74AUP1G34GW

74AUP1G34 Low-power buffer Rev. 03 — 14 August 2008 Product data sheet 1. General description The 74AUP1G34 provides a low-power, low-voltage single buffer. Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V. This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. 2. Features I Wide supply voltage range from 0.8 V to 3.6 V I High noise immunity I Complies with JEDEC standards: N JESD8-12 (0.8 V to 1.3 V) N JESD8-11 (0.9 V to 1.65 V) N JESD8-7 (1.2 V to 1.95 V) N JESD8-5 (1.8 V to 2.7 V) N JESD8-B (2.7 V to 3.6 V) I ESD protection: N HBM JESD22-A114E Class 3A. Exceeds 5000 V N MM JESD22-A115-A exceeds 200 V N CDM JESD22-C101C exceeds 1000 V I Low static power consumption; ICC = 0.9 µA (maximum) I Latch-up performance exceeds 100 mA per JESD 78 Class II I Inputs accept voltages up to 3.6 V I Low noise overshoot and undershoot < 10 % of VCC I IOFF circuitry provides partial Power-down mode operation I Multiple package options I Specified from −40 °C to +85 °C and −40 °C to +125 °C NXP Semiconductors 74AUP1G34 Low-power buffer 3. Ordering information Table 1. Ordering information Package Temperature range Name 74AUP1G34GW 74AUP1G34GM 74AUP1G34GF −40 °C to +125 °C −40 °C to +125 °C −40 °C to +125 °C TSSOP5 XSON6 XSON6 Description plastic thin shrink small outline package; 5 leads; body width 1.25 mm Version SOT353-1 Type number plastic extremely thin small outline package; no leads; SOT886 6 terminals; body 1 × 1.45 × 0.5 mm plastic extremely thin small outline package; no leads; SOT891 6 terminals; body 1 × 1 × 0.5 mm 4. Marking Table 2. Marking Marking code aN aN aN Type number 74AUP1G34GW 74AUP1G34GM 74AUP1G34GF 5. Functional diagram 2 A Y 4 2 4 A Y 001aac536 001aac538 001aac537 Fig 1. Logic symbol Fig 2. IEC logic symbol Fig 3. Logic diagram 6. Pinning information 6.1 Pinning 74AUP1G34 74AUP1G34 n.c. n.c. A 1 2 GND GND 3 001aac535 74AUP1G34 1 6 VCC n.c. A 2 5 n.c. A 1 2 3 6 5 4 VCC n.c. Y 5 VCC 4 Y GND 3 4 Y 001aaf032 001aac534 Transparent top view Transparent top view Fig 4. Pin configuration SOT353-1 (TSSOP5) 74AUP1G34_3 Fig 5. Pin configuration SOT886 (XSON6) Fig 6. Pin configuration SOT891 (XSON6) © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 14 August 2008 2 of 15 NXP Semiconductors 74AUP1G34 Low-power buffer 6.2 Pin description Table 3. Symbol n.c. A GND Y n.c. VCC Pin description Pin TSSOP5 1 2 3 4 5 XSON6 1 2 3 4 5 6 not connected data input A ground (0 V) data output Y not connected supply voltage Description 7. Functional description Table 4. Input A L H [1] H = HIGH voltage level; L = LOW voltage level. Function table[1] Output Y L H 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol VCC IIK VI IOK VO IO ICC IGND Tstg Ptot [1] [2] Parameter supply voltage input clamping current input voltage output clamping current output voltage output current supply current ground current storage temperature total power dissipation Conditions VI < 0 V [1] Min −0.5 −50 −0.5 [1] Max +4.6 +4.6 ±50 +4.6 ±20 +50 +150 250 Unit V mA V mA V mA mA mA °C mW VO > VCC or VO < 0 V Active mode and Power-down mode VO = 0 V to VCC −0.5 −50 −65 Tamb = −40 °C to +125 °C [2] - The input and output