M29DW640F70ZE6E

M29DW640F 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory Feature summary ■ Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) Asynchronous Page Read mode – Page Width 8 Words – Page Access 25, 30ns – Random Access 60, 70ns Programming time – 10µs per Byte/Word typical – 4 Words / 8 Bytes at-a-time Program Memory blocks – Quadruple Bank Memory Array: 8Mbit+24Mbit+24Mbit+8Mbit – Parameter Blocks (at both Top and Bottom) Dual operations – While Program or Erase in a group of banks (from 1 to 3), Read in any of the other banks Program/Erase Suspend and Resume – Read from any Block during Program Suspend – Read and Program another Block during Erase Suspend Unlock Bypass Program command – Faster Production/Batch Programming VPP/WP pin for Fast Program and Write Protect Temporary Block Unprotection mode Common Flash Interface – 64 bit Security Code Extended Memory Block – Extra block used as security block or to store additional information ■ ■ ■ ■ TSOP48 (N) 12 x 20mm ■ FBGA ■ TFBGA48 (ZE) 6 x 8 mm ■ Low power consumption – Standby and Automatic Standby 100,000 Program/Erase cycles per block Electronic Signature – Manufacturer Code: 0020h – Device Code: 227Eh + 2202h + 2201 ECOPACK® packages available ■ ■ ■ ■ ■ ■ ■ December 2007 Rev 4 1/74 www.numonyx.com 1 Contents M29DW640F Contents 1 2 Summary description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 2.10 2.11 2.12 2.13 Address Inputs (A0-A21) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Data Inputs/Outputs (DQ0-DQ7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Data Inputs/Outputs (DQ8-DQ14) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Data Input/Output or Address Input (DQ15A–1) . . . . . . . . . . . . . . . . . . . 13 Chip Enable (E) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Output Enable (G) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Write Enable (W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 VPP/Write Protect (VPP/WP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Reset/Block Temporary Unprotect (RP) . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Ready/Busy Output (RB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Byte/Word Organization Select (BYTE) . . . . . . . . . . . . . . . . . . . . . . . . . . 15 VCC Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 VSS Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 3 Bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 3.1 3.2 3.3 3.4 3.5 3.6 Bus Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Bus Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Output Disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Standby . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Automatic Standby . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Special bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 3.6.1 3.6.2 Electronic Signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Block Protect and Chip Unprotect . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 4 Command interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4.1 Standard commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4.1.1 4.1.2 4.1.3 Read/Reset command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Auto Select command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Read CFI Query command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 2/74 M29DW640F 4.1.4 4.1.5 4.1.6 4.1.7 4.1.8 4.1.9 4.1.10 Contents Chip Erase command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Block Erase command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Erase Suspend command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Erase Resume command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Program Suspend command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Program Resume command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 4.2 Fast Program commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 4.2.1 4.2.2 4.2.3 4.2.4 4.2.5 4.2.6 4.2.7 4.2.8 Double Word Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Quadruple Word Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Double Byte Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Quadruple Byte Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Octuple Byte Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Unlock Bypass command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Unlock Bypass Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Unlock Bypass Reset command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 4.3 Block Protection commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 4.3.1 4.3.2 4.3.3 Enter Extended Block command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Exit Extended Block command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Block Protect and Chip Unprotect commands . . . . . . . . . . . . . . . . . . . . 29 5 Status register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 5.1 Data Polling Bit (DQ7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 5.1.1 5.1.2 5.1.3 5.1.4 Toggle Bit (DQ6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Error Bit (DQ5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Erase Timer Bit (DQ3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Alternative Toggle Bit (DQ2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 6 7 8 9 10 Dual operations and multiple bank architecture . . . . . . . . . . . . . . . . . 36 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 3/74 Contents M29DW640F Appendix A Block addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 Appendix B Common Flash Interface (CFI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 Appendix C Extended Memory Block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 C.1 C.2 Factory Locked Extended Block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 Customer Lockable Extended Block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 Appendix D Block protection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67 D.1 D.2 Programmer technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67 In-System technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73 4/74 M29DW640F List of tables List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Table 13. Table 14. Table 15. Table 16. Table 17. Table 18. Table 19. Table 20. Table 21. Table 22. Table 23. Table 24. Table 25. Table 26. Table 27. Table 28. Table 29. Table 30. Table 31. Table 32. Table 33. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Bank architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Hardware protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Bus operations, BYTE = VIL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Bus operations, BYTE = VIH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Commands, 16-bit mode, BYTE = VIH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Commands, 8-bit mode, BYTE = VIL. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Program, Erase times and Program, Erase Endurance cycles. . . . . . . . . . . . . . . . . . . . . . 31 Status Register Bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Dual operations allowed in other banks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 Dual operations allowed in same bank . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 Operating and AC measurement conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 Device capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 DC characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Read AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 Write AC characteristics, Write Enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 Write AC characteristics, Chip Enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 Toggle and Alternative Toggle Bits AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 Reset/Block Temporary Unprotect AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 TSOP48 – 48 lead Plastic Thin Small Outline, 12 x 20mm, package mechanical data . . . 52 TFBGA48 6x8mm - 6x8 active ball array, 0.8mm pitch, package mechanical data . . . . . . 53 Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 Block addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 Query structure overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 CFI Query Identification String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 CFI Query System Interface Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61 Device Geometry Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62 Primary Algorithm-specific Extended Query table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63 Security Code Area. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64 Extended Block address and data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66 Programmer technique bus operations, BYTE = VIH or VIL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68 Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73 5/74 List of figures M29DW640F List of figures Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. Figure 21. Figure 22. Figure 23. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 TSOP connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 TFBGA48 connections (top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Block addresses (x8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Block addresses (x16) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Data Polling flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Toggle flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 AC measurement I/O waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 AC measurement Load Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Random Read AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 Page Read AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 Write AC waveforms, Write Enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 Write AC waveforms, Chip Enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 Toggle and Alternative Toggle Bits mechanism, Chip Enable controlled . . . . . . . . . . . . . . 49 Toggle and Alternative Toggle Bits mechanism, Output Enable controlled . . . . . . . . . . . . 49 Reset/Block Temporary Unprotect AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 Accelerated Program Timing waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 TSOP48 – 48 lead Plastic Thin Small Outline, 12 x 20mm, package outline . . . . . . . . . . . 52 TFBGA48 6x8mm - 6x8 active ball array, 0.8mm pitch, package outline . . . . . . . . . . . . . . 53 Programmer Equipment Group Protect flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69 Programmer Equipment Chip Unprotect flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 In-System Equipment Group Protect flowchart. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71 In-System Equipment Chip Unprotect flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72 6/74 M29DW640F Summary description 1 Summary description The M29DW640F is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical block architecture, with 16 parameter and 126 main blocks, divided into four Banks, A, B, C and D, providing multiple Bank operations. While programming or erasing is underway in one group of banks (from 1 to 3), reading can be conducted in any of the other banks. The bank architecture is summarized in Table 2. Eight of the Parameter Blocks are at the top of the memory address space, and eight are at the bottom. The M29DW640F has one extra 256 Byte block (Extended Block) that can be accessed using a dedicated command. The Extended Block can be protected and so is useful for storing security information. However the protection is irreversible, once protected the protection cannot be undone. Each block can be erased independently, so it is possible to preserve valid data while old data is erased. The blocks can be protected to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards. Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory. They allow simple connection to most microprocessors, often without additional logic. The memory is offered in TSOP48 (12x20mm), and TFBGA48 (6x8mm, 0.8mm pitch) packages. In order to meet environmental requirements, Numonyx also offers the in ECOPACK® packages. ECOPACK packages are Lead-free. The category of second Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. The memory is supplied with all the bits erased (set to ’1’). 