1PS70SB85

1PS70SB85

  • 厂商:

    NXP(恩智浦)

  • 封装:

  • 描述:

    1PS70SB85 - Schottky barrier (double) diodes - NXP Semiconductors

  • 详情介绍
  • 数据手册
  • 价格&库存
1PS70SB85 数据手册
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 1PS70SB82; 1PS70SB84; 1PS70SB85; 1PS70SB86 Schottky barrier (double) diodes Product data sheet 2001 Jan 18 NXP Semiconductors Product data sheet Schottky barrier (double) diodes 1PS70SB82; 1PS70SB84; 1PS70SB85; 1PS70SB86 FEATURES • Low forward voltage • Very small SMD plastic package • Low diode capacitance. APPLICATIONS • UHF mixers • Sampling circuits • Modulators • Phase detectors. DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT323 (SC-70) very small plastic SMD package. Single diodes and double diodes with different pinning are available. ESD sensitive device, observe handling precautions. MARKING TYPE NUMBER 1PS70SB82 1PS70SB84 1PS70SB85 1PS70SB86 MARKING CODE 88 87 85 86 PINNING PIN 1PS70SB82 1 2 3 1PS70SB84 1 2 3 1PS70SB85 1 2 3 1PS70SB86 1 2 3 k1 k2 a1 and a2 3 1 2 MLC359 SYMBOL 1 3 2 n.c. MLC357 a n.c. k Fig.2 1PS70SB82 single diode configuration (symbol). a1 k2 k1 and a2 a1 a2 k1 and k2 Fig.3 1PS70SB84 diode configuration (symbol). 1 3 2 MLC358 handbook, 2 columns 3 Fig.4 1PS70SB85 diode configuration (symbol). 1 Top view 2 MBC870 3 1 2 MLC360 Fig.1 Simplified outline (SOT323; SC-70) and pin configuration. Fig.5 1PS70SB86 diode configuration (symbol). 2001 Jan 18 2 NXP Semiconductors Product data sheet Schottky barrier (double) diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode VR IF Tstg Tj continuous reverse voltage continuous forward current storage temperature junction temperature PARAMETER 1PS70SB82; 1PS70SB84; 1PS70SB85; 1PS70SB86 MIN. − − −65 − MAX. UNIT 15 30 +150 125 V mA °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to (SOT323; SC-70) standard mounting conditions. ELECTRICAL CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL Per diode VF forward voltage see Fig.6 I F = 1 mA IF = 30 mA rD IR Cd Note 1. Pulsed test: tp = 300 μs; δ = 0.02. differential diode forward resistance continuous reverse current diode capacitance f = 1 MHz; IF = 5 mA; see Fig.9 VR = 1 V; note 1; see Fig.7 VR = 0; f = 1 MHz; see Fig.8 − − 12 − 1 340 700 − 0.2 − mV mV Ω μA pF PARAMETER CONDITIONS TYP. MAX. UNIT PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 625 UNIT K/W 2001 Jan 18 3 NXP Semiconductors Product data sheet Schottky barrier (double) diodes 1PS70SB82; 1PS70SB84; 1PS70SB85; 1PS70SB86 103 handbook, halfpage IF (mA) (1) MGT835 103 handbook, halfpage IR (μA) MGT836 (2) (3) 102 102 10 (1) 1 10 10−1 (2) (1) (3) (2) (3) 1 0 0.4 0.8 1.2 VF (V) 1.6 10− 2 0 5 10 VR (V) 15 (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.6 Forward current as a function of forward voltage; typical values. Fig.7 Reverse current as a function of reverse voltage; typical values. handbook, halfpage 1 MGT837 103 handbook, halfpage rD (Ω) 102 MGT838 Cd (pF) 0.8 0.6 10 0.4 0 2 4 6 8 VR (V) 10 1 10−1 1 10 IF (mA) 102 f = 1 MHz; Tamb = 25 °C. f = 1 MHz; Tamb = 25 °C. Fig.8 Diode capacitance as a function of reverse voltage; typical values. Fig.9 Differential diode forward resistance as a function of forward current; typical values. 2001 Jan 18 4 NXP Semiconductors Product data sheet Schottky barrier (double) diodes PACKAGE OUTLINE 1PS70SB82; 1PS70SB84; 1PS70SB85; 1PS70SB86 Plastic surface mounted package; 3 leads SOT323 D B E A X y HE vMA 3 Q A A1 c 1 e1 e bp 2 wM B Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 OUTLINE VERSION SOT323 REFERENCES IEC JEDEC EIAJ SC-70 EUROPEAN PROJECTION ISSUE DATE 97-02-28 2001 Jan 18 5 NXP Semiconductors Product data sheet Schottky barrier (double) diodes DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes PRODUCT STATUS(2) Development Qualification Production 1PS70SB82; 1PS70SB84; 1PS70SB85; 1PS70SB86 DEFINITION This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 2001 Jan 18 6 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp7 Date of release: 2001 Jan 18 Document order number: 9397 750 07669
1PS70SB85
1. 物料型号: - 1PS70SB82 - 1PS70SB84 - 1PS70SB85 - 1PS70SB86

2. 器件简介: - 这些是NXP半导体生产的肖特基势垒(双)二极管,采用SOT323(SC-70)非常小的塑料表面贴装封装。提供单二极管和双二极管,具有不同的引脚排列。这些是静电敏感器件,处理时需注意。

3. 引脚分配: - 1PS70SB82:1脚为a,2脚为n.c.(无连接),3脚为k。 - 1PS70SB84:1脚为a1,2脚为k2,3脚为k和a2。 - 1PS70SB85:1脚为a1,2脚为a2,3脚为k1和k2。 - 1PS70SB86:1脚为k1,2脚为k2,3脚为a1和a2。

4. 参数特性: - 低正向电压 - 非常小的SMD塑料封装 - 低二极管电容

5. 功能详解: - 这些二极管是平面肖特基势垒二极管,封装在SOT323(SC-70)非常小的塑料SMD封装中。

6. 应用信息: - UHF混频器 - 采样电路 - 调制器 - 相位检测器

7. 封装信息: - 塑料表面贴装封装,3引脚 - SOT323
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