voltage ratings may be exceeded if the input and output current ratings are observed. For TSSOP5 packages: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K. For XSON6 packages: above 45 °C the value of Ptot derates linearly with 2.4 mW/K. 74AUP1G34_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 14 August 2008 3 of 15 NXP Semiconductors 74AUP1G34 Low-power buffer 9. Recommended operating conditions Table 6. Symbol VCC VI VO Tamb ∆t/∆V Recommended operating conditions Parameter supply voltage input voltage output voltage ambient temperature input transition rise and fall rate VCC = 0.8 V to 3.6 V Active mode Power-down mode; VCC = 0 V Conditions Min 0.8 0 0 0 −40 0 Max 3.6 3.6 VCC 3.6 +125 200 Unit V V V V °C ns/V 10. Static characteristics Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Tamb = 25 °C VIH HIGH-state input voltage VCC = 0.8 V VCC = 0.9 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V VIL LOW-state input voltage VCC = 0.8 V VCC = 0.9 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V VOH HIGH-state output voltage VI = VIH or VIL IO = −20 µA; VCC = 0.8 V to 3.6 V IO = −1.1 mA; VCC = 1.1 V IO = −1.7 mA; VCC = 1.4 V IO = −1.9 mA; VCC = 1.65 V IO = −2.3 mA; VCC = 2.3 V IO = −3.1 mA; VCC = 2.3 V IO = −2.7 mA; VCC = 3.0 V IO = −4.0 mA; VCC = 3.0 V VOL LOW-state output voltage VI = VIH or VIL IO = 20 µA; VCC = 0.8 V to 3.6 V IO = 1.1 mA; VCC = 1.1 V IO = 1.7 mA; VCC = 1.4 V IO = 1.9 mA; VCC = 1.65 V IO = 2.3 mA; VCC = 2.3 V IO = 3.1 mA; VCC = 2.3 V IO = 2.7 mA; VCC = 3.0 V IO = 4.0 mA; VCC = 3.0 V 74AUP1G34_3 Conditions Min Typ Max - Unit V V V V 0.70 × VCC 0.65 × VCC 1.6 2.0 VCC − 0.1 1.11 1.32 2.05 1.9 2.72 2.6 - 0.30 × VCC V 0.35 × VCC V 0.7 0.9 0.1 0.3 × VCC 0.31 0.31 0.31 0.44 0.31 0.44 V V V V V V V V V V V V V V V V V V 0.75 × VCC - © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 14 August 2008 4 of 15 NXP Semiconductors 74AUP1G34 Low-power buffer Table 7. Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter II IOFF ∆IOFF ICC ∆ICC CI CO VIH input leakage current power-off leakage current additional power-off leakage current supply current additional supply current input capacitance output capacitance HIGH-state input voltage Conditions VI = GND to 3.6 V; VCC = 0 V to 3.6 V VI or VO = 0 V to 3.6 V; VCC = 0 V VI or VO = 0 V to 3.6 V; VCC = 0 V to 0.2 V VI = GND or VCC; IO = 0 A; VCC = 0.8 V to 3.6 V VI = VCC − 0.6 V; IO = 0 A; VCC = 3.3 V VCC = 0 V to 3.6 V; VI = GND or VCC VO = GND; VCC = 0 V VCC = 0.8 V VCC = 0.9 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V VIL LOW-state input voltage VCC = 0.8 V VCC = 0.9 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V VOH HIGH-state output voltage VI = VIH or VIL IO = −20 µA; VCC = 0.8 V to 3.6 V IO = −1.1 mA; VCC = 1.1 V IO = −1.7 mA; VCC = 1.4 V IO = −1.9 mA; VCC = 1.65 V IO = −2.3 mA; VCC = 2.3 V IO = −3.1 mA; VCC = 2.3 V IO = −2.7 mA; VCC = 3.0 V IO = −4.0 mA; VCC = 3.0 V VOL LOW-state output voltage VI = VIH or VIL IO = 20 µA; VCC = 0.8 V to 3.6 V IO = 1.1 mA; VCC = 1.1 V IO = 1.7 mA; VCC = 1.4 V IO = 1.9 mA; VCC = 1.65 V IO = 2.3 mA; VCC = 2.3 V IO = 3.1 mA; VCC = 2.3 V IO = 2.7 mA; VCC = 3.0 V IO = 