74AUP1G18GF

74AUP1G18 Low-power 1-of-2 demultiplexer with 3-state deselected output Rev. 02 — 3 April 2008 Product data sheet 1. General description The 74AUP1G18 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V. This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial Power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. The 74AUP1G18 provides a 1-of-2 non-inverting demultiplexer with 3-state output. The 74AUP1G18 buffers the data on input pin (A) and passes it either to output 1Y or 2Y, depending on whether the state of the select input pin (S) is LOW or HIGH. 2. Features I Wide supply voltage range from 0.8 V to 3.6 V I High noise immunity I Complies with JEDEC standards: N JESD8-12 (0.8 V to 1.3 V) N JESD8-11 (0.9 V to 1.65 V) N JESD8-7 (1.2 V to 1.95 V) N JESD8-5 (1.8 V to 2.7 V) N JESD8-B (2.7 V to 3.6 V) I ESD protection: N HBM JESD22-A114E Class 3A exceeds 5000 V N MM JESD22-A115-A exceeds 200 V N CDM JESD22-C101C exceeds 1000 V I Low static power consumption; ICC = 0.9 µA (maximum) I Latch-up performance exceeds 100 mA per JESD 78 Class II I Inputs accept voltages up to 3.6 V I Low noise overshoot and undershoot < 10 % of VCC I IOFF circuitry provides partial Power-down mode operation I Multiple package options I Specified from −40 °C to +85 °C and −40 °C to +125 °C NXP Semiconductors 74AUP1G18 Low-power 1-of-2 demultiplexer with 3-state deselected output 3. Ordering information Table 1. Ordering information Package Temperature range Name 74AUP1G18GW 74AUP1G18GM 74AUP1G18GF −40 °C to +125 °C −40 °C to +125 °C −40 °C to +125 °C SC-88 XSON6 XSON6 Description plastic surface-mounted package; 6 leads Version SOT363 Type number plastic extremely thin small outline package; no leads; SOT886 6 terminals; body 1 × 1.45 × 0.5 mm plastic extremely thin small outline package; no leads; SOT891 6 terminals; body 1 × 1 × 0.5 mm 4. Marking Table 2. Marking Marking code pW pW pW Type number 74AUP1G18GW 74AUP1G18GM 74AUP1G18GF 5. Functional diagram 1Y 1 3 S A 2Y 6 4 mnb088 Fig 1. Logic symbol 74AUP1G18_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 3 April 2008 2 of 19 NXP Semiconductors 74AUP1G18 Low-power 1-of-2 demultiplexer with 3-state deselected output 6. Pinning information 6.1 Pinning 74AUP1G18 74AUP1G18 S GND 1 2 6 5 1Y GND VCC A A 3 001aae822 S 1 6 1Y S GND 74AUP1G18 1 2 3 6 5 4 1Y VCC 2Y 2 5 VCC 3 4 2Y A 4 2Y 001aad869 001aad870 Transparent top view Transparent top view Fig 2. Pin configuration SOT363 (SC-88) Fig 3. Pin configuration SOT886 (XSON6) Fig 4. Pin configuration SOT891 (XSON6) 6.2 Pin description Table 3. Symbol S GND A 2Y VCC 1Y Pin description Pin 1 2 3 4 5 6 Description data select ground (0 V) data input data output supply voltage data output 7. Functional description Table 4. Input S L L H H [1] Function table[1] Output A L H L H 1Y L H Z Z 2Y Z Z L H H = HIGH voltage level; L = LOW voltage level; Z = high-impedance OFF-state. 74AUP1G18_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 3 April 2008 3 of 19 NXP Semiconductors 74AUP1G18 Low-power 1-of-2 demultiplexer with 3-state deselected output 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol VCC IIK VI IOK VO IO ICC IGND Tstg Ptot [1] [2] Parameter supply voltage input clamping current input voltage Conditions VI < 0 V [1] Min −0.5 −50 −0.5 [1] Max +4.6 +4.6 ±50 +4.6 ±20 50 +150 250 Unit V mA V mA V mA mA mA °C mW output clamping current VO > VCC or VO < 0 V output voltage output current supply