7/74 Summary description Figure 1. Logic diagram VCC VPP/WP M29DW640F 22 A0-A21 W E G RP BYTE M29DW640F 15 DQ0-DQ14 DQ15A–1 RB VSS AI11247 Table 1. A0-A21 DQ0-DQ7 DQ8-DQ14 DQ15A–1 E G W RP RB BYTE VCC VPP/WP VSS NC Signal names Address Inputs Data Inputs/Outputs Data Inputs/Outputs Data Input/Output or Address Input Chip Enable Output Enable Write Enable Reset/Block Temporary Unprotect Ready/Busy Output Byte/Word Organization Select Supply voltage VPP/Write Protect Ground Not Connected Internally 8/74 M29DW640F Figure 2. TSOP connections Summary description A15 A14 A13 A12 A11 A10 A9 A8 A19 A20 W RP A21 VPP/WP RB A18 A17 A7 A6 A5 A4 A3 A2 A1 1 48 12 37 M29DW640F 13 36 24 25 A16 BYTE VSS DQ15A–1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 G VSS E A0 AI11248 9/74 Summary description Figure 3. TFBGA48 connections (top view through package) 1 2 3 4 5 6 M29DW640F A A3 A7 RB W A9 A13 B A4 A17 VPP/WP RP A8 A12 C A2 A6 A18 A21 A10 A14 D A1 A5 A20 A19 A11 A15 E A0 DQ0 DQ2 DQ5 DQ7 A16 F E DQ8 DQ10 DQ12 DQ14 BYTE G G DQ9 DQ11 VCC DQ13 DQ15 A–1 H VSS DQ1 DQ3 DQ4 DQ6 VSS AI11 1. Balls are shorted together via the substrate but not connected to the die. Table 2. Bank A B C D Bank architecture Bank Size 8 Mbit 24 Mbit 24 Mbit 8 Mbit Parameter Blocks No. of Blocks 8 — — 8 Block Size 8KByte/ 4 KWord — — 8KByte/ 4 KWord Main Blocks No. of Blocks 15 48 48 15 Block Size 64KByte/ 32 KWord 64KByte/ 32 KWord 64KByte/ 32 KWord 64KByte/ 32 KWord 10/74 M29DW640F Figure 4. Block addresses (x8) (x8) Address lines A21-A0, DQ15A-1 Summary description 000000h 001FFFh 8 KByte or 4 KWord Total of 8 Parameter Blocks 400000h 40FFFFh Bank C 64 KByte or 32 KWord Total of 48 Main Blocks 00E000h Bank A 00FFFFh 010000h 01FFFFh 8 KByte or 4 KWord 64 KByte or 32 KWord Total of 15 Main Blocks 6F0000h 6FFFFFh 700000h 70FFFFh 64 KByte or 32 KWord 64 KByte or 32 KWord Total of 15 Main Blocks 0F0000h 0FFFFFh 100000h 10FFFFh Bank B 64 KByte or 32 KWord Bank D 64 KByte or 32 KWord Total of 48 Main Blocks 7E0000h 7EFFFFh 7F0000h 7F1FFFh 64 KByte or 32 KWord 8 KByte or 4 KWord Total of 8 Parameter Blocks 3F0000h 3FFFFFh 64 KByte or 32 KWord 7FE000h 7FFFFFh 8 KByte or 4 KWord AI06880 1. Also see Appendix A, Table 24 for a full listing of the Block addresses. 11/74 Summary description Figure 5. Block addresses (x16) (x16) Address lines A21-A0 M29DW640F 000000h 000FFFh 8 KByte or 4 KWord Total of 8 Parameter Blocks 200000h 207FFFh Bank C 64 KByte or 32 KWord Total of 48 Main Blocks 007000h Bank A 007FFFh 008000h 00FFFFh 8 KByte or 4 KWord 64 KByte or 32 KWord Total of 15 Main Blocks 378000h 37FFFFh 380000h 387FFFh 64 KByte or 32 KWord 64 KByte or 32 KWord Total of 15 Main Blocks 078000h 07FFFFh 080000h 087FFFh Bank B 64 KByte or 32 KWord Bank D 64 KByte or 32 KWord Total of 48 Main Blocks 3F0000h 3F7FFFh 3F8000h 3F8FFFh 64 KByte or 32 KWord 8 KByte or 4 KWord Total of 8 Parameter Blocks 1F8000h 1FFFFFh 64 KByte or 32 KWord 3FF000h 3FFFFFh 8 KByte or 4 KWord AI05555 1. Also see Appendix A, Table 24 for a full listing of the Block addresses. 12/74 M29DW640F Signal descriptions 2 Signal descriptions See Figure 1: Logic diagram, and Table 1: Signal names, for a brief overview of the signals connected to this device. 2.1 Address Inputs (A0-A21) The Address Inputs select the cells in the memory array to access during Bus Read operations. During Bus Write operations they control the commands sent to the Command Interface of the internal state machine. 2.2 Data Inputs/Outputs (DQ0-DQ7) The Data I/O outputs the data stored at the selected address during a Bus Read operation. During Bus Write operations they represent the commands sent to the Command Interface of the internal state machine. 2.3 Data Inputs/Outputs (DQ8-DQ14) The Data I/O outputs the data stored at the selected address during a Bus Read operation when BYTE is High, VIH. When BYTE is Low, VIL, these pins are not used and are high impedance. During Bus Write operations the Command Register does not use these bits. When reading the Status Register these bits should be ignored. 2.4 Data Input/Output or Address Input (DQ15A–1) When BYTE is High, VIH, this pin behaves as a Data Input/Output pin (as DQ8-DQ14). When BYTE is Low, VIL, this pin behaves as an address pin; DQ15A–1 Low will select the LSB of the addressed Word, DQ15A–1 High will select the MSB. Throughout the text consider references to the Data Input/Output to include this pin when BYTE is High and references to the Address Inputs to include this pin when BYTE is Low except when stated explicitly otherwise. 2.5 Chip Enable (E) The Chip Enable, E, activates the memory, allowing Bus Read and Bus Write operations to be performed. When Chip Enable is High, VIH, all other pins are ignored. 2.6 Output Enable (G) The Output Enable, G, controls the Bus Read operation of the memory. 13/74 Signal descriptions M29DW640F 2.7 Write Enable (W) The Write Enable, W, controls the Bus Write operation of the memory’s Command Interface. 2.8 VPP/Write Protect (VPP/WP) The VPP/Write Protect pin provides two functions. The VPP function allows the memory to use an external high voltage power supply to reduce the time required for Program operations. This is achieved by bypassing the unlock cycles and/or using the multiple Word (2 or 4 at-a-time) or multiple Byte Program (2, 4 or 8 at-a-time) commands. The Write Protect function provides a hardware method of protecting the four outermost boot blocks (two at the top, and two at the bottom of the address space). When VPP/Write Protect is Low, VIL, the memory protects the four outermost boot blocks; Program and Erase operations in these blocks are ignored while VPP/Write Protect is Low, even when RP is at VID. When VPP/Write Protect is High, VIH, the memory reverts to the previous protection status of the four outermost boot blocks (two at the top, and two at the bottom of the address space). Program and Erase operations can now modify the data in these blocks unless the blocks are protected using Block Protection. Applying VPPH to the VPP/WP pin will temporarily unprotect any block previously protected (including the four outermost parameter blocks) using a High Voltage Block Protection technique (In-System or Programmer technique). See Table 3: Hardware protection for details. When VPP/Write Protect is raised to VPP the memory automatically enters the Unlock Bypass mode. When VPP/Write Protect returns to VIH or VIL normal operation resumes. During Unlock Bypass Program operations the memory draws IPP from the pin to supply the programming circuits. See the description of the Unlock Bypass command in the Command Interface section. The transitions from VIH to VPP and from VPP to VIH must be slower than tVHVPP, see Figure 17. Never raise VPP/Write Protect to VPP from any mode except Read mode, otherwise the memory may be left in an indeterminate state. The VPP/Write Protect pin must not be left floating or unconnected or the device may become unreliable. A 0.1µF capacitor should be connected between the VPP/Write Protect pin and the VSS Ground pin to decouple the current surges from the power supply. The PCB track widths must be sufficient to carry the currents required during Unlock Bypass Program, IPP. Table 3. VPP/WP Hardware protection RP VIH VID Function 4 outermost parameter blocks protected from Program/Erase operations All blocks temporarily unprotected except the 4 outermost blocks All blocks temporarily unprotected All blocks temporarily unprotected VIL VIH or VID VPPH VID VIH or VID 14/74 M29DW640F Signal descriptions 2.9 Reset/Block Temporary Unprotect (RP) The Reset/Block Temporary Unprotect pin can be used to apply a Hardware Reset to the memory or to temporarily unprotect all Blocks that have been protected. Note that if VPP/WP is at VIL, then the four outermost boot blocks will remain protected even if RP is at VID. A Hardware Reset is achieved by holding Reset/Block Temporary Unprotect Low, VIL, for at least tPLPX. After Reset/Block Temporary Unprotect goes High, VIH, the memory will be ready for Bus Read and Bus Write operations after tPHEL or tRHEL, whichever occurs last. See the Ready/Busy Output section, Table 20 and Figure 16: Reset/Block Temporary Unprotect AC waveforms. Holding RP at VID will temporarily unprotect the protected Blocks in the memory. Program and Erase operations on all blocks will be possible. The transition from VIH to VID must be slower than tPHPHH. 2.10 Ready/Busy Output (RB) The Ready/Busy pin is an open-drain output that can be used to identify when the device is performing a Program or Erase operation. During Program or Erase operations Ready/Busy is Low, VOL. Ready/Busy is high-impedance during Read mode, Auto Select mode and Erase Suspend mode. After a Hardware Reset, Bus Read and Bus Write operations cannot begin until Ready/Busy becomes high-impedance. See Table 20 and Figure 16: Reset/Block Temporary Unprotect AC waveforms. The use of an open-drain output allows the Ready/Busy pins from several memories to be connected to a single pull-up resistor. A Low will then indicate that one, or more, of the memories is busy. 2.11 Byte/Word Organization Select (BYTE) The Byte/Word Organization Select pin is used to switch between the x8 and x16 Bus modes of the memory. When Byte/Word Organization Select is Low, VIL, the memory is in x8 mode, when it is High, VIH, the memory is in x16 mode. 2.12 VCC Supply Voltage VCC provides the power supply for all operations (Read, Program and Erase). The Command Interface is disabled when the VCC Supply Voltage is less than the Lockout voltage, VLKO. This prevents Bus Write operations from accidentally damaging the data during power up, power down and power surges. If the Program/Erase Controller is programming or erasing during this time then the operation aborts and the memory contents being altered will be invalid. A 0.1µF capacitor should be connected between the VCC Supply Voltage pin and the VSS Ground pin to decouple the current surges from the power supply. The PCB track widths must be sufficient to carry the currents required during Program and Erase operations, ICC3. 15/74 Signal descriptions M29DW640F 2.13 VSS Ground VSS is the reference for all voltage measurements. The device features two VSS pins both of which must be connected to the system ground. 16/74 M29DW640F Bus operations 3 Bus operations There are five standard bus operations that control the device. These are Bus Read (Random and Page modes), Bus Write, Output Disable, Standby and Automatic Standby. Using the multiple bank architecture of the M29DW640F, while programming or erasing is underway in one group of banks (from 1 to 3), reading can be conducted in any of the other banks. Write operations are only allowed in one bank at a time. See Table 4 and Table 5, Bus operations, for a summary. Typically glitches of less than 5ns on Chip Enable, Write Enable, and Reset pins are ignored by the memory and do not affect bus operations. 3.1 Bus Read Bus Read operations read from the memory cells, or specific registers in the Command Interface. To speed up the read operation the memory array can be read in Page mode where data is internally read and stored in a page buffer. The Page has a size of 8 Words and is addressed by the address inputs A0-A2. A valid Bus Read operation involves setting the desired address on the Address Inputs, applying a Low signal, VIL, to Chip Enable and Output Enable and keeping Write Enable High, VIH. The Data Inputs/Outputs will output the value, see Figure 10: Random Read AC waveforms, Figure 11: Page Read AC waveforms, and Table 16: Read AC characteristics, for details of when the output becomes valid. 3.2 Bus Write Bus Write operations write to the Command Interface. A valid Bus Write operation begins by setting the desired address on the Address Inputs. The Address Inputs are latched by the Command Interface on the falling edge of Chip Enable or Write Enable, whichever occurs last. The Data Inputs/Outputs are latched by the Command Interface on the rising edge of Chip Enable or Write Enable, whichever occurs first. Output Enable must remain High, VIH, during the whole Bus Write operation. See Figure 12 and Figure 13, Write AC waveforms, and Table 17 and Table 18, Write AC characteristics, for details of the timing requirements. 3.3 Output Disable The Data Inputs/Outputs are in the high impedance state when Output Enable is High, VIH. 3.4 Standby When Chip Enable is High, VIH, the memory enters Standby mode and the Data Inputs/Outputs pins are placed in the high-impedance state. To reduce the Supply Current to the Standby Supply Current, ICC2, Chip Enable should be held within VCC ± 0.2V. For the Standby current level see Table 15: DC characteristics. During program or erase operations the memory will continue to use the Program/Erase Supply Current, ICC3, for Program or Erase operations until the operation completes. 