4.0 mA; VCC = 3.0 V II IOFF ∆IOFF input leakage current power-off leakage current additional power-off leakage current VI = GND to 3.6 V; VCC = 0 V to 3.6 V VI or VO = 0 V to 3.6 V; VCC = 0 V VI or VO = 0 V to 3.6 V; VCC = 0 V to 0.2 V 0.1 0.3 × VCC 0.37 0.35 0.33 0.45 0.33 0.45 ±0.5 ±0.5 ±0.6 V V V V V V V V µA µA µA VCC − 0.1 0.7 × VCC 1.03 1.30 1.97 1.85 2.67 2.55 V V V V V V V V [1] Min - Typ 0.8 1.7 Max ±0.1 ±0.2 ±0.2 0.5 40 - Unit µA µA µA µA µA pF pF V V V V Tamb = −40 °C to +85 °C 0.70 × VCC 0.65 × VCC 1.6 2.0 - 0.30 × VCC V 0.35 × VCC V 0.7 0.9 V V 74AUP1G34_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 14 August 2008 5 of 15 NXP Semiconductors 74AUP1G34 Low-power buffer Table 7. Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter ICC ∆ICC supply current additional supply current Conditions VI = GND or VCC; IO = 0 A; VCC = 0.8 V to 3.6 V VI = VCC − 0.6 V; IO = 0 A; VCC = 3.3 V VCC = 0.8 V VCC = 0.9 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V VIL LOW-state input voltage VCC = 0.8 V VCC = 0.9 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V VOH HIGH-state output voltage VI = VIH or VIL IO = −20 µA; VCC = 0.8 V to 3.6 V IO = −1.1 mA; VCC = 1.1 V IO = −1.7 mA; VCC = 1.4 V IO = −1.9 mA; VCC = 1.65 V IO = −2.3 mA; VCC = 2.3 V IO = −3.1 mA; VCC = 2.3 V IO = −2.7 mA; VCC = 3.0 V IO = −4.0 mA; VCC = 3.0 V VOL LOW-state output voltage VI = VIH or VIL IO = 20 µA; VCC = 0.8 V to 3.6 V IO = 1.1 mA; VCC = 1.1 V IO = 1.7 mA; VCC = 1.4 V IO = 1.9 mA; VCC = 1.65 V IO = 2.3 mA; VCC = 2.3 V IO = 3.1 mA; VCC = 2.3 V IO = 2.7 mA; VCC = 3.0 V IO = 4.0 mA; VCC = 3.0 V II IOFF ∆IOFF ICC ∆ICC input leakage current power-off leakage current additional power-off leakage current supply current additional supply current VI = GND to 3.6 V; VCC = 0 V to 3.6 V VI or VO = 0 V to 3.6 V; VCC = 0 V VI or VO = 0 V to 3.6 V; VCC = 0 V to 0.2 V VI = GND or VCC; IO = 0 A; VCC = 0.8 V to 3.6 V VI = VCC − 0.6 V; IO = 0 A; VCC = 3.3 V [1] [1] Min - Typ - Max 0.9 50 Unit µA µA Tamb = −40 °C to +125 °C VIH HIGH-state input voltage 0.75 × VCC 0.70 × VCC 1.6 2.0 V V V V 0.25 × VCC V 0.30 × VCC V 0.7 0.9 0.11 0.41 0.39 0.36 0.50 0.36 0.50 ±0.75 ±0.75 ±0.75 1.4 75 V V V V V V V V V V V V V V V V V µA µA µA µA µA VCC − 0.11 0.6 × VCC 0.93 1.17 1.77 1.67 2.40 2.30 - 0.33 × VCC V [1] One input at VCC − 0.6 V, other input at VCC or GND. 74AUP1G34_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 14 August 2008 6 of 15 NXP Semiconductors 74AUP1G34 Low-power buffer 11. Dynamic characteristics Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8. Symbol Parameter Conditions Tamb = 25 °C Min CL = 5 pF tpd propagation delay A to Y; see Figure 7 VCC = 0.8 V VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V CL = 10 pF tpd propagation delay A to Y; see Figure 7 VCC = 0.8 V VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V CL = 15 pF tpd propagation delay A to Y; see Figure 7 VCC = 0.8 V VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V CL = 30 pF tpd propagation delay A to Y; see Figure 7 VCC = 0.8 V VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V [2] [2] [2] [2] Tamb = −40 °C to +125 °C Min Max (85 °C) Min Max (125 °C) Unit Typ[1] Max 2.6 2.1 1.8 1.5 1.4 15.0 4.7 3.4 2.9 2.3 2.1 9.2 5.7 4.5 3.5 3.2 2.0 1.6 1.4 1.2 1.0 10.0 6.5 5.2 4.2 3.8 2.0 1.6 1.4 1.2 1.0 11.0 7.2 5.8 4.6 4.2 ns ns ns ns ns ns 3.2 2.6 2.3 2.0 1.7 18.4 5.6 4.1 3.4 2.9 2.6 10.9 6.7 5.3 4.2 3.8 2.3 1.9 1.7 1.5 1.4 11.8 7.7 6.2 5.0 4.6 2.3 1.9 1.7 1.5 1.4 13.1 8.5 6.9 5.5 5.1 ns ns ns ns ns ns 3.6 3.0 2.6 2.3 2.1 21.9 6.4 4.6 3.9 3.3 3.1 12.6 7.6 6.0 4.8 4.2 2.6 2.2 2.0 1.8 1.6 13.8 8.9 7.2 5.7 5.0 2.6 2.2 2.0 1.8 1.6 15.2 9.8 7.9 6.3 5.5 ns ns ns ns ns ns 4.8 4.0 3.6 3.0 2.9 32.1 8.7 6.2 5.2 4.4 4.2 16.3 10.3 8.1 6.4 5.6 3.6 3.4 3.2 2.7 2.5 18.9 12.2 9.8 7.7 6.5 3.6 3.4 3.2 2.7 2.5 20.8 13.4 10.8 8.5 7.2 ns ns ns ns ns ns 74AUP1G34_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 14 August 2008 7 of 15 NXP Semiconductors 74AUP1G34 Low-power buffer Table 8. Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8. Symbol Parameter Conditions Tamb = 25 °C Min CPD power dissipation capacitance fi = 1 MHz; VI = GND to VCC VCC = 0.8 V VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V [1] [2] [3] All typical values are measured at nominal VCC. tpd is the same as tPLH and tPHL. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; Σ(CL × VCC2 × fo) = sum of outputs. [3] Tamb = −40 °C to +125 °C Min Max (85 °C) Min Max (125 °C) Unit Typ[1] Max - 2.5 2.6 2.7 2.9 3.4 4.0 - - - - - pF pF pF pF pF pF 12. Waveforms VI A input GND t PHL VOH Y output VOL VM mnb153 VM t PLH Measurement points are given in Table 9. Logic levels: VOL and VOH are typical output voltage drop that occur with the output load. Fig 7. The data input (A) to output (Y) propagation delays Table 9. VCC 0.8 V to 3.6 V Measurement points Output VM 0.5 × VCC Input VM 0.5 × VCC VI VCC tr = tf ≤ 3.0 ns Supply voltage 74AUP1G34_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 14 August 2008 8 of 15 NXP Semiconductors 74AUP1G34 Low-power buffer VCC VEXT 5 kΩ G VI VO DUT RT CL RL 001aac521 Test data is given in Table 10. Definitions for test circuit: RL = Load resistance. CL = Load capacitance including jig and probe capacitance. RT = Termination resistance should be equal to the output impedance Zo of the pulse generator. VEXT = External voltage for measuring switching times. Fig 8. Load circuitry for switching times Table 10. VCC 0.8 V to 3.6 V [1] Test data Load CL RL [1] Supply voltage VEXT tPLH, tPHL open tPZH, tPHZ GND tPZL, tPLZ 2 × VCC 5 pF, 10 pF, 15 pF and 30 pF 5 kΩ or 1 MΩ For measuring enable and disable times RL = 5 kΩ, for measuring propagation delays, setup and hold times and pulse width RL = 1 MΩ. 74AUP1G34_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 14 August 2008 9 of 15 NXP Semiconductors 74AUP1G34 Low-power buffer 13. Package outline TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1.25 mm SOT353-1 D E A X c y HE vMA Z 5 4 A2 A1 (A3) θ A 1 e e1 bp 3 wM detail X Lp L 0 1.5 scale 3 mm DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1.1 A1 0.1 0 A2 1.0 0.8 A3 0.15 bp 0.30 0.15 c 0.25 0.08 D(1) 2.25 1.85 E(1) 1.35 1.15 e 0.65 e1 1.3 HE 2.25 2.0 L 0.425 Lp 0.46 0.21 v 0.3 w 0.1 y 0.1 Z(1) 0.60 0.15 θ 7° 0° Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT353-1 