current ground current storage temperature total power dissipation Tamb = −40 °C to +125 °C [2] Active mode and Power-down mode VO = 0 V to VCC −0.5 −50 −65 - The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed. For SC-88 packages: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K. For XSON6 packages: above 45 °C the value of Ptot derates linearly with 2.4 mW/K. 9. Recommended operating conditions Table 6. Symbol VCC VI VO Tamb ∆t/∆V Recommended operating conditions Parameter supply voltage input voltage output voltage ambient temperature input transition rise and fall rate VCC = 0.8 V to 3.6 V Active mode Power-down mode; VCC = 0 V Conditions Min 0.8 0 0 0 −40 0 Max 3.6 3.6 VCC 3.6 +125 200 Unit V V V V °C ns/V 74AUP1G18_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 3 April 2008 4 of 19 NXP Semiconductors 74AUP1G18 Low-power 1-of-2 demultiplexer with 3-state deselected output 10. Static characteristics Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Tamb = 25 °C VIH HIGH-level input voltage VCC = 0.8 V VCC = 0.9 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V VIL LOW-level input voltage VCC = 0.8 V VCC = 0.9 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V VOH HIGH-level output voltage VI = VIH or VIL IO = −20 µA; VCC = 0.8 V to 3.6 V IO = −1.1 mA; VCC = 1.1 V IO = −1.7 mA; VCC = 1.4 V IO = −1.9 mA; VCC = 1.65 V IO = −2.3 mA; VCC = 2.3 V IO = −3.1 mA; VCC = 2.3 V IO = −2.7 mA; VCC = 3.0 V IO = −4.0 mA; VCC = 3.0 V VOL LOW-level output voltage VI = VIH or VIL IO = 20 µA; VCC = 0.8 V to 3.6 V IO = 1.1 mA; VCC = 1.1 V IO = 1.7 mA; VCC = 1.4 V IO = 1.9 mA; VCC = 1.65 V IO = 2.3 mA; VCC = 2.3 V IO = 3.1 mA; VCC = 2.3 V IO = 2.7 mA; VCC = 3.0 V IO = 4.0 mA; VCC = 3.0 V II IOZ IOFF ∆IOFF ICC ∆ICC CI CO 74AUP1G18_2 Conditions Min Typ Max - Unit V V V V 0.70 × VCC 0.65 × VCC 1.6 2.0 VCC − 0.1 1.11 1.32 2.05 1.9 2.72 2.6 [1] 0.8 1.7 0.30 × VCC V 0.35 × VCC V 0.7 0.9 0.1 0.3 × VCC 0.31 0.31 0.31 0.44 0.31 0.44 ±0.1 ±0.1 ±0.2 ±0.2 0.5 40 V V V V V V V V V V V V V V V V V V µA µA µA µA µA µA pF pF 0.75 × VCC - input leakage current OFF-state output current power-off leakage current additional power-off leakage current supply current additional supply current input capacitance output capacitance VI = GND to 3.6 V; VCC = 0 V to 3.6 V VI = VIH or VIL; VO = 0 V to 3.6 V; VCC = 0 V to 3.6 V VI or VO = 0 V to 3.6 V; VCC = 0 V VI or VO = 0 V to 3.6 V; VCC = 0 V to 0.2 V VI = GND or VCC; IO = 0 A; VCC = 0.8 V to 3.6 V VI = VCC − 0.6 V; IO = 0 A; VCC = 3.3 V VCC = 0 V to 3.6 V; VI = GND or VCC VO = GND; VCC = 0 V - © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 3 April 2008 5 of 19 NXP Semiconductors 74AUP1G18 Low-power 1-of-2 demultiplexer with 3-state deselected output Table 7. Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Tamb = −40 °C to +85 °C VIH HIGH-level input voltage VCC = 0.8 V VCC = 0.9 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V VIL LOW-level input voltage VCC = 0.8 V VCC = 0.9 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V VOH HIGH-level output voltage VI = VIH or VIL IO = −20 µA; VCC = 0.8 V to 3.6 V IO = −1.1 mA; VCC = 1.1 V IO = −1.7 mA; VCC = 1.4 V IO = −1.9 mA; VCC = 1.65 V IO = −2.3 mA; VCC = 2.3 V IO = −3.1 mA; VCC = 2.3 V IO = −2.7 mA; VCC = 3.0 V IO = −4.0 mA; VCC = 3.0 V VOL LOW-level output voltage VI = VIH or VIL IO = 20 µA; VCC = 0.8 V to 3.6 V IO = 1.1 mA; VCC = 1.1 V IO = 1.7 mA; VCC = 1.4 V IO = 1.9 mA; VCC = 1.65 V