2PB1219AS

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D187 2PB1219A PNP general purpose transistor Product data sheet Supersedes data of 1997 Mar 25 1999 Apr 12 NXP Semiconductors Product data sheet PNP general purpose transistor FEATURES • High current (max. 500 mA) • Low voltage (max. 50 V) • Low collector-emitter saturation voltage (max. 600 mV). APPLICATIONS • General purpose switching and amplification. DESCRIPTION handbook, halfpage 2PB1219A PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 PNP transistor in a SOT323; SC70 plastic package. NPN complement: 2PD1820A. 1 3 MARKING TYPE NUMBER 2PB1219AQ 2PB1219AR 2PB1219AS Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) D∗Q D∗R D∗S Fig.1 Simplified outline (SOT323; SC70) and symbol. 1 Top view 2 MAM048 2 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Refer to SOT323; SC70 standard mounting conditions. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. −60 −50 −5 −500 −1 −200 200 +150 150 +150 V V V mA A mA mW °C °C °C UNIT 1999 Apr 12 2 NXP Semiconductors Product data sheet PNP general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT323; SC70 standard mounting conditions. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain 2PB1219AQ 2PB1219AR 2PB1219AS hFE VCEsat VBEsat Cc fT DC current gain collector-emitter saturation voltage base-emitter saturation voltage collector capacitance transition frequency 2PB1219AQ 2PB1219AR 2PB1219AS Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. IC = −500 mA; VCE = −10 V; note 1 IC = −300 mA; IB = −30 mA; note 1 IC = −300 mA; IB = −30 mA; note 1 IE = ie = 0; VCB = −10 V; f = 1 MHz IC = 50 mA; VCE = −10 V; f = 100 MHz; note 1 CONDITIONS IE = 0; VCB = −20 V IE = 0; VCB = −20 V; Tj = 150 °C IC = 0; VEB = −4 V IC = −150 mA; VCE = −10 V; note 1 85 120 170 40 − − − 100 120 140 − − − MIN. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 2PB1219A VALUE 625 UNIT K/W MAX. −100 −5 −100 170 240 340 − −600 −1.5 15 − − − UNIT nA μA nA mV V pF MHz MHz MHz 1999 Apr 12 3 NXP Semiconductors Product data sheet PNP general purpose transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads 2PB1219A SOT323 D B E A X y HE vMA 3 Q A A1 c 1 e1 e bp 2 wM B Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 OUTLINE VERSION SOT323 REFERENCES IEC JEDEC EIAJ SC-70 EUROPEAN PROJECTION ISSUE DATE 97-02-28 1999 Apr 12 4 NXP Semiconductors Product data sheet PNP general purpose transistor DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes 1. Please consult the most recently issued document before initiating or completing a design. PRODUCT STATUS(2) Development Qualification Production DEFINITION 2PB1219A This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 1999 Apr 12 5 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/00/03/pp6 Date of release: 1999 Apr 12 Document order number: 9397 750 05589