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M29W800FB9D11

M29W800FB9D11

  • 厂商:

    NUMONYX

  • 封装:

  • 描述:

    M29W800FB9D11 - Known good die, 8-Mbit (1 Mbit x 8 or 512 Kbits x 16), boot block, 3 V supply Flash ...

  • 数据手册
  • 价格&库存
M29W800FB9D11 数据手册
M29W800FB-KGD Known good die, 8-Mbit (1 Mbit x 8 or 512 Kbits x 16), boot block, 3 V supply Flash memory Preliminary Data Features ■ Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read Access times: 90 ns Programming time – 10 µs per byte/word typical 19 memory blocks – 1 boot block (top or bottom location) – 2 parameter and 16 main blocks Program/erase controller – Embedded byte/word program algorithms Erase suspend and resume modes – Read and program another block during erase suspend Unlock bypass program command – Faster production/batch programming Temporary block unprotection mode Common flash interface – 64-bit security code Low power consumption – Standby and automatic standby 100,000 program/erase cycles per block Electronic signature – Manufacturer code: 0020h – Bottom device code M29W800FB: 225Bh Wafer ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ March 2008 Rev 2 1/15 www.numonyx.com 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents M29W800FB-KGD Contents 1 2 3 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 KGD-specific DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Die specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3.1 3.2 Functional specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Physical specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 5 Product test flow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Handling instructions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.1 5.2 Processing instructions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Storage instructions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 7 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 M29W800FB-KGD List of tables List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Operating and AC measurement conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Physical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Pad numbers and coordinates . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 3/15 List of figures M29W800FB-KGD List of figures Figure 1. Figure 2. Figure 3. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Die pad identification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Known good die test flow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4/15 M29W800FB-KGD Description 1 Description The M29W800F is available as known good dice. Numonyx defines known good dice as standard products offered as dice and tested for functionality and speed. Numonyx's known good die products are as reliable and of the same quality as products delivered in packages. This datasheet describes the features specific to parts sold as known good dice. It should be read in conjunction with the M29W800F datasheet that detailfully describes the device operation. The M29W800F datasheet is available from the Numonyx website: www.numonyx.com. The M29W800FB-KGD is a 8-Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a single-word basis using a 2.7 V to 3.6 V. On power-up the memory defaults to its read mode where it can be read in the same way as a ROM or EPROM. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental program or erase commands from modifying the memory. Program and erase commands are written to the command interface of the memory. An on-chip program/erase controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards. The blocks in the memory are asymmetrically arranged. The first or last 64 Kbytes have been divided into four additional blocks. The 16-Kbyte boot block can be used for small initialization code to start the microprocessor, the two 8-Kbyte parameter blocks can be used for parameter storage and the remaining 32-Kbyte is a small main block where the application may be stored. Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory. They allow simple connection to most microprocessors, often without additional logic. For information on how to order these options refer to Table 5: Ordering information scheme. 5/15 Description Figure 1. Logic diagram VCC M29W800FB-KGD 19 A0-A18 W E G RP BYTE M29W800F 15 DQ0-DQ14 DQ15A–1 RB VSS AI05470D Table 1. Signal names Description Address inputs Data inputs/outputs Data inputs/outputs Data input/output or address input Chip Enable Output Enable Write Enable Reset/block temporary unprotect Ready/Busy output Byte/word organization select Supply voltage Ground Not connected internally Direction Inputs I/O I/O I/O Input Input Input Input Output Input Supply – – Signal A0-A18 DQ0-DQ7 DQ8-DQ14 DQ15A–1 E G W RP RB BYTE VCC VSS NC 6/15 M29W800FB-KGD KGD-specific DC and AC parameters 2 KGD-specific DC and AC parameters This section summarizes the operating and measurement conditions, and the DC and AC characteristics that differ from those of the packaged device. The parameters in the tables that follow are derived from tests performed under the measurement conditions specified in the full datasheet M29W800F. Designers should check that the operating conditions in their circuit match the measurement conditions when relying on the quoted parameters. Table 2. Operating and AC measurement conditions Value Parameter Min Ambient temperature (TA) Grade 3 –40 Max 125 °C Units 7/15 Die specifications M29W800FB-KGD 3 3.1 Die specifications Functional specification Refer to the M29W800F datasheet for the full functional and electrical specifications of the product. 