns ns ns ns ns ns ns ns ns ns ns 5,6,7 3 3, 8 3, 8 3 25 200 0 0 200 Datasheet 38 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) Table 13: AC Write Characteristics (Sheet 2 of 2) 32-Mbit 64-Mbit 128-Mbit # Sym Parameter 1,2 Notes -70 Min Max - -85 / -90 Min 0 tAVQV + 50 0 20 20 Max - Unit W14 W16 W18 W19 W20 Notes: 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. tWHGL (tEHGL) tWHQV tWHAV tWHCV tWHVH Write Recovery before Read WE# High to Valid Data WE# High to Address Valid WE# High to CLK Valid WE# High to ADV# High 3,6,1 0 3,9,1 0 3,10 3,10 0 tAVQV + 40 0 20 20 ns ns ns ns ns Write timing characteristics during erase suspend are the same as during write-only operations. A write operation can be terminated with either CE# or WE#. Sampled, not 100% tested. Write pulse width low (tWLWH or tELEH) is defined from CE# or WE# low (whichever occurs last) to CE# or WE# high (whichever occurs first). Hence, tWLWH = tELEH = tWLEH = tELWH. Write pulse width high (tWHWL or tEHEL) is defined from CE# or WE# high (whichever is first) to CE# or WE# low (whichever is last). Hence, tWHWL = tEHEL = tWHEL = tEHWL. System designers must take this into account, and can insert a software No-Op instruction to delay the first read after issuing a command. For commands other than resume commands. VPP must be held at VPPL or VPPH until block erase or program success is determined. Applicable during asynchronous reads following a write. tWHCH/L OR tWHVH must be met when transitioning from a write cycle to a synchronous burst read. tWHCH/L and tWHVH both refer to the address latching event (either the rising/falling clock edge or the rising ADV# edge, whichever occurs first). November 2007 Order Number: 290702-13 Datasheet 39 Numonyx™ Numonyx™ Wireless Flash Memory (W30) Figure 16: Write Operations Waveform CLK [C] VIH VIL W19 VIH VIL Note 1 Valid Address Note 2 Note 3 Valid Address Note 4 Note 5 Valid Address Address [A] W5 R101 R105 R106 W8 W18 ADV# [V] VIH VIL R104 W20 CE# (WE#) [E(W)] VIH VIL W2 W6 Note 6 OE# [G] VIH VIL W3 W9 W14 WE# (CE#) [W(E)] VIH VIL W1 W7 Data In Data In Note 6 W16 Valid SRD Data [Q] VIH VIL W4 RST# [P] VIH VIL W13 W12 WP# [B] VIH VIL W10 VPPH W11 VPP [V] VPPLK VIL Notes: 1. 2. 3. 4. 5. 6. 7. VCC power-up and standby. Write Program or Erase Setup command. Write valid address and data (for program) or Erase Confirm command. Automated program/erase delay. Read status register data (SRD) to determine program/erase operation completion. OE# and CE# must be asserted and WE# must be deasserted for read operations. CLK is ignored (but can be kept active/toggling). Datasheet 40 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) Figure 17: Asynchronous Read to Write Operation Waveform R1 R2 Address [A] R3 CE# [E} R4 OE# [G] W3 W2 WE# [W] R7 R6 Data [D/Q] R5 RST# [P] Q W7 R10 W4 D W6 R9 R8 W5 W8 Figure 18: Asynchronous Write to Read Operation W5 A ddress [A] W2 CE# [E} W3 WE# [W] W8 R1 W6 R10 W18 W14 OE# [G] W7 W4 Data [D/Q] W1 RST # [P] D R4 R2 R3 Q R9 R8 November 2007 Order Number: 290702-13 Datasheet 41 Numonyx™ Numonyx™ Wireless Flash Memory (W30) Figure 19: Synchronous Read to Write Operation Latency Count R301 R302 R306 CLK [C] R2 R101 Address [A] R105 R106 R102 ADV# [V] R303 R3 CE# [E] R4 R8 OE# [G] W15 W3 W2 WE# R12 WAIT [T] R304 R7 Data [D/Q] Q R305 D R13 W7 D R307 W19 W9 W8 R11 W6 R104 W20 W5 W18 Figure 20: Synchronous Write To Read Operation Lat ency Count R302 R301 R2 CLK W5 A ddress [A] W20 ADV# W6 W2 CE# [E} W3 WE# [W] R4 OE# [G] R12 WAIT [T ] W7 W4 Data [D/Q] W1 RST# [P] D R3 Q R304 R304 R305 Q R307 W18 W19 R11 R303 R106 R104 W8 R306 Datasheet 42 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) 7.4 Erase and Program Times Table 14: Erase and Program Times Operation Symbol Parameter Description1 Notes V PPL Typ Erasing and Suspending Erase Time Suspend Latency Programming W200 Program Time W201 W202 tPROG/W tPROG/PB tPROG/MB Single Word 4-Kword Parameter Block 32-Kword Main Block W500 W501 W600 W601 tERS/PB tERS/MB tSUSP/P tSUSP/E 4-Kword Parameter Block 32-Kword Main Block Program Suspend Erase Suspend Max VPPH Typ Max Unit 2,3 2,3 2 2 2 2,3 2,3 4 2,3 2,3 - 0.3 0.7 5 5 2.5 4 10 20 0.25 0.4 5 5 2.5 4 10 20 s s µs µs 12 0.05 0.4 150 .23 1.8 8 0.03 0.24 130 0.07 0.6 µs s s Enhanced Factory Programming 5 W400 Program W401 W402 W403 Operation Latency W404 W405 tEFP/W tEFP/PB tEFP/MB tEFP/SETUP tEFP/TRAN tEFP/VERIFY Single Word 4-Kword Parameter Block 32-Kword Main Block EFP Setup Program to Verify Transition Verify N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A 3.5 15 120 2.7 1.7 16 5 5.6 130 µs ms ms µs µs µs Notes: 1. Unless noted otherwise, all parameters are measured at TA = +25 °C and nominal voltages, and are sampled, not 100% tested. 2. Excludes external system-level overhead. 3. Exact results might vary based on system overhead. 4. W400-Typ is the calculated delay for a single programming pulse. W400-Max includes the delay when programming within a new word-line. 5. Some EFP performance degradation might occur if block cycling exceeds 10. November 2007 Order Number: 290702-13 Datasheet 43 Numonyx™ Numonyx™ Wireless Flash Memory (W30) 8.0 Power and Reset Specifications Product Name devices have a layered approach to power savings that can significantly reduce overall system power consumption. • The APS feature reduces power consumption when the flash device is selected but idle. • If CE# is deasserted, the memory enters its standby mode, where current consumption is even lower. • Asserting RST# provides current savings similar to standby mode. The combination of these features can minimize memory power consumption, and therefore, overall system power consumption. 8.1 Active Power With CE# at VIL and RST# at VIH , the flash device is in the active mode. Refer to Section 6.1, “DC Current Characteristics” on page 26, for ICC values. When the flash device is in active state, it consumes the most power from the system. Minimizing flash device active current therefore reduces system power consumption, especially in battery-powered applications. 8.2 Automatic Power Savings (APS) Automatic Power Saving (APS) provides low power operation during a read active state. ICCAPS is the average current measured over any 5 ms time interval, 5 µs after CE# is deasserted. During APS, average current is measured over the same time interval 5 µs after the following events: • There is no internal read, program or erase activity. • CE# is asserted. • The address lines are quiescent, and at VIL or VIH. OE# can be driven during APS. 8.3 Standby Power When CE# is deasserted, the flash device is deselected and placed in standby, substantially reducing power consumption. In standby, the data outputs are placed in High-Z, independent of the level placed on OE#. Standby current, ICCS, is the average current measured over any 5 ms time interval, 5 µs after CE# is deasserted. During standby, average current is measured over the same time interval 5 µs after CE# is deasserted. When the flash device is deselected (while CE# is deasserted) during a program or erase operation, it continues to consume active power until the program or erase operation completes. 8.4 Power-Up/Down Characteristics The flash device is protected against accidental block erasure or programming during power transitions. Power supply sequencing is not required if VCC and VPP are connected together; so it does not matter whether VPP or VCC powers-up first. If VPP is not connected to the system supply, then VCC must attain VCCMIN before applying VCCQ and VPP. Do not drive flash device inputs before supply voltage = VCCQMIN. Power supply transitions can occur only when RST# is low. Datasheet 44 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) 8.4.1 System Reset and RST# The use of RST# during system reset is important with automated program/erase flash devices, because the system expects to read from the flash memory when it comes out of reset. If a CPU reset occurs without a flash memory reset, the CPU is not properly initialized, because the flash memory might be providing status information instead of array data. Note: To allow proper CPU/flash device initialization at system reset, connect RST# to the system CPU RESET# signal. System designers must guard against spurious writes when VCC voltages are above VLKO. Because both WE# and CE# must be low for a command write, driving either signal to VIH inhibits writes to the flash device. The CUI architecture provides additional protection, because memory contents can be altered only after successful completion of the two-step command sequences. The flash device is also disabled until RST# is brought to VIH, regardless of its control input states. By holding the flash device in reset (RST# connected to system PowerGood) during power-up/down, invalid bus conditions during power-up can be masked, providing yet another level of memory protection. 8.4.2 VCC, VPP, and RST# Transitions The CUI latches commands issued by system software, and is not altered by VPP or CE# transitions or WSM actions. Read-array mode is the power-up default state after the flash device exits from reset mode or after VCC transitions above VLKO (Lockout voltage). After completing program or block erase operations (even after VPP transitions below VPPLK), the Read Array command must reset the CUI to read-array mode if flash memory array access is desired. 8.5 Power Supply Decoupling When the flash device is accessed, many internal conditions change. Circuits are enabled to charge pumps and switch voltages. This internal activity produces transient noise. To minimize the effect of this transient noise, device decoupling capacitors are required. Transient current magnitudes depend on the flash device output capacitive and inductive loading. Two-line control and proper decoupling capacitor selection suppresses these transient voltage peaks. Note: Each flash device must have a 0.1 µF ceramic capacitor connected between each power (VCC, VCCQ, VPP), and ground (VSS, VSSQ) signal. High-frequency, inherently lowinductance capacitors must be as close as possible to the package signals. November 2007 Order Number: 290702-13 Datasheet 45 Numonyx™ Numonyx™ Wireless Flash Memory (W30) 8.6 Reset Specifications Table 15: Reset Specifications # P1 P2 P3 Notes: 1. 2. 3. 4. 5. 6. Symbol tPLPH tPLRH tVCCPH Parameter1 RST# Low to Reset during Read RST# Low to Reset during Block Erase RST# Low to Reset during Program VCC Power Valid to Reset Notes 1, 2, 3, 4 1, 3, 4, 5 1, 3, 4, 5 1,3,4,5,6 Min 100 60 Max 20 10 Unit ns µs µs µs These specifications are valid for all product versions (packages and speeds). The flash device might reset if tPLPH< tPLPHMin, but this is not guaranteed. Not applicable if RST# is tied to VCC. Sampled, but not 100% tested. If RST# is tied to VCC, the flash device is not ready until tVCCPH occurs after when VCC > VCC Min. If RST# is tied to any supply/signal with VCCQ voltage levels, the RST# input voltage must not exceed VCC until VCC > VCC Min. Figure 21: Reset Operations Waveforms P1 R5 (A) Reset during read mode RST# [P] VIH VIL P2 (B) Reset during program or block erase P1 ≤ P2 (C) Reset during program or block erase P1 ≥ P2 Abort Complete R5 RST# [P] VIH VIL P2 Abort Complete R5 RST# [P] VIH VIL P3 (D) VCC Power-up to RST# high VCC VCC 0V 8.7 AC I/O Test Conditions Figure 22: AC Input/Output Reference Waveform VCCQ Input 0V Note: Input timing begins, and output timing ends, at VCCQ/2. Input rise and fall times (10% to 90%) < 5 ns. Worst case speed conditions are when VCC = VCC Min. VCCQ/2 Test Points VCCQ/2 Output Datasheet 46 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) Figure 23: Transient Equivalent Testing Load Circuit VCCQ R1 Device Under Test Out CL R2 Note: See Table 16 for component values. Table 16: Test Configuration Component Values for Worst Case Speed Conditions Test Configuration VCCQMin Standard Test Note: CL includes jig capacitance. CL (pF) 30 R1 (k Ω) 25 R1 (kΩ) 25 Figure 24: Clock Input AC Waveform R201 CLK [C] VIH VIL R202 R203 8.8 Symbol CIN COUT CCE § Flash Device Capacitance TA = +25 °C, f = 1 MHz Parameter§ Input Capacitance Output Capacitance CE# Input Capacitance Typ 6 8 10 Max 8 12 12 Unit pF pF pF Condition VIN = 0.0 V VOUT = 0.0 V VIN = 0.0 V Sampled, not 100% tested. November 2007 Order Number: 290702-13 Datasheet 47 Numonyx™ Numonyx™ Wireless Flash Memory (W30) 9.0 Flash Device Operations This chapter provides an overview of flash device operations. The W30 flash memory device family includes an on-chip Write State Machine (WSM) to manage block erase and program algorithms. The WSM Command User Interface (CUI) allows minimal processor overhead with RAM-like interface timings. 9.1 Bus Operations Table 17: Bus Operations Summary Bus Operation Asynchronous Read Synchronous Burst Suspend Write Output Disable Standby Reset RST# VIH VIH VIH VIH VIH VIH VIL CLK X Running Halted X X X X ADV# L L X L X X X CE# L L L L L H X OE# L L H H H X X WE# H H H L H X X WAIT Asserted DQ[15:0 ] Output Output Output Input High-Z High-Z High-Z Notes 1 2 3 3 3,4 Driven Active Asserted Asserted High-Z High-Z Notes: 1. WAIT is valid only during synchronous array-read operations. 2. Refer to the Table 19, “Bus Cycle Definitions” on page 52 f or valid DQ[15:0] during a write operation. 3. X = Don’t Care (H or L). 4. RST# must be at VSS ± 0.2 V to meet the maximum specified power-down current. 9.1.1 Read The W30 flash memory device has several read configurations: • Asynchronous page mode read. • Synchronous burst mode read — outputs four, eight, sixteen, or continuous words, from main blocks and parameter blocks. Several read modes are available in each partition: • Read-array mode: read accesses return flash memory array data from the addressed locations. • Read identifier mode: reads return manufacturer and device identifier data, block lock status, and protection register data. Identifier information can be accessed starting at a 4-Mbit partition base addresses; the flash memory array is not accessible in read identifier mode. • Read query mode: reads return the flash device CFI data. CFI information can be accessed starting at a 4-Mbit partition base addresses; the flash memory array is not accessible in read query mode. • Read status register mode: reads return status register data from the addressed partition. The array data for that partition is not accessible. A system processor can check the status register to determine the state of an addressed partition, or to monitor program and erase progress. All partitions support the synchronous burst mode that internally sequences addresses with respect to the input CLK to select and supply data to the outputs. Datasheet 48 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) Identifier codes, query data, and status register read operations execute as singlesynchronous or asynchronous read cycles. WAIT is asserted during these reads. Access to the modes listed above is independent of VPP. An appropriate CUI command places the flash device in a read mode. At initial power-up or after reset, the flash device defaults to asynchronous read-array mode. Asserting CE# enables flash device read operations. The flash device internally decodes upper address inputs to determine which partition is accessed. • Asserting ADV# opens the internal address latches. • Asserting OE# activates the outputs, and gates the selected data onto the I/O bus. • In asynchronous mode, the address is latched when ADV# is deasserted (when the flash device is configured to use ADV#). • In synchronous mode, the address is latched by either the rising edge of ADV# or the rising (or falling) CLK edge while ADV# remains asserted, whichever occurs first. WE# and RST# must be deasserted during read operations. Note: If only asynchronous reads are to be performed in your system, CLK must be tied to a valid VIH level, the WAIT signal can be floated, and ADV# must be tied to ground. 