17/74 Bus operations M29DW640F 3.5 Automatic Standby If CMOS levels (VCC ± 0.2V) are used to drive the bus and the bus is inactive for 300ns or more the memory enters Automatic Standby where the internal Supply Current is reduced to the Standby Supply Current, ICC2. The Data Inputs/Outputs will still output data if a Bus Read operation is in progress. 3.6 Special bus operations Additional bus operations can be performed to read the Electronic Signature and also to apply and remove Block Protection. These bus operations are intended for use by programming equipment and are not usually used in applications. They require VID to be applied to some pins. 3.6.1 Electronic Signature The memory has two codes, the manufacturer code and the device code, that can be read to identify the memory. These codes can be read by applying the signals listed in Table 4 and Table 5, Bus operations. 3.6.2 Block Protect and Chip Unprotect Groups of blocks can be protected against accidental Program or Erase. The Protection Groups are shown in Appendix A, Table 24: Block addresses The whole chip can be unprotected to allow the data inside the blocks to be changed. The VPP/Write Protect pin can be used to protect the four outermost boot blocks. When VPP/Write Protect is at VIL the four outermost boot blocks are protected and remain protected regardless of the Block Protection Status or the Reset/Block Temporary Unprotect pin status. Block Protect and Chip Unprotect operations are described in Appendix D. 18/74 M29DW640F Table 4. Bus operations, BYTE = VIL(1) Address Inputs Operation E G W A21A12 A3 A2 A1 A0 Bus operations Data Inputs/Outputs Others, DQ14 DQ15A-1 -DQ8 Hi-Z Hi-Z Hi-Z Hi-Z DQ7-DQ0 Data Output Data Input Hi-Z Hi-Z 20h 7Eh 02h 01h 80h (factory locked) 00h (not locked) 01h (protected) 00h (unprotected) Bus Read Bus Write Output Disable Standby Read Manufacturer Code Read Device Code (Cycle 1) Read Device Code (Cycle 2) Read Device Code (Cycle 3) Extended Block Indicator Bit (DQ7) Block Protection Verification 1. X = VIL or VIH. VIL VIL X VIH VIL VIL VIL VIL VIL VIH VIH X VIL VIL VIL VIL VIH VIL VIH X VIH VIH Bank addrs VIH VIH Bank A Block addrs VIH VIH VIL VIL Cell address Command address X X VIL VIL VIH VIH VIL VIL VIH VIH VIL VIH VIL VIH Hi-Z Hi-Z Hi-Z A6 = VIL A9 = VID, others =X Hi-Z VIL VIL VIH VIL VIL VIH VIH Hi-Z VIL VIL VIH VIL VIL VIH VIL Hi-Z 19/74 Bus operations Table 5. Bus operations, BYTE = VIH (1) Address Inputs Operation E G W A21A12 A3 A2 A1 A0 Others M29DW640F Data Inputs/Outputs DQ15A-1, DQ14-DQ0 Data Output Data Input Hi-Z Hi-Z Bus Read Bus Write Output Disable Standby Read Manufacturer Code Read Device Code (Cycle 1) Read Device Code (Cycle 2) Read Device Code (Cycle 3) Extended Block Indicator Bit (DQ7) Block Protection Verification 1. X = VIL or VIH. VIL VIL X VIH VIL VIL VIL VIL VIL VIH VIH X VIL VIL VIL VIL VIH VIL VIH X VIH VIH Bank addrs VIH VIH Bank A Block addrs VIH VIH VIL VIL Cell address Command address X X VIL VIL VIH VIH VIL VIL VIH VIH VIL VIH VIL VIH 0020h 227Eh 2202h A6 = VIL A9 = VID, others =X 2201h 0080h (factory locked) 0000h (not locked) 0001h (protected) 0000h (unprotected) VIL VIL VIH VIL VIL VIH VIH VIL VIL VIH VIL VIL VIH VIL 20/74 M29DW640F Command interface 4 Command interface All Bus Write operations to the memory are interpreted by the Command Interface. Commands consist of one or more sequential Bus Write operations. Failure to observe a valid sequence of Bus Write operations will result in the memory returning to Read mode. The long command sequences are imposed to maximize data security. The address used for the commands changes depending on whether the memory is in 16bit or 8-bit mode. See either Table 6, or Table 7, depending on the configuration that is being used, for a summary of the commands. 4.1 4.1.1 Standard commands Read/Reset command The Read/Reset command returns the memory to its Read mode. It also resets the errors in the Status Register. Either one or three Bus Write operations can be used to issue the Read/Reset command. The Read/Reset command can be issued, between Bus Write cycles before the start of a program or erase operation, to return the device to read mode. If the Read/Reset command is issued during the timeout of a Block erase operation then the memory will take up to 10µs to abort. During the abort period no valid data can be read from the memory. The Read/Reset command will not abort an Erase operation when issued while in Erase Suspend. 4.1.2 Auto Select command The Auto Select command is used to read the Manufacturer Code and Device Code, the Block Protection Status and the Extended Block Indicator. It can be addressed to either Bank. Three consecutive Bus Write operations are required to issue the Auto Select command. The final Write cycle must be addressed to one of the Banks. Once the Auto Select command is issued Bus Read operations to the Bank where the command was issued output the Auto Select data. Bus Read operations to the other Bank will output the contents of the memory array. The memory remains in Auto Select mode until a Read/Reset or CFI Query command is issued. This command must be issued addressing the same Bank, as was given when entering Auto Select Mode. In Auto Select mode the Manufacturer Code can be read using a read operation, A6 and A3 to A0 each held at VIL, and A21-A19 set to the Bank Address. The other address bits may be set to either VIL or VIH. The Device Codes can be read using a read operation, A6 held at VIL, A3 to A0 each held at the levels given in Table 4 and Table 5, and A21-A19 set to the Bank Address. The other address bits may be set to either VIL or VIH. The Block Protection Status of each block can be read using a read operation, A6 A3 A2 A0 each held at VIL, A1 held at VIH, and A21-A19 set to the Bank Address, and A18-A12 specifying the address of the block inside the Bank. The other address bits may be set to either VIL or VIH. If the addressed block is protected then 01h is output on Data Inputs/Outputs DQ0-DQ7, otherwise 00h is output. 21/74 Command interface M29DW640F The Extended Block Status of the Extended Block can be read using a read operation, A6, A3 and A2, at VIL, A0 and A1, at VIH, and A21-A19 set to Bank Address A. The other bits may be set to either VIL or VIH (Don't Care). If the Extended Block is "Factory Locked" then 80h is output on Data Input/Outputs DQ0-DQ7, otherwise 00h is output. 4.1.3 Read CFI Query command The Read CFI Query Command is used to put the addressed bank in Read CFI Query mode. Once in Read CFI Query mode Bus Read operations to the same bank will output data from the Common Flash Interface (CFI) Memory Area. If the read operations are to a different bank from the one specified in the command then the read operations will output the contents of the memory array and not the CFI data. One Bus Write cycle is required to issue the Read CFI Query Command. Care must be taken to issue the command to one of the banks (A21-A19) along with the address shown in Table 4 and Table 5 (A-1, A0-A10). Once the command is issued subsequent Bus Read operations in the same bank (A21-A19) to the addresses shown in Appendix B (A7-A0), will read from the Common Flash Interface Memory Area. This command is valid only when the device is in the Read Array or Autoselected mode. To enter Read CFI query mode from Auto Select mode, the Read CFI Query command must be issued to the same bank address as the Auto Select command, otherwise the device will not enter Read CFI Query mode. The Read/Reset command must be issued to return the device to the previous mode (the Read Array mode or Autoselected mode). A second Read/Reset command would be needed if the device is to be put in the Read Array mode from Autoselected mode. See Appendix B, Table 25, Table 26, Table 27, Table 28, Table 29 and Table 30 for details on the information contained in the Common Flash Interface (CFI) memory area. 4.1.4 Chip Erase command The Chip Erase command can be used to erase the entire chip. Six Bus Write operations are required to issue the Chip Erase Command and start the Program/Erase Controller. If any blocks are protected then these are ignored and all the other blocks are erased. If all of the blocks are protected the Chip Erase operation appears to start but will terminate within about 100µs, leaving the data unchanged. No error condition is given when protected blocks are ignored. During the erase operation the memory will ignore all commands, including the Erase Suspend command. It is not possible to issue any command to abort the operation. Typical chip erase times are given in Table 8. All Bus Read operations during the Chip Erase operation will output the Status Register on the Data Inputs/Outputs. See the section on the Status Register for more details. After the Chip Erase operation has completed the memory will return to the Read Mode, unless an error has occurred. When an error occurs the memory will continue to output the Status Register. A Read/Reset command must be issued to reset the error condition and return to Read Mode. The Chip Erase Command sets all of the bits in unprotected blocks of the memory to ’1’. All previous data is lost. 22/74 M29DW640F Command interface 4.1.5 Block Erase command The Block Erase command can be used to erase a list of one or more blocks in one or more Banks. It sets all of the bits in the unprotected selected blocks to ’1’. All previous data in the selected blocks is lost. Six Bus Write operations are required to select the first block in the list. Each additional block in the list can be selected by repeating the sixth Bus Write operation using the address of the additional block. The Block Erase operation starts the Program/Erase Controller after a time-out period of 50µs after the last Bus Write operation. Once the Program/Erase Controller starts it is not possible to select any more blocks. Each additional block must therefore be selected within 50µs of the last block. The 50µs timer restarts when an additional block is selected. After the sixth Bus Write operation a Bus Read operation within the same Bank will output the Status Register. See the Status Register section for details on how to identify if the Program/Erase Controller has started the Block Erase operation. If any selected blocks are protected then these are ignored and all the other selected blocks are erased. If all of the selected blocks are protected the Block Erase operation appears to start but will terminate within about 100µs, leaving the data unchanged. No error condition is given when protected blocks are ignored. During the Block Erase operation the memory will ignore all commands except the Erase Suspend command and the Read/Reset command which is only accepted during the 50µs time-out period. Typical block erase times are given in Table 8. After the Erase operation has started all Bus Read operations to the Banks being erased will output the Status Register on the Data Inputs/Outputs. See the section on the Status Register for more details. After the Block Erase operation has completed the memory will return to the Read Mode, unless an error has occurred. When an error occurs Bus Read operations to the Banks where the command was issued will continue to output the Status Register. A Read/Reset command must be issued to reset the error condition and return to Read mode. 4.1.6 Erase Suspend command The Erase Suspend command may be used to temporarily suspend a Block or multiple Block Erase operation. One Bus Write operation specifying the Bank Address of one of the Blocks being erased is required to issue the command. Issuing the Erase Suspend command returns the whole device to Read mode. The Program/Erase Controller will suspend within the Erase Suspend Latency time (see Table 8 for value) of the Erase Suspend Command being issued. Once the Program/Erase Controller has stopped the memory will be set to Read mode and the Erase will be suspended. If the Erase Suspend command is issued during the period when the memory is waiting for an additional block (before the Program/Erase Controller starts) then the Erase is suspended immediately and will start immediately when the Erase Resume Command is issued. It is not possible to select any further blocks to erase after the Erase Resume. During Erase Suspend it is possible to Read and Program cells in blocks that are not being erased; both Read and Program operations behave as normal on these blocks. If any attempt is made to program in a protected block or in the suspended block then the Program command is ignored and the data remains unchanged. The Status Register is not read and no error condition is given. Reading from blocks that are being erased will output the Status Register. 