74AVC16T245
16-bit dual supply translating transceiver with configurable voltage translation; 3-state
Rev. 3 — 9 June 2011 Product data sheet
1. General description
The 74AVC16T245 is a 16-bit transceiver with bidirectional level voltage translation and 3-state outputs.The device can be used as two 8-bit transceivers or as a 16-bit transceiver. It has dual supplies (VCC(A) and VCC(B)) for voltage translation and four 8-bit input-output ports (nAn and nBn) each with its own output enable (nOE) and send/receive (nDIR) input for direction control. VCC(A) and VCC(B) can be independently supplied at any voltage between 0.8 V and 3.6 V making the device suitable for low voltage translation between any of the following voltages: 0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V and 3.3 V. A HIGH on nDIR selects transmission from nAn to nBn while a LOW on nDIR selects transmission from nBn to nAn. A HIGH on nOE causes the outputs to assume a high-impedance OFF-state The device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing any damaging backflow current through the device when it is powered down. In suspend mode when either VCC(A) or VCC(B) are at GND level, both nAn and nBn are in the high-impedance OFF-state.
2. Features and benefits
Wide supply voltage range: VCC(A): 0.8 V to 3.6 V VCC(B): 0.8 V to 3.6 V Complies with JEDEC standards: JESD8-12 (0.8 V to 1.3 V) JESD8-11 (0.9 V to 1.65 V) JESD8-7 (1.2 V to 1.95 V) JESD8-5 (1.8 V to 2.7 V) JESD8-B (2.7 V to 3.6 V) ESD protection: HBM JESD22-A114F Class 3B exceeds 8000 V MM JESD22-A115-A exceeds 200 V CDM JESD22-C101D exceeds 1000 V Maximum data rates: 380 Mbit/s ( 1.8 V to 3.3 V translation) 200 Mbit/s ( 1.1 V to 3.3 V translation) 200 Mbit/s ( 1.1 V to 2.5 V translation) 200 Mbit/s ( 1.1 V to 1.8 V translation) 150 Mbit/s ( 1.1 V to 1.5 V translation)
NXP Semiconductors
74AVC16T245
16-bit dual supply translating transceiver; 3-state
100 Mbit/s ( 1.1 V to 1.2 V translation) Suspend mode Latch-up performance exceeds 100 mA per JESD 78 Class II Inputs accept voltages up to 3.6 V IOFF circuitry provides partial Power-down mode operation Multiple package options Specified from 40 C to +85 C and 40 C to +125 C
3. Ordering information
Table 1. Ordering information Package Temperature range Name 74AVC16T245DGG 74AVC16T245DGV 74AVC16T245EV 74AVC16T245BX 40 C to +125 C 40 C to +125 C 40 C to +125 C 40 C to +125 C TSSOP48 Description Version plastic thin shrink small outline package; 48 leads; SOT362-1 body width 6.1 mm Type number
TSSOP48[1] plastic thin shrink small outline package; 48 leads; SOT480-1 body width 4.4 mm; lead pitch 0.4 mm VFBGA56 plastic very thin fine-pitch ball grid array package; SOT702-1 56 balls; body 4.5 7 0.65 mm
HXQFN60U plastic thermal enhanced extremely thin quad flat SOT1134-1 package; no leads; 60 terminals; UTLP based; body 4 6 0.5 mm
[1]
Also known as TVSOP48.
4. Functional diagram
1DIR 1OE
2DIR 2OE
1A1 1B1 VCC(A) VCC(B)
2A1 2B1 VCC(A) VCC(B)
001aak426
to other seven channels
to other seven channels
Fig 1.
Logic diagram
74AVC16T245
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 9 June 2011
2 of 28
NXP Semiconductors
74AVC16T245
16-bit dual supply translating transceiver; 3-state
1B1 VCC(A) VCC(B)
1B2
1B3
1B4
1B5
1B6
1B7
1B8
1OE
1DIR 1A1 1A2 1A3 1A4 1A5 1A6 1A7 1A8
2B1 VCC(A) VCC(B)
2B2
2B3
2B4
2B5
2B6
2B7
2B8
2OE
2DIR 2A1 2A2 2A3 2A4 2A5 2A6 2A7 2A8
001aak425
Fig 2.