9.1.2 Burst Suspend The Burst Suspend feature allows the system to temporarily suspend a synchronous burst operation if the system needs to use the flash device address and data bus for other purposes. Burst accesses can be suspended during the initial latency (before data is received) or after the flash device has output data. When a burst access is suspended, internal array sensing continues and any previously latched internal data is retained. Burst Suspend occurs when CE# is asserted, the current address has been latched (either ADV# rising edge or valid CLK edge), CLK is halted, and OE# is deasserted. CLK can be halted when it is at VIH or VIL. To resume the burst access, OE# is reasserted and CLK is restarted. Subsequent CLK edges resume the burst sequence where it left off. Within the flash device, CE# gates the WAIT signal. Therefore, during Burst Suspend, WAIT remains asserted and does not revert to a high-impedance state when OE# is deasserted. This WAIT state can cause contention with another flash device attempting to control the system READY signal during a Burst Suspend. System using the Burst Suspend feature must not connect the flash device WAIT signal directly to the system READY signal. Refer to Figure 15, “Burst Suspend” on page 38. 9.1.3 Standby De-asserting CE# deselects the flash device and places it in standby mode, substantially reducing flash device power consumption. In standby mode, outputs are placed in a high-impedance state independent of OE#. If deselected during a program or erase algorithm, the flash device consumes active power until the program or erase operation completes. November 2007 Order Number: 290702-13 Datasheet 49 Numonyx™ Numonyx™ Wireless Flash Memory (W30) 9.1.4 Reset The flash device enters a reset mode when RST# is asserted. In reset mode, internal circuitry is turned off and outputs are placed in a high-impedance state. After returning from reset, a time tPHQV is required until outputs are valid, and a delay (tPHWV) is required before a write sequence can be initiated. After this wake-up interval, normal operation is restored. The flash device defaults to read-array mode, the status register is set to 80h, and the Read Configuration Register defaults to asynchronous page-mode reads. If RST# is asserted during an erase or program operation, the operation aborts and the memory contents at the aborted block or address are invalid. See Figure 21, “Reset Operations Waveforms” on page 46 for detailed information regarding reset timings. As on any automated device, RST# must be asserted during system reset. When the system comes out of reset, the processor expects to read from the flash memory array. Automated flash memory devices provide status information when read during program or erase operations. If a CPU reset occurs with no flash memory reset, the CPU might not be properly initialized, because the flash memory device might be providing status information instead of array data. 1.8 Volt Numonyx Flash memory devices allow proper CPU initialization following a system reset through the use of the RST# input. In this application, RST# is controlled by the same CPU reset signal, RESET#. 9.1.5 Write A write occurs when CE# and WE# are asserted and OE# is deasserted. Flash memory control commands are written to the CUI using standard microprocessor write timings. Proper use of the ADV# input is needed for proper latching of the addresses. Refer to Section 7.3, “AC Write Characteristics” on page 38 for details. The address and data are latched on the rising edge of WE#. Write operations are asynchronous; CLK is ignored (but can be kept active/toggling). The CUI does not occupy an addressable memory location within any partition. The system processor must access it at the correct address range, depending on the kind of command executed. Programming or erasing can occur in only one partition at a time. Other partitions must be in one of the read modes or erase suspend mode. Table 18, “Command Codes and Descriptions” on page 51 shows the available commands. Appendix A, “Write State Machine” on page 86 provides information about moving between different operating modes using CUI commands. 9.2 Flash Device Commands The flash device on-chip WSM manages erase and program algorithms. This local CPU (WSM) controls the flash device in-system read, program, and erase operations. Bus cycles to or from the flash memory device conform to standard microprocessor bus cycles. The RST#, CE#, OE#, WE#, and ADV# control signals dictate data flow into and out of the flash device. WAIT informs the CPU of valid data during burst reads. Table 17, “Bus Operations Summary” on page 48 summarizes bus operations. To select flash device operations, write specific commands into the flash device CUI. Table 18, “Command Codes and Descriptions” on page 51 lists all possible command codes and descriptions. Table 19, “Bus Cycle Definitions” on page 52 lists command definitions. Because commands are partition-specific, you must issue write commands within the target address range. Datasheet 50 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) Table 18: Command Codes and Descriptions (Sheet 1 of 2) Operation Code FFh 70h Flash Device Command Read Array Read Status Register Read Identifier Description Places the selected partition in read-array mode. Places the selected partition in status register read mode. The partition enters this mode after a Program or Erase command is issued to it. Places the selected partition in read identifier mode. Flash device reads from partition addresses output the manufacturer/device codes, configuration register data, block lock status, or protection register data on D[15:0]. Places the addressed partition in read query mode. Flash device reads from the partition addresses output the CFI information on D[7:0]. The WSM can set the block lock (SR[1]), VPP (SR[3]), program (SR[4]), and erase (SR[5]) status bits of the status register, but WSM cannot clear these bits. SR[5:3,1] can be cleared only by a flash device reset or through the Clear Status Register command. The first cycle of this preferred program command prepares the CUI for a program operation. • The second cycle latches the address and data, and executes the WSM program algorithm at this location. Status register updates occur when CE# or OE# is toggled. After programming, use a Read Array command to read the array data. Equivalent to a Program Setup command (40h). This program command activates EFP mode. • The first write cycle sets up the command. • If the second cycle is an EFP Confirm command (D0h), subsequent writes provide program data. All other commands are ignored after EFP mode begins. If the first command was EFP Setup (30h), the CUI latches the address and data, and prepares the flash device for EFP mode. This command prepares the CUI for Block Erase. The flash device erases the block that the Erase Confirm command addresses. If the next command is not Erase Confirm, the CUI sets status register bits SR[5:4] to indicate a command sequence error, and places the partition in the read status register mode. If the first command was Erase Setup (20h), the CUI latches the address and data, and erases the block indicated by the erase confirm cycle address. During program or erase, the partition responds only to Read Status Register, Program Suspend, and Erase Suspend commands. CE# or OE# toggle updates the status register data. This command, issued at any flash device address, suspends the currently executing program or erase operation. Status register data indicates that the operation was successfully suspended if SR[2] (program suspend) or SR[6] (erase suspend) and SR[7] are set. The WSM remains in the suspended state regardless of the control signal states (except RST#). This command, issued at any flash device address, resumes the suspended program or erase operation. This command prepares the CUI lock configuration. If the next command is not Lock Block, Unlock Block, or Lock-Down, the CUI sets SR[5:4] to indicate a command sequence error. If the previous command was Lock Setup (60h), the CUI locks the addressed block. If the previous command was Lock Setup (60h), the CUI latches the address and unlocks the addressed block. If previously locked-down, the operation has no effect. If the previous command was Lock Setup (60h), the CUI latches the address and locks-down the addressed block. • 90h Read 98h Read Query 50h Clear Status Register 40h Word Program Setup Program 10h Alternate Setup 30h EFP Setup D0h EFP Confirm 20h Erase D0h Erase Setup Erase Confirm B0h Suspend D0h Program Suspend or Erase Suspend Suspend Resume Lock Setup 60h 01h Block Locking D0h Lock Block Unlock Block 2Fh Lock-Down November 2007 Order Number: 290702-13 Datasheet 51 Numonyx™ Numonyx™ Wireless Flash Memory (W30) Table 18: Command Codes and Descriptions (Sheet 2 of 2) Operation Code Flash Device Command Protection Program Setup Description This command prepares the CUI for a protection register program operation. The second cycle latches address and data, and starts the WSM protection register program or lock algorithm. Toggling CE# or OE# updates the flash device status register data. To read array data after programming, issue a Read Array command. This command prepares the CUI for flash device configuration. If Set Configuration Register is not the next command, the CUI sets SR[5:4] to indicate a command sequence error. If the previous command was Configuration Setup (60h), the CUI latches the address and writes the data from A[15:0] into the configuration register. Subsequent read operations access the array data. Protection C0h 60h Configuration 03h Note: Configuration Setup Set Configuration Register Do not use unassigned commands. Numonyx reserves the right to redefine these codes for future functions. Table 19: Bus Cycle Definitions Operation Command Bus Cycles >1 >2 >2 2 1 2 2 >2 1 1 2 2 2 First Bus Cycle Oper Write Write Write Write Write Write Write Write Write Write Write Write Write Addr1 PnA PnA PnA PnA XX BA WA WA XX XX BA BA BA Data2,3 FFh 90h 98h 70h 50h 20h 40h/10h 30h B0h D0h 60h 60h 60h Write Write Write BA BA BA 01h D0h 2Fh Write Write Write BA WA WA D0h WD D0h Second Bus Cycle Oper Read Read Read Read Addr1 Read Address PBA+IA PBA+QA PnA Data 2,3 Array Data IC QD SRD Read Array/Reset Read Identifier Read Read Query Read Status Register Clear Status Register Block Erase Program and Erase Word Program EFP Program/Erase Suspend Program/Erase Resume Lock Block Lock Unlock Block Lock-Down Block Datasheet 52 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) Table 19: Bus Cycle Definitions Operation Command Protection Program Lock Protection Program Set Configuration Register Bus Cycles 2 2 2 First Bus Cycle Oper Write Write Write Addr1 PA LPA CD Data2,3 C0h C0h 60h Second Bus Cycle Oper Write Write Write Addr1 PA LPA CD Data2,3 PD FFFDh 03h Protection Configuration Notes: 1. First-cycle command addresses must be the same as the target address of the operation. Examples: —The first-cycle address for the Read Identifier command must be the same as the Identification code address (IA). —The first-cycle address for the Word Program command must be the same as the word address (WA) to be programmed. —The first-cycle address for the Erase/Program Suspend command must be the same as the address within the block to be suspended. XX= Any valid address within the flash device. IA= Identification code address. BA= Block Address. Any address within a specific block. LPA= The Lock Protection Address is obtained from the CFI (through the Read Query command). The W30 flash memory device family LPA is at 0080h. PA= User programmable 4-word protection address. PnA= Any address within a specific partition. PBA= Partition Base Address. The first address of a particular partition. QA= Query code address. WA= Word address of memory location to be written. 2. SRD= Status register data. WD= Data to be written at location WA. IC= Identifier code data. PD= User programmable 4-word protection data. QD= Query code data on D[7:0]. CD= Configuration register code data presented on flash device addresses A[15:0]. A[MAX:16] address bits can select any partition. See Table 27, “Read Configuration Register Definitions” on page 79 for configuration register bits descriptions. 3. Do not use commands other than those shown above. Other commands are reserved by Numonyx for future flash device implementations. 9.3 Command Sequencing When issuing a 2-cycle write sequence to the flash device, a read operation can occur between the two write cycles. The setup phase of a 2-cycle write sequence places the addressed partition into read-status mode, so if the same partition is read before the second confirm write cycle is issued, status register data is returned. Reads from other partitions, however, can return actual array data, if the addressed partition is already in read-array mode. Figure 25 and Figure 26 illustrate these two conditions. Figure 25: Normal Write and Read Cycles A ddress [A] WE# [W] OE# [G] Data [Q] Partition A Partition A Partition A 20h Block Erase Setup D0h Block Erase Conf irm FFh Read Array November 2007 Order Number: 290702-13 Datasheet 53 Numonyx™ Numonyx™ Wireless Flash Memory (W30) Figure 26: Interleaving a 2-Cycle Write Sequence with an Array Read A ddress [A] WE# [W] OE# [G] Data [Q] Partition B Partition A Partition B Partition A FFh Read Array 20h Erase Setup A rray Data Bus Read D0h Erase Conf irm By contrast, a write bus cycle must not interrupt a 2-cycle write sequence. Such an interruption causes a command sequence error to appear in the status register. Figure 27 illustrates a command sequence error. Figure 27: Improper Command Sequencing A ddress [A] WE# [W] OE# [G] Data [D/Q] Partiti on X Partitio n Y Parti tion X Partition X 20h FFh D0h SR Data Datasheet 54 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) 10.0 10.1 Read Operations Read Array The Read Array command places (or resets) the partition in read-array mode and is used to read data from the flash memory array. Upon initial flash device power-up, or after reset (RST# transitions from VIL to VIH), all partitions default to asynchronous read-array mode. To read array data from the flash device: 1. Write the Read Array command (FFh) to the CUI and specify the desired word address. 1. Read from that address. Note: If a partition is already in read-array mode, you do not need to issue the Read Array command to read from that partition. If the Read Array command is written to a partition that is erasing or programming, the flash device presents invalid data on the bus until the program or erase operation completes. After the program or erase finishes in that partition, valid array data can then be read. If an Erase Suspend or Program Suspend command suspends the WSM, a subsequent Read Array command places the addressed partition in read-array mode. The Read Array command functions independently of VPP. 10.2 Read Device ID The read identifier mode outputs the manufacturer/device identifier, block lock status, protection register codes, and configuration register data. The identifier information is contained within a separate memory space on the flash device, and can be accessed along the 4-Mbit partition address range supplied by the Read Identifier command (90h) address. Reads from addresses in Table 20 retrieve ID information. Issuing a Read Identifier command to a partition that is programming or erasing places the outputs of that partition in read ID mode while the partition continues to program or erase in the background. Table 20: Flash Device Identification Codes (Sheet 1 of 2) Address1 Item Base Manufacturer ID Partition Offset 00h 0089h 8852h 8853h Device ID Partition 01h 8854h 8855h 8856h 8857h Block Lock Status (2) Block 02h D0 = 0 D0 = 1 Numonyx 32-Mbit TPD 32-Mbit BPD 64-Mbit TPD 64-Mbit BPD 128-Mbit TPD 128-Mbit BPD Block is unlocked Block is locked Data Description November 2007 Order Number: 290702-13 Datasheet 55 Numonyx™ Numonyx™ Wireless Flash Memory (W30) Table 20: Flash Device Identification Codes (Sheet 2 of 2) Address1 Item Base Block Lock-Down Status(2) Configuration Register Protection Register Lock Status Protection Register Block Partition Partition Partition Offset 02h 05h 80h 81h - 88h D1 = 0 D1 = 1 Register Data Lock Data Register Data Multiple reads required to read the entire 128-bit Protection Register. Block is not locked-down Block is locked down Data Description Notes: 1. The address is constructed from a base address plus an offset. For example, to read the Block Lock Status for block number 38 in a BPD, set the address to the BBA (0F8000h) plus the offset (02h), which in this example is 0F8002h. Then examine bit 0 of the data to determine whether the block is locked. 