23/74 Command interface M29DW640F It is also possible to issue the Auto Select, Read CFI Query and Unlock Bypass commands during an Erase Suspend. The Read/Reset command must be issued to return the device to Read Array mode before the Resume command will be accepted. During Erase Suspend a Bus Read operation to the Extended Block will output the Extended Block data. Once in the Extended Block mode, the Exit Extended Block command must be issued before the erase operation can be resumed. 4.1.7 Erase Resume command The Erase Resume command is used to restart the Program/Erase Controller after an Erase Suspend. The command must include the Bank Address of the Erase-Suspended Bank, otherwise the Program/Erase Controller is not restarted. The device must be in Read Array mode before the Resume command will be accepted. An Erase can be suspended and resumed more than once. 4.1.8 Program Suspend command The Program Suspend command allows the system to interrupt a program operation so that data can be read from any block. When the Program Suspend command is issued during a program operation, the device suspends the program operation within the Program Suspend Latency time (see Table 8 for value) and updates the Status Register bits. The Bank Addresses of the Block being programmed must be specified in the Program Suspend command. After the program operation has been suspended, the system can read array data from any address. However, data read from Program-Suspended addresses is not valid. The Program Suspend command may also be issued during a program operation while an erase is suspended. In this case, data may be read from any addresses not in Erase Suspend or Program Suspend. If a read is needed from the Extended Block area (One-time Program area), the user must use the proper command sequences to enter and exit this region. The system may also issue the Auto Select command sequence when the device is in the Program Suspend mode. The system can read as many Auto Select codes as required. When the device exits the Auto Select mode, the device reverts to the Program Suspend mode, and is ready for another valid operation. See Auto Select command sequence for more information. 4.1.9 Program Resume command After the Program Resume command is issued, the device reverts to programming. The controller can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard program operation. See Write Operation Status for more information. The system must write the Program Resume command, specifying the Bank addresses of the Program-Suspended Block, to exit the Program Suspend mode and to continue the programming operation. Further issuing of the Resume command is ignored. Another Program Suspend command can be written after the device has resumed programming. 24/74 M29DW640F Command interface 4.1.10 Program command The Program command can be used to program a value to one address in the memory array at a time. The command requires four Bus Write operations, the final Write operation latches the address and data in the internal state machine and starts the Program/Erase Controller. Programming can be suspended and then resumed by issuing a Program Suspend command and a Program Resume command, respectively (see Section 4.1.8: Program Suspend command and Section 4.1.9: Program Resume command). If the address falls in a protected block then the Program command is ignored, the data remains unchanged. The Status Register is never read and no error condition is given. After programming has started, Bus Read operations in the Bank being programmed output the Status Register content, while Bus Read operations to the other Bank output the contents of the memory array. See the section on the Status Register for more details. Typical program times are given in Table 8. After the program operation has completed the memory will return to the Read mode, unless an error has occurred. When an error occurs Bus Read operations to the Bank where the command was issued will continue to output the Status Register. A Read/Reset command must be issued to reset the error condition and return to Read mode. Note that the Program command cannot change a bit set at ’0’ back to ’1’. One of the Erase Commands must be used to set all the bits in a block or in the whole memory from ’0’ to ’1’. 4.2 Fast Program commands There are five Fast Program commands available to improve the programming throughput, by writing several adjacent Words or Bytes in parallel. When VPPH is applied to the VPP/Write Protect pin the memory automatically enters the Fast Program mode. The user can then choose to issue any of the Fast Program commands. Care must be taken because applying a VPPH to the VPP/WP pin will temporarily unprotect any protected block. Fast programming should not be attempted when VPP is not at VPPH. 4.2.1 Double Word Program command This is used to write two adjacent Words in x16 mode, in parallel. The addresses of the two Words must differ only in A0. Three bus write cycles are necessary to issue the command. 1. 2. 3. The first bus cycle sets up the command. The second bus cycle latches the Address and the Data of the first Word to be written. The third bus cycle latches the Address and the Data of the second Word to be written and starts the Program/Erase Controller. 25/74 Command interface M29DW640F 4.2.2 Quadruple Word Program command This is used to write a page of four adjacent Words, in x16 mode, in parallel. The addresses of the four Words must differ only in A1 and A0. Five bus write cycles are necessary to issue the command. 1. 2. 3. 4. 5. The first bus cycle sets up the command. The second bus cycle latches the Address and the Data of the first Word to be written. The third bus cycle latches the Address and the Data of the second Word to be written. The fourth bus cycle latches the Address and the Data of the third Word to be written. The fifth bus cycle latches the Address and the Data of the fourth Word to be written and starts the Program/Erase Controller. 4.2.3 Double Byte Program command This is used to write two adjacent Bytes in x8 mode, in parallel. The addresses of the two Bytes must differ only in DQ15A-1. Three bus write cycles are necessary to issue the command. 1. 2. 3. The first bus cycle sets up the command. The second bus cycle latches the Address and the Data of the first Byte to be written. The third bus cycle latches the Address and the Data of the second Byte to be written and starts the Program/Erase Controller. 4.2.4 Quadruple Byte Program command This is used to write four adjacent Bytes in x8 mode, in parallel. The addresses of the four Bytes must differ only in A0, DQ15A-1. Five bus write cycles are necessary to issue the command. 1. 2. 3. 4. 5. The first bus cycle sets up the command. The second bus cycle latches the Address and the Data of the first Byte to be written. The third bus cycle latches the Address and the Data of the second Byte to be written. The fourth bus cycle latches the Address and the Data of the third Byte to be written. The fifth bus cycle latches the Address and the Data of the fourth Byte to be written and starts the Program/Erase Controller. 26/74 M29DW640F Command interface 4.2.5 Octuple Byte Program command This is used to write eight adjacent Bytes, in x8 mode, in parallel. The addresses of the eight Bytes must differ only in A1, A0 and DQ15A-1. Nine bus write cycles are necessary to issue the command. 1. 2. 3. 4. 5. 6. 7. 8. 9. The first bus cycle sets up the command. The second bus cycle latches the Address and the Data of the first Byte to be written. The third bus cycle latches the Address and the Data of the second Byte to be written. The fourth bus cycle latches the Address and the Data of the third Byte to be written. The fifth bus cycle latches the Address and the Data of the fourth Byte to be written. The sixth bus cycle latches the Address and the Data of the fifth Byte to be written. The seventh bus cycle latches the Address and the Data of the sixth Byte to be written. The eighth bus cycle latches the Address and the Data of the seventh Byte to be written. The ninth bus cycle latches the Address and the Data of the eighth Byte to be written and starts the Program/Erase Controller. Only one bank can be programmed at any one time. The other bank must be in Read mode or Erase Suspend. After programming has started, Bus Read operations in the Bank being programmed output the Status Register content, while Bus Read operations to the other Bank output the contents of the memory array. Programming can be suspended and then resumed by issuing a Program Suspend command and a Program Resume command, respectively. (See Section 4.1.8: Program Suspend command and Section 4.1.9: Program Resume command) After the program operation has completed the memory will return to the Read mode, unless an error has occurred. When an error occurs Bus Read operations to the Bank where the command was issued will continue to output the Status Register. A Read/Reset command must be issued to reset the error condition and return to Read mode. Note that the Fast Program commands cannot change a bit set at ’0’ back to ’1’. One of the Erase Commands must be used to set all the bits in a block or in the whole memory from ’0’ to ’1’. Typical Program times are given in Table 8: Program, Erase times and Program, Erase Endurance cycles. 4.2.6 Unlock Bypass command The Unlock Bypass command is used in conjunction with the Unlock Bypass Program command to program the memory faster than with the standard program commands. When the cycle time to the device is long, considerable time saving can be made by using these commands. Three Bus Write operations are required to issue the Unlock Bypass command. Once the Unlock Bypass command has been issued the bank enters Unlock Bypass mode. The Unlock Bypass Program command can then be issued to program addresses within the bank, or the Unlock Bypass Reset command can be issued to return the bank to Read mode. In Unlock Bypass mode the memory can be read as if in Read mode. 27/74 Command interface M29DW640F When VPP is applied to the VPP/Write Protect pin the memory automatically enters the Unlock Bypass mode and the Unlock Bypass Program command can be issued immediately. 4.2.7 Unlock Bypass Program command The Unlock Bypass Program command can be used to program one address in the memory array at a time. The command requires two Bus Write operations, the final write operation latches the address and data in the internal state machine and starts the Program/Erase Controller. The Program operation using the Unlock Bypass Program command behaves identically to the Program operation using the Program command. The operation cannot be aborted, a Bus Read operation to the Bank where the command was issued outputs the Status Register. See the Program command for details on the behavior. 4.2.8 Unlock Bypass Reset command The Unlock Bypass Reset command can be used to return to Read/Reset mode from Unlock Bypass Mode. Two Bus Write operations are required to issue the Unlock Bypass Reset command. Read/Reset command does not exit from Unlock Bypass Mode. 4.3 4.3.1 Block Protection commands Enter Extended Block command The M29DW640F has one extra 256-Byte block (Extended Block) that can only be accessed using the Enter Extended Block command. Three Bus write cycles are required to issue the Extended Block command. Once the command has been issued the device enters Extended Block mode where all Bus Read or Program operations to the 000000h-00007Fh (Word) or 000000h-0000FFh (Byte) addresses access the Extended Block. The Extended Block cannot be erased, and can be treated as one-time programmable (OTP) memory. In Extended Block mode only array cell locations (Bank A) with the same addresses as the Extended Block (000000h-00007Fh (Word) or 000000h-0000FFh (Byte)) are not accessible. In Extended Block mode dual operations are allowed and the Extended Block physically belongs to Bank A. When in Extended Block mode, Erase, Chip Erase, Erase Suspend and Erase resume commands are not allowed. To exit from the Extended Block mode the Exit Extended Block command must be issued. The Extended Block can be protected, however once protected the protection cannot be undone. 4.3.2 Exit Extended Block command The Exit Extended Block command is used to exit from the Extended Block mode and return the device to Read mode. Four Bus Write operations are required to issue the command. 