Logic symbol
74AVC16T245
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 9 June 2011
3 of 28
NXP Semiconductors
74AVC16T245
16-bit dual supply translating transceiver; 3-state
5. Pinning information
5.1 Pinning
74AVC16T245
1DIR 1B1 1B2 GND 1B3 1B4 VCC(B) 1B5 1B6 1 2 3 4 5 6 7 8 9 48 1OE 47 1A1 46 1A2 45 GND 44 1A3 43 1A4 42 VCC(A) 41 1A5 40 1A6 39 GND 38 1A7 37 1A8 36 2A1 35 2A2 34 GND 33 2A3 32 2A4 31 VCC(A) 30 2A5 29 2A6 28 GND 27 2A7 26 2A8 25 2OE
001aak427
GND 10 1B7 11 1B8 12 2B1 13 2B2 14 GND 15 2B3 16 2B4 17 VCC(B) 18 2B5 19 2B6 20 GND 21 2B7 22 2B8 23 2DIR 24
ball A1 74AVC16T245 index area 123456 A B C D E F G H J K
001aak428
Transparent top view
Fig 3. Pin configuration SOT362-1 and SOT480-1 (TSSOP48)
Fig 4.
Pin configuration SOT702-1 (VFBGA56)
74AVC16T245
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 9 June 2011
4 of 28
NXP Semiconductors
74AVC16T245
16-bit dual supply translating transceiver; 3-state
terminal 1 index area
D1
A32
A31
A30
A29
A28
A27
D4
A1
D5
B20
B19
B18
D8
A26
A2 B1 A3 B2 A4 B3 A5 B4 A6 B5 A7 B6 A8 B7 A9 GND(1) B11 B12 B13 B15 B16 B17
A25
A24
A23
A22
74AVC16T245
B14 A21
A20
A19
A18
A10
D6
B8
B9
B10
D7
A17
D2
A11
A12
A13
A14
A15
A16
D3
001aak429
Transparent top view
(1) The die substrate is attached to this pad using conductive die attach material. It can not be used as a supply pin or input.
Fig 5.
Pin configuration SOT1134-1 (HXQFN60U)
74AVC16T245
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 9 June 2011
5 of 28
NXP Semiconductors
74AVC16T245
16-bit dual supply translating transceiver; 3-state
5.2 Pin description
Table 2. Symbol Pin description Pin SOT362-1 and SOT480-1 1DIR, 2DIR 1B1 to 1B8 2B1 to 2B8 GND[1] VCC(B) 1OE, 2OE 1A1 to 1A8 2A1 to 2A8 VCC(A) n.c. 1, 24 2, 3, 5, 6, 8, 9, 11, 12 SOT702-1 A1, K1 B2, B1, C2, C1, D2, D1, E2, E1 SOT1134-1 A30, A13 B20, A31, D5, D1, A2, B2, B3, A5 A6, B5, B6, A9, D2, D6, A12, B8 direction control data input or output data input or output ground (0 V) supply voltage B (nBn inputs are referenced to VCC(B)) output enable input (active LOW) data input or output Description
13, 14, 16, 17, 19, 20, F1, F2, G1, G2, 22, 23 H1, H2, J1, J2 4, 10, 15, 21, 28, 34, 39, 45 7, 18 48, 25
B3, D3, G3, J3, J4, A32, A3, A8, A11, G4, D4, B4 A16, A19, A24, A27 C3, H3 A6, K6 A1, A10 A29, A14 B18, A28, D8, D4, A25, B16, B15, A22
47, 46, 44, 43, 41, 40, B5, B6, C5, C6, 38, 37 D5, D6, E5, E6 36, 35, 33, 32, 30, 29, F6, F5, G6, G5, 27, 26 H6, H5, J6, J5 31, 42 C4, H4
A21, B13, B12, A18, data input or output D3, D7, A15, B10 A17, A26 supply voltage A (nAn, nOE and nDIR inputs are referenced to VCC(A))
A2, A3, A4, A5, K2, A4, A7, A20, A23, not connected K3, K4, K5 B1, B4, B7, B9, B11, B14, B17, B19
[1]
All GND pins must be connected to ground (0 V).
6. Functional description
Table 3. Function table[1] Input nOE[2] L L H X nDIR[2] L H X X Input/output[3] nAn[2] nAn = nBn input Z Z nBn[2] input nBn = nAn Z Z Supply voltage VCC(A), VCC(B) 0.8 V to 3.6 V 0.8 V to 3.6 V 0.8 V to 3.6 V GND[3]
[1] [2] [3]
H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state. The nAn, nDIR and nOE input circuit is referenced to VCC(A); The nBn input circuit is referenced to VCC(B). If at least one of VCC(A) or VCC(B) is at GND level, the device goes into suspend mode.
74AVC16T245
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 9 June 2011
6 of 28
NXP Semiconductors
74AVC16T245
16-bit dual supply translating transceiver; 3-state
7. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol VCC(A) VCC(B) IIK VI IOK VO IO ICC IGND Tstg Ptot Parameter supply voltage A supply voltage B input clamping current input voltage output clamping current output voltage output current supply current ground current storage temperature total power dissipation Tamb = 40 C to +125 C; TSSOP48 package VFBGA56 package HXQFN60U package
[1] [2] [3] [4] [5]
[4] [5] [5]
Conditions
Min 0.5 0.5
Max +4.6 +4.6 +4.6 VCCO + 0.5 +4.6 50 100 +150 500 1000 1000
Unit V V mA V mA V V mA mA mA C mW mW mW
VI < 0 V
[1]
50 0.5 50
[1][2][3] [1] [2]
VO < 0 V Active mode Suspend or 3-state mode VO = 0 V to VCCO ICC(A) or ICC(B)
0.5 0.5 100 65 -
The minimum input voltage ratings and output voltage ratings may be exceeded if the input and output current ratings are observed. VCCO is the supply voltage associated with the output port. VCCO + 0.5 V should not exceed 4.6 V. Above 60 C the value of Ptot derates linearly with 5.5 mW/K. Above 70 C the value of Ptot derates linearly with 1.8 mW/K.
8. Recommended operating conditions
Table 5. Symbol VCC(A) VCC(B) VI VO Tamb t/V
[1] [2]
Recommended operating conditions Parameter supply voltage A supply voltage B input voltage output voltage ambient temperature input transition rise and fall rate VCCI = 0.8 V to 3.6 V
[2]
Conditions
Min 0.8 0.8 0
Max 3.6 3.6 3.6 VCCO 3.6 +125 5
Unit V V V V V C ns/V
Active mode Suspend or 3-state mode
[1]
0 0 40 -
VCCO is the supply voltage associated with the output port. VCCI is the supply voltage associated with the input port.
74AVC16T245
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 9 June 2011
7 of 28
NXP Semiconductors
74AVC16T245
16-bit dual supply translating transceiver; 3-state
9. Static characteristics
Table 6. Typical static characteristics at Tamb = 25 C[1][2] At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter VOH VOL II IOZ HIGH-level output voltage LOW-level output voltage input leakage current OFF-state output current Conditions VI = VIH or VIL IO = 1.5 mA; VCC(A) = VCC(B) = 0.8 V VI = VIH or VIL IO = 1.5 mA; VCC(A) = VCC(B) = 0.8 V nDIR, nOE input; VI = 0 V or 3.6 V; VCC(A) = VCC(B) = 0.8 V to 3.6 V A or B port; VO = 0 V or VCCO; VCC(A) = VCC(B) = 3.6 V suspend mode A port; VO = 0 V or VCCO; VCC(A) = 3.6 V; VCC(B) = 0 V suspend mode B port; VO = 0 V or VCCO; VCC(A) = 0 V; VCC(B) = 3.6 V IOFF power-off leakage current A port; VI or VO = 0 V to 3.6 V; VCC(A) = 0 V; VCC(B) = 0.8 V to 3.6 V B port; VI or VO = 0 V to 3.6 V; VCC(B) = 0 V; VCC(A) = 0.8 V to 3.6 V CI CI/O input capacitance input/output capacitance nDIR, nOE input; VI = 0 V or 3.3 V; VCC(A) = VCC(B) = 3.3 V A and B port; VO = 3.3 V or 0 V; VCC(A) = VCC(B) = 3.3 V
[3]
Min -
Typ 0.69 0.07
Max -
Unit V V
0.025 0.25 A 0.5 0.5 0.5 0.1 0.1 2.0 4.5 2.5 2.5 2.5 1 1 A A A A A pF pF
[3]
[3]
[1] [2] [3]
VCCO is the supply voltage associated with the output port. VCCI is the supply voltage associated with the data input port. For I/O ports, the parameter IOZ includes the input leakage current.
Table 7. Static characteristics [1][2] At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter VIH HIGH-level input voltage Conditions data input VCCI = 0.8 V VCCI = 1.1 V to 1.95 V VCCI = 2.3 V to 2.7 V VCCI = 3.0 V to 3.6 V nDIR, nOE input VCC(A) = 0.8 V VCC(A) = 1.1 V to 1.95 V VCC(A) = 2.3 V to 2.7 V VCC(A) = 3.0 V to 3.6 V 0.70VCC(A) 0.65VCC(A) 1.6 2 0.70VCC(A) 0.65VCC(A) 1.6 2 V V V V 0.70VCCI 0.65VCCI 1.6 2 0.70VCCI 0.65VCCI 1.6 2 V V V V 40 C to +85 C Min Max 40 C to +125 C Min Max Unit
74AVC16T245
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 9 June 2011
8 of 28
NXP Semiconductors
74AVC16T245
16-bit dual supply translating transceiver; 3-state
Table 7. Static characteristics …continued[1][2] At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter VIL LOW-level input voltage Conditions data input VCCI = 0.8 V VCCI = 1.1 V to 1.95 V VCCI = 2.3 V to 2.7 V VCCI = 3.0 V to 3.6 V nDIR, nOE input VCC(A) = 0.8 V VCC(A) = 1.1 V to 1.95 V VCC(A) = 2.3 V to 2.7 V VCC(A) = 3.0 V to 3.6 V VOH HIGH-level VI = VIH or VIL output voltage IO = 100 A; VCC(A) = VCC(B) = 0.8 V to 3.6 V IO = 3 mA; VCC(A) = VCC(B) = 1.1 V IO = 6 mA; VCC(A) = VCC(B) = 1.4 V IO = 8 mA; VCC(A) = VCC(B) = 1.65 V IO = 9 mA; VCC(A) = VCC(B) = 2.3 V IO = 12 mA; VCC(A) = VCC(B) = 3.0 V VOL LOW-level VI = VIH or VIL output voltage IO = 100 A; VCC(A) = VCC(B) = 0.8 V to 3.6 V IO = 3 mA; VCC(A) = VCC(B) = 1.1 V IO = 6 mA; VCC(A) = VCC(B) = 1.4 V IO = 8 mA; VCC(A) = VCC(B) = 1.65 V IO = 9 mA; VCC(A) = VCC(B) = 2.3 V IO = 12 mA; VCC(A) = VCC(B) = 3.0 V II IOZ input leakage current OFF-state output current nDIR, nOE input; VI = 0 V or 3.6 V; VCC(A) = VCC(B) = 0.8 V to 3.6 V A or B port; VO = 0 V or VCCO; VCC(A) = VCC(B) = 3.6 V suspend mode A port; VO = 0 V or VCCO; VCC(A) = 3.6 V; VCC(B) = 0 V suspend mode B port; VO = 0 V or VCCO; VCC(A) = 0 V; VCC(B) = 3.6 V
74AVC16T245
40 C to +85 C Min VCCO 0.1 0.85 1.05 1.2 1.75 2.3 Max 0.30VCCI 0.35VCCI 0.7 0.8 0.30VCC(A) 0.35VCC(A) 0.7 0.8 -
40 C to +125 C Min VCCO 0.1 0.85 1.05 1.2 1.75 2.3 Max 0.30VCCI 0.35VCCI 0.7 0.8
Unit
V V V V
0.30VCC(A) V 0.35VCC(A) V 0.7 0.8 V V V V V V V V
[3]
0.1 0.25 0.35 0.45 0.55 0.7 1 5 5
-
0.1 0.25 0.35 0.45 0.55 0.7 5 30 30
V V V V V V A A A
-
[3]
[3]
-
5
-
30
A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 9 June 2011
9 of 28
NXP Semiconductors
74AVC16T245
16-bit dual supply translating transceiver; 3-state
Table 7. Static characteristics …continued[1][2] At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter IOFF power-off leakage current Conditions A port; VI or VO = 0 V to 3.6 V; VCC(A) = 0 V; VCC(B) = 0.8 V to 3.6 V B port; VI or VO = 0 V to 3.6 V; VCC(B) = 0 V; VCC(A) = 0.8 V to 3.6 V VCC(A) = 0.8 V to 3.6 V; VCC(B) = 0.8 V to 3.6 V VCC(A) = 1.1 V to 3.6 V; VCC(B) = 1.1 V to 3.6 V VCC(A) = 3.6 V; VCC(B) = 0 V VCC(A) = 0 V; VCC(B) = 3.6 V B port; VI = 0 V or VCCI; IO = 0 A VCC(A) = 0.8 V to 3.6 V; VCC(B) = 0.8 V to 3.6 V VCC(A) = 1.1 V to 3.6 V; VCC(B) = 1.1 V to 3.6 V VCC(A) = 3.6 V; VCC(B) = 0 V VCC(A) = 0 V; VCC(B) = 3.6 V A plus B port (ICC(A) + ICC(B)); IO = 0 A; VI = 0 V or VCCI; VCC(A) = 0.8 V to 3.6 V; VCC(B) = 0.8 V to 3.6 V A plus B port (ICC(A) + ICC(B)); IO = 0 A; VI = 0 V or VCCI; VCC(A) = 1.1 V to 3.6 V; VCC(B) = 1.1 V to 3.6 V
[1] [2] [3] VCCO is the supply voltage associated with the output port. VCCI is the supply voltage associated with the data input port. For I/O ports, the parameter IOZ includes the input leakage current.
40 C to +85 C Min Max 5 5
40 C to +125 C Min Max 30 30
Unit A A
ICC
supply current A port; VI = 0 V or VCCI; IO = 0 A 5 5 30 25 25 30 25 25 55 20 20 125 100 100 125 100 100 185 A A A A A A A A A
-
45
-
150
A
Table 8. VCC(A) 0V 0.8 V 1.2 V 1.5 V 1.8 V 2.5 V 3.3 V
Typical total supply current (ICC(A) + ICC(B)) VCC(B) 0V 0 0.1 0.1 0.1 0.1 0.1 0.1 0.8 V 0.1 0.1 0.1 0.1 0.1 0.3 1.6 1.2 V 0.1 0.1 0.1 0.1 0.1 0.1 0.8 1.5 V 0.1 0.1 0.1 0.1 0.1 0.1 0.4 1.8 V 0.1 0.1 0.1 0.1 0.1 0.1 0.2 2.5 V 0.1 0.3 0.1 0.1 0.1 0.1 0.1 3.3 V 0.1 1.6 0.8 0.4 0.2 0.1 0.1 A A A A A A A Unit
74AVC16T245
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 9 June 2011
10 of 28
NXP Semiconductors
74AVC16T245
16-bit dual supply translating transceiver; 3-state
10. Dynamic characteristics
Table 9. Typical power dissipation capacitance at VCC(A) = VCC(B) and Tamb = 25 C [1][2] Voltages are referenced to GND (ground = 0 V). Symbol Parameter CPD power dissipation capacitance Conditions 0.8 V A port: (direction nAn to nBn); output enabled A port: (direction nAn to nBn); output disabled A port: (direction nBn to nAn); output enabled A port: (direction nBn to nAn); output disabled B port: (direction nAn to nBn); output enabled B port: (direction nAn to nBn); output disabled B port: (direction nBn to nAn); output enabled B port: (direction nBn to nAn); output disabled
[1] PD = CPD VCC2 fi N + (CL VCC2 fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; (CL VCC2 fo) = sum of the outputs. [2] fi = 10 MHz; VI = GND to VCC; tr = tf = 1 ns; CL = 0 pF; RL = .
VCC(A) = VCC(B) 1.2 V 0.2 0.2 9.7 0.6 9.7 0.6 0.2 0.2 1.5 V 0.2 0.2 9.8 0.6 9.8 0.6 0.2 0.2 1.8 V 0.2 0.2 10.3 0.7 10.3 0.7 0.2 0.2 2.5 V 0.3 0.3 11.7 0.7 11.7 0.7 0.3 0.3 3.3 V 0.4 0.4 13.7 0.7 13.7 0.7 0.4 0.4 0.2 0.2 9 0.6 9 0.6 0.2 0.2
Unit pF pF pF pF pF pF pF pF
CPD is used to determine the dynamic power dissipation (PD in W).
74AVC16T245