2. See Section 13.1.4, “Block Lock Status” on page 73 for valid lock status. 10.3 Read Query (CFI) The W30 flash memory device contains a separate CFI query database that acts as an on-chip datasheet. To access the CFI information within the W30 flash memory device, issue the Read Query command and supply a specific address. The address is constructed from the base address of a partition plus a particular offset corresponding to the desired CFI field. Appendix B, “Common Flash Interface” on page 89 shows accessible CFI fields and their address offsets. Issuing the Read Query command to a partition that is programming or erasing puts that partition in read query mode while the partition continues to program or erase in the background. 10.4 Read Status Register The flash device status register displays program and erase operation status. The status of a partition can be read after writing the Read Status Register command to any location within the address range of that partition. Read-status mode is the default read mode following a Program, Erase, or Lock Block command sequence. Subsequent single reads from that partition return the partition status until another valid command is written. The read-status mode supports single synchronous and single asynchronous reads only; it does not support burst reads. The first falling edge of OE# or CE# latches and updates Status Register data. The operation does not affect the modes of other partitions. Because the Status Register is 8 bits wide, only DQ [7:0] contain valid status register data; DQ [15:8] contain zeros. See Table 21, “Status Register Definitions” on page 57 and Table 22, “Status Register Descriptions” on page 57. Each 4-Mbit partition contains its own status register. Bits SR[6:0] are unique to each partition, but SR[7], the Device WSM Status (DWS) bit, pertains to the entire flash memory device. SR[7] provides the program and erase status of the entire flash device. By contrast, the Partition WSM Status (PWS) bit, SR[0], provides program and erase status of the addressed partition only. Status register bits SR[6:1] present information about partition-specific program, erase, suspend, VPP, and block-lock states. Table 23, “Status Register Device WSM and Partition Write Status Description” on page 57 describes the DWS (SR[7]) and PWS (SR[0]) combinations. Datasheet 56 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) Table 21: Status Register Definitions DWS 7 ESS 6 ES 5 PS 4 VPPS 3 PSS 2 DPS 1 PWS 0 Table 22: Status Register Descriptions Bit Name State • Description SR[7] indicates erase or program completion in the flash device. • SR[6:1] are invalid while SR[7] = 0. See Table 23 for valid SR[7] and SR[0] combinations. After issuing an Erase Suspend command, the WSM halts and sets SR[7] and SR[6]. SR[6] remains set until the flash device receives an Erase Resume command. • • SR[5] is set if an attempted erase failed. A Command Sequence Error is indicated when SR[7,5:4] are set. 7 DWS Device WSM Status 0 = Device WSM is Busy 1 = Device WSM is Ready 6 ESS Erase Suspend Status ES Erase Status PS Program Status VPPS VPP Status PSS Program Suspend Status DPS Device Protect Status 0 = Erase in progress/completed 1 = Erase suspended 0 = Erase successful 1 = Erase error 0 = Program successful 1 = Program error 0 = VPP OK 1 = VPP low detect, operation aborted 0 = Program in progress/completed 1 = Program suspended 0 = Unlocked 1 = Aborted erase/program attempt on a locked block 0 = This partition is busy, but only if SR[7]=0 1 = Another partition is busy, but only if SR[7]=0 5 4 SR[4] is set if the WSM failed to program a word. The WSM indicates the VPP level after program or erase completes. SR[3] does not provide continuous VPP feedback and is not guaranteed when VPP≠VPPL/VPPH After receiving a Program Suspend command, the WSM halts execution and sets SR[7] and SR[2]. These bits remain set until a Resume command is received. If an erase or program operation is attempted to a locked block (if WP# = VIL), the WSM sets SR[1] and aborts the operation. The addressed partition is erasing or programming. In EFP mode, SR[0] indicates that a data-stream word has finished programming or verifying, depending on the particular EFP phase. See Table 23 for valid SR[7] and SR[0] combinations. 3 2 1 0 PWS Partition Write Status Table 23: Status Register Device WSM and Partition Write Status Description DWS (SR[7]) 0 0 PWS (SR[0]) 0 1 Description The addressed partition is performing a program/erase operation. EFP: the flash device has finished programming or verifying data, or is ready for data. A partition other than the one currently addressed is performing a program/erase operation. EFP: the flash device is either programming or verifying data. No program/erase operation is in progress in any partition. Erase and Program suspend bits (SR[6,2]) indicate whether other partitions are suspended. EFP: the flash device has exited EFP mode. Does not occur in standard program or erase modes. EFP: this combination does not occur. 1 0 1 1 November 2007 Order Number: 290702-13 Datasheet 57 Numonyx™ Numonyx™ Wireless Flash Memory (W30) 10.5 Clear Status Register The Clear Status Register command clears the status register and leaves all partition output states unchanged. The WSM can set all status register bits and clear bits SR[7:6,2,0]. Because bits SR[5,4,3,1] indicate various error conditions, they can be cleared only by the Clear Status Register command. By allowing system software to reset these bits, several operations (such as cumulatively programming several addresses or erasing multiple blocks in sequence) can be performed before reading the status register to determine whether an error occurred. If an error is detected, the Status Register must be cleared before beginning another command or sequence. Flash device reset (RST# = VIL ) also clears the status register. This command functions independently of VPP. Datasheet 58 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) 11.0 11.1 Program Operations Word Program When the Word Program command is issued, the WSM executes a sequence of internally timed events to program a word at the desired address, and to verify that the bits are sufficiently programmed. Programming the flash memory array changes specifically addressed bits to 0; 1 bits do not change the memory cell contents. Programming can occur in only one partition at a time. All other partitions must be in either a read mode or erase suspend mode. Only one partition can be in erase suspend mode at a time. To examine the status register can be examined for program progress, read any address within the partition that is busy programming. However, while most status register bits are partition-specific, the Device WSM Status bit, SR[7], is device-specific. That is, if the status register is read from any other partition, SR[7] indicates the program status of the entire flash memory device. This status bit permits the system CPU to monitor the program progress while reading the status of other partitions. CE# or OE# toggle (during polling) updates the status register. Several commands can be issued to a partition that is programming: Read Status Register, Program Suspend, Read Identifier, and Read Query. The Read Array command can also be issued, but the read data is indeterminate. After programming completes, three status register bits can signify various possible error conditions: • SR[4] indicates a program failure if set. • If SR[3] is set, the WSM could not execute the Word Program command, because VPP was outside the acceptable limits. • If SR[1] is set, the program was aborted, because the WSM attempted to program a locked block. After the status register data is examined, clear it using the Clear Status Register command before issuing a new command. The partition remains in status register mode until another command is written to that partition. Any command can be issued after the status register indicates program completion. If CE# is deasserted while the flash device is programming, the flash devices do not enter standby mode until the program operation completes. November 2007 Order Number: 290702-13 Datasheet 59 Numonyx™ Numonyx™ Wireless Flash Memory (W30) Figure 28: Word Program Flowchart WORD PROGRAM PROCEDURE Start Bus Command Operation Write Program Setup Data Comments Data = 40h Addr = Location to program (WA) Data = Data to program (WD) Addr = Location to program (WA) Read SRD Toggle CE# or OE# to update SRD Check SR[7] 1 = WSM ready 0 = WSM busy Write 40h, Word Address Write Data Word Address Write Read Read Status Register No Suspend Program Loop 0 Standby SR[7] = 1 Suspend Program Yes Repeat for subsequent programming operations. Full status register check can be done after each program or after a sequence of program operations. Full Program Status Check (if desired) Program Complete FULL PROGRAM STATUS CHECK PROCEDURE Read Status Register Bus Command Operation Standby SR[3] = 0 1 1 Comments Check SR[3] 1 = VPP error Check SR[4] 1 = Data program error Check SR[1] 1 = Attempted program to locked block Program aborted VPP Range Error Standby Program Error SR[4] = 0 Standby SR[1] = 0 1 Device Protect Error SR[3] MUST be cleared before the WSM will allow further program attempts Only the Clear Staus Register command clears SR[4:3,1]. If an error is detected, clear the status register before attempting a program retry or other error recovery. Program Successful 11.2 Factory Programming The standard factory programming mode uses the same commands and algorithm as the Word Program mode (40h/10h). When VPP is at VPPL, program and erase currents are drawn through VCC. If VPP is driven by a logic signal, VPPL must remain above the VPPLMin value to perform in-system flash memory modifications. When VPP is connected to a 12 V power supply, the flash device draws program and erase current directly from VPP, which eliminates the need for an external switching transistor to control the VPP voltage. Datasheet 60 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) Figure 37, “Examples of VPP Power Supply Configurations” on page 78 shows examples of flash device power supply usage in various configurations. The 12-V VPP mode enhances programming performance during the short time period typically found in manufacturing processes. However, this mode is not intended for extended use.12 V can be applied to VPP during program and erase operations as specified in Section 5.2, “Operating Conditions” on page 24. VPP can be connected to 12 V for a total of tPPH hours maximum. Stressing the flash device beyond these limits might cause permanent damage. 11.3 Enhanced Factory Program (EFP) EFP substantially improves flash device programming performance through a number of enhancements to the conventional 12-Volt word program algorithm. The more efficient WSM algorithm in EFP eliminates the traditional overhead delays of the conventional word program mode in both the host programming system and the flash device. Changes to the conventional word programming flowchart and internal WSM routine were developed because of today's beat-rate-sensitive manufacturing environments; a balance between programming speed and cycling performance was attained. The host programmer writes data to the flash device and checks the Status Register to determine when the data has completed programming. This modification cuts write bus cycles approximately in half. • Following each internal program pulse, the WSM increments the flash device address to the next physical location. • Programming equipment can then sequentially stream program data throughout an entire block without having to setup and present each new address. In combination, these enhancements reduce much of the host programmer overhead, enabling more of a data streaming approach to flash device programming. EFP further speeds up programming by performing internal code verification. With this feature, PROM programmers can rely on the flash device to verify that it has been programmed properly. From the flash device side, EFP streamlines internal overhead by eliminating the delays previously associated with switching voltages between programming and verify levels at each memory-word location. EFP consists of four phases: setup, program, verify, and exit. Refer to Figure 29, “Enhanced Factory Program Flowchart” on page 64 for a detailed graphical representation of how to implement EFP. 11.3.1 EFP Requirements and Considerations Table 24: EFP Requirements and Considerations EFP Requirements Ambient temperature: TA = 25 °C ±5 °C VCC within specified operating range VPP within specified VPPH range Target block unlocked 1. 2. EFP Considerations Block cycling below 100 erase cycles RWW not supported2 EFP programs one block at a time EFP cannot be suspended 1 Recommended for optimum performance. Some degradation in performance might occur if this limit is exceeded, but the internal algorithm will continue to work properly. Code or data cannot be read from another partition during EFP. November 2007 Order Number: 290702-13 Datasheet 61 Numonyx™ Numonyx™ Wireless Flash Memory (W30) 11.3.2 Setup After receiving the EFP Setup (30h) and EFP Confirm (D0h) command sequence, SR[7] transitions from a 1 to a 0, indicating that the WSM is busy with EFP algorithm startup. A delay before checking SR[7] is required to allow the WSM time to perform all of its setups and checks (VPP level and block lock status). If an error is detected, status register bits SR[4], SR[3], and/or SR[1] are set, and the EFP operation terminates. Note: After the EFP Setup and Confirm command sequence, reads from the flash device automatically output status register data. Do not issue the Read Status Register command, because this command is interpreted as data to program at WA0. 11.3.3 Program After setup completion, the host programming system must check SR[0] to determine the data-stream ready status (SR[0]=0). Each subsequent write after this check is a program-data write to the flash memory array. Each cell within the memory word to be programmed to 0 receives one WSM pulse; additional pulses, if required, occur in the verify phase. SR[0]=1 indicates that the WSM is busy applying the program pulse. The host programmer must poll the flash device status register for the program done state after each data-stream write. SR[0]=0 indicates that the appropriate cell(s) within the accessed memory location have received their single WSM program pulse, and that the flash device is ready for the next word. Although the host can check full status for errors at any time, this check is necessary only on a block basis, after EFP exit. Addresses must remain within the target block. Supplying an address outside of the target block immediately terminates the program phase; the WSM then enters the EFP verify phase. The address can either remain constant or increment. The flash device compares the incoming address to the address stored from the setup phase (WA0). • If the addresses match, the WSM programs the new data word at the next sequential memory location. • If the addresses differ, the WSM jumps to the new address location. The program phase concludes when the host programming system writes to a different block address. The data supplied must be FFFFh. Upon program phase completion, the flash device enters the EFP verify phase. 