1PS59SB14,115

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D114 1PS59SB10 series Schottky barrier (double) diodes Product specification 1996 Sep 20 Philips Semiconductors Product specification Schottky barrier (double) diodes FEATURES 1PS59SB10 series PINNING • Low forward voltage 1PS59SB. . PIN • Guard ring protected • Small SMD package. APPLICATIONS 10 14 15 16 1 a a1 a1 k1 2 n.c. k2 a2 k2 3 k k1, a2 k1, k2 a1, a2 • Ultra high-speed switching • Voltage clamping 3 1 MLC358 Fig.3 • Protection circuits page 2 1PS59SB14 diode configuration (symbol). 3 • Blocking diodes. DESCRIPTION 3 Planar Schottky barrier diodes encapsulated in a SC59 small plastic SMD package. Single diodes and double diodes with different pinning are available. 1 2 Top view MSA314 Fig.1 Simplified outline (SC59) and pin configuration. MARKING TYPE NUMBER MARKING CODE 1PS59SB10 10 1PS59SB14 14 1PS59SB15 15 1PS59SB16 16 1 MLC359 Fig.4 3 2 n.c. 1 MLC357 Fig.2 1996 Sep 20 1PS59SB15 diode configuration (symbol). 3 1 1PS59SB10 single diode configuration (symbol). 2 2 2 MLC360 Fig.5 1PS59SB16 diode configuration (symbol). Philips Semiconductors Product specification Schottky barrier (double) diodes 1PS59SB10 series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VR continuous reverse voltage − 30 V IF continuous forward current − 200 mA IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 − 300 mA IFSM non-repetitive peak forward current tp < 10 ms − 600 mA Ptot total power dissipation (per package) Tamb ≤ 25 °C − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 125 °C ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode VF forward voltage see Fig.6 IF = 0.1 mA 240 mV IF = 1 mA 320 mV IF = 10 mA 400 mV IF = 30 mA 500 mV IF = 100 mA 800 mV IR reverse current VR = 25 V; see Fig.7 2 µA trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.9 5 ns Cd diode capacitance f = 1 MHz; VR = 1 V; see Fig.8 10 pF THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Refer to SC59 standard mounting conditions. 1996 Sep 20 3 VALUE UNIT 500 K/W Philips Semiconductors Product specification Schottky barrier (double) diodes 1PS59SB10 series GRAPHICAL DATA MSA892 IF MSA893 10 3 3 10halfpage handbook, IR (µA) (1) (2) (3) (mA) 10 2 (1) 10 2 (2) 10 10 (1) 1 10 1 (2) (3) 1 (3) 10 1 0 0.4 0.8 VF (V) 0 1.2 (1) Tamb = 125 °C. (2) Tamb = 85 °C. 10 (3) Tamb = 25 °C. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.6 Fig.7 Forward current as a function of forward voltage; typical values. 20 30 VR (V) Reverse current as a function of reverse voltage; typical values. MSA891 15 Cd (pF) handbook, halfpage I F 10 dI F dt 5 10% t Qr 90% 0 0 10 20 V R (V) IR 30 tf MRC129 - 1 f = 1 MHz; Tamb = 25 °C. Fig.8 Diode capacitance as a function of reverse voltage; typical values. 1996 Sep 20 Fig.9 Reverse recovery definitions. 4 Philips Semiconductors Product specification Schottky barrier (double) diodes 1PS59SB10 series PACKAGE OUTLINE 1.65 1.25 handbook, full pagewidth 0.50 0.35 0.2 M A 0.100 0.013 1.3 1.0 A 3 3.0 2.5 1.7 1.3 2 1 2.1 1.7 3.1 2.7 0.6 0.2 MSA313 - 1 0.26 0.10 Dimensions in mm. Fig.10 SC59. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Sep 20 5