REFERENCES IEC JEDEC MO-203 JEITA SC-88A EUROPEAN PROJECTION ISSUE DATE 00-09-01 03-02-19 Fig 9. Package outline SOT353-1 (TSSOP5) 74AUP1G34_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 14 August 2008 10 of 15 NXP Semiconductors 74AUP1G34 Low-power buffer XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm SOT886 b 1 2 3 4× L1 L (2) e 6 e1 5 e1 4 6× (2) A A1 D E terminal 1 index area 0 DIMENSIONS (mm are the original dimensions) UNIT mm A (1) max 0.5 A1 max 0.04 b 0.25 0.17 D 1.5 1.4 E 1.05 0.95 e 0.6 e1 0.5 L 0.35 0.27 L1 0.40 0.32 1 scale 2 mm Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. OUTLINE VERSION SOT886 REFERENCES IEC JEDEC MO-252 JEITA EUROPEAN PROJECTION ISSUE DATE 04-07-15 04-07-22 Fig 10. Package outline SOT886 (XSON6) 74AUP1G34_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 14 August 2008 11 of 15 NXP Semiconductors 74AUP1G34 Low-power buffer XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1 x 0.5 mm SOT891 1 2 b 3 4× (1) L1 e L 6 e1 5 e1 4 6× (1) A A1 D E terminal 1 index area 0 1 scale DIMENSIONS (mm are the original dimensions) UNIT mm A max 0.5 A1 max 0.04 b 0.20 0.12 D 1.05 0.95 E 1.05 0.95 e 0.55 e1 0.35 L 0.35 0.27 L1 0.40 0.32 2 mm Note 1. Can be visible in some manufacturing processes. OUTLINE VERSION SOT891 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-04-06 07-05-15 Fig 11. Package outline SOT891 (XSON6) 74AUP1G34_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 14 August 2008 12 of 15 NXP Semiconductors 74AUP1G34 Low-power buffer 14. Abbreviations Table 11: Acronym CDM CMOS DUT ESD HBM Abbreviations Description Charged Device Model Complementary Metal-Oxide Semiconductor Device Under Test ElectroStatic Discharge Human Body Model 15. Revision history Table 12. Revision history Release date 20080814 Data sheet status Product data sheet Change notice Supersedes 74AUP1G34_2 Document ID 74AUP1G34_3 Modifications: • • • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Section 11 “Dynamic characteristics” four propagation delay values have been changed. Product data sheet Product data sheet 74AUP1G34_1 - 74AUP1G34_2 74AUP1G34_1 20060704 20050804 74AUP1G34_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 14 August 2008 13 of 15 NXP Semiconductors 74AUP1G34 Low-power buffer 16. Legal information 16.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 16.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 16.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 16.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 17. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com 74AUP1G34_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 14 August 2008 14 of 15 NXP Semiconductors 74AUP1G34 Low-power buffer 18. Contents 1 2 3 4 5 6 6.1 6.2 7 8 9 10 11 12 13 14 15 16 16.1 16.2 16.3 16.4 17 18 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Recommended operating conditions. . . . . . . . 4 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4 Dynamic characteristics . . . . . . . . . . . . . . . . . . 7 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 14 August 2008 Document identifier: 74AUP1G34_3