11.3.4 Verify A high percentage of the flash memory bits program on the first WSM pulse. However, EFP internal verification identifies cells that do not completely program on their first attempt, and applies additional pulses as required. The verify phase is identical in flow to the program phase, except that instead of programming incoming data, the WSM compares the verify-stream data to the data that was previously programmed into the block. • If the data compares correctly, the host programmer proceeds to the next word. • If the data does not match, the host waits while the WSM applies one or more additional pulses. Datasheet 62 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) The host programmer must reset its initial verify-word address to the same starting location supplied during the program phase. It then reissues each data word in the same order as during the program phase. Like programming, the host can write each subsequent data word to WA0 or it can increment through the block addresses. The verification phase concludes when the interfacing programmer writes to a different block address. The data supplied must be FFFFh. Upon completion of the verify phase, the flash device enters the EFP exit phase. 11.3.5 Exit SR[7]=1 indicates that the flash device has returned to normal operating conditions. Perform a full status check at this time, to verify that the entire block programmed successfully. After EFP exit, any valid CUI command can be issued. November 2007 Order Number: 290702-13 Datasheet 63 Numonyx™ Numonyx™ Wireless Flash Memory (W30) Figure 29: Enhanced Factory Program Flowchart ENHANCED FACTORY PROGRAMMING PROCEDURE EFP Setup Start EFP Program Read Status Register EFP Verify Read Status Register EFP Exit Read Status Register VPP = 1 2V Unlock Block SR[0]=1=N Data Stream Ready? SR[0] =0=Y Write Data Address = WA0 SR[0]=1=N Verify Stream Ready? SR[0] =0=Y Write Data Address = WA0 SR[7]=0=N EFP Exited? SR[7]=1=Y Full Status Check Procedure Write 30h Address = WA0 Write D0h Address = WA0 S R [0 ] = 1 = N EFP setup time S R [7 ] = 0 = Y Read Status Register Program Done? SR[0]=0=Y S R [0 ] = 1 = N Read Status Register Read Status Register Operation Complete Verify Done? SR[0]=0=Y EFP Setup Done? SR[7]=1=N Check VPP & L ock errors (SR[3,1]) N Last Data? Y Write FFFFh Address ≠ BBA N Last Data? Y Write FFFFh Address ≠ BBA Exit EFP Setup Bus State Write Write Write Standby Read Standby EFP Setup Done? Unlock Block EFP Setup Comments VPP = 1 2V Unlock block Data = 30h Address = WA0 Bus State Read EFP Program Comments Status Register Bus State Read EFP Verify Comments Status Register Data Check SR[0] Standby Stream 0 = Ready for data Ready? 1 = Not ready for data Write (note 1) Read Data = Data to program Address = WA0 Status Register Verify Check SR[0] Standby Stream 0 = Ready for verify Ready? 1 = Not ready for verify Write (note 2) Read Standby (note 3) Standby Verify Done? Last Data? Exit Verify Phase Data = Word to verify Address = WA0 Status Register Check SR[0] 0 = Verify done 1 = Verify not done Device automatically increments address. Data = FFFFh Address not within same BBA EFP Data = D0h Confirm Address = WA0 EFP setup time Status Register Check SR[7] 0 = EFP ready 1 = EFP not ready Check SR[0] Program Standby 0 = Program done Done? 1 = Program not done Standby Last Data? Device automatically increments address. If SR[7] = 1: Error Check SR[3,1] Standby Condition SR[3] = 1 = VPP e rror Check SR[1] = 1 = locked block Write Exit Data = FFFFh Program Address not within same Phase BBA Write EFP Exit 1. WA0 = first Word Address to be programmed within the target block. The BBA (Block Base Read Status Register Address) must remain constant throughout the program phase data stream; WA can be held Check SR[7] constant at the first address location, or it can be written to sequence up through the addresses EFP 0 = Exit not finished Standby within the block. Writing to a BBA not equal to that of the block currently being written to Exited? 1 = Exit completed terminates the EFP program phase, and instructs the device to enter the EFP verify phase. 2. For proper verification to occur the verify data stream must be presented to the device in the , Repeat for subsequent operations. same sequence as that of the program phase data stream. Writing to a BBA not equal to WA After EFP exit, a Full Status Check can terminates the EFP verify phase, and instructs the device to exit EFP . determine if any program error occurred. 3. Bits that did not fully program with the single WSM pulse of the EFP program phase receive additional program-pulse attempts during the EFP verify phase. The device will report any program failure by setting SR[4]=1; this check can be performed during the full status check afterSee the Full Status Check procedure in the Word Program flowchart. EFP has been exited for that block, and will indicate any error within the entire data stream. Datasheet 64 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) 12.0 12.1 Program and Erase Operations Program/Erase Suspend and Resume The Program Suspend and Erase Suspend commands halt an in-progress program or erase operation. The command can be issued at any flash device address. The partition corresponding to the address of the command remains in its previous state. A suspend command allows data to be accessed from memory locations other than the location being programmed or the block being erased. • A program operation can be suspended only to perform a read operation. • An erase operation can be suspended to perform either a program or a read operation within any block, except the block that is erase suspended. • A program command nested within a suspended erase can subsequently be suspended to read yet another location. Once a program or erase process starts, the Suspend command requests that the WSM suspends the program or erase sequence at predetermined points in the algorithm. The partition that is actually suspended continues to output status register data after the Suspend command is written. An operation is suspended when status bits SR[7] and SR[6] and/or SR[2] are set. To read data from blocks within the partition (other than an erase-suspended block), write a Read Array command. Block erase cannot resume until the program operations initiated during erase suspend are complete. • Read Array, Read Status Register, Read Identifier (ID), Read Query, and Program Resume are valid commands during Program or Erase Suspend. • Additionally, Clear Status Register, Program, Program Suspend, Erase Resume, Lock Block, Unlock Block, and Lock-Down Block are valid commands during erase suspend. To read data from a block in a partition that is not programming or erasing, the operation does not need to be suspended. • If the other partition is already in read array, ID, or Query mode, issuing a valid address returns corresponding data. • If the other partition is not in a read mode, one of the read commands must be issued to the partition before data can be read. During a suspend, CE# = VIH places the flash device in standby state, which reduces active current. VPP must remain at its program level and WP# must remain unchanged while in suspend mode. A resume command instructs the WSM to continue programming or erasing, and clears status register bits SR[2] (or SR[6]) and SR[7]. The Resume command can be written to any partition. When read at the partition that is programming or erasing, the flash device outputs data corresponding to the last mode for that partition. If the status register error bits are set, the status register can be cleared before issuing the next instruction. RST# must remain at VIH. See Figure 30, “Program Suspend / Resume Flowchart” on page 66, and Figure 31, “Erase Suspend / Resume Flowchart” on page 67. If a suspended partition was placed in Read Array, Read Status Register, Read Identifier (ID), or Read Query during the suspend, the flash device remains in that mode, and outputs data corresponding to that mode after the program or erase operation resumes. November 2007 Order Number: 290702-13 Datasheet 65 Numonyx™ Numonyx™ Wireless Flash Memory (W30) After resuming a suspended operation, issue the read command appropriate to the read operation. To read status after resuming a suspended operation, issue a Read Status Register command (70h) to return the suspended partition to status mode. Figure 30: Program Suspend / Resume Flowchart PROGRAM SUSPEND / RESUME PROCEDURE Start Bus Command Operation Write Comments Write B0h Any Address Write 70h Same Partition Read Status Register Data = B0h Program Addr = Any address within programming Suspend partition Read Status Data = 70h Addr = Any address in same partition Read SRD Toggle CE# or OE# to update SRD Addr = Any address in same partition Check SR[7] 1 = WSM ready 0 = WSM busy Check SR[2] 1 = Program suspended 0 = Program completed Read Array Data = FFh Addr = Any device address (except word being programmed) Read array data from block other than the one being programmed Program Resume Data = D0h Addr = any device address Write Read SR[7] = 1 0 Standby SR[2] = 1 0 Program Completed Standby Write Write FFh Susp Partition Read Read Array Data Write No Done Reading Yes If the suspended partition was placed in Read Array mode: Write Write FFh Pgm'd Partition Read Array Data Read Status Return partition to status mode: Data = 70h Addr = address within same partition Write D0h Any Address Program Resumed Write 70h Same Partition Datasheet 66 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) Figure 31: Erase Suspend / Resume Flowchart ERASE SUSPEND / RESUME PROCEDURE Start Bus Command Operation Write Erase Suspend Read Status Comments Data = B0h Addr = Any address Data = 70h Addr = Any address in same partition Read SRD Toggle CE# or OE# to update SRD Addr = Any address in same partition Check SR[7] 1 = WSM ready 0 = WSM busy Check SR[6] 1 = Erase suspended 0 = Erase completed Data = FFh or 40h Read Array Addr = Any device address (except or Program block being erased) Read array or program data from/to block other than the one being erased Erase Resume Data = D0h Addr = Any address Write B0h Any Address Write 70h Same Partition Write Read Read Status Register Standby SR[7] = 1 0 0 Standby Erase Completed Write Read or Write Write SR[6] = 1 Read Read or Program? No Program Read Array Data Program Loop Done? Yes If the suspended partition was placed in Read Array mode or a Program Loop: Write Read Status Return partition to status mode: Data = 70h Addr = Address within same partition Write D0h Any Address Write FFh Erased Partition Read Array Data Erase Resumed Write 70h Same Partition 12.2 Block Erase The 2-cycle block erase command sequence, consisting of Erase Setup (20h) and Erase Confirm (D0h), initiates one block erase at the addressed block. Only one partition can be in an erase mode at a time; other partitions must be in a read mode. The Erase Confirm command internally latches the address of the block to erase. Erase forces all bits within the block to 1. SR[7] is cleared while the erase executes. After writing the Erase Confirm command, the selected partition is placed in read status register mode. Reads performed to that partition return the current status data. The address given during the Erase Confirm command does not need to be the same November 2007 Order Number: 290702-13 Datasheet 67 Numonyx™ Numonyx™ Wireless Flash Memory (W30) address used in the Erase Setup command. For example, if the Erase Confirm command is given to partition B, then the selected block in partition B is erased, even if the Erase Setup command was to partition A. The 2-cycle erase sequence cannot be interrupted with a bus write operation. For example, to execute properly, an Erase Setup command must be immediately followed by the Erase Confirm command. If a different command is issued between the setup and confirm commands, the following occurs: • The partition is placed in read-status mode. • The status register signals a command sequence error. • All subsequent erase commands to that partition are ignored until the status register is cleared. To detect block erase completion, the CPU analyzes SR[7] of that partition. If an error bit command before attempting the next operation. The partition remains in read-status mode until another command is written to its CUI. Any CUI instruction can follow after erasing completes. The CUI can be set to read-array mode to prevent inadvertent status register reads. (SR[5,3,1]) was flagged, the status register can be cleared by issuing the Clear Status Register Datasheet 68 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) Figure 32: Block Erase Flowchart BLOCK ERASE PROCEDURE Start Bus Command Comments Operation Block Data = 20h Erase Write Addr = Block to be erased (BA) Setup Write Write D0h and Block Address Read Read Status Register No Write 20h Block Address Erase Confirm Data = D0h Addr = Block to be erased (BA) Read SRD Toggle CE# or OE# to update SRD Check SR[7] 1 = WSM ready 0 = WSM busy Suspend Erase Loop 0 Standby SR[7] = 1 Suspend Erase Yes Repeat for subsequent block erasures. Full status register check can be done after each block erase or after a sequence of block erasures. Full Erase Status Check (if desired) Block Erase Complete FULL ERASE STATUS CHECK PROCEDURE Read Status Register 1 Bus Command Operation VPP Range Error Command Sequence Error Block Erase Error Erase of Locked Block Aborted Standby Standby Standby Standby Check SR[3] 1 = VPP error Comments SR[3] = 0 Check SR[5:4] Both 1 = Command sequence error Check SR[5] 1 = Block erase error SR[5:4] = 0 1 SR[5] = 0 1 SR[1] = 0 1 Check SR[1] 1 = Attempted erase of locked block Erase aborted SR[3,1] must be cleared before the WSM will allow further erase attempts. Only the Clear Status Register command clears SR[5:3,1]. If an error is detected, clear the Status register before attempting an erase retry or other error recovery. Block Erase Successful 12.3 Read-While-Write and Read-While-Erase The Product Name supports flexible multi-partition dual-operation architecture. By dividing the flash memory into many separate partitions, the flash device can read from one partition while programing (Read-While-Write) or erasing (Read-While-Eras) in another partition. Both of these features greatly enhance data storage performance. The W30 flash memory device does not support simultaneous program and erase operations. Attempting to perform operations such as these results in a command sequence error. Only one partition can be programming or erasing while another November 2007 Order Number: 290702-13 Datasheet 69 Numonyx™ Numonyx™ Wireless Flash Memory (W30) partition is reading. However, one partition can be in erase suspend mode while a second partition is performing a program operation, and yet another partition is executing a read command. Table 18, “Command Codes and Descriptions” on page 51 describes the command codes available for all functions. Datasheet 70 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) 13.0 Security Modes The W30 flash memory device offers both hardware and software security features to protect the flash memory data. • To use the software security feature, execute the Lock Block command. • To use the hardware security feature, execute the Lock-Down Block command and assert the WP# signal. Refer to Figure 33, “Block Locking State Diagram” on page 72 for a state diagram of the flash device security features. Also see Figure 34, “Locking Operations Flowchart” on page 75. 