28/74 M29DW640F Command interface 4.3.3 Block Protect and Chip Unprotect commands Groups of blocks can be protected against accidental Program or Erase. The Protection Groups are shown in Appendix A, Table 24: Block addresses. The whole chip can be unprotected to allow the data inside the blocks to be changed. Block Protect and Chip Unprotect operations are described in Appendix D. Table 6. Commands, 16-bit mode, BYTE = VIH Bus Write operations(1) Command Length 1st Add 1 Read/Reset 3 Auto Select Program Double Word Program Quadruple Word Program Unlock Bypass Unlock Bypass Program Unlock Bypass Reset Chip Erase Block Erase Erase/Program Suspend Erase/Program Resume Read CFI Query(2) Enter Extended Block Exit Extended Block 3 4 3 3 3 2 2 6 6+ 1 1 1 3 4 555 555 555 555 555 555 X X 555 555 BKA BKA (BKA) 55 555 555 AA AA AA 50 56 AA A0 90 AA AA B0 30 98 AA AA 2AA 2AA 55 55 555 555 88 90 X 00 2AA 2AA 2AA PA0 PA0 2AA PA X 2AA 2AA 55 55 55 PD0 PD0 55 PD 00 55 55 555 555 80 80 555 555 AA AA 2AA 2AA 55 55 555 BA 10 30 X (BKA) 555 555 PA1 PA1 555 F0 90 A0 PD1 PD1 20 PA2 PD2 PA3 PD3 PA PD X Data F0 2nd Add Data 3rd Add 4th Data 5th Add 6th Data Data Add Data Add 1. X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block, BKA Bank Address. All values in the table are in hexadecimal. 2. Normally the Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands and A11-A21 are Don’t Care, however for the Read CFI command A21-A14 must specify a bank address, and the subsequent read operations must be addressed to the same bank. 29/74 Command interface Table 7. Commands, 8-bit mode, BYTE = VIL Bus Write operations(1) Length Command 1st Data Add 2nd Data Add 3rd Data Add 4th Data Add Add 5th Data Add 6th Data Add 7th Data Add 8th M29DW640F 9th Data Add Read/Reset 1 3 X F0 X F0 AAA AA 555 55 AAA AA 555 55 AAA AA 555 55 AAA Auto Select 3 Program Double Byte Program Quadruple Byte Program Octuple Byte Program Unlock Bypass Unlock Bypass Program Unlock Bypass Reset Chip Erase 4 3 (BKA) 90 AAA AAA A0 PA PD 50 PA0 PD1 PA1 PD1 5 AAA 56 PA0 PD0 PA1 PD1 PA2 PD2 PA3 PD3 5 AAA 8B PA0 PD0 PA1 PD1 PA2 PD2 PA3 PD3 PA4 PD4 PA5 PD5 PA6 PD6 PA7 PD7 3 AAA AA 555 55 AAA 20 2 X A0 PA PD 2 6 X 90 X 00 AAA AAA 80 AAA AA 555 80 AAA AA 555 55 AAA 10 55 BA 30 AAA AA 555 55 Block Erase 6+ AAA AA 555 55 Erase/ Program Suspend Erase/ Program Resume Read CFI Query(2) Enter Extended Block Exit Extended Block 1. 2. 1 BKA B0 1 BKA 30 1 (BKA) 98 AA AAA AA 555 55 AAA 88 3 4 AAA AA 555 55 AAA 90 X 00 X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in hexadecimal. Normally the Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands and A11-A21 are Don’t Care, however for the Read CFI command A21-A14 must specify a bank address, and the subsequent read operations must be addressed to the same bank. 30/74 Data M29DW640F Table 8. Program, Erase times and Program, Erase Endurance cycles Parameter Chip Erase Block Erase (64 KBytes) Erase Suspend latency time Byte Program (1, 2, 4 or 8 at-a-time) Word Program (1, 2 or 4 at-a-time) Chip Program (Byte by Byte) Chip Program (Word by Word) Chip Program (quadruple Byte or double Word) Chip Program (octuple Byte or quadruple Word) Program Suspend latency time Program/Erase cycles (per Block) Data Retention 1. Typical values measured at room temperature and nominal voltages. 2. Sampled, but not 100% tested. Command interface Min Typ(1)(2) 80 0.8 Max(2) 400 (3) Unit s s µs µs µs s s s s µs cycles years 6(4) 50 (4) 10 10 80 40 20 10 200(3) 200(3) 400(3) 200(3) 100(3) 50(3) 4 100,000 20 3. Maximum value measured at worst case conditions for both temperature and VCC after 100,00 program/erase cycles. 4. Maximum value measured at worst case conditions for both temperature and VCC. 31/74 Status register M29DW640F 5 Status register The M29DW640F has one Status Register. The Status Register provides information on the current or previous Program or Erase operations executed in each bank. The various bits convey information and errors on the operation. Bus Read operations from any address within the Bank, always read the Status Register during Program and Erase operations. It is also read during Erase Suspend when an address within a block being erased is accessed. The bits in the Status Register are summarized in Table 9: Status Register Bits. 5.1 Data Polling Bit (DQ7) The Data Polling Bit can be used to identify whether the Program/Erase Controller has successfully completed its operation or if it has responded to an Erase Suspend. The Data Polling Bit is output on DQ7 when the Status Register is read. During Program operations the Data Polling Bit outputs the complement of the bit being programmed to DQ7. After successful completion of the Program operation the memory returns to Read mode and Bus Read operations from the address just programmed output DQ7, not its complement. During Erase operations the Data Polling Bit outputs ’0’, the complement of the erased state of DQ7. After successful completion of the Erase operation the memory returns to Read Mode. In Erase Suspend mode the Data Polling Bit will output a ’1’ during a Bus Read operation within a block being erased. The Data Polling Bit will change from a ’0’ to a ’1’ when the Program/Erase Controller has suspended the Erase operation. Figure 6: Data Polling flowchart, gives an example of how to use the Data Polling Bit. A Valid Address is the address being programmed or an address within the block being erased. 5.1.1 Toggle Bit (DQ6) The Toggle Bit can be used to identify whether the Program/Erase Controller has successfully completed its operation or if it has responded to an Erase Suspend. The Toggle Bit is output on DQ6 when the Status Register is read. During Program and Erase operations the Toggle Bit changes from ’0’ to ’1’ to ’0’, etc., with successive Bus Read operations at any address. After successful completion of the operation the memory returns to Read mode. During Erase Suspend mode the Toggle Bit will output when addressing a cell within a block being erased. The Toggle Bit will stop toggling when the Program/Erase Controller has suspended the Erase operation. Figure 7: Toggle flowchart, gives an example of how to use the Data Toggle Bit. Figure 14 and Figure 15 describe Toggle Bit timing waveform. 32/74 M29DW640F Status register 5.1.2 Error Bit (DQ5) The Error Bit can be used to identify errors detected by the Program/Erase Controller. The Error Bit is set to ’1’ when a Program, Block Erase or Chip Erase operation fails to write the correct data to the memory. If the Error Bit is set a Read/Reset command must be issued before other commands are issued. The Error bit is output on DQ5 when the Status Register is read. Note that the Program command cannot change a bit set to ’0’ back to ’1’ and attempting to do so will set DQ5 to ‘1’. A Bus Read operation to that address will show the bit is still ‘0’. One of the Erase commands must be used to set all the bits in a block or in the whole memory from ’0’ to ’1’. 5.1.3 Erase Timer Bit (DQ3) The Erase Timer Bit can be used to identify the start of Program/Erase Controller operation during a Block Erase command. Once the Program/Erase Controller starts erasing the Erase Timer Bit is set to ’1’. Before the Program/Erase Controller starts the Erase Timer Bit is set to ’0’ and additional blocks to be erased may be written to the Command Interface. The Erase Timer Bit is output on DQ3 when the Status Register is read. 5.1.4 Alternative Toggle Bit (DQ2) The Alternative Toggle Bit can be used to monitor the Program/Erase controller during Erase operations. The Alternative Toggle Bit is output on DQ2 when the Status Register is read. During Chip Erase and Block Erase operations the Toggle Bit changes from ’0’ to ’1’ to ’0’, etc., with successive Bus Read operations from addresses within the blocks being erased. A protected block is treated the same as a block not being erased. Once the operation completes the memory returns to Read mode. During Erase Suspend the Alternative Toggle Bit changes from ’0’ to ’1’ to ’0’, etc. with successive Bus Read operations from addresses within the blocks being erased. Bus Read operations to addresses within blocks not being erased will output the memory cell data as if in Read mode. After an Erase operation that causes the Error Bit to be set the Alternative Toggle Bit can be used to identify which block or blocks have caused the error. The Alternative Toggle Bit changes from ’0’ to ’1’ to ’0’, etc. with successive Bus Read Operations from addresses within blocks that have not erased correctly. The Alternative Toggle Bit does not change if the addressed block has erased correctly. Figure 14 and Figure 15 describe Alternative Toggle Bit timing waveform. 33/74 Status register Table 9. Status Register Bits Address Bank address Bank address Bank address Any address Erasing block Non-Erasing block Erasing block Block Erase Non-Erasing block Erasing block Erase Suspend Non-Erasing block Good Block address Erase Error Faulty Block address 1. Unspecified data bits should be ignored. 1. Figure 14 and Figure 15 describe Toggle and Alternative Toggle Bits timing waveforms. M29DW640F Operation Program Program During Erase Suspend Program Error Chip Erase Block Erase before timeout DQ7 DQ7 DQ7 DQ7 0 0 0 0 0 1 DQ6 Toggle Toggle Toggle Toggle Toggle Toggle Toggle Toggle No Toggle DQ5 0 0 1 0 0 0 0 0 0 DQ3 – – – 1 0 0 1 1 – DQ2 – – – Toggle Toggle No Toggle Toggle No Toggle Toggle RB 0 0 Hi-Z Hi-Z 0 0 Hi-Z 0 Hi-Z Hi-Z Data read as normal 0 0 Toggle Toggle 1 1 1 1 No Toggle Toggle 0 0 Figure 6. Data Polling flowchart START READ DQ5 & DQ7 at VALID ADDRESS DQ7 = DATA NO NO DQ5 = 1 YES YES READ DQ7 at VALID ADDRESS DQ7 = DATA NO FAIL YES PASS AI07760 34/74 M29DW640F Figure 7. Toggle flowchart START READ DQ6 ADDRESS = BA READ DQ5 & DQ6 ADDRESS = BA Status register DQ6 = TOGGLE YES NO DQ5 =1 YES NO READ DQ6 TWICE ADDRESS = BA DQ6 = TOGGLE YES FAIL NO PASS AI08929b 1. BA = Address of Bank being Programmed or Erased. 35/74 Dual operations and multiple bank architecture M29DW640F 6 Dual operations and multiple bank architecture The Multiple Bank Architecture of the M29DW640F gives greater flexibility for software developers to split the code and data spaces within the memory array. The Dual Operations feature simplifies the software management of the device by allowing code to be executed from one bank while another bank is being programmed or erased. The Dual Operations feature means that while programming or erasing in one bank, read operations are possible in another bank with zero latency. Only one bank at a time is allowed to be in program or erase mode. However, certain commands can cross bank boundaries, which means that during an operation only the banks that are not concerned with the cross bank operation are available for dual operations. For example, if a Block Erase command is issued to erase blocks in both Bank A and Bank B, then only Banks C or D are available for read operations while the erase is being executed. If a read operation is required in a bank, which is programming or erasing, the program or erase operation can be suspended. Also if the suspended operation was erase then a program command can be issued to another block, so the device can have one block in Erase Suspend mode, one programming and other banks in read mode. By using a combination of these features, read operations are possible at any moment in the device. Table 10 and Table 11 show the dual operations possible in other banks and in the same bank. Note that only the commonly used commands are represented in these tables. Table 10. Dual operations allowed in other banks Commands allowed in another bank(1) Status of bank(1) Read Array Yes Yes Yes Yes Yes Read Status Register(2) Yes(3) No No No No Read CFI Query Yes No No Yes Yes Auto Select Yes No No Yes Yes Program/ Program/ Erase Erase Suspend Resume Yes(3) No No – – Yes(4) No No Yes(5) Yes(6) Program Yes – – No Yes Erase Yes – – No No Idle Programming Erasing Program Suspended Erase Suspended 1. If several banks are involved in a program or erase operation, then only the banks that are not concerned with the operation are available for dual operations. 2. Read Status Register is not a command. The Status Register can be read during a block program or erase operation. 