IO = 2.3 mA; VCC = 2.3 V IO = 3.1 mA; VCC = 2.3 V IO = 2.7 mA; VCC = 3.0 V IO = 4.0 mA; VCC = 3.0 V II IOZ IOFF ∆IOFF ICC ∆ICC input leakage current OFF-state output current power-off leakage current additional power-off leakage current supply current additional supply current VI = GND to 3.6 V; VCC = 0 V to 3.6 V VI = VIH or VIL; VO = 0 V to 3.6 V; VCC = 0 V to 3.6 V VI or VO = 0 V to 3.6 V; VCC = 0 V VI or VO = 0 V to 3.6 V; VCC = 0 V to 0.2 V VI = GND or VCC; IO = 0 A; VCC = 0.8 V to 3.6 V VI = VCC − 0.6 V; IO = 0 A; VCC = 3.3 V [1] Conditions Min Typ Max - Unit V V V V 0.70 × VCC 0.65 × VCC 1.6 2.0 VCC − 0.1 0.7 × VCC 1.03 1.30 1.97 1.85 2.67 2.55 - 0.30 × VCC V 0.35 × VCC V 0.7 0.9 0.1 0.3 × VCC 0.37 0.35 0.33 0.45 0.33 0.45 ±0.5 ±0.5 ±0.5 ±0.6 0.9 50 V V V V V V V V V V V V V V V V V V µA µA µA µA µA µA 74AUP1G18_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 3 April 2008 6 of 19 NXP Semiconductors 74AUP1G18 Low-power 1-of-2 demultiplexer with 3-state deselected output Table 7. Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Tamb = −40 °C to +125 °C VIH HIGH-level input voltage VCC = 0.8 V VCC = 0.9 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V VIL LOW-level input voltage VCC = 0.8 V VCC = 0.9 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V VOH HIGH-level output voltage VI = VIH or VIL IO = −20 µA; VCC = 0.8 V to 3.6 V IO = −1.1 mA; VCC = 1.1 V IO = −1.7 mA; VCC = 1.4 V IO = −1.9 mA; VCC = 1.65 V IO = −2.3 mA; VCC = 2.3 V IO = −3.1 mA; VCC = 2.3 V IO = −2.7 mA; VCC = 3.0 V IO = −4.0 mA; VCC = 3.0 V VOL LOW-level output voltage VI = VIH or VIL IO = 20 µA; VCC = 0.8 V to 3.6 V IO = 1.1 mA; VCC = 1.1 V IO = 1.7 mA; VCC = 1.4 V IO = 1.9 mA; VCC = 1.65 V IO = 2.3 mA; VCC = 2.3 V IO = 3.1 mA; VCC = 2.3 V IO = 2.7 mA; VCC = 3.0 V IO = 4.0 mA; VCC = 3.0 V II IOZ IOFF ∆IOFF ICC ∆ICC input leakage current OFF-state output current power-off leakage current additional power-off leakage current supply current additional supply current VI = GND to 3.6 V; VCC = 0 V to 3.6 V VI = VIH or VIL; VO = 0 V to 3.6 V; VCC = 0 V to 3.6 V VI or VO = 0 V to 3.6 V; VCC = 0 V VI or VO = 0 V to 3.6 V; VCC = 0 V to 0.2 V VI = GND or VCC; IO = 0 A; VCC = 0.8 V to 3.6 V VI = VCC − 0.6 V; IO = 0 A; VCC = 3.3 V [1] Conditions Min Typ Max - Unit V V V V 0.75 × VCC 0.70 × VCC 1.6 2.0 - 0.25 × VCC V 0.30 × VCC V 0.7 0.9 0.11 0.41 0.39 0.36 0.50 0.36 0.50 ±0.75 ±0.75 ±0.75 ±0.75 1.4 75 V V V V V V V V V V V V V V V V V µA µA µA µA µA µA VCC − 0.11 0.6 × VCC 0.93 1.17 1.77 1.67 2.40 2.30 - 0.33 × VCC V [1] One input at VCC − 0.6 V, other input at VCC or GND. 74AUP1G18_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 3 April 2008 7 of 19 NXP Semiconductors 74AUP1G18 Low-power 1-of-2 demultiplexer with 3-state deselected output 11. Dynamic characteristics Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7. Symbol Parameter Conditions Min CL = 5 pF tpd propagation delay A to nY; see Figure 5 VCC = 0.8 V VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V ten enable time S to nY; see Figure 6 VCC = 0.8 V VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V tdis disable time S to nY; see Figure 6 VCC = 0.8 V VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V CL = 10 pF tpd propagation delay A to nY; see Figure 5 VCC = 0.8 V VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V [2] [4] [3] [2] 25 °C Typ[1] Max −40 °C to +125 °C Min Max (85 °C) Max (125 °C) Unit 2.7 2.4 1.8 1.6 1.4 3.1 2.5 