13.1 Block Lock Operations Individual instant block locking protects code and data by allowing any block to be locked or unlocked with no latency. This locking scheme offers two levels of protection: • Software-only control of block locking (useful for frequently changed data blocks). • Hardware interaction before locking can be changed (protects infrequently changed code blocks). The following sections discuss the locking system operation. The term state [abc] specifies locking states, such as state [001]. In this syntax: • a = WP# value. • b = block lock-down status bit D1. • c = Block Lock status register bit D0. Figure 33, “Block Locking State Diagram” on page 72 defines possible locking states. The following summarizes the locking functionality. • All blocks power-up in a locked state. • Unlock commands can unlock these blocks, and lock commands can lock them again. • The Lock-Down command locks a block and prevents it from being unlocked when WP# is asserted. — Locked-down blocks can be unlocked or locked with commands as long as WP# is deasserted. — When WP# is asserted, previously locked-down blocks return to lock-down. — The lock-down status bit clears only when the flash device is reset or powereddown. Block lock registers are not affected by the VPP level. These registers can be modified and read even if VPP < VPPLK. The locking status of each block can be set to locked, unlocked, and lock-down, as described in the following sections. See Figure 34, “Locking Operations Flowchart” on page 75. November 2007 Order Number: 290702-13 Datasheet 71 Numonyx™ Numonyx™ Wireless Flash Memory (W30) Figure 33: Block Locking State Diagram Power-Up/Reset Locked [X01] Locked Down 4,5 [011] Hardware Locked 5 [011] WP# Hardware Control Unlocked [X00] Software Locked [111] Unlocked [110 ] Software Block Lock (0x60/0x01) or Software Block Unlock (0x60/0xD0) Software Block Lock-Down (0x60/0x2F) WP# hardware control Notes: 1. [a,b,c] represents [WP#, D1, D0]. X = Don’t Care. 2. D1 indicates block Lock -down status. - D1 = 0, Lock -down has not been issued to this block . - D1 = 1, Lock -down has been issued to this block . 3. D0 indicates block lock status. - D0 = 0, block is unlocked. - D0 = 1, block is locked. 4. Locked-down = Hardware + Software locked. 5. [011] states should be tracked by system software to determine difference between Hardware Locked and Locked -Down states. B5070 13.1.1 Lock All blocks default to locked (state [x01]) after initial power-up or reset. Locked blocks are fully protected from alteration. Attempted program or erase operations to a locked block return an error in SR[1]. • To lock unlocked blocks, use the Lock Block command sequence. • To change the status of a locked block to unlocked or lock-down, use the appropriate software commands. 13.1.2 Unlock Unlocked blocks (states [x00] and [110]) can be programmed or erased. All unlocked blocks return to the locked state when the flash device is reset or powered-down. • To change the status of an unlocked block to the locked or locked-down state, use the appropriate software commands. • To unlock a locked block, write the Unlock Block command sequence if the block is not locked-down. 13.1.3 Lock-Down Locked-down blocks (state [011]) offer an additional level of write protection beyond the protection of a regular locked block. If a block is locked-down, the software cannot change the state of the block if WP# is asserted. Datasheet 72 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) • To lock-down a locked or unlocked block, write the Lock-Down Block command sequence. • If a block was set to locked-down, then later changed to unlocked, issue the Lockdown command before asserting WP#, to put that block back in the locked-down state. • When WP# is deasserted, locked-down blocks change to the locked state, and can then be unlocked using the Unlock Block command. 13.1.4 Block Lock Status The lock status of every block can be read in read identifier mode. Note: To enter this mode, issue the Read Identifier command to the flash device. Subsequent reads at BBA + 02h output the lock status of that block. For example, to read the block lock status of block 10, the address sent to the flash device must be 50002h (for a top-parameter device). The lowest two data bits of the read data, DQ1 and DQ0, represent the lock status. • DQ0 indicates the block lock status. This bit is set using the Lock Block command and cleared using the Block Unlock command. It is also set when entering the lockdown state. • DQ1 indicates lock-down status and is set using the Lock-Down command. The lock-down status bit cannot be cleared by software–only by a flash device reset or power-down. See Table 25. Table 25: Write Protection Truth Table VPP X VIL X X WP# X X VIL VIH RST# VIL VIH VIH VIH Device is inaccessible Word program and block erase are prohibited All lock-down blocks are locked All lock-down blocks can be unlocked Write Protection 13.1.5 Lock During Erase Suspend Block lock configurations can be performed during an erase suspend operation, using the standard locking command sequences to unlock, lock, or lock-down a block. This feature is useful when another block requires immediate updating. To change block locking during an erase operation: 1. Write the Erase Suspend command. 2. Check SR[6] to determine that the erase operation has suspended. 3. Write the desired lock command sequence to a block. The lock status changes. 4. After completing lock, unlock, read, or program operations, resume the erase operation with the Erase Resume command (D0h). If a block is locked or locked-down during a suspended erase of the same block, the locking status bits change immediately. When the erase operation resumes, it completes normally. November 2007 Order Number: 290702-13 Datasheet 73 Numonyx™ Numonyx™ Wireless Flash Memory (W30) Locking operations cannot occur during program suspend. Appendix A, “Write State Machine” on page 86 shows valid commands during erase suspend. 13.1.6 Status Register Error Checking Using nested locking or program command sequences during erase suspend can introduce ambiguity into status register results. Because locking changes require 2-cycle command sequences—for example, 60h followed by 01h to lock a block—following the Configuration Setup command (60h) with an invalid command produces a command sequence error (SR[5:4]=11b). If a Lock Block command error occurs during erase suspend, the flash device sets SR[4] and SR[5] to 1 even after the erase resumes. When erase is complete, possible errors during the erase cannot be detected from the status register, because of the previous locking command error. A similar situation occurs if a program operation error is nested within an erase suspend. 13.1.7 WP# Lock-Down Control The Write Protect signal, WP#, adds an additional layer of block security. WP# affects only blocks that previously had the Lock-Down command written to them. • After the lock-down status bit is set for a block, asserting WP# forces that block into the lock-down state [011] and prevents it from being unlocked. • After WP# is deasserted, the state of the block reverts to locked [111]. Software commands can then unlock the block (for erase or program operations) and subsequently re-lock it. Only flash device reset or power-down can clear the lock-down status bit and render WP# ineffective. Datasheet 74 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) Figure 34: Locking Operations Flowchart LOCKING OPERATIONS PROCEDURE Start Bus Command Operation Write 60h Block Address Write 01,D0,2Fh Block Address Write 90h BBA + 02h Optional Read Block Lock Status Write Lock Setup Comments Data = 60h Addr = Block to lock/unlock/lock-down (BA) Write Lock, Data = 01h (Lock block) Unlock, or D0h (Unlock block) Lockdown 2Fh (Lockdown block) Confirm Addr = Block to lock/unlock/lock-down (BA) Read ID Plane Data = 90h Addr = BBA + 02h Write (Optional) Read Block Lock Block Lock status data (Optional) Status Addr = BBA + 02h No Locking Change? Yes Standby (Optional) Read Array Confirm locking change on DQ[1:0]. (See Block Locking State Transitions Table for valid combinations.) Data = FFh Addr = Any address in same partition Write FFh Partition Address Lock Change Complete Write 13.2 Protection Register The W30 flash memory device includes a 128-bit Protection Register. This protection register is used to increase system security and for identification purposes. The protection register value can match the flash device to the system CPU or ASIC to prevent flash device substitution. • The lower 64 bits within the protection register are programmed by Numonyx with a unique number in each flash device. • The upper 64 OTP bits within the protection register are left for the customer to program. Once programmed, the customer segment can be locked to prevent further programming. Note: The individual bits of the user segment of the protection register are OTP, not the register in total. The user can program each OTP bit individually, one at a time, if desired. However, after the protection register is locked, the entire user segment is locked and no more user bits can be programmed. The protection register shares some of the same internal flash device resources as the parameter partition. Therefore, RWW is allowed only between the protection register and the main partitions. Table 26 describes the operations allowed in the protection register, parameter partition, and main partition during RWW and RWE. November 2007 Order Number: 290702-13 Datasheet 75 Numonyx™ Numonyx™ Wireless Flash Memory (W30) Table 26: Simultaneous Operations Allowed with the Protection Register Protection Register Parameter Partition Array Data See Description Main Partitions Description While programming or erasing in a main partition, the protection register can be read from any other partition. Reading the parameter partition data is not allowed if the protection register is being read from addresses within the parameter partition. While programming or erasing in a main partition, read operations are allowed in the parameter partition. Accessing the protection registers from parameter partition addresses is not allowed. While programming or erasing in a main partition, read operations are allowed in the parameter partition. Accessing the protection registers is allowed, but only in a partition that is different from the partition being programmed or erased, and also different from the parameter partition. While programming the protection register, reads are allowed only in the other main partitions. Access to the parameter partition is not allowed, because programming of the protection register can occur only in the parameter partition, so that the parameter partition exists in status mode. While programming or erasing the parameter partition, reads of the protection registers are not allowed in any partition. Reads in other main partitions are supported. Read Write/Erase See Description Read Write/Erase Read Read Write/Erase Write No Access Allowed Read No Access Allowed Write/Erase Read 13.2.1 Reading the Protection Register Writing the Read Identifier command allows the protection register data to be read 16 bits at a time from addresses shown in Table 20, “Flash Device Identification Codes” on page 55. The protection register is read from the Read Identifier command, and can be read in any partition.Writing the Read Array command returns the flash device to readarray mode. 13.2.2 Programing the Protection Register Issue the Protection Program command only at the parameter partition followed by the data to be programmed at the specified location. This command programs the upper 64 bits of the protection register 16 bits at a time. Table 20, “Flash Device Identification Codes” on page 55 shows allowable addresses. See also Figure 35, “Protection Register Programming Flowchart” on page 77. Issuing a Protection Program command outside the address space of the register results in a status register error (SR[4]=1). 13.2.3 Locking the Protection Register • PR-LK.0 is programmed to 0 by Numonyx to protect the unique flash device number. • PR-LK.1 can be programmed by the user to lock the user portion (upper 64 bits) of the protection register (See Figure 36, “Protection Register Locking). This bit is set using the Protection Program command to program a value of FFFDh into PR-LK. After PR-LK register bits are programmed (locked), the stored values in the protection register cannot be changed. Protection Program commands written to a locked section result in a status register error (SR[4]=1, SR[5]=1). Datasheet 76 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) . Figure 35: Protection Register Programming Flowchart PROTECTION REGISTER PROGRAMMING PROCEDURE Start Bus Command Comments Operation Protection Data = C0h Program Write Addr = Protection address Setup Write Write Protect. Register Address / Data Read Status Register Protection Data = Data to program Program Addr = Protection address Read SRD Toggle CE# or OE# to update SRD Check SR[7] 1 = WSM Ready 0 = WSM Busy Write C0h Addr=Prot addr Read Standby SR[7] = 1? Yes No Protection Program operations addresses must be within the protection register address space. Addresses outside this space will return an error. Repeat for subsequent programming operations. Full status register check can be done after each program or after a sequence of program operations. Full Status Check (if desired) Program Complete FULL STATUS CHECK PROCEDURE Read SRD Bus Command Operation Standby SR[4:3] = 1,1 Comments SR[1] SR[3] SR[4] 0 1 1 VPP E rror 0 0 1 Protection register program error Register locked; Operation aborted VPP Range Error Standby SR[4,1] = 1,0 Programming Error Standby 1 0 1 SR[4,1] = 1,1 Locked-Register Program Aborted SR[3] MUST be cleared before the WSM will allow further program attempts. Only the Clear Staus Register command clears SR[4:3,1]. If an error is detected, clear the status register before attempting a program retry or other error recovery. Program Successful November 2007 Order Number: 290702-13 Datasheet 77 Numonyx™ Numonyx™ Wireless Flash Memory (W30) Figure 36: Protection Register Locking 0x88 User-Programmable 0x85 0x84 Intel Factory-Programmed 0x81 PR Lock Register 0 0x80 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 13.3 VPP Protection The Product Name provides in-system program and erase at VPPL. For factory programming, the W30 flash memory device also includes a low-cost, backwardcompatible 12 V programming feature.(See “Factory Programming” on page 60.) The EFP feature can also be used to greatly improve factory program performance, as explained in Section 11.3, “Enhanced Factory Program (EFP)” on page 61. In addition to flexible block locking, holding the VPP programming voltage low can provide hardware write protection of all flash-device blocks. If VPP is below VPPLK, program or erase operations result in an error displayed in SR[3]. (See Figure 37.) Figure 37: Examples of VPP Power Supply Configurations System supply 12 V supply ≤ 10K Ω VCC VPP System supply Prot# (logic signal) VCC VPP • 12 V fast programming • Absolute write protection with V PP ≤ VPPLK System supply (Note 1) 12 V supply • Low-voltage programming • Absolute write protection via logic signal System supply VCC VPP VCC VPP • Low voltage and 12 V fast programming Note: • Low-voltage programming If the VCC supply can sink adequate current, you can use an appropriately valued resistor. Datasheet 78 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) 14.0 Set Read Configuration Register The Set Read Configuration Register (RCR) command sets the burst order, frequency configuration, burst length, and other parameters. A two-bus cycle command sequence initiates this operation. The read configuration register data is placed on the lower 16 bits of the address bus (A[15:0]) during both bus cycles. 1. The Set Read Configuration Register command is written, along with the configuration data (on the address bus). 2. A second write confirms the operation and again presents the read configuration register data on the address bus. 3. The read configuration register data is latched on the rising edge of ADV#, CE#, or WE# (whichever occurs first). This command functions independently of the applied VPP voltage. After executing this command, the flash device returns to read-array mode. To examine the contents of the read configuration register, write the Read Identifier command and then read location 05h. (See Table 27 and Table 28.) Table 27: Read Configuration Register Definitions Read Mod e RM 15 Res’d First Access Latency Count LC2 13 LC1 12 LC0 11 WAIT Polarit y WP 10 Data Outpu t Config DOC 9 WAI T Confi g WC 8 Burs t Seq BS 7 Cloc k Confi g CC 6 Res’ d R 5 Res’ d R 4 Burs t Wra p BW 3 Burst Length R 14 BL2 2 BL1 1 BL0 0 Table 28: Read Configuration Register Descriptions (Sheet 1 of 2) Bit 15 14 13-11 Name RM Read Mode R LC[2:0] First Access Latency Count WP WAIT Signal Polarity DOC Data Output Configuration WC WAIT Configuration BS Burst Sequence CC Clock Configuration R R Description1 0 = Synchronous Burst Reads Enabled 1 = Asynchronous Reads Enabled (Default) Reserved 001 = Reserved 010 = Code 2 011 = Code 3 100 = Code 4 101 = Code 5 111 = Reserved (Default) Notes 2,6 5 6 10 9 8 7 0 = WAIT signal is asserted low 1 = WAIT signal is asserted high (Default) 0 = Hold Data for One Clock 1 = Hold Data for Two Clock (Default) 0 = WAIT Asserted During Delay 1 = WAIT Asserted One Data Cycle before Delay (Default) 1 = Linear Burst Order (Default) 0 = Burst Starts and Data Output on Falling Clock Edge 1 = Burst Starts and Data Output on Rising Clock Edge (Default) Reserved Reserved 3 6 6 6 5 4 5 5 November 2007 Order Number: 290702-13 Datasheet 79 Numonyx™ Numonyx™ Wireless Flash Memory (W30) Table 28: Read Configuration Register Descriptions (Sheet 2 of 2) Bit 3 Name BW Burst Wrap BL[2:0] Burst Length Description1 0 = Wrap bursts within burst length set by CR[2:0] 1 = Don’t wrap accesses within burst length set by CR[2:0].