3. Only after a program or erase operation in that bank. 4. Only after a Program or Erase Suspend command in that bank. 5. Only a Program Resume is allowed if the bank was previously in Program Suspend mode. 6. Only an Erase Resume is allowed if the bank was previously in Erase Suspend mode. 36/74 M29DW640F Table 11. Dual operations and multiple bank architecture Dual operations allowed in same bank Commands allowed in same bank Status of bank Read Array Yes No No Yes(6) Yes(6) Read Status Register(1) Yes Yes Yes No Yes(7) Read CFI Query Yes No No Yes Yes Auto Select Yes No No Yes Yes Program Yes – – No Yes(6) Erase Yes – No – No Program/ Program/ Erase Erase Suspend Resume Yes(2) Yes(4) Yes(5) – – Yes(3) – – Yes Yes Idle Programming Erasing Program Suspended Erase Suspended 1. Read Status Register is not a command. The Status Register can be read during a block program or erase operation. 2. Only after a program or erase operation in that bank. 3. Only after a Program or Erase Suspend command in that bank. 4. Only a Program Suspend. 5. Only an Erase suspend. 6. Not allowed in the Block or Word that is being erased or programmed. 7. The Status Register can be read by addressing the block being erase suspended. 37/74 Maximum ratings M29DW640F 7 Maximum ratings Stressing the device above the rating listed in the Absolute Maximum Ratings table may cause permanent damage to the device. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Refer also to the Numonyx SURE Program and other relevant quality documents. Table 12. Symbol TBIAS TSTG VIO VCC VID VPP(3) Absolute maximum ratings Parameter Temperature Under Bias Storage Temperature Input or Output voltage Supply voltage Identification voltage Program voltage (1)(2) Min –50 –65 –0.6 –0.6 –0.6 –0.6 Max 125 150 VCC +0.6 4 13.5 13.5 Unit °C °C V V V V 1. Minimum voltage may undershoot to –2V during transition and for less than 20ns during transitions. 2. Maximum voltage may overshoot to VCC +2V during transition and for less than 20ns during transitions. 3. VPP must not remain at 12V for more than a total of 80hrs. 38/74 M29DW640F DC and AC parameters 8 DC and AC parameters This section summarizes the operating measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed under the Measurement Conditions summarized in Table 13: Operating and AC measurement conditions. Designers should check that the operating conditions in their circuit match the operating conditions when relying on the quoted parameters. Table 13. Operating and AC measurement conditions M29DW640F Parameter Min VCC Supply voltage Ambient Operating Temperature Load capacitance (CL) Input Rise and Fall times Input pulse voltages Input and Output Timing Ref. voltages 0 to VCC VCC/2 2.7 –40 30 10 0 to VCC VCC/2 60 Max 3.6 85 Min 2.7 –40 30 10 70 Max 3.6 85 V °C pF ns V V Unit Figure 8. AC measurement I/O waveform VCC VCC/2 0V AI05557 39/74 DC and AC parameters Figure 9. AC measurement Load Circuit VPP VCC VCC M29DW640F 25kΩ DEVICE UNDER TEST 25kΩ CL 0.1µF 0.1µF CL includes JIG capacitance AI05558 Table 14. Symbol CIN COUT Device capacitance(1) Parameter Input capacitance Output capacitance Test condition VIN = 0V VOUT = 0V Min Max 6 12 Unit pF pF 1. Sampled only, not 100% tested. 40/74 M29DW640F Table 15. Symbol ILI ILO ICC1(1) DC and AC parameters DC characteristics Parameter Input Leakage Current Output Leakage Current Supply Current (Read) Supply Current (Standby) Test condition 0V ≤VIN ≤VCC 0V ≤VOUT ≤VCC E = VIL, G = VIH, f = 6MHz E = VCC ±0.2V, RP = VCC ±0.2V Program/Erase Controller active VPP/WP = VIL or VIH VPP/WP = VPP Min Max ±1 ±1 10 100 20 20 –0.5 0.7VCC VCC = 2.7V ±10% VCC =2.7V ±10% IOL = 1.8mA IOH = –100µA VCC –0.4 11.5 1.8 12.5 2.3 11.5 0.8 VCC +0.3 12.5 15 0.45 Unit µA µA mA µA ICC2 ICC3 (1)(2) Supply Current (Program/Erase) Input Low voltage Input High voltage Voltage for VPP/WP Program Acceleration Current for VPP/WP Program Acceleration Output Low voltage Output High voltage Identification voltage Program/Erase Lockout supply voltage mA mA V V V mA V V V V VIL VIH VPP IPP VOL VOH VID VLKO 1. In Dual operations the Supply Current will be the sum of ICC1(read) and ICC3 (program/erase). 2. Sampled only, not 100% tested. 41/74 DC and AC parameters Figure 10. Random Read AC waveforms M29DW640F tAVAV A0-A21/ A–1 tAVQV E tELQV tELQX G tGLQX tGLQV DQ0-DQ7/ DQ8-DQ15 tBHQV BYTE tELBL/tELBH tBLQZ AI05559 VALID tAXQX tEHQX tEHQZ tGHQX tGHQZ VALID 42/74 M29DW640F A3-A21 A-1 VALID A0-A2 VALID VALID VALID VALID VALID VALID VALID VALID tAVQV Figure 11. Page Read AC waveforms E tEHQX tEHQZ tELQV G tGLQV tAVQV1 VALID VALID VALID VALID VALID VALID VALID tGHQX tGHQZ VALID DQ0-DQ15 tBHQV BYTE tBLQZ AI11309 DC and AC parameters tELBL/tELBH 43/74 DC and AC parameters Table 16. Symbol M29DW640F Read AC characteristics M29DW640F Alt Parameter Test condition 60 70 70 70 25 25 30 0 25 70 5 ns ns ns ns ns ns ns ns ns E = VIL, G = VIL E = VIL, G = VIL E = VIL, G = VIL Unit tAVAV tAVQV tAVQV1 tBLQZ tBHQV tELQX(1) tEHQZ(1) tELQV tELBL tELBH tEHQX tGHQX tAXQX tGLQX(1) tGLQV tGHQZ (1) tRC tACC tPAGE tFLQZ tFHQV tLZ tHZ tCE tELFL tELFH tOH Address Valid to Next Address Valid Address Valid to Output Valid Address Valid to Output Valid (Page) BYTE Low to Output Hi-Z BYTE High to Output valid Chip Enable Low to Output Transition Chip Enable High to Output Hi-Z Chip Enable Low to Output Valid Chip Enable to BYTE Low or High Chip Enable, Output Enable or Address Transition to Output Transition Output Enable Low to Output Transition Output Enable Low to Output Valid Output Enable High to Output Hi-Z Min Max Max Max Max 60 60 25 25 30 0 25 60 5 G = VIL G = VIL G = VIL Min Max Max Max Min 0 0 ns tOLZ tOE tDF E = VIL E = VIL E = VIL Min Max Max 0 25 25 0 25 25 ns ns ns 1. Sampled only, not 100% tested. 44/74 M29DW640F Figure 12. Write AC waveforms, Write Enable controlled DC and AC parameters tAVAV A0-A21/ A–1 VALID tWLAX tAVWL E tELWL G tGHWL W tWHWL tDVWH DQ0-DQ7/ DQ8-DQ15 VALID tWHDX tWLWH tWHGL tWHEH VCC tVCHEL RB tWHRL AI05560 45/74 DC and AC parameters Table 17. Symbol tAVAV tAVWL tDVWH tELWL tGHWL tVCHEL tWLWH tWHDX tWHEH tWHWL tWLAX tWHGL tWHRL(1) tVCS tWP tDH tCH tWPH tAH tOEH tBUSY M29DW640F Write AC characteristics, Write Enable controlled M29DW640F Alt tWC tAS tDS tCS Parameter 60 Address Valid to Next Address Valid Address Valid to Write Enable Low Input Valid to Write Enable High Chip Enable Low to Write Enable Low Output Enable High to Write Enable Low VCC High to Chip Enable Low Write Enable Low to Write Enable High Write Enable High to Input Transition Write Enable High to Chip Enable High Write Enable High to Write Enable Low Write Enable Low to Address Transition Write Enable High to Output Enable Low Program/Erase Valid to RB Low Min Min Min Min Min Min Min Min Min Min Min Min Max 60 0 45 0 0 50 45 0 0 30 45 0 30 70 70 0 45 0 0 50 45 0 0 30 45 0 30 ns ns ns ns ns µs ns ns ns ns ns ns ns Unit 1. Sampled only, not 100% tested. 46/74 M29DW640F Figure 13. Write AC waveforms, Chip Enable controlled tAVAV A0-A21/ A–1 VALID tELAX tAVEL W tWLEL G tGHEL E tELEH tEHWH DC and AC parameters tEHGL tEHEL tDVEH DQ0-DQ7/ DQ8-DQ15 VALID tEHDX VCC tVCHWL RB tEHRL AI05561 47/74 DC and AC parameters Table 18. Symbol tAVAV tAVEL tDVEH tELEH tELAX tEHDX tEHWH tEHEL tEHGL tEHRL (1) M29DW640F Write AC characteristics, Chip Enable controlled M29DW640F Alt tWC tAS tDS tCP tAH tDH tWH tCPH tOEH tBUSY Parameter 60 Address Valid to Next Address Valid Address Valid to Chip Enable Low Input Valid to Chip Enable High Chip Enable Low to Chip Enable High Chip Enable Low to Address Transition Chip Enable High to Input Transition Chip Enable High to Write Enable High Chip Enable High to Chip Enable Low Chip Enable High to Output Enable Low Program/Erase Valid to RB Low Output Enable High Chip Enable Low tVCS tWS VCC High to Write Enable Low Write Enable Low to Chip Enable Low Min Min Min Min Min Min Min Min Min Max Min Min Min 60 0 45 45 45 0 0 30 0 30 0 50 0 70 70 0 45 45 45 0 0 30 0 30 0 50 0 ns ns ns ns ns ns ns ns ns ns ns µs ns Unit tGHEL tVCHWL tWLEL 1. Sampled only, not 100% tested. 48/74 M29DW640F DC and AC parameters Figure 14. Toggle and Alternative Toggle Bits mechanism, Chip Enable controlled Address Outside the Bank Being Programmed or Erased Address in the Bank Being Programmed or Erased tAXEL E Address Outside the Bank Being Programmed or Erased A0-A21 A-1 G tELQV DQ2(1)/DQ6(2) Data Toggle/ Alternative Toggle Bit tELQV Toggle/ Alternative Toggle Bit Data Read Operation outside the Bank Being Programmed or Erased Read Operation in the Bank Being Programmed or Erased Read Operation Outside the Bank Being Programmed or Erased AI08914d 1. The Toggle Bit is output on DQ6. 2. The Alternative Toggle Bit is output on DQ2. 3. Refer to Table 16: Read AC characteristics for tELQV value. Figure 15. Toggle and Alternative Toggle Bits mechanism, Output Enable controlled A0-A21 A-1 Address Outside the Bank Being Programmed or Erased Address in the Bank Being Programmed or Erased tAXGL Address Outside the Bank Being Programmed or Erased G E tGLQV DQ2(1)/DQ6(2) Data Toggle/ Alternative Toggle Bit tGLQV Toggle/ Alternative Toggle Bit Data Read Operation outside the Bank Being Programmed or Erased Read Operation in the Bank Being Programmed or Erased Read Operation Outside the Bank Being Programmed or Erased AI08915d 1. The Toggle Bit is output on DQ6. 4. The Alternative Toggle Bit is output on DQ2. 5. Refer to Table 16: Read AC characteristics for tGLQV value. 49/74 DC and AC parameters Table 19. Symbol tAXEL tAXGL M29DW640F Toggle and Alternative Toggle Bits AC characteristics Alt Parameter 60 Address Transition to Chip Enable Low Address Transition to Output Enable Low Min Min 10 10 70 10 10 ns ns Unit Figure 16. Reset/Block Temporary Unprotect AC waveforms W, E, G tPHWL, tPHEL, tPHGL RB tRHWL, tRHEL, tRHGL RP tPLPX tPHPHH tPLYH AI02931B Figure 17. Accelerated Program Timing waveforms VPP VPP/WP VIL or VIH tVHVPP tVHVPP AI05563 50/74 M29DW640F Table 20. Symbol tPHWL(1) tPHEL tPHGL(1) tRHWL(1) tRHEL(1) tRHGL(1) tPLPX tPLYH tPHPHH(1) tVHVPP(1) DC and AC parameters Reset/Block Temporary Unprotect AC characteristics M29DW640F Alt Parameter 60 RP High to Write Enable Low, Chip Enable Low, Output Enable Low 70 Unit tRH Min 50 50 ns tRB tRP tREADY tVIDR RB High to Write Enable Low, Chip Enable Low, Output Enable Low RP Pulse Width RP Low to Read Mode RP Rise Time to VID VPP Rise and Fall Time Min Min Max Min Min 0 500 20 500 250 0 500 20 500 250 ns ns µs ns ns 1. Sampled only, not 100% tested. 51/74 Package mechanical M29DW640F 9 Package mechanical Figure 18. TSOP48 – 48 lead Plastic Thin Small Outline, 12 x 20mm, package outline 1 48 e D1 B 24 25 L1 A2 A E1 E DIE A1 C CP α L TSOP-G 1. Drawing is not to scale. Table 21. Symbol TSOP48 – 48 lead Plastic Thin Small Outline, 12 x 20mm, package mechanical data millimeters Typ Min Max 1.200 0.100 1.000 0.220 0.050 0.950 0.170 0.100 0.150 1.050 0.270 0.210 0.080 12.000 20.000 18.400 0.500 0.600 0.800 3° 0° 5° 11.900 19.800 18.300 – 0.500 12.100 20.200 18.500 – 0.700 0.4724 0.7874 0.7244 0.0197 0.0236 0.0315 3° 0° 5° 0.4685 0.7795 0.7205 – 0.0197 0.0039 0.0394 0.0087 0.0020 0.0374 0.0067 0.0039 Typ inches Min Max 0.0472 0.0059 0.0413 0.0106 0.0083 0.0031 0.4764 0.7953 0.7283 – 0.0276 A A1 A2 B C CP D1 E E1 e L L1 α 52/74 M29DW640F Package mechanical Figure 19. TFBGA48 6x8mm - 6x8 active ball array, 0.8mm pitch, package outline D FD FE SD D1 SE E E1 BALL "A1" ddd e e A A1 b A2 BGA-Z32 1. Drawing is not to scale. Table 22. Symbol TFBGA48 6x8mm - 6x8 active ball array, 0.8mm pitch, package mechanical data millimeters Typ Min Max 1.200 0.260 0.900 0.350 6.000 4.000 5.900 – 0.450 6.100 – 0.100 8.000 5.600 0.800 1.000 1.200 0.400 0.400 7.900 – – – – – – 8.100 – – – – – – 0.3150 0.2205 0.0315 0.0394 0.0472 0.0157 0.0157 0.3110 – – – – – – 0.2362 0.1575 0.0138 0.2323 – 0.0102 0.0354 0.0177 0.2402 – 0.0039 0.3189 – – – – – – Typ inches Min Max 0.0472 A A1 A2 b D D1 ddd E E1 e FD FE SD SE 53/74 Part numbering M29DW640F 10 Table 23. Example: Device Type M29 Architecture Part numbering Ordering information scheme M29DW640F 70 N 1 T D = Dual or Multiple Bank Operating Voltage W = VCC = 2.7 to 3.6V Device Function 640F = 64 Mbit (x8/x16), Boot Block, 8+24+24+8 partitioning, 0.13µm technology Speed 60 = 60ns 70 = 70ns Package N = TSOP48: 12 x 20 mm ZE = TFBGA48 6 x 8mm, 0.8 mm pitch Temperature Range 1 = 0 to 70 °C 6 = –40 to 85 °C Option Blank = Standard Packing T = Tape & Reel Packing E = ECOPACK Package, Standard Packing F = ECOPACK Package, Tape & Reel Packing Note: This product is also available with the Extended Block factory locked. For further details and ordering information contact your nearest Numonyx sales office. Devices are shipped from the factory with the memory content bits erased to ’1’. For a list of available options (Speed, Package, etc.) or for further information on any aspect of this device, please contact your nearest Numonyx Sales Office. 