2.1 1.7 1.5 3.0 2.3 2.3 1.7 2.0 20.4 5.6 3.9 3.1 2.4 2.2 46.1 5.6 4.0 3.3 2.7 2.4 12.6 4.7 3.5 3.4 2.5 2.9 10.6 6.1 4.7 3.6 3.1 9.7 6.2 5.1 3.9 3.5 7.5 5.2 4.8 3.6 3.8 2.4 2.2 1.6 1.4 1.2 2.9 2.2 1.8 1.4 1.2 2.9 2.2 2.1 1.5 1.8 10.7 6.5 5.3 4.0 3.4 10.1 6.6 5.5 4.2 3.7 7.9 5.5 5.1 3.9 4.1 10.7 6.7 5.6 4.2 3.5 11.1 7.3 6.1 4.6 4.1 8.7 6.1 5.6 4.3 4.5 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 2.9 2.7 2.3 1.9 1.8 23.9 6.4 4.5 3.7 3.0 2.7 12.2 7.1 5.5 4.2 3.9 2.9 2.4 2.1 1.8 1.6 12.3 7.6 6.0 4.6 4.1 12.3 7.9 6.3 4.9 4.3 ns ns ns ns ns ns 74AUP1G18_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 3 April 2008 8 of 19 NXP Semiconductors 74AUP1G18 Low-power 1-of-2 demultiplexer with 3-state deselected output Table 8. Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7. Symbol Parameter Conditions Min ten enable time S to nY; see Figure 6 VCC = 0.8 V VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V tdis disable time S to nY; see Figure 6 VCC = 0.8 V VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V CL = 15 pF tpd propagation delay A to nY; see Figure 5 VCC = 0.8 V VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V ten enable time S to nY; see Figure 6 VCC = 0.8 V VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V tdis disable time S to nY; see Figure 6 VCC = 0.8 V VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V [4] [3] [2] [4] [3] 25 °C Typ[1] Max −40 °C to +125 °C Min Max (85 °C) 11.6 7.6 6.3 4.9 4.4 9.1 6.5 6.3 4.7 5.5 Max (125 °C) 12.8 8.4 6.9 5.4 4.8 10.0 7.2 6.9 5.2 6.1 Unit 3.6 2.9 2.5 2.1 2.0 4.1 3.2 3.3 2.4 3.1 50.1 6.5 4.6 3.9 3.2 2.9 14.5 5.8 4.4 4.5 3.3 4.1 11.1 7.0 5.8 4.6 4.2 8.7 6.1 6.0 4.4 5.2 3.3 2.6 2.2 1.7 1.6 3.9 3.0 3.2 2.2 3.0 ns ns ns ns ns ns ns ns ns ns ns ns 3.4 3.2 2.5 2.3 2.2 4.1 3.3 2.9 2.5 2.3 5.1 4.0 4.3 3.1 4.2 27.4 7.2 5.0 4.2 3.4 3.2 53.9 7.3 5.2 4.4 3.6 3.4 16.3 6.9 5.3 5.6 4.1 5.3 13.7 7.9 6.3 4.9 4.4 12.4 7.8 6.4 5.2 4.8 10.0 7.1 7.3 5.3 6.6 4.9 3.8 4.2 3.0 4.1 10.4 7.4 7.6 5.6 6.9 11.4 8.1 8.4 6.2 7.6 3.6 2.9 2.5 2.1 1.9 12.9 8.4 7.0 5.5 4.9 14.2 9.2 7.7 6.1 5.4 3.2 2.8 2.4 2.2 1.9 13.9 8.7 7.0 5.3 4.8 13.9 9.1 7.4 5.7 5.0 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 74AUP1G18_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 3 April 2008 9 of 19 NXP Semiconductors 74AUP1G18 Low-power 1-of-2 demultiplexer with 3-state deselected output Table 8. Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7. Symbol Parameter Conditions Min CL = 30 pF tpd propagation delay A to nY; see Figure 5 VCC = 0.8 V VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V ten enable time S to nY; see Figure 6 VCC = 0.8 V VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V tdis disable time S to nY; see Figure 6 VCC = 0.8 V VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V [4] [3] [2] 25 °C Typ[1] Max −40 °C to +125 °C Min Max (85 °C) Max (125 °C) Unit 4.1 3.7 3.4 3.2 3.1 5.3 4.4 4.0 3.4 3.2 8.2 6.5 7.4 5.3 7.6 37.8 9.5 6.6 5.5 4.5 4.2 66.3 9.6 6.8 5.7 4.8 4.5 21.8 10.4 8.0 9.0 6.5 9.0 18.0 10.4 8.3 6.3 5.8 16.4 10.0 8.2 6.6 6.1 14.3 10.0 11.0 7.9 10.7 4.1 3.8 3.3 3.0 2.9 4.7 3.9 3.4 2.9 2.8 8.0 6.3 7.3 5.2 7.4 18.5 11.5 9.2 6.8 6.6 17.0 10.9 8.9 7.0 6.5 14.7 10.4 11.3 8.2 11.0 18.9 12.1 9.8 7.3 7.0 18.7 12.0 9.8 7.7 7.2 16.2 11.4 12.4 9.0 12.1 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 74AUP1G18_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 3 April 2008 10 of 19 NXP Semiconductors 74AUP1G18 Low-power 1-of-2 demultiplexer with 3-state deselected output Table 8. Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7. Symbol Parameter Conditions Min CL = 5 pF, 10 pF, 15 pF and 30 pF CPD power dissipation capacitance fi = 1 MHz; VI = GND to VCC VCC = 0.8 V VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V [1] [2] [3] [4] [5] All typical values are measured at nominal VCC. tpd is the same as tPLH and tPHL. ten is the same as tPZH and tPZL. tdis is the same as tPHZ and tPLZ. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; Σ(CL × VCC2 × fo) = sum of the outputs. [5] 25 °C Typ[1] Max −40 °C to +125 °C Min Max (85 °C) Max (125 °C) Unit - 2.8 2.9 3.0 3.2 3.7 4.2 - - - - pF pF pF pF pF pF 12. Waveforms VI A input GND VM VM tPHL VOH tPLH nY output VOL VM VM mnb089 Measurement points are given in Table 9. Logic levels: VOL and VOH are typical output voltage drop that occur with the output load. Fig 5. The data input (A) to output (nY) propagation delays Table 9. VCC 0.8 V to 3.6 V 74AUP1G18_2 Measurement points Output VM 0.5 × VCC Input VM 0.5 × VCC VI VCC tr = tf ≤ 3.0 ns © NXP B.V. 2008. All rights reserved. Supply voltage Product data sheet Rev. 02 — 3 April 2008 11 of 19 NXP Semiconductors 74AUP1G18 Low-power 1-of-2 demultiplexer with 3-state deselected output VI S input GND VM t PLZ VCC t PZL nY output LOW-to-OFF OFF-to-LOW VOL t PHZ VOH VM VX t PZH VY VM GND nY output HIGH-to-OFF OFF-to-HIGH output enabled output disabled output enabled mnb090 Measurement points are given in Table 10. Logic levels: VOL and VOH are typical output voltage drop that occur with the output load. Fig 6. Enable and disable times Table 10. VCC 0.8 V to 1.6 V 1.65 V to 2.7 V 3.0 V to 3.6 V Measurement points Input VM 0.5 × VCC 0.5 × VCC 0.5 × VCC Output VM 0.5 × VCC 0.5 × VCC 0.5 × VCC VX VOL + 0.1 V VOL + 0.15 V VOL + 0.3 V VY VOH − 0.1 V VOH − 0.15 V VOH − 0.3 V Supply voltage 74AUP1G18_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 3 April 2008 12 of 19 NXP Semiconductors 74AUP1G18 Low-power 1-of-2 demultiplexer with 3-state deselected output VCC VEXT 5 kΩ G VI VO DUT RT CL RL 001aac521 Test data is given in Table 11. Definitions for test circuit: RL = Load resistance. CL = Load capacitance including jig and probe capacitance. RT = Termination resistance should be equal to the output impedance Zo of the pulse generator. VEXT = External voltage for measuring switching times. Fig 7. Load circuitry for switching times Table 11. VCC 0.8 V to 3.6 V [1] Test data Load CL RL [1] Supply voltage VEXT tPLH, tPHL open tPZH, tPHZ GND tPZL, tPLZ 2 × VCC 5 pF, 10 pF, 15 pF and 30 pF 5 kΩ or 1 MΩ For measuring enable and disable times RL = 5 kΩ, for measuring propagation delays, setup and hold times and pulse width RL = 1 MΩ. 74AUP1G18_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 3 April 2008 13 of 19 NXP Semiconductors 74AUP1G18 Low-power 1-of-2 demultiplexer with 3-state deselected output 13. Package outline Plastic surface-mounted package; 6 leads SOT363 D B E A X y HE vMA 6 5 4 Q pin 1 index A A1 1 e1 e 2 bp 3 wM B detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1 OUTLINE VERSION SOT363 REFERENCES IEC JEDEC JEITA SC-88 EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 Fig 8. Package outline SOT363 (SC-88) 74AUP1G18_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 3 April 2008 14 of 19 NXP Semiconductors 74AUP1G18 Low-power 1-of-2 demultiplexer with 3-state deselected output XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm SOT886 b 1 2 3 4× L1 L (2) e 6 e1 5 e1 4 6× (2) A A1 D E terminal 1 index area 0 DIMENSIONS (mm are the original dimensions) UNIT mm A (1) max 0.5 A1 max 0.04 b 0.25 0.17 D 1.5 1.4 E 1.05 0.95 e 0.6 e1 0.5 L 0.35 0.27 L1 0.40 0.32 1 scale 2 mm Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. OUTLINE VERSION SOT886 REFERENCES IEC JEDEC MO-252 JEITA EUROPEAN PROJECTION ISSUE DATE 04-07-15 04-07-22 Fig 9. Package outline SOT886 (XSON6) 74AUP1G18_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 3 April 2008 15 of 19 NXP Semiconductors 74AUP1G18 Low-power 1-of-2 demultiplexer with 3-state deselected output XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1 x 0.5 mm SOT891 1 2 b 3 4× (1) L1 e L 6 e1 5 e1 4 6× (1) A A1 D E terminal 1 index area 0 1 scale DIMENSIONS (mm are the original dimensions) UNIT mm A max 0.5 A1 max 0.04 b 0.20 0.12 D 1.05 0.95 E 1.05 0.95 e 0.55 e1 0.35 L 0.35 0.27 L1 0.40 0.32 2 mm Note 1. Can be visible in some manufacturing processes. OUTLINE VERSION SOT891 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-04-06 07-05-15 Fig 10. Package outline SOT891 (XSON6) 74AUP1G18_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 3 April 2008 16 of 19 NXP Semiconductors 74AUP1G18 Low-power 1-of-2 demultiplexer with 3-state deselected output 14. Abbreviations Table 12. Acronym CDM CMOS DUT ESD HBM MM TTL Abbreviations Description Charged Device Model Complementary Metal-Oxide Semiconductor Device Under Test ElectroStatic Discharge Human Body Model Machine Model Transistor-Transistor Logic 15. Revision history Table 13. Revision history Release date 20080403 Data sheet status Product data sheet Change notice Supersedes 74AUP1G18_1 Document ID 74AUP1G18_2 Modifications: • • • Section 2 “Features”: Changed: ESD HBM voltage from 4000 V to 5000 V. Section 10 “Static characteristics”: Changed: input capacitance. Section 11 “Dynamic characteristics”: Changed: propagation delays, enable times, disable times and typical power dissipation capacitance. 74AUP1G18_1 20061013 Product data sheet - - 74AUP1G18_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 3 April 2008 17 of 19 NXP Semiconductors 74AUP1G18 Low-power 1-of-2 demultiplexer with 3-state deselected output 16. Legal information 16.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 16.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 16.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 16.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 17. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com 74AUP1G18_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 3 April 2008 18 of 19 NXP Semiconductors 74AUP1G18 Low-power 1-of-2 demultiplexer with 3-state deselected output 18. Contents 1 2 3 4 5 6 6.1 6.2 7 8 9 10 11 12 13 14 15 16 16.1 16.2 16.3 16.4 17 18 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Recommended operating conditions. . . . . . . . 4 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5 Dynamic characteristics . . . . . . . . . . . . . . . . . . 8 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 14 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 17 Legal information. . . . . . . . . . . . . . . . . . . . . . . 18 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Contact information. . . . . . . . . . . . . . . . . . . . . 18 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 3 April 2008 Document identifier: 74AUP1G18_2