(Default) 001 010 011 111 = = = = 4-Word Burst 8-Word Burst 16-Word Burst (Available on the 130 nm lithography) Continuous Burst (Default) Notes 2-0 4 Notes: 1. Undocumented combinations of bits are reserved by Numonyx for future implementations. 2. Synchronous and page read mode configurations affect reads from main blocks and parameter blocks. Status Register and configuration reads support single read cycles. RCR[15]=1 disables the configuration set by RCR[14:0]. 3. Data is not ready when WAIT is asserted. 4. Set the synchronous burst length. In asynchronous page mode, the burst length equals four words. 5. Set all reserved Read Configuration Register bits to zero. 6. Setting the Read Configuration Register for synchronous burst-mode with a latency count of 2 (RCR[13:11] = 010), data hold for 2 clocks (RCR[9] = 1), and WAIT asserted one data cycle before delay (RCR[8] =1) is not supported. 14.1 Read Mode (RCR[15]) All partitions support two high-performance read configurations and RCR[15] sets the read configuration to one of these modes: • synchronous burst mode • asynchronous page mode (default) Status register, query, and identifier modes support only asynchronous and singlesynchronous read operations. 14.2 First Access Latency Count (RCR[13:11]) The First Access Latency Count (RCR[13:11]) configuration tells the flash device how many clocks must elapse from ADV# de-assertion (VIH) before driving the first data word onto its data pins. The input clock frequency determines this value. See Table 27, “Read Configuration Register Definitions” on page 79 for latency values. Figure 38 shows data output latency from ADV# assertion for different latencies. Refer to Section 14.2.1, “Latency Count Settings” on page 81 for Latency Code Settings. Figure 38: First Access Latency Configuration CLK [C] Address [A] ADV# [V] D[15:0] [Q] Code 2 Valid Output Valid Output Valid Output Valid Output Valid Output Valid Output Valid Address D[15:0] [Q] D[15:0] [Q] D[15:0] [Q] Code 3 Code 4 Code 5 Valid Output Valid Output Valid Output Valid Output Valid Output Valid Output Valid Output Valid Output Valid Output Valid Output Valid Output Valid Output Note: ) Other First Access Latency Configuration settings are reserved. Datasheet 80 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) Figure 39: Word Boundary Word 0 - 3 Word 4 - 7 Word 8 - B Word C - F 0 1 2 3 4 5 6 7 8 9 A BCDE F 16 Word Boundary 4 Word Boundary Note: The 16-word boundary is the end of the flash device sense word-line. 14.2.1 Latency Count Settings Table 29: Latency Count Settings tAVQV/tCHQV (85ns/22ns) Latency Count Settings Frequency 2 < 31 3, 4, 5 < 33 tAVQV/tCHQV (70ns/20ns) 2, 3, 4, 5 < 40 tAVQV/tCHQV (90ns/22ns) 2 < 29 3, 4, 5 < 33 MHz Unit Figure 40: Data Output with LC Setting at Code 3 tADD-DELAY CLK (C) CE# (E) ADV# (V) AMAX-0 (A) Code 3 DQ15-0 (D/Q) High Z Valid Output Valid Output 0st 1nd 2rd 3th tDATA 4th Valid Address R103 14.3 WAIT Signal Polarity (RCR[10]) • If the WT bit is cleared (RCR[10]=0), then WAIT is configured to be asserted low. A 0 on the WAIT signal indicates that data is not ready and the data bus contains invalid data. • Conversely, if RCR[10] is set, then WAIT is asserted high. November 2007 Order Number: 290702-13 Datasheet 81 Numonyx™ Numonyx™ Wireless Flash Memory (W30) In either case, if WAIT is deasserted, then data is ready and valid. WAIT is asserted during asynchronous page mode reads. 14.4 WAIT Signal Function The WAIT signal indicates data valid when the flash device is operating in synchronous mode (RCR[15]=0), and when addressing a partition that is currently in read-array mode. The WAIT signal is deasserted only when data is valid on the bus. • When the flash device is operating in synchronous non-read-array mode, such as read status, read ID, or read query, WAIT is set to an asserted state, as determined by RCR[10]. See Figure 14, “WAIT Signal in Synchronous Non-Read Array Operation Waveform” on page 37. • When the flash device is operating in asynchronous page mode or asynchronous single word read mode, WAIT is set to an asserted state, as determined by RCR[10]. See Figure 10, “Page-Mode Read Operation Waveform” on page 33, and Figure 8, “Asynchronous Read Operation Waveform” on page 31. From a system perspective, the WAIT signal is in the asserted state (based on RCR[10]) when the flash device is operating in synchronous non-read-array mode (such as Read ID, Read Query, or Read Status), or if the flash device is operating in asynchronous mode (RCR[15]=1). In these cases, the system software must ignore (mask) the WAIT signal, because WAIT does not convey any useful information about the validity of what is appearing on the data bus. CONDITION WAIT Tri-State Active No-Effect Active Asserted Asserted CE# = VIH CE# = VIL OE# Synchronous Array Read Synchronous Non-Array Read All Asynchronous Read and all Write 14.5 Data Hold (RCR[9]) The Data Output Configuration (DOC) bit (RCR[9]) determines whether a data word remains valid on the data bus for one or two clock cycles. The minimum data set-up time on the processor, and the flash memory clock-to-data output delay, determine whether one or two clocks are needed. • A DOC set at 1-clock data hold corresponds to a 1-clock data cycle. • A DOC set at 2-clock data hold corresponds to a 2-clock data cycle. The setting of this configuration bit depends on the system and CPU characteristics. For clarification, see Figure 41. The following is a method for determining this configuration setting. To set the flash device at 1-clock data hold for subsequent reads, the following condition must be satisfied: tCHQV (ns) + tDATA ( ns) < O ne CLK Period (ns) As an example, use a clock frequency of 54 MHz and a clock period of 25 ns. Assume the data output hold time is one clock. Apply this data to the formula above for the subsequent reads: Datasheet 82 November 2007 Order Number: 290702-13 20 ns + 4 ns ≤ 25 ns This equation is satisfied, and data output is available and valid at every clock period. If tDATA is long, hold for two cycles. During page-mode reads, the initial access time can be determined using the formula: tADD-DELAY (ns)tDATA ( ns) + tAVQV ( ns) Subsequent reads in page mode are defined by: tAPA (ns) + tDATA (ns) (minimum time) Figure 41: Data Output Configuration with WAIT Signal Delay CLK [C] WAIT (CR.8 = 1) tCHQV WAIT (CR.8 = 0) Note 1 Valid Output Valid Output Valid Output Note 1 1 CLK Data Hold DQ15-0 [Q] tCHTL/H WAIT (CR.8 = 0) WAIT (CR.8 = 1) Note 1 tCHQV Note 1 Valid Output Valid Output 2 CLK Data Hold DQ15-0 [Q] Note: WAIT shown asserted high (RCR[10]=1). 14.6 WAIT Delay (RCR[8]) The WAIT configuration bit (RCR[8]) controls WAIT signal delay behavior for all synchronous read-array modes. This bit setting depends on the system and CPU characteristics. The WAIT can be asserted either during, or one data cycle before, a valid output. In synchronous linear read array (no-wrap mode RCR[3]=1) of 4-word, 8-word, 16word, or continuous-word burst mode, an output delay might occur when a burst sequence crosses its first flash device-row boundary (16-word boundary). • If the burst start address is 4-word boundary aligned, the delay does not occur. • If the start address is misaligned to a 4-word boundary, the delay occurs once per burst-mode read sequence. The WAIT signal informs the system of this delay. 14.7 Burst Sequence (RCR[7]) The burst sequence specifies the synchronous-burst mode data order (see Table 30, “Sequence and Burst Length” on page 84). When operating in a linear burst mode, either 4-word, 8-word, or 16-word burst length with the burst wrap bit (RCR[3]) set, or in continuous burst mode, the flash device might incur an output delay when the burst sequence crosses the first 16-word boundary. (See Figure 39, “Word Boundary” on page 81 for word boundary description.) Numonyx™ Numonyx™ Wireless Flash Memory (W30) Whether this delay occurs depends on the starting address. • If the starting address is aligned to a 4-word boundary, there is no delay. • If the starting address is the end of a 4-word boundary, the output delay is one clock cycle less than the First Access Latency Count; this is the worst-case delay. The delay takes place only once, and only if the burst sequence crosses a 16-word boundary. The WAIT pin informs the system of this delay. For timing diagrams of WAIT functionality, see these figures: • Figure 11, “Single Synchronous Read-Array Operation Waveform” on page 34 • Figure 12, “Synchronous 4-Word Burst Read Operation Waveform” on page 35 • Figure 13, “WAIT Functionality for EOWL (End-of-Word Line) Condition Waveform” on page 36 Table 30: Sequence and Burst Length Burst Addressing Sequence (Decimal) Start Addr. (Dec) 4-Word Burst CR[2:0]=001b Linear 0 1 2 Wrap (CR[3]=0) 3 4 5 6 7 ... 14 15 0 1 2 No-Wrap (CR[3]=1) 3 4 5 6 7 ... 14 15 Note: Available on the 130 nm lithography. ... 0-1-2-3 1-2-3-4 2-3-4-5 3-4-5-6 0-1-2-3-4-5-6-7 1-2-3-4-5-6-7-8 2-3-4-5-6-7-8-9 3-4-5-6-7-8-9-10 4-5-6-7-8-9-10-11 5-6-7-8-9-10-11-12 6-7-8-9-10-11-12-13 7-8-9-10-11-12-13-14 ... Datasheet 84 ... 0-1-2-3 1-2-3-0 2-3-0-1 3-0-1-2 8-Word Burst CR[2:0]=010b Linear 0-1-2-3-4-5-6-7 1-2-3-4-5-6-7-0 2-3-4-5-6-7-0-1 3-4-5-6-7-0-1-2 4-5-6-7-0-1-2-3 5-6-7-0-1-2-3-4 6-7-0-1-2-3-4-5 7-0-1-2-3-4-5-6 ... 16-Word Burst1 CR[2:0]=011b Linear 0-1-2...14-15 1-2-3...14-15-0 2-3-4...15-0-1 3-4-5...15-0-1-2 4-5-6...15-0-1-2-3 5-6-7...15-0-1...4 6-7-8...15-0-1...5 7-8-9...15-0-1...6 ... Continuous Burst CR[2:0]=111b Linear 0-1-2-3-4-5-6-... 1-2-3-4-5-6-7-... 2-3-4-5-6-7-8-... 3-4-5-6-7-8-9-... 4-5-6-7-8-9-10... 5-6-7-8-9-10-11... 6-7-8-9-10-11-12-... 7-8-9-10-11-12-13... ... 14-15-0-1...13 15-0-1-2-3...14 0-1-2...14-15 1-2-3...15-16 2-3-4...16-17 3-4-5...17-18 4-5-6...18-19 5-6-7...19-20 6-7-8...20-21 7-8-9...21-22 ... 14-15-16-17-18-19-20-... 15-16-17-18-19-... 0-1-2-3-4-5-6-... 1-2-3-4-5-6-7-... 2-3-4-5-6-7-8-... 3-4-5-6-7-8-9-... 4-5-6-7-8-9-10... 5-6-7-8-9-10-11... 6-7-8-9-10-11-12-... 7-8-9-10-11-12-13... ... 14-15...28-29 15-16...29-30 14-15-16-17-18-19-20-... 15-16-17-18-19-20-21-... November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) 14.8 Clock Edge (RCR[6]) Configuring the valid clock edge enables a flexible memory interface to a wide range of burst CPUs. Clock configuration sets the flash device to start a burst cycle, output data, and assert WAIT on the rising or falling edge of the clock. 14.9 Burst Wrap (RCR[3]) The burst wrap bit determines whether 4-word, 8-word, or 16-word burst accesses wrap within the burst-length boundary, or they cross word-length boundaries to perform linear accesses. No-wrap mode (RCR[3]=1) enables WAIT to hold off the system processor, as it does in the continuous burst mode, until valid data is available. In no-wrap mode (RCR[3]=0), the flash device operates similarly to continuous linear burst mode, but consumes less power during 4-word, 8-word, or 16-word bursts. For example, if RCR[3]=0 (wrap mode) and RCR[2:0] = 1h (4-word burst), possible linear burst sequences are 0-1-2-3, 1-2-3-0, 2-3-0-1, 3-0-1-2. If RCR[3]=1 (no-wrap mode) and RCR[2:0] = 1h (4-word burst length), then possible linear burst sequences are 0-1-2-3, 1-2-3-4, 2-3-4-5, and 3-4-5-6. RCR[3]=1 not only enables limited non-aligned sequential bursts, but also reduces power by minimizing the number of internal read operations. Setting RCR[2:0] bits for continuous linear burst mode (7h) also achieves the above 4word burst sequences. However, significantly more power might be consumed. The 12-3-4 sequence, for example, consumes power during the initial access, again during the internal pipeline lookup as the processor reads word 2, and possibly again, depending on system timing, near the end of the sequence as the flash device pipelines the next 4-word sequence. RCR[3]=1 while in 4-word burst mode (no-wrap mode) reduces this excess power consumption. 14.10 Burst Length (RCR[2:0]) The burst length is the number of words the flash device outputs in a synchronous read access. 4-word, 8-word, 16-word, and continuous-word are supported. In 4-word, 8-word, or 16-word burst configuration, the burst wrap bit (RCR[3]) determines whether burst accesses wrap within word-length boundaries, or they cross word-length boundaries to perform a linear access. After an address is specified, the flash device outputs data until it reaches the end of its burstable address space. Continuous burst accesses are linear only (burst wrap bit RCR[3] is ignored during continuous burst) and do not wrap within word-length boundaries (see Table 30, “Sequence and Burst Length” on page 84). November 2007 Order Number: 290702-13 Datasheet 85 Numonyx™ Numonyx™ Wireless Flash Memory (W30) Appendix A Write State Machine Table 31 shows the command state transitions, based on incoming commands. Only one partition can be actively programming or erasing at a time. Table 31: Next State Table (Sheet 1 of 2) C h i p N e x t S ta te a ft e r C o m m a n d In p u t C u r r e n t C h ip S ta te Ready L o c k /C R S e tu p OTP S e tu p B usy S e tu p P ro g r a m B usy S uspend S e tu p B usy E ra s e S uspend S e tu p P ro g r a m in E ra s e S u s p e n d B usy S uspend L o c k /C R S e tu p in E r a s e S uspend E nhanced F a c to r y P ro g r a m S e tu p EF P Busy E F P V e rify E ra s e S uspend P g m in E ra s e S u s p S e tu p P r o g ra m B u s y P r o g ra m S u s p e n d R e a d y ( E rr o r ) E ra s e B u s y E ra s e S u s p e n d E ra s e B u s y Pgm Busy E ra s e B u s y E ra s e S u s p P r o g ra m B u s y P gm S usp P r o g ra m B u s y P ro g r a m S u s p e n d R e a d y (E r ro r) E ra s e B u s y E ra s e S u s p e n d (8 ) R ead A rr a y (3 ) P r o g ra m S e tu p ( 4 ,5 ) E ra s e S e tu p ( 4 ,5 ) W r ite S ta te M a c h in e (W S M ) N e x t S ta te T a b le E nhanced F a c to ry Pgm S e tu p (4 ) B E C o n firm , P /E R e s u m e , ULB C o n fir m (D 0 H ) (9 ) P r o g ra m / E ra s e S uspend (B 0 H ) Read S ta tu s C le a r S ta tu s R e g is te r (5 0 H ) (6) R ead ID /Q u e r y (F F H ) R eady (1 0 H /4 0 H ) P r o g ra m S e tu p (2 0 H ) E ra s e S e tu p (3 0 H ) EFP S e tu p (7 0 H ) R eady (9 0 H , 9 8 H ) R e a d y ( L o c k E r ro r) Ready O T P Busy R e a d y (L o c k E rr o r ) P r o g ra m in E r a s e S u s p e n d B u s y P r o g ra m i n E r a s e S u s p e n d B u s y P r o g ra m S u s p e n d in E r a s e S u s p e n d E r a s e S u s p e n d (L o c k E rr o r ) R e a d y ( E rr o r ) P g m in E r a s e S usp B usy E ra s e S u s p E F P B usy EF P Busy (7 ) (7 ) P g m S u s p in E ra s e S u s p P ro g r a m in E ra s e S u s p e n d B u s y P ro g r a m S u s p e n d in E ra s e S u s p e n d E ra s e S u s p e n d (L o c k E rro r) R e a d y (E r ro r) V e r if y B u s y O u t p u t N e x t S t a t e a f t e r C o m m a n d In p u t O u tp u t N e x t S ta te T a b le P g m S e tu p , E ra s e S e tu p , O T P S e tu p , P g m in E ra s e S u s p S e tu p , E F P S e tu p , E FP B usy, V e r ify B u s y L o c k /C R S e tu p , L o c k /C R S e tu p in E r a s e S u s p O T P Busy Ready, P gm B usy, P gm S uspend, E ra s e B u s y , E ra s e S u s p e n d , P g m In E ra s e S u s p B u s y , P g