1N4148

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N4148; 1N4448 High-speed diodes Product data sheet Supersedes data of 2002 Jan 23 2004 Aug 10 NXP Semiconductors Product data sheet High-speed diodes FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 ns • General application • Continuous reverse voltage: max. 100 V • Repetitive peak reverse voltage: max. 100 V • Repetitive peak forward current: max. 450 mA. APPLICATIONS • High-speed switching. DESCRIPTION The 1N4148 and 1N4448 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages. MARKING TYPE NUMBER 1N4148 1N4448 ORDERING INFORMATION PACKAGE TYPE NUMBER NAME 1N4148 1N4448 − DESCRIPTION The diodes are type branded. handbook, halfpage k 1N4148; 1N4448 a MAM246 Fig.1 Simplified outline (SOD27; DO-35) and symbol. MARKING CODE 1N4148PH or 4148PH 1N4448 VERSION SOD27 hermetically sealed glass package; axial leaded; 2 leads 2004 Aug 10 2 NXP Semiconductors Product data sheet High-speed diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board; lead length 10 mm. ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF 1N4148 1N4448 IR IR Cd trr reverse current reverse current; 1N4448 diode capacitance reverse recovery time PARAMETER forward voltage see Fig.3 IF = 10 mA I F = 5 mA IF = 100 mA VR = 20 V; see Fig.5 VR = 20 V; Tj = 150 °C; see Fig.5 VR = 20 V; Tj = 100 °C; see Fig.5 f = 1 MHz; VR = 0 V; see Fig.6 − − − − CONDITIONS total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 − − − − see Fig.2; note 1 CONDITIONS − − − − 1N4148; 1N4448 MIN. MAX. 100 100 200 450 V V UNIT mA mA 4 1 0.5 500 +200 200 A A A mW °C °C −65 − MIN. 1 MAX. V V V UNIT 0.62 − 0.72 1 25 50 3 4 4 nA µA µA pF ns when switched from IF = 10 mA to − IR = 60 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 when switched from IF = 50 mA; tr = 20 ns; see Fig.8 − Vfr forward recovery voltage 2.5 V THERMAL CHARACTERISTICS SYMBOL Rth(j-tp) Rth(j-a) Note 1. Device mounted on a printed-circuit board without metallization pad. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length 10 mm lead length 10 mm; note 1 VALUE 240 350 UNIT K/W K/W 2004 Aug 10 3 NXP Semiconductors Product data sheet High-speed diodes GRAPHICAL DATA 1N4148; 1N4448 300 IF (mA) 200 mbg451 handbook, halfpage 600 MBG464 IF (mA) 400 (1) (2) (3) 100 200 0 0 100 Tamb (°C) 200 0 0 (1) Tj = 175 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. 1 VF (V) 2 Device mounted on an FR4 printed-circuit board; lead length 10 mm. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. 102 handbook, full pagewidth IFSM (A) MBG704 10 1 10−1 1 Based on square wave currents. Tj = 25 °C prior to surge. 10 102 103 tp (µs) 104 Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 2004 Aug 10 4 NXP Semiconductors Product data sheet High-speed diodes 1N4148; 1N4448 103 IR (µA) 102 mgd290 MGD004 handbook, halfpage 1.2 Cd (pF) 1.0 (1) (2) 10 0.8 1 10−1 0.6 10−2 0 100 Tj (°C) 200 0.4 0 10 VR (V) 20 (1) VR = 75 V; typical values. (2) VR = 20 V; typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Reverse current as a function of junction temperature. Fig.6 Diode capacitance as a function of reverse voltage; typical values. 2004 Aug 10 5 NXP Semiconductors Product data sheet High-speed diodes 1N4148; 1N4448 handbook, full pagewidth tr D.U.T. 10% SAMPLING OSCILLOSCOPE R i = 50 Ω VR 90% tp t RS = 50 Ω V = VR I F x R S IF IF t rr t (1) MGA881 input signal output signal (1) IR = 1 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω I 90% V R S = 50 Ω D.U.T. OSCILLOSCOPE R i = 50 Ω 10% MGA882 V fr t tr tp t input signal output signal Fig.8 Forward recovery voltage test circuit and waveforms. 2004 Aug 10 6 NXP Semiconductors Product data sheet High-speed diodes PACKAGE OUTLINE Hermetically sealed glass package; axial leaded; 2 leads 1N4148; 1N4448 SOD27 (1) b D L G1 L DIMENSIONS (mm are the original dimensions) UNIT mm b max. 0.56 D max. 1.85 G1 max. 4.25 L min. 25.4 0 1 scale 2 mm Note 1. The marking band indicates the cathode. OUTLINE VERSION SOD27 REFERENCES IEC A24 JEDEC DO-35 JEITA SC-40 EUROPEAN PROJECTION ISSUE DATE 97-06-09 05-12-22 2004 Aug 10 7 NXP Semiconductors Product data sheet High-speed diodes DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes PRODUCT STATUS(2) Development Qualification Production DEFINITION 1N4148; 1N4448 This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Aug 10 8 above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. 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Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/05/pp9 Date of release: 2004 Aug 10 Document order number: 9397 750 13541