54/74 M29DW640F Block addresses Appendix A Table 24. Bank Block addresses Block addresses (KBytes/ KWords) 8/4 8/4 8/4 8/4 8/4 8/4 8/4 8/4 64/32 64/32 64/32 64/32 64/32 Protection Group 64/32 64/32 64/32 64/32 Protection Group 64/32 64/32 64/32 64/32 Protection Group 64/32 64/32 Protection Group Protection Block Group Protection Group Protection Group Protection Group Protection Group Protection Group Protection Group Protection Group Protection Group (x8) 000000h-001FFFh(1) 002000h-003FFFh(1) 004000h-005FFFh(1) 006000h-007FFFh(1) 008000h-009FFFh(1) 00A000h-00BFFFh(1) 00C000h-00DFFFh(1) 00E000h-00FFFFh(1) 010000h-01FFFFh 020000h-02FFFFh 030000h-03FFFFh 040000h-04FFFFh 050000h-05FFFFh 060000h-06FFFFh 070000h-07FFFFh 080000h-08FFFFh 090000h-09FFFFh 0A0000h-0AFFFFh 0B0000h-0BFFFFh 0C0000h-0CFFFFh 0D0000h-0DFFFFh 0E0000h-0EFFFFh 0F0000h-0FFFFFh (x16) 000000h–000FFFh(1) 001000h–001FFFh(1) 002000h–002FFFh(1) 003000h–003FFFh(1) 004000h–004FFFh(1) 005000h–005FFFh(1) 006000h–006FFFh(1) 007000h–007FFFh(1) 008000h–00FFFFh 010000h–017FFFh 018000h–01FFFFh 020000h–027FFFh 028000h–02FFFFh 030000h–037FFFh 038000h–03FFFFh 040000h–047FFFh 048000h–04FFFFh 050000h–057FFFh 058000h–05FFFFh 060000h–067FFFh 068000h–06FFFFh 070000h–077FFFh 078000h–07FFFFh Block 0 1 2 3 4 5 6 7 8 9 Bank A 10 11 12 13 14 15 16 17 18 19 20 21 22 55/74 Block addresses Table 24. Bank M29DW640F Block addresses (continued) (KBytes/ KWords) 64/32 64/32 Protection Group 64/32 64/32 64/32 64/32 Protection Group 64/32 64/32 64/32 64/32 Protection Group 64/32 64/32 64/32 64/32 Protection Group 64/32 64/32 64/32 64/32 Protection Group 64/32 64/32 64/32 64/32 Protection Group 64/32 64/32 64/32 64/32 Protection Group 64/32 64/32 64/32 64/32 Protection Group 64/32 64/32 Protection Block Group (x8) 100000h-10FFFFh 110000h-11FFFFh 120000h-12FFFFh 130000h-13FFFFh 140000h-14FFFFh 150000h-15FFFFh 160000h-16FFFFh 170000h-17FFFFh 180000h-18FFFFh 190000h-19FFFFh 1A0000h-1AFFFFh 1B0000h-1BFFFFh 1C0000h-1CFFFFh 1D0000h-1DFFFFh 1E0000h-1EFFFFh 1F0000h-1FFFFFh 200000h-20FFFFh 210000h-21FFFFh 220000h-22FFFFh 230000h-23FFFFh 240000h-24FFFFh 250000h-25FFFFh 260000h-26FFFFh 270000h-27FFFFh 280000h-28FFFFh 290000h-29FFFFh 2A0000h-2AFFFFh 2B0000h-2BFFFFh 2C0000h-2CFFFFh 2D0000h-2DFFFFh 2E0000h-2EFFFFh 2F0000h-2FFFFFh (x16) 080000h–087FFFh 088000h–08FFFFh 090000h–097FFFh 098000h–09FFFFh 0A0000h–0A7FFFh 0A8000h–0AFFFFh 0B0000h–0B7FFFh 0B8000h–0BFFFFh 0C0000h–0C7FFFh 0C8000h–0CFFFFh 0D0000h–0D7FFFh 0D8000h–0DFFFFh 0E0000h–0E7FFFh 0E8000h–0EFFFFh 0F0000h–0F7FFFh 0F8000h–0FFFFFh 100000h–107FFFh 108000h–10FFFFh 110000h–117FFFh 118000h–11FFFFh 120000h–127FFFh 128000h–12FFFFh 130000h–137FFFh 138000h–13FFFFh 140000h–147FFFh 148000h–14FFFFh 150000h–157FFFh 158000h–15FFFFh 160000h–167FFFh 168000h–16FFFFh 170000h–177FFFh 178000h–17FFFFh Block 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 Bank B 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 56/74 M29DW640F Table 24. Bank Block addresses Block addresses (continued) (KBytes/ KWords) 64/32 64/32 Protection Group 64/32 64/32 64/32 64/32 Protection Group 64/32 64/32 64/32 64/32 Protection Group 64/32 64/32 64/32 64/32 Protection Group 64/32 64/32 64/32 64/32 Protection Group 64/32 64/32 64/32 64/32 Protection Group 64/32 64/32 64/32 64/32 Protection Group 64/32 64/32 64/32 64/32 Protection Group 64/32 64/32 Protection Block Group (x8) 300000h-30FFFFh 310000h-31FFFFh 320000h-32FFFFh 330000h-33FFFFh 340000h-34FFFFh 350000h-35FFFFh 360000h-36FFFFh 370000h-37FFFFh 380000h-38FFFFh 390000h-39FFFFh 3A0000h-3AFFFFh 3B0000h-3BFFFFh 3C0000h-3CFFFFh 3D0000h-3DFFFFh 3E0000h-3EFFFFh 3F0000h-3FFFFFh 400000h–40FFFFh 410000h–41FFFFh 420000h–42FFFFh 430000h–43FFFFh 440000h–44FFFFh 450000h–45FFFFh 460000h–46FFFFh 470000h–47FFFFh 480000h–48FFFFh 490000h–49FFFFh 4A0000h–4AFFFFh 4B0000h–4BFFFFh 4C0000h–4CFFFFh 4D0000h–4DFFFFh 4E0000h–4EFFFFh 4F0000h–4FFFFFh (x16) 180000h–187FFFh 188000h–18FFFFh 190000h–197FFFh 198000h–19FFFFh 1A0000h–1A7FFFh 1A8000h–1AFFFFh 1B0000h–1B7FFFh 1B8000h–1BFFFFh 1C0000h–1C7FFFh 1C8000h–1CFFFFh 1D0000h–1D7FFFh 1D8000h–1DFFFFh 1E0000h–1E7FFFh 1E8000h–1EFFFFh 1F0000h–1F7FFFh 1F8000h–1FFFFFh 200000h–207FFFh 208000h–20FFFFh 210000h–217FFFh 218000h–21FFFFh 220000h–227FFFh 228000h–22FFFFh 230000h–237FFFh 238000h–23FFFFh 240000h–247FFFh 248000h–24FFFFh 250000h–257FFFh 258000h–25FFFFh 260000h–267FFFh 268000h–26FFFFh 270000h–277FFFh 278000h–27FFFFh Block 55 56 57 58 59 60 61 Bank B 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 Bank C 78 79 80 81 82 83 84 85 86 57/74 Block addresses Table 24. Bank M29DW640F Block addresses (continued) (KBytes/ KWords) 64/32 64/32 Protection Group 64/32 64/32 64/32 64/32 Protection Group 64/32 64/32 64/32 64/32 Protection Group 64/32 64/32 64/32 64/32 Protection Group 64/32 64/32 64/32 64/32 Protection Group 64/32 64/32 64/32 64/32 Protection Group 64/32 64/32 64/32 64/32 Protection Group 64/32 64/32 64/32 64/32 Protection Group 64/32 64/32 Protection Block Group (x8) 500000h–50FFFFh 510000h–51FFFFh 520000h–52FFFFh 530000h–53FFFFh 540000h–54FFFFh 550000h–55FFFFh 560000h–56FFFFh 570000h–57FFFFh 580000h–58FFFFh 590000h–59FFFFh 5A0000h–5AFFFFh 5B0000h–5BFFFFh 5C0000h–5CFFFFh 5D0000h–5DFFFFh 5E0000h–5EFFFFh 5F0000h–5FFFFFh 600000h–60FFFFh 610000h–61FFFFh 620000h–62FFFFh 630000h–63FFFFh 640000h–64FFFFh 650000h–65FFFFh 660000h–66FFFFh 670000h–67FFFFh 680000h–68FFFFh 690000h–69FFFFh 6A0000h–6AFFFFh 6B0000h–6BFFFFh 6C0000h–6CFFFFh 6D0000h–6DFFFFh 6E0000h–6EFFFFh 6F0000h–6FFFFFh (x16) 280000h–287FFFh 288000h–28FFFFh 290000h–297FFFh 298000h–29FFFFh 2A0000h–2A7FFFh 2A8000h–2AFFFFh 2B0000h–2B7FFFh 2B8000h–2BFFFFh 2C0000h–2C7FFFh 2C8000h–2CFFFFh 2D0000h–2D7FFFh 2D8000h–2DFFFFh 2E0000h–2E7FFFh 2E8000h–2EFFFFh 2F0000h–2F7FFFh 2F8000h–2FFFFFh 300000h–307FFFh 308000h–30FFFFh 310000h–317FFFh 318000h–31FFFFh 320000h–327FFFh 328000h–32FFFFh 330000h–337FFFh 338000h–33FFFFh 340000h–347FFFh 348000h–34FFFFh 350000h–357FFFh 358000h–35FFFFh 360000h–367FFFh 368000h–36FFFFh 370000h–377FFFh 378000h–37FFFFh Block 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 Bank C 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 58/74 M29DW640F Table 24. Bank Block addresses Block addresses (continued) (KBytes/ KWords) 64/32 64/32 Protection Group 64/32 64/32 64/32 64/32 Protection Group 64/32 64/32 64/32 64/32 Protection Group 64/32 64/32 64/32 64/32 64/32 8/4 8/4 8/4 8/4 8/4 8/4 8/4 8/4 Protection Group Protection Group Protection Group Protection Group Protection Group Protection Group Protection Group Protection Group Protection Group Protection Block Group (x8) 700000h–70FFFFh 710000h–71FFFFh 720000h–72FFFFh 730000h–73FFFFh 740000h–74FFFFh 750000h–75FFFFh 760000h–76FFFFh 770000h–77FFFFh 780000h–78FFFFh 790000h–79FFFFh 7A0000h–7AFFFFh 7B0000h–7BFFFFh 7C0000h–7CFFFFh 7D0000h–7DFFFFh 7E0000h–7EFFFFh 7F0000h–7F1FFFh 7F2000h–7F3FFFh 7F4000h–7F5FFFh 7F6000h–7F7FFFh 7F8000h–7F9FFFh 7FA000h–7FBFFFh 7FC000h–7FDFFFh 7FE000h–7FFFFFh (x16) 380000h–387FFFh 388000h–38FFFFh 390000h–397FFFh 398000h–39FFFFh 3A0000h–3A7FFFh 3A8000h–3AFFFFh 3B0000h–3B7FFFh 3B8000h–3BFFFFh 3C0000h–3C7FFFh 3C8000h–3CFFFFh 3D0000h–3D7FFFh 3D8000h–3DFFFFh 3E0000h–3E7FFFh 3E8000h–3EFFFFh 3F0000h–3F7FFFh 3F8000h–3F8FFFh 3F9000h–3F9FFFh 3FA000h–3FAFFFh 3FB000h–3FBFFFh 3FC000h–3FCFFFh 3FD000h–3FDFFFh 3FE000h–3FEFFFh 3FF000h–3FFFFFh Block 119 120 121 122 123 124 125 126 127 128 Bank D 129 130 131 132 133 134 135 136 137 138 139 140 141 1. Used as Extended Block addresses in Extended Block mode. 59/74 Common Flash Interface (CFI) M29DW640F Appendix B Common Flash Interface (CFI) The Common Flash Interface is a JEDEC approved, standardized data structure that can be read from the Flash memory device. It allows a system software to query the device to determine various electrical and timing parameters, density information and functions supported by the memory. The system can interface easily with the device, enabling the software to upgrade itself when necessary. When the Read CFI Query command is issued the addressed bank enters Read CFI Query mode and read operations in the same bank (A21-A19) output the CFI data. Table 25, Table 26, Table 27, Table 28, Table 29 and Table 30 show the addresses (A-1, A0-A10) used to retrieve the data. The CFI data structure also contains a security area where a 64 bit unique security number is written (see Table 30: Security Code Area). This area can be accessed only in Read mode by the final user. It is impossible to change the security number after it has been written by Numonyx. Table 25. Query structure overview Sub-section name x16 10h 1Bh 27h 40h 61h x8 20h 36h 4Eh 80h C2h CFI Query Identification String System Interface Information Device Geometry Definition Primary Algorithm-specific Extended Query table Security Code Area Command set ID and algorithm data offset Device timing & voltage information Flash device layout Additional information specific to the Primary Algorithm (optional) 64 bit unique device number Description Address 1. Query data are always presented on the lowest order data outputs. Table 26. CFI Query Identification String Data Description Value “Q” Query Unique ASCII String "QRY" "R" "Y" AMD Primary Algorithm Command Set and Control Interface ID code 16 bit ID code defining a specific algorithm Compatible Address for Primary Algorithm extended Query table (see Table 29) P = 40h Address x16 10h 11h 12h 13h 14h 15h 16h 17h 18h 19h 1Ah x8 20h 22h 24h 26h 28h 2Ah 2Ch 2Eh 30h 32h 34h 0051h 0052h 0059h 0002h 0000h 0040h 0000h 0000h 0000h 0000h Address for Alternate Algorithm extended Query table 0000h 1. Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’. Alternate Vendor Command Set and Control Interface ID Code second vendor - specified algorithm supported NA NA 60/74 M29DW640F Table 27. CFI Query System Interface Information Data x16 x8 Description Common Flash Interface (CFI) Address Value 1Bh 36h 0027h VCC Logic Supply Minimum Program/Erase voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 mV VCC Logic Supply Maximum Program/Erase voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 mV VPP [Programming] Supply Minimum Program/Erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 mV VPP [Programming] Supply Maximum Program/Erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 mV Typical timeout per single Byte/Word program = 2n µs Typical timeout for minimum size write buffer program = Typical timeout per individual block erase = 2n ms Typical timeout for full Chip Erase = 2n ms 2n 2n times typical times typical 2n µs 2.7V 1Ch 38h 0036h 3.6V 1Dh 3Ah 00B5h 11.5V 1Eh 1Fh 20h 21h 22h 23h 24h 25h 26h 3Ch 3Eh 40h 42h 44h 46h 48h 4Ah 4Ch 00C5h 0004h 0000h 000Ah 0000h 0004h 0000h 0003h 0000h 12.5V 16µs NA 1s NA 256 µs NA 8s NA Maximum timeout for Byte/Word program = Maximum timeout for write buffer program = Maximum timeout per individual block erase = 2n times typical Maximum timeout for Chip Erase = 2n times typical 61/74 Common Flash Interface (CFI) Table 28. Device Geometry Definition Data x16 27h 28h 29h 2Ah 2Bh 2Ch 2Dh 2Eh 2Fh 30h 31h 32h 33h 34h 35h 36h 37h 38h x8 4Eh 50h 52h 54h 56h 58h 5Ah 5Ch 5Eh 60h 62h 64h 66h 68h 6Ah 6Ch 6Eh 70h 0017h 0002h 0000h 0003h 0000h 0003h 0007h 0000h 0020h 0000h 007Dh 0000h 0000h 0001h 0007h 0000h 0020h 0000h Device Size = 2n in number of Bytes Flash Device Interface Code description Description M29DW640F Address Value 8 MBytes x8, x16 Async. 8 3 8 8 KBytes 126 64 KBytes 8 8 KBytes Maximum number of Bytes in multi-Byte program or page = 2n Number of Erase Block Regions(1). It specifies the number of regions containing contiguous Erase Blocks of the same size. Erase Block Region 1 Information Number of Erase Blocks of identical size = 0007h+1 Erase Block Region 1 Information Block size in Region 1 = 0020h * 256 Byte Erase Block Region 2 Information Number of Erase Blocks of identical size = 007Dh+1 Erase Block Region 2 Information Block size in Region 2 = 0100h * 256 Byte Erase Block Region 3 information Number of Erase Blocks of identical size = 0007h + 1 Erase Block Region 3 information Block size in region 3 = 0020h * 256 Bytes 1. Erase Block Region 1 corresponds to addresses 000000h to 007FFFh; Erase block Region 2 corresponds to addresses 008000h to 3F7FFFh and Erase Block Region 3 corresponds to addresses 3F8000h to 3FFFFFh. 