m S u s p In E r a s e S u s p (1) S ta tu s S ta tu s S ta tu s A rr a y (3 ) S ta tu s O u tp u t d o e s n o t c h a n g e S ta tu s O u tp u t does not change ID /Q u e r y Datasheet 86 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) Table 31: Next State Table (Sheet 2 of 2) C h i p N e x t S t a t e a f t e r C o m m a n d In p u t C u r r e n t C h ip S ta te Ready L o c k /C R S e tu p OTP S e tu p B usy S e tu p P ro g r a m B usy S uspend S e tu p B usy E ra s e S uspend S e tu p P r o g r a m in E ra s e S u s p e n d B usy S uspend L o c k / C R S e t u p in E r a s e S uspend E nhanced F a c to ry P ro g r a m S e tu p EFP Busy E F P V e r if y E FP B usy (7 ) (7 ) W r it e S t a t e M a c h i n e ( W S M ) N e x t S t a t e T a b l e (8 ) Lock, U n lo c k , L o c k -d o w n , C R s e tu p (6 0 H ) L o c k /C R S e tu p (5) O TP S e tu p (5 ) Lock B lo c k C o n firm (0 1 H ) (9) LockD ow n B lo c k C o n f ir m (2 F H ) (9 ) W r it e C R C o n f ir m (9 ) E nhanced Fact Pgm E x it ( b lk a d d W A 0) (X X X X H ) I lle g a l com m ands or E F P d a ta (2 ) W SM O p e r a t io n C o m p le t e s (C 0 H ) O TP S e tu p (0 3 H ) R eady (o th e r c o d e s ) R e a d y (L o c k E rr o r ) R eady R eady O TP B usy R eady R e a d y ( L o c k E r ro r) N /A R eady P ro g ra m B u s y P ro g ra m B u s y P ro g ra m S u s p e n d R e a d y ( E r ro r) E ra s e B u s y L o c k /C R S e t u p in E ra s e S u s p E ra s e S u s p e n d P r o g r a m in E r a s e S u s p e n d B u s y P r o g r a m in E r a s e S u s p e n d B u s y P r o g r a m S u s p e n d in E r a s e S u s p e n d E ra s e S u s p e n d (L o c k E r ro r ) E ra s e S u s p E ra s e S u s p E ra s e S u s p E r a s e S u s p e n d (L o c k E rr o r ) N /A E ra s e S uspend E ra s e B u s y N /A R eady N /A R eady N /A R e a d y ( E r ro r) E F P V e r if y R eady E F P B usy E F P V e r if y (7 ) (7) V e r if y B u s y R eady O u t p u t N e x t S t a t e a f t e r C o m m a n d In p u t O u t p u t N e x t S t a t e T a b le P g m S e tu p , E ra s e S e tu p , O T P S e tu p , P g m in E r a s e S u s p S e t u p , E F P S e tu p , EFP Busy, V e r if y B u s y L o c k /C R S e tu p , L o c k / C R S e t u p in E r a s e S u s p O TP Busy Ready, P gm B usy, P gm S uspend, E ra s e B u s y , E ra s e S u s p e n d , P g m In E ra s e S u s p B u s y , P g m S u s p In E ra s e S u s p S ta tu s (1) S ta tu s A r ra y S ta tu s O u tp u t d o e s not change S ta tu s O u tp u t d o e s n o t c h a n g e A rr a y O u tp u t d o e s not change Notes: 1. The output state shows the type of data that appears at the outputs if the partition address is the same as the command address. — A partition can be placed in Read Array, Read Status or Read ID/CFI, depending on the command issued. — Each partition stays in its last output state (Array, ID/CFI or Status) until a new command changes it. The next WSM state does not depend on the output state of the partition. — For example, if the partition #1 output state is Read Array and the partition #4 output state is Read Status, every read from partition #4 (without issuing a new command) outputs the Status register. 2. Illegal commands are any commands not defined in the command set. November 2007 Order Number: 290702-13 Datasheet 87 Numonyx™ Numonyx™ Wireless Flash Memory (W30) 3. 4. 5. 6. 7. 8. 9. 10. All partitions default to Read Array mode at power-up. A Read Array command issued to a busy partition results in undetermined data when a partition address is read. Both cycles of two-cycle commands must be issued to the same partition address. If the two cycles are issued to different partitions, the address used for the second write cycle determines the active partition. Both partitions output status information when read. If the WSM is active, both cycles of a two-cycle command are ignored. This feature differs from previous Numonyx flash memory devices. The Clear Status command clears status register error bits, except when the WSM is running (Pgm Busy, Erase Busy, Pgm Busy In Erase Suspend, OTP Busy, EFP modes) or suspended (Erase Suspend, Pgm Suspend, Pgm Suspend In Erase Suspend). EFP writes are allowed only when status register bit SR.0 = 0. EFP is busy if the Block Address = the address at the EFP Confirm command. Any other commands are treated as data. The current state is the state of the WSM, not the state of the partition. Confirm commands (Lock Block, Unlock Block, Lock-down Block, Configuration Register) perform the operation and then move to the Ready State. In Erase suspend mode, the only valid two-cycle commands are Program Word, Lock/Unlock/Lockdown Block, and CR Write. Both cycles of other two-cycle commands (Program OTP & confirm, EFP Setup & confirm, Erase setup & confirm) are ignored. In Program suspend or Program suspend in Erase suspend, both cycles of all two-cycle commands are ignored. Datasheet 88 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) Appendix B Common Flash Interface This appendix defines the data structure or database returned by the Common Flash Interface (CFI) Query command. System software parses this structure to gain critical information, such as block size, density, x8/x16, and electrical specifications. Once this information has been obtained, the software can determine which command sets to use to enable flash device writes, enable block erases, and otherwise control the flash device. The Query is part of an overall specification for multiple command set and control interface descriptions, which is called the Common Flash Interface, or CFI. B.1 Query Structure Output The Query database allows system software to obtain information for controlling the flash device. This section describes the flash device CFI-compliant interface that allows access to Query data. Query data are presented on the lowest-order data outputs (DQ0-7) only. The numerical offset value is the address relative to the maximum bus width that the flash device supports. On the W30 family of flash memory devices, the Query table device starting address is a 10h, which is a word address for x16 flash devices. For a word-wide (x16) flash device, the first two Query-structure bytes, ASCII Q and R, appear on the low byte at word addresses 10h and 11h. • This CFI-compliant flash device outputs 00h data on upper bytes. • The flash device outputs ASCII Q in the low byte (DQ0-7) and 00h in the high byte (DQ8-15). At Query addresses containing two or more bytes of information, the least significant data byte is presented at the lower address, and the most significant data byte is presented at the higher address. In all of the following tables, addresses and data are represented in hexadecimal notation, so the h suffix has been dropped. In addition, because the upper byte of word-wide flash devices is always 00h, the leading 00 has been dropped from the table notation, and only the lower byte value is shown. Any x16 flash device outputs can be assumed to have 00h on the upper byte in this mode. Table 32: Summary of Query Structure Output as a Function of the Flash Device and Mode Device Hex Offset 00010: 00011: 00012: Hex Code 51 52 59 ASCI I Value Q R Y Device Addresses November 2007 Order Number: 290702-13 Datasheet 89 Numonyx™ Numonyx™ Wireless Flash Memory (W30) Table 33: Example of Query Structure Output of x16- and x8 Flash Devices Word Addressing: Offset AX—A0 00010h 00011h 00012h 00013h 00014h 00015h 00016h 00017h 00018h ... 0051 0052 0059 P IDLO P IDHI PLO PHI A IDLO A IDHI ... Hex Code D15—D0 “Q” “R” “Y” PrVendor ID # PrVendor TblAdr AltVendor ID # ... Value Offset AX—A0 00010h 00011h 00012h 00013h 00014h 00015h 00016h 00017h 00018h ... 51 52 59 P IDLO P IDLO P IDHI ... Byte Addressing: Hex Code D7—D0 Q R Y PrVendor ID # ID # ... Value B.2 Query Structure Overview The Query command causes the flash device to display the Common Flash Interface (CFI) Query structure or database. Table 34 summarizes the structure sub-sections and address locations. Table 34: Query Structure Offset 00000h 00001h (BA+2)h(2) 00004-Fh 00010h 0001Bh 00027h P(3) Description Manufacturer Code Device Code Block Status register Block-specific information Reserved Reserved for vendor-specific information CFI query identification string Command set ID and vendor data offset System interface information Device timing & voltage information Device geometry definition Flash device layout Vendor-defined additional information specific Primary Intel-specific Extended Query Table to the Primary Vendor Algorithm Sub-Section Name (1) Notes: 1. Refer to the Section B.1, “Query Structure Output” on page 89 and offset 28h, for the detailed definition of the offset address as a function of the flash device bus width and mode. 2. BA = Block Address beginning location (for example, 08000h is the block 1’beginning location when the block size is 32Kword). 3. Offset 15 defines P, which points to the Primary Numonyx-specific Extended Query Table. B.3 Block Status Register The Block Status Register indicates whether an erase operation completed successfully, a given block is locked, or a given block can be accessed for flash memory program/ erase operations. Block Erase Status (BSR.1) allows system software to determine the success of the last block erase operation. Use BSR.1 just after power-up to verify that the VCC supply was not accidentally removed during an erase operation. Datasheet 90 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) Table 35: Block Status Register Offset Length Description (BA+2)h(1) 1 Block Lock Status Register BSR.0 Block lock status 0 = Unlocked 1 = Locked BSR.1 Block lock-down status 0 = Not locked down 1 = Locked down BSR 2–7: Reserved for future use Add. Value BA+2 --00 or --01 BA+2 (bit 0): 0 or 1 BA+2 (bit 1): 0 or 1 BA+2 (bit 2–7): 0 Notes: 1. BA = Block Address beginning location (for example, 08000h is the block 1 beginning location when the block size is 32Kword). B.4 CFI Query Identification String The Identification String verifies that the component supports the Common Flash Interface specification. It also indicates the specification version and supported vendorspecified command set(s). . Table 36: CFI Identification Offset Length Description Add. 10: 11: 12: 13: 14: 15: 16: 17: 18: 19: 1A: Hex Code --51 --52 --59 --03 --00 --39 --00 --00 --00 --00 --00 Value Q R Y 10h 3 Query-unique ASCII string ”QRY” Primary vendor command set and control interface ID code. 16-bit ID code for vendor-specified algorithms Extended Query Table primary algorithm address Alternate vendor command set and control interface ID code. 0000h means no second vendor-specified algorithm exists Secondary algorithm Extended Query Table address. 0000h means none exists 13h 15h 17h 19h 2 2 2 2 November 2007 Order Number: 290702-13 Datasheet 91 Numonyx™ Numonyx™ Wireless Flash Memory (W30) Table 37: System Interface Information Offset 1Bh Length 1 Description VCC logic supply minimum program/erase voltage bits 0–3 BCD 100 mV bits 4–7 BCD volts VCC logic supply maximum program/erase voltage bits 0–3 BCD 100 mV bits 4–7 BCD volts VPP [programming] supply minimum program/erase voltage bits 0–3 BCD 100 mV bits 4–7 HEX volts VPP [programming] supply maximum program/erase voltage bits 0–3 BCD 100 mV bits 4–7 HEX volts “n” such that typical single word program time-out = 2n μ-sec “n” such that typical max. buffer write time-out = 2n μ-sec “n” such that typical block erase time-out = 2n m-sec “n” such that typical full chip erase time-out = 2n m-sec “n” such that maximum word program time-out = 2n times typical “n” such that maximum buffer write time-out = 2n times typical “n” such that maximum block erase time-out = 2n times typical “n” such that maximum chip erase time-out = 2n times typical Hex Add. Code Value 1B: --17 1.7V 1Ch 1 1C: --19 1.9V 1Dh 1 1D: --B4 11.4V 1Eh 1 1E: --C6 12.6V 1Fh 20h 21h 22h 23h 24h 25h 26h 1 1 1 1 1 1 1 1 1F: 20: 21: 22: 23: 24: 25: 26: --04 16μs --00 NA --0A 1s --00 NA --04 256μs --00 NA --03 8s --00 NA Datasheet 92 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) B.5 Flash Device Geometry Definition Offset 27h Length Description n 1 “n” such that device size = 2 in number of by tes Flash device interface code assignment: "n" such that n+1 specifies the bit field that represents the flash device width cap abilities as described in the table: 7 6 5 4 3 2 1 0 Table 38: Flash Device Geometry Definition Code 27: See table below 28h 2 — 15 — 14 — 13 — 12 x64 11 x32 10 x16 9 x8 8 28: 29: 2A: 2B: 2C: --01 --00 --00 --00 x16 2Ah 2Ch 2 1 — — — — — — — — “n” such that maximum number of by tes in write buffer = 2 n Number of erase block regions (x) within device: 1. x = 0 means no erase blocking; the device erases in bulk 2. x specifies the number of device regions with one or more contiguous same-size erase blocks. 3. S ymmetrically b locked partitions have one blockin g reg ion Erase Block Region 1 Information bits 0–15 = y, y+1 = number of identical-size erase blocks bits 16–31 = z, region erase block(s) size are z x 256 bytes Erase Block Region 2 Information bits 0–15 = y, y+1 = number of identical-size erase blocks bits 16–31 = z, region erase block(s) size are z x 256 bytes Reserved for future erase block region information 0 See table below 2Dh 4 31h 4 35h 4 2D: 2E: 2F: 30: 31: 32: 33: 34: 35: 36: 37: 38: See table below See table below See table below Address 27: 28: 29: 2A: 2B: 2C: 2D: 2E: 2F: 30: 31: 32: 33: 34: 35: 36: 37: 38: 32 Mbit –B –T --16 --16 --01 --01 --00 --00 --00 --00 --00 --00 --02 --02 --07 --3E --00 --00 --20 --00 --00 --01 --07 --3E --00 --00 --20 --00 --00 --01 --00 --00 --00 --00 --00 --00 --00 --00 64 Mbit –B –T --17 --17 --01 --01 --00 --00 --00 --00 --00 --00 --02 --02 --07 --7E --00 --00 --20 --00 --00 --01 --07 --7E --00 --00 --20 --00 --00 --01 --00 --00 --00 --00 --00 --00 --00 --00 128 Mbit –B –T --18 --18 --01 --01 --00 --00 --00 --00 --00 --00 --02 --02 --07 --FE --00 --00 --20 --00 --00 --01 --07 --FE --00 --00 --20 --00 --00 --01 --00 --00 --00 --00 --00 --00 --00 --00 November 2007 Order Number: 290702-13 Datasheet 93 Numonyx™ Numonyx™ Wireless Flash Memory (W30) B.6 Numonyx-Specific Extended Query Table (1) Table 39: Primary Vendor-Specific Extended Query Offset P = 39h (P+0)h (P+1)h (P+2)h (P+3)h (P+4)h (P+5)h (P+6)h (P+7)h (P+8)h Length 3 Description (Optional flash features and commands) Primary extended query table Unique ASCII string “PRI“ Major version number, ASCII Minor version number, ASCII Optional feature and command support (1=yes, 0=no) bits 10–31 are reserved; undefined bits are “0.” If bit 31 is “1” then another 31 bit field of Optional features follows at the end of the bit–30 field. bit 0 Chip erase supported bit 1 Suspend erase supported bit 2 Suspend program supported bit 3 Legacy lock/unlock supported bit 4 Queued erase supported bit 5 Instant individual block locking supported bit 6 Protection bits supported bit 7 Pagemode read supported bit 8 Synchronous read supported bit 9 Simultaneous operations supported Supported functions after suspend: read Array, Status, Query Other supported operations are: bits 1–7 reserved; undefined bits are “0” bit 0 Program supported after erase suspend Block status register mask bits 2–15 are Reserved; undefined bits are “0” bit 0 Block Lock-Bit Status register active bit 1 Block Lock-Down Bit Status active VCC logic supply highest performance program/erase voltage bits 0–3 BCD value in 100 mV bits 4–7 BCD value in volts VPP optimum program/erase supply voltage bits 0–3 BCD value in 100 mV bits 4–7 HEX value in volts Add. 39: 3A: 3B: 3C: 3D: 3E: 3F: 40: 41: bit 0 bit 1 bit 2 bit 3 bit 4 bit 5 bit 6 bit 7 bit 8 bit 9 42: Hex Code Value --50 "P" --52 "R" --49 "I" --31 "1" --33 "3" --E6 --03 --00 --00 =0 No =1 Yes =1 Yes =0 No =0 No =1 Yes =1 Yes =1 Yes =1 Yes =1 Yes --01 1 1 4 (P+9)h 1 (P+A)h (P+B)h 2 (P+C)h 1 bit 0 43: 44: bit 0 bit 1 45: =1 --03 --00 =1 =1 --18 Yes Yes Yes 1.8V (P+D)h 1 46: --C0 12.0V Datasheet 94 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) Table 40: Protection Register Information Offset(1) P = 39h (P+E)h Length 1 Description (Optional flash device features and commands) Number of Protection register fields in JEDEC ID space. 00h indicates that 256 protection fields are available Protection Field 1: Protection Description This field describes user-available One Time Programmable (OTP) Protection register bytes. • Some bytes are pre-programmed with flash device-unique serial numbers. • Other bytes are user programmable. Bits 0-15 point to the Protection register Lock byte, the first byte in the section. The following bytes are factory pre-programmed and userprogrammable. • bits 0--7 = Lock/bytes Jedec-plane physical low address • bits 8--15 = Lock/bytes Jedec-plane physical high address • bits 16--23 = n such that 2 n = factory pre-programmed bytes • bits 24--31 = n such that 2n = user programmable bytes Add. 47: Hex Code --01 Value 1 (P+F)h (P+10)h (P+11)h (P+12)h 4 48: 49: 4A: 4B: --80 --00 --03 --03 80h 00h 8 byte 8 byte Table 41: Burst Read Information for Non-Multiplexed Flash Device Offset P = 39h (P+13)h (1) Length 1 (P+14)h (P+15)h 1 1 (P+16)h (P+17)h (P+18)h 1 1 1 Description (Optional flash features and commands) Page Mode Read capability bits 0–7 = “n” such that 2n HEX value represents the number of read-page bytes. See offset 28h for device word width to determine page-mode data output width. 00h indicates no read page buffer. Number of synchronous mode read configuration fields that follow. 00h indicates no burst capability. Synchronous mode read capability configuration 1 Bits 3–7 = Reserved bits 0–2 “n” such that 2n+1 HEX value represents the maximum number of continuous synchronous reads when the device is configured for its maximum word width. A value of 07h indicates that the device is capable of continuous linear bursts that will output data until the internal burst counter reaches the end of the device’s burstable address space. This field’s 3-bit value can be written directly to the Read Configuration Register bits 0–2 if the device is configured for its maximum word width. See offset 28h for word width to determine the burst data output width. Synchronous mode read capability configuration 2 Synchronous mode read capability configuration 3 Synchronous mode read capability configuration 4 Hex Add. Code Value 4C: --03 8 byte 4D: 4E: --04 --01 4 4 4F: 50: 51: --02 --03 --07 8 16 Cont Table 42: Partition and Erase-Block Region Information Offset P = 39h Description Bottom (Optional flash features and commands) Top (P+19)h (P+19)h Number of device hardware-partition regions within the device. x = 0: a single hardware partition device (no fields follow). x specifies the number of device partition regions containing one or more contiguous erase block regions. (1) See table below Address Bot Top Len 1 52: 52: November 2007 Order Number: 290702-13 Datasheet 95 Numonyx™ Numonyx™ Wireless Flash Memory (W30) Table 43: Partition Region 1 Information Offset P = 39h Description Bottom Top (Optional flash features and commands) (P+1A)h (P+1A)h Number of identical partitions within the partition region (P+1B)h (P+1B)h (P+1C)h (P+1C)h Number of program or erase operations allowed in a partition bits 0–3 = number of simultaneous Program operations bits 4–7 = number of simultaneous Erase operations (P+1D)h (P+1D)h Simultaneous program or erase operations allowed in other partitions while a partition in this region is in Program mode bits 0–3 = number of simultaneous Program operations bits 4–7 = number of simultaneous Erase operations (P+1E)h (P+1E)h Simultaneous program or erase operations allowed in other partitions while a partition in this region is in Erase mode bits 0–3 = number of simultaneous Program operations bits 4–7 = number of simultaneous Erase operations (P+1F)h (P+1F)h Types of erase block regions in this Partition Region. x = 0 = no erase blocking; the Partition Region erases in bulk x = number of erase block regions w/ contiguous same-size erase blocks. Symmetrically blocked partitions have one blocking region. Partition size = (Type 1 blocks)x(Type 1 block sizes) + (Type 2 blocks)x(Type 2 block sizes) +…+ (Type n blocks)x(Type n block sizes) (P+20)h (P+20)h Partition Region 1 Erase Block Type 1 Information (P+21)h (P+21)h bits 0–15 = y, y+1 = number of identical-size erase blocks (P+22)h (P+22)h bits 16–31 = z, region erase block(s) size are z x 256 bytes (P+23)h (P+23)h (P+24)h (P+24)h Partition 1 (Erase Block Type 1) Minimum block erase cycles x 1000 (P+25)h (P+25)h (P+26)h (P+26)h Partition 1 (erase block Type 1) bits per cell; internal ECC bits 0–3 = bits per cell in erase region bit 4 = reserved for “internal ECC used” (1=yes, 0=no) bits 5–7 = reserve for future use (P+27)h (P+27)h Partition 1 (erase block Type 1) page mode and synchronous mode capabilities defined in Table 10. bit 0 = page-mode host reads permitted (1=yes, 0=no) bit 1 = synchronous host reads permitted (1=yes, 0=no) bit 2 = synchronous host writes permitted (1=yes, 0=no) bits 3–7 = reserved for future use (P+28)h Partition Region 1 Erase Block Type 2 Information (P+29)h bits 0–15 = y, y+1 = number of identical-size erase blocks (P+2A)h bits 16–31 = z, region erase block(s) size are z x 256 bytes (P+2B)h (bottom parameter device only) (P+2C)h Partition 1 (Erase block Type 2) (P+2D)h Minimum block erase cycles x 1000 (P+2E)h Partition 1 (Erase block Type 2) bits per cell bits 0–3 = bits per cell in erase region bit 4 = reserved for “internal ECC used” (1=yes, 0=no) bits 5–7 = reserve for future use (P+2F)h Partition 1 (Erase block Type 2) pagemode and synchronous mode capabilities defined in Table 10 bit 0 = page-mode host reads permitted (1=yes, 0=no) bit 1 = synchronous host reads permitted (1=yes, 0=no) bit 2 = synchronous host writes permitted (1=yes, 0=no) bits 3–7 = reserved for future use (1) See table below Address Bot Top Len 2 53: 53: 54: 54: 1 55: 55: 1 56: 56: 1 57: 57: 1 58: 58: 4 2 1 59: 5A: 5B: 5C: 5D: 5E: 5F: 59: 5A: 5B: 5C: 5D: 5E: 5F: 1 60: 60: 4 2 1 61: 62: 63: 64: 65: 66: 67: 1 68: Datasheet 96 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) Table 44: Partition Region 2 Information Offset(1) P = 39h Description Bottom Top (Optional flash features and commands) (P+30)h (P+28)h Number of identical partitions within the partition region (P+31)h (P+29)h (P+32)h (P+2A)h Number of program or erase operations allowed in a partition bits 0–3 = number of simultaneous Program operations bits 4–7 = number of simultaneous Erase operations (P+33)h See table below Address Bot Top Len 2 69: 61: 6A: 62: 1 6B: 63: (P+34)h (P+35)h (P+36)h (P+37)h (P+38)h (P+39)h (P+3A)h (P+3B)h (P+3C)h (P+3D)h (P+3E)h (P+3F)h (P+2B)h Simultaneous program or erase operations allowed in other 1 partitions while a partition in this region is in Program mode bits 0–3 = number of simultaneous Program operations bits 4–7 = number of simultaneous Erase operations (P+2C)h Simultaneous program or erase operations allowed in other 1 partitions while a partition in this region is in Erase mode bits 0–3 = number of simultaneous Program operations bits 4–7 = number of simultaneous Erase operations (P+2D)h Types of erase block regions in this Partition Region. 1 x = 0 = no erase blocking; the Partition Region erases in bulk x = number of erase block regions w/ contiguous same-size erase blocks. Symmetrically blocked partitions have one blocking region. Partition size = (Type 1 blocks)x(Type 1 block sizes) + (Type 2 blocks)x(Type 2 block sizes) +…+ (Type n blocks)x(Type n block sizes) (P+2E)h Partition Region 2 Erase Block Type 1 Information 4 (P+2F)h bits 0–15 = y, y+1 = number of identical-size erase blocks (P+30)h bits 16–31 = z, region erase block(s) size are z x 256 bytes (P+31)h (P+32)h Partition 2 (Erase block Type 1) 2 (P+33)h Minimum block erase cycles x 1000 (P+34)h Partition 2 (Erase block Type 1) bits per cell 1 bits 0–3 = bits per cell in erase region bit 4 = reserved for “internal ECC used” (1=yes, 0=no) bits 5–7 = reserve for future use (P+35)h Partition 2 (erase block Type 1) pagemode and synchronous 1 mode capabilities as defined in Table 10. bit 0 = page-mode host reads permitted (1=yes, 0=no) bit 1 = synchronous host reads permitted (1=yes, 0=no) bit 2 = synchronous host writes permitted (1=yes, 0=no) bits 3–7 = reserved for future use (P+36)h Partition Region 2 Erase Block Type 2 Information 4 (P+37)h bits 0–15 = y, y+1 = number of identical-size erase blocks (P+38)h bits 16–31 = z, region erase block(s) size are z x 256 bytes (P+39)h (P+3A)h Partition 2 (Erase Block Type 2) 2 (P+3B)h Minimum block erase cycles x 1000 (P+3C)h Partition 2 (Erase Block Type 2) bits per cell 1 bits 0–3 = bits per cell in erase region bit 4 = reserved for “internal ECC used” (1=yes, 0=no) bits 5–7 = reserved for future use (P+3D)h Partition 2 (Erase block Type 2) pagemode and synchronous 1 mode capabilities as defined in Table 10. bit 0 = page-mode host reads permitted (1=yes, 0=no) bit 1 = synchronous host reads permitted (1=yes, 0=no) bit 2 = synchronous host writes permitted (1=yes, 0=no) bits 3–7 = reserved for future use (P+3E)h Features Space definitions (Reserved for future use) TBD (P+3F)h Reserved for future use Resv'd 6C: 64: 6D: 65: 6E: 66: 6F: 70: 71: 72: 73: 74: 75: 67: 68: 69: 6A: 6B: 6C: 6D: 76: 6E: 6F: 70: 71: 72: 73: 74: 75: 76: 77: 78: 77: 78: November 2007 Order Number: 290702-13 Datasheet 97 Numonyx™ Numonyx™ Wireless Flash Memory (W30) Table 45: Partition and Erase-Block Region Information Address 52: 53: 54: 55: 56: 57: 58: 59: 5A: 5B: 5C: 5D: 5E: 5F: 60: 61: 62: 63: 64: 65: 66: 67: 68: 69: 6A: 6B: 6C: 6D: 6E: 6F: 70: 71: 72: 73: 74: 75: 76: –B --02 --01 --00 --11 --00 --00 --02 --07 --00 --20 --00 --64 --00 --01 --03 --06 --00 --00 --01 --64 --00 --01 --03 --07 --00 --11 --00 --00 --01 --07 --00 --00 --01 --64 --00 --01 --03 32 Mbit –T --02 --07 --00 --11 --00 --00 --01 --07 --00 --00 --01 --64 --00 --01 --03 --01 --00 --11 --00 --00 --02 --06 --00 --00 --01 --64 --00 --01 --03 --07 --00 --20 --00 --64 --00 --01 --03 –B --02 --01 --00 --11 --00 --00 --02 --07 --00 --20 --00 --64 --00 --01 --03 --06 --00 --00 --01 --64 --00 --01 --03 --0F --00 --11 --00 --00 --01 --07 --00 --00 --01 --64 --00 --01 --03 64Mbit –T --02 --0F --00 --11 --00 --00 --01 --07 --00 --00 --01 --64 --00 --01 --03 --01 --00 --11 --00 --00 --02 --06 --00 --00 --01 --64 --00 --01 --03 --07 --00 --20 --00 --64 --00 --01 --03 128Mbit –B –T --02 --02 --01 --1F --00 --00 --11 --11 --00 --00 --00 --00 --02 --01 --07 --07 --00 --00 --20 --00 --00 --01 --64 --64 --00 --00 --01 --01 --03 --03 --06 --01 --00 --00 --00 --11 --01 --00 --64 --00 --00 --02 --01 --06 --03 --00 --1F --00 --00 --01 --11 --64 --00 --00 --00 --01 --01 --03 --07 --07 --00 --00 --00 --20 --01 --00 --64 --64 --00 --00 --01 --01 --03 --03 Notes: 1. The P variable is a pointer which is defined at CFI offset 15h. 2. TPD - Top parameter device. BPD - Bottom parameter device. 3. Partition: Each partition is 4 Mb in size. It can contain main blocks OR a combination of both main and parameter blocks. 4. Partition Region: Symmetrical partitions form a partition region. — Partition region A. contains all partitions that are made up of main blocks only. — Partition region B. contains the partition that is made up of the parameter and the main blocks. Datasheet 98 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) Appendix C Ordering Information To order samples, obtain datasheets or inquire about any stack combination, please contact your local Numonyx representative. Table 46: 38F Type Stacked Components PF Package Designator 38F Product Line Designator 5070 Product Die/ Density Configuration Char 1 = Flash die #1 Char 2 = Flash die #2 PF = SCSP, RoHS RD = SCSP, Leaded Stacked NOR Flash + RAM Char 3 = RAM die #1 Char 4 = RAM die #2 (See First character applies to Flash die #1 Second character applies to Flash die #2 (See Table 49, “NOR Flash Family Decoder” on page 101 for M0 NOR Flash Product Family Y Voltage/NOR Flash CE# Configuration V= 1.8 V Core and I/O; Separate Chip Enable per die (See 0 Parameter / Mux Configuration B Ballout Identifier 0 Device Details 0= No parameter blocks; NonMux I/O interface (See B= x16D Ballout (See 0= Original released version of this product Table 48, “38F / 48F Density Decoder” on page 100 for details) details) Table 50, “Voltage / NOR Flash CE# Configurati on Decoder” on page 101 for details) for details) Table 51, “Paramete r / Mux Configurati on Decoder” on page 101 Table 5 2, “Ballout Decoder ” on page 10 2 for details) November 2007 Order Number: 290702-13 Datasheet 99 Numonyx™ Numonyx™ Wireless Flash Memory (W30) Table 47: 48F Type Stacked Components PC Package Designator PC = Easy BGA, RoHS RC = Easy BGA, Leaded JS = TSOP, RoHS TE = TSOP, Leaded PF = SCSP, RoHS RD = SCSP, Leaded 48F Product Line Designator 4400 Product Die/ Density Configuration Char 1 = Flash die #1 Char 2 = Flash die #2 Char 3 = Flash die #3 Stacked NOR Flash only Char 4 = Flash die #4 (See First character applies to Flash dies #1 and #2 Second character applies to Flash dies #3 and #4 (See V= 1.8 V Core and 3 V I/O; Virtual Chip Enable (See B= Bottom parameter; Non-Mux I/O interface (See 0= Discrete Ballout (See P0 NOR Flash Product Family V Voltage/NOR Flash CE# Configuration B Parameter / Mux Configuration 0 Ballout Identifier 0 Device Details for details) Table 48, “38F / 48F Density Decoder” on page 100 details) Table 49, “NOR Flash Family Decoder” on page 101 for for details) Table 50, “Voltage / NOR Flash CE# Configurati on Decoder” on page 101 for details) Table 51, “Paramete r / Mux Configurati on Decoder” on page 101 Table 5 2, “Ballout Decoder ” on page 10 2 for details) 0= Original released version of this product Table 48: 38F / 48F Density Decoder Code 0 1 2 3 4 5 6 7 8 9 A B C D E F No Die 32-Mbit 64-Mbit 128-Mbit 256-Mbit 512-Mbit 1-Gbit 2-Gbit 4-Gbit 8-Gbit 16-Gbit 32-Gbit 64-Gbit 128-Gbit 256-Gbit 512-Gbit Flash Density No Die 4-Mbit 8-Mbit 16-Mbit 32-Mbit 64-Mbit 128-Mbit 256-Mbit 512-Mbit 1-Gbit 2-Gbit 4-Gbit 8-Gbit 16-Gbit 32-Gbit 64-Gbit RAM Density Datasheet 100 November 2007 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) Table 49: NOR Flash Family Decoder Code C C3 J3v.D L18 / L30 M18 P30 / P33 W18 / W30 Family Marketing Name Numonyx Advanced+ Boot Block Flash Memory Numonyx Embedded Flash Memory Numonyx StrataFlash® Wireless Memory Numonyx StrataFlash® Cellular Memory Numonyx StrataFalsh® Embedded Memory Numonyx Wireless Flash Memory No Die J L M P W 0(zero) Table 50: Voltage / NOR Flash CE# Configuration Decoder Code Z I/O Voltage (Volt) 3.0 1.8 3.0 3.0 1.8 3.0 3.0 1.8 3.0 Core Voltage (Volt) 1.8 1.8 3.0 1.8 1.8 3.0 1.8 1.8 3.0 CE# Configuration Seperate Chip Enable per die Seperate Chip Enable per die Seperate Chip Enable per die Virtual Chip Enable Virtual Chip Enable Virtual Chip Enable Virtual Address Virtual Address Virtual Address Y X V U T R Q P Table 51: Parameter / Mux Configuration Decoder Code, Mux Identificati on 0 = Non Mux 1 = AD Mux1 2= AAD Mux 3 =Full" AD Mux2 Number of Flash Die Bus Width Flash Die 1 Flash Die 2 Flash Die 3 Flash Die 4 Any NA Notation used for stacks that contain no parameter blocks 1 B = Non Mux C = AD Mux F = "Full" Ad Mux 2 3 4 2 4 X32 X16 Bottom Bottom Bottom Bottom Bottom Bottom Top Bottom Top Bottom Bottom Top Bottom Top Top Top November 2007 Order Number: 290702-13 Datasheet 101 Numonyx™ Numonyx™ Wireless Flash Memory (W30) Table 51: Parameter / Mux Configuration Decoder Code, Mux Identificati on Number of Flash Die 1 T = Non Mux U = AD Mux W = "Full" Ad Mux 2 3 4 2 4 X32 X16 Bus Width Flash Die 1 Top Top Top Top Top Top Flash Die 2 Bottom Top Bottom Top Top Flash Die 3 Bottom Top Bottom Flash Die 4 Bottom Bottom 1. Only Flash is Muxed and RAM is non-Muxed 2. Both Flash and RAM are AD-Muxed Table 52: Ballout Decoder Code 0 (Zero) B C Q U V W Ballout Definition SDiscrete ballout (Easay BGA and TSOP) x16D ballout, 105 ball (x16 NOR + NAND + DRAM Share Bus) x16C ballout, 107 ball (x16 NOR + NAND + PSRAM Share Bus) QUAD/+ ballout, 88 ball (x16 NOR + PSRAM Share Bus) x32SH ballout, 106 ball (x32 NOR only Share Bus) x16SB ballout, 165 ball (x16 NOR / NAND + x16 DRAM Split Bus x48D ballout, 165 ball (x16/x32 NOR + NAND + DRAM Split Bus Datasheet 102 November 2007 Order Number: 290702-13