3.2 Physical specification The physical specifications are shown in Table 3, while the die is illustrated in Figure 2, and the pad coordinates are given in Table 4. Table 3. Physical specifications Name Wafer diameter Die dimensions, X by Y (with scribe line) Die dimensions, X by Y (without scribe line) Wafer thickness Die backside (material) Die backside potential Number of bond pads per die Bond pad opening Bond pad metallization Bond pad metallization thickness Passivation Passivation thickness Maximum junction temperature (TJ) under bias Value 200 3337(X) × 1640(Y) 3257(X) × 1560(Y) 240 silicon ground 50 65 AlCu 710 HDP / SiN 0.8 / 0.55 125 Unit mm µm µm µm – – – µm (min) – nm – µm °C 8/15 M29W800FB-KGD Figure 2. Die pad identification 1 2 3 10 11 12 13 17 Die specifications 22 23 DIE ID Y 50 49 48 X 38 37 26 25 24 ai13448c 9/15 Die specifications Table 4. Pad name A0 A1 A2 A3 A4 A5 A6 A7 A17 A18 RB RP W NC(2) A8 A9 A10 A11 A12 A13 A14 A15 A16 A16 BYTE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 M29W800FB-KGD Pad numbers and coordinates Pad # X (µm) –1400.921 –1250.041 –1124.921 –1024.917 –924.913 –824.909 –724.905 –624.901 –524.897 –424.893 –284.574 –78.531 280.067 380 480.074 580.078 733.369 833.373 933.377 1033.381 1133.385 1258.505 1409.385 1414.242 1263.362 Y (µm) 679.567 679.567 679.567 679.567 679.567 679.567 679.567 679.567 679.567 679.567 679.567 679.567 679.567 679.567 679.567 679.567 679.567 679.567 679.567 679.567 679.567 679.567 679.567 –633.273 –633.273 Pad name GND(1) GND(1) DQ15 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VDD VDD DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 G GNDQ GNDQ E A0 Pad # 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 X (µm) 1138.242 1038.238 933.579 833.575 733.571 633.567 533.563 433.559 333.555 233.551 128.892 28.888 –112.81 –212.814 –312.818 –412.822 –512.826 –612.83 –712.834 –812.838 –917.498 –1017.502 –1117.506 –1254.549 –1405.778 Y (µm) –633.273 –633.273 –633.273 –633.273 –633.273 –633.273 –633.273 –633.273 –633.273 –633.273 –633.273 –633.273 –633.273 –633.273 –633.273 –633.273 –633.273 –633.273 –633.273 –633.273 –633.273 –633.273 –633.273 –633.273 –633.273 1. This pin must be grounded. 2. NC means that the pad is not connected. 10/15 M29W800FB-KGD Product test flow 4 Product test flow Numonyx implements quality assurance procedures throughout the product test flow. In addition, an off-line quality monitoring program is implemented to ensure that Numonyx’s KGD devices have the same level of reliability as the standard packaged devices. Figure 3 gives an overview of Numonyx’s known good die test flow. The burn-in step performs an electrical stress on the devices by executing write/erase cycles at 125 °C. This ensures that all the devices that fail early are removed from the population before proceeding to the following steps. The electrical wafer sort 1 (EWS1) step applies the same test procedure for both packaged and KGD devices. After EWS1, only wafers with a minimum yield are accepted for the following steps (minimum yield rule). The KGD1 test emulates the final test of packaged devices and is validated after correlating the results with standard test flow for packaged devices, to ensure the same reliability level for both test flows. The same test can be reproduced at a lower temperature (KGD2). Figure 3. Known good die test flow Burn-in on wafer Early failures scrap EWS1 @ 85 ˚C DC parameters Funtionality Programmability Erasability Bake 24 hrs @ 250 ˚C Data retention Laser repair Fuse options setting KGD1 @ 85 ˚C KGD2 @ lower temperature Packaging and shipment Laser check for redundancy DC parameters Funtionality Programmability Erasability AC parameters Visual inspection and QA acceptance AI11002 1. EWS = electrical wafer sort. 11/15 Handling instructions M29W800FB-KGD 5 5.1 Handling instructions Processing instructions Known good die products should not be exposed to ultraviolet light or be processed at temperatures greater than 250 °C. Failure to adhere to these processing instructions may cause permanent damage to the device. For best yield, Numonyx recommends assembly in a class 10K (or better) designated clean room. All standard ESD (electrostatic discharge) handling procedures should be observed. The die should be kept in an ESD-protected environment at all times during inspection and assembly. 5.2 Storage instructions Known good die products should be stored in a nitrogen purged atmosphere cabinet or in a vacuum-sealed bag. Moisture content of the storage facility should be maintained at 30% ± 10% relative humidity. 12/15 M29W800FB-KGD Ordering information 6 Ordering information Table 5. Example: Device type M29 Operating voltage W = VCC = 2.7 to 3.6 V Device function 800F = 8-Mbit (x 8/x 16), boot block Array matrix B = bottom boot Speed 9 = 90 ns Package D = known good die Temperature range 11 = device grade 3, automotive grade certified(1) –40 to 150 °C 1. Qualified & characterized according to AEC Q100 & Q003 or equivalent, advanced screening according to AEC Q001 & Q002 or equivalent. Ordering information scheme M29W800FB 9 D 11 Note: Devices are shipped from the factory with the memory content bits erased to ’1’. For a list of available options (speed, package, etc.) or for further information on any aspect of this device, please contact your nearest Numonyx Sales Office. 13/15 Revision history M29W800FB-KGD 7 Revision history Table 6. Date 20-Mar-2008 28-Mar-2008 Document revision history Version 1 2 Initial release. Applied Numonyx branding. Revision Details 14/15 M29W800FB-KGD Please Read Carefully: INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH NUMONYX™ PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN NUMONYX'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, NUMONYX ASSUMES NO LIABILITY WHATSOEVER, AND NUMONYX DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO SALE AND/OR USE OF NUMONYX PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. Numonyx products are not intended for use in medical, life saving, life sustaining, critical control or safety systems, or in nuclear facility applications. Numonyx may make changes to specifications and product descriptions at any time, without notice. Numonyx, B.V. may have patents or pending patent applications, trademarks, copyrights, or other intellectual property rights that relate to the presented subject matter. The furnishing of documents and other materials and information does not provide any license, express or implied, by estoppel or otherwise, to any such patents, trademarks, copyrights, or other intellectual property rights. Designers must not rely on the absence or characteristics of any features or instructions marked “reserved” or “undefined.” Numonyx reserves these for future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them. Contact your local Numonyx sales office or your distributor to obtain the latest specifications and before placing your product order. Copies of documents which have an order number and are referenced in this document, or other Numonyx literature may be obtained by visiting Numonyx's website at http://www.numonyx.com. Numonyx StrataFlash is a trademark or registered trademark of Numonyx or its subsidiaries in the United States and other countries. *Other names and brands may be claimed as the property of others. Copyright © 11/5/7, Numonyx, B.V., All Rights Reserved. 15/15
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