62/74 M29DW640F Table 29. Primary Algorithm-specific Extended Query table Data x16 40h 41h 42h 43h 44h 45h x8 80h 82h 84h 86h 88h 8Ah 0050h 0052h 0049h 0031h 0033h 0000h Major version number, ASCII Minor version number, ASCII Address Sensitive Unlock (bits 1 to 0) 00 = required, 01= not required Silicon Revision Number (bits 7 to 2) Description Common Flash Interface (CFI) Address Value "P" Primary Algorithm extended Query table unique ASCII string “PRI” "R" "I" "1" "3" Yes 46h 47h 48h 8Ch 8Eh 90h 0002h 0001h 0001h Erase Suspend 00 = not supported, 01 = Read only, 02 = Read and Write Block Protection 00 = not supported, x = number of sectors in per group Temporary Block Unprotect 00 = not supported, 01 = supported Block Protect /Unprotect 04 = M29W400B 05= Simultaneous Operations, x = number of blocks (excluding Bank A) Burst Mode, 00 = not supported, 01 = supported Page Mode, 00 = not supported, 01 = 4 page Word, 02 = 8 page Word VPP Supply Minimum Program/Erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 mV VPP Supply Maximum Program/Erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 mV Top/Bottom Boot Block Flag 00h = uniform device 01h = 8 x8 KByte Blocks, Top and Bottom Boot with Write Protect 02h = Bottom boot device 03h = Top Boot Device 04h = Both Top and Bottom Program Suspend, 00 = not supported, 01 = supported Bank Organization, 00 = data at 4Ah is zero X = number of banks 2 1 Yes 49h 92h 0005h 5 4Ah 4Bh 4Ch 94h 96h 98h 0077h 0000h 0002h 119 No Yes 4Dh 9Ah 00B5h 11.5V 4Eh 9Ch 00C5h 12.5V 4Fh 9Eh 0001h T/B 50h 57h A0h AEh 0001h 0004h Yes 4 63/74 Common Flash Interface (CFI) Table 29. Primary Algorithm-specific Extended Query table Data x16 58h 59h 5Ah 5Bh x8 B0h B2h B4h B6h 0017h 0030h 0030h 0017h Bank A information X = number of blocks in Bank A Bank B information X = number of blocks in Bank B Bank C information X = number of blocks in Bank C Bank D information X = number of blocks in Bank D Description M29DW640F Address Value 23 48 48 23 Table 30. Security Code Area Data Description Address x16 61h 62h 63h 64h x8 C3h, C2h C5h, C4h C7h, C6h C9h, C8h XXXX XXXX 64 bit: unique device number XXXX XXXX 64/74 M29DW640F Extended Memory Block Appendix C Extended Memory Block The has an extra block, the Extended Block, that can be accessed using a dedicated command. This Extended Block is 128 Words in x16 mode and 256 Bytes in x8 mode. It is used as a security block (to provide a permanent security identification number) or to store additional information. The Extended Block is either Factory Locked or Customer Lockable, its status is indicated by bit DQ7. This bit is permanently set to either ‘1’ or ‘0’ at the factory and cannot be changed. When set to ‘1’, it indicates that the device is factory locked and the Extended Block is protected. When set to ‘0’, it indicates that the device is customer lockable and the Extended Block is unprotected. Bit DQ7 being permanently locked to either ‘1’ or ‘0’ is another security feature which ensures that a customer lockable device cannot be used instead of a factory locked one. Bit DQ7 is the most significant bit in the Extended Block Verify Code and a specific procedure must be followed to read it. See “Extended Block Indicator Bit” in Table 4: Bus operations, BYTE = VIL and Table 5: Bus operations, BYTE = VIH, respectively, for details of how to read bit DQ7. The Extended Block can only be accessed when the device is in Extended Block mode. For details of how the Extended Block mode is entered and exited, refer to Section 4.3: Block Protection commands and Section 4.3.2: Exit Extended Block command, and to Table 6: Commands, 16-bit mode, BYTE = VIH and Table 7: Commands, 8-bit mode, BYTE = VIL, respectively. C.1 Factory Locked Extended Block In devices where the Extended Block is factory locked, the Security Identification Number is written to the Extended Block address space (see Table 31: Extended Block address and data) in the factory. The DQ7 bit is set to ‘1’ and the Extended Block cannot be unprotected. C.2 Customer Lockable Extended Block A device where the Extended Block is customer lockable is delivered with the DQ7 bit set to ‘0’ and the Extended Block unprotected. It is up to the customer to program and protect the Extended Block but care must be taken because the protection of the Extended Block is not reversible. There are two ways of protecting the Extended Block: ● Issue the Enter Extended Block command to place the device in Extended Block mode, then use the In-System Technique with RP either at VIH or at VID (refer to Appendix D, Figure 22: In-System Equipment Group Protect flowchart and Figure 23: In-System Equipment Chip Unprotect flowchart, for a detailed explanation of the technique). Issue the Enter Extended Block command to place the device in Extended Block mode, then use the Programmer Technique (refer to Appendix D, Figure 20: Programmer Equipment Group Protect flowchart and Figure 21: Programmer Equipment Chip Unprotect flowchart, for a detailed explanation of the technique). ● 65/74 Extended Memory Block M29DW640F Once the Extended Block is programmed and protected, the Exit Extended Block command must be issued to exit the Extended Block mode and return the device to Read mode. Table 31. Device x8 000000h-00000Fh 000010h-00007Fh 000080h-0000FFh 1. See Table 24: Block addresses. 2. ENS = Electronic Serial Number. Extended Block address and data Address(1) x16 000000h-000007h 000008h-00003Fh 000040h-00007Fh Data Factory Locked Random Number Security Identification Number ESN(2) Unavailable Customer Lockable Determined by Customer 66/74 M29DW640F Block protection Appendix D Block protection Block protection can be used to prevent any operation from modifying the data stored in the memory. The blocks are protected in groups, refer to Appendix A, Table 24 for details of the Protection Groups. Once protected, Program and Erase operations within the protected group fail to change the data. There are three techniques that can be used to control Block Protection, these are the Programmer technique, the In-System technique and Temporary Unprotection. Temporary Unprotection is controlled by the Reset/Block Temporary Unprotection pin, RP; this is described in the Signal Descriptions section. To protect the Extended Block issue the Enter Extended Block command and then use either the Programmer or In-System technique. Once protected issue the Exit Extended Block command to return to read mode. The Extended Block protection is irreversible, once protected the protection cannot be undone. D.1 Programmer technique The Programmer technique uses high (VID) voltage levels on some of the bus pins. These cannot be achieved using a standard microprocessor bus, therefore the technique is recommended only for use in Programming Equipment. To protect a group of blocks follow the flowchart in Figure 20: Programmer Equipment Group Protect flowchart. To unprotect the whole chip it is necessary to protect all of the groups first, then all groups can be unprotected at the same time. To unprotect the chip follow Figure 21: Programmer Equipment Chip Unprotect flowchart. Table 32: Programmer technique bus operations, BYTE = VIH or VIL, gives a summary of each operation. The timing on these flowcharts is critical. Care should be taken to ensure that, where a pause is specified, it is followed as closely as possible. Do not abort the procedure before reaching the end. Chip Unprotect can take several seconds and a user message should be provided to show that the operation is progressing. D.2 In-System technique The In-System technique requires a high voltage level on the Reset/Blocks Temporary Unprotect pin, RP (1). This can be achieved without violating the maximum ratings of the components on the microprocessor bus, therefore this technique is suitable for use after the memory has been fitted to the system. To protect a group of blocks follow the flowchart in Figure 22: In-System Equipment Group Protect flowchart. To unprotect the whole chip it is necessary to protect all of the groups first, then all the groups can be unprotected at the same time. To unprotect the chip follow Figure 23: In-System Equipment Chip Unprotect flowchart. The timing on these flowcharts is critical. Care should be taken to ensure that, where a pause is specified, it is followed as closely as possible. Do not allow the microprocessor to service interrupts that will upset the timing and do not abort the procedure before reaching the end. Chip Unprotect can take several seconds and a user message should be provided to show that the operation is progressing. 67/74 Block protection M29DW640F Note: RP can be either at VIH or at VID when using the In-System Technique to protect the Extended Block. Programmer technique bus operations, BYTE = VIH or VIL E G W Address Inputs A0-A21 A9 = VID, A12-A21 Block Address Others = X A9 = VID, A12 = VIH, A15 = VIH Others = X A0 = VIL, A1 = VIH, A2 = VIL, A3 = VIL, A6 = VIL, A9 = VID, A12-A21 Block address Others = X A0 = VIL, A1 = VIH, A2 = VIL, A3 = VIL, A6 = VIH, A9 = VID, A12-A21 Block address Others = X Data Inputs/Outputs DQ15A–1, DQ14-DQ0 X X Table 32. Operation Block (Group) Protect(1) Chip Unprotect VIL VID VID VID VIL Pulse VIL Pulse Block (Group) Protect Verify VIL VIL VIH Pass = xx01h Retry = xx00h. Block (Group) Unprotect Verify VIL VIL VIH Pass = xx00h Retry = xx01h. 1. Block Protection Groups are shown in Appendix D, Table 24. 68/74 M29DW640F Figure 20. Programmer Equipment Group Protect flowchart START ADDRESS = GROUP ADDRESS Set-up Block protection W = VIH n=0 G, A9 = VID, E = VIL Wait 4µs W = VIL Protect Wait 100µs W = VIH E, G = VIH, A1 = VIH A0, A2, A3, A6 = VIL E = VIL Wait 4µs Verify G = VIL Wait 60ns Read DATA DATA = 01h YES A9 = VIH E, G = VIH End PASS NO ++n = 25 YES A9 = VIH E, G = VIH FAIL NO AI07756 1. Block Protection Groups are shown in Appendix D, Table 24. 69/74 Block protection Figure 21. Programmer Equipment Chip Unprotect flowchart START PROTECT ALL GROUPS n=0 CURRENT GROUP = 0 M29DW640F Set-up A6, A12, A15 = VIH(1) E, G, A9 = VID Wait 4µs Unprotect W = VIL Wait 10ms W = VIH E, G = VIH ADDRESS = CURRENT GROUP ADDRESS A0, A2, A3 = VIL A1, A6 = VIH E = VIL Wait 4µs INCREMENT CURRENT GROUP G = VIL Verify Wait 60ns Read DATA NO DATA = 00h YES NO ++n = 1000 YES LAST GROUP YES A9 = VIH E, G = VIH PASS NO End A9 = VIH E, G = VIH FAIL AI07757 1. Block Protection Groups are shown in Appendix D, Table 24. 70/74 M29DW640F Figure 22. In-System Equipment Group Protect flowchart Block protection START Set-up n=0 RP = VID WRITE 60h ADDRESS = GROUP ADDRESS A0, A2, A3, A6 = VIL, A1 = VIH WRITE 60h ADDRESS = GROUP ADDRESS A0, A2, A3, A6 = VIL, A1 = VIH Wait 100µs WRITE 40h ADDRESS = GROUP ADDRESS A0, A2, A3, A6 = VIL, A1 = VIH Verify Wait 4µs READ DATA ADDRESS = GROUP ADDRESS A0, A2, A3, A6 = VIL, A1 = VIH NO Protect DATA = 01h YES RP = VIH End ++n = 25 YES RP = VIH NO ISSUE READ/RESET COMMAND PASS ISSUE READ/RESET COMMAND FAIL AI07758 1. Block Protection Groups are shown in Appendix D, Table 24. 2. RP can be either at VIH or at VID when using the In-System Technique to protect the Extended Block. 71/74 Block protection Figure 23. In-System Equipment Chip Unprotect flowchart M29DW640F START PROTECT ALL GROUPS Set-up n=0 CURRENT GROUP = 0 RP = VID WRITE 60h ANY ADDRESS WITH A0, A2, A3, A6 = VIL, A1 = VIH Unprotect WRITE 60h ANY ADDRESS WITH A0, A2, A3 = VIL, A1, A6 = VIH Wait 10ms WRITE 40h ADDRESS = CURRENT GROUP ADDRESS A0, A2, A3 = VIL, A1, A6 = VIH Verify Wait 4µs READ DATA ADDRESS = CURRENT GROUP ADDRESS A0, A2, A3 = VIL, A1, A6 = VIH NO YES INCREMENT CURRENT GROUP DATA = 00h NO End ++n = 1000 YES RP = VIH LAST GROUP YES RP = VIH NO ISSUE READ/RESET COMMAND FAIL ISSUE READ/RESET COMMAND PASS AI07759 1. Block Protection Groups are shown in Appendix D, Table 24. 72/74 M29DW640F Revision history Revision history Table 33. Date 02-Dec-2005 Document revision history Revision 1.0 First issue. DQ7 changed to DQ7 for Program, Program During Erase Suspend and Program Error in Table 9: Status Register Bits. Converted to new template. Updated address values in Table 31: Extended Block address and data. Amended data in Table 28: Device Geometry Definition Applied Numonyx branding. Changes 10-Mar-2006 2.0 23-Aug-2006 10-Dec-2007 3 4 73/74 M29DW640F Please Read Carefully: INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH NUMONYX™ PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN NUMONYX'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, NUMONYX ASSUMES NO LIABILITY WHATSOEVER, AND NUMONYX DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO SALE AND/OR USE OF NUMONYX PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. Numonyx products are not intended for use in medical, life saving, life sustaining, critical control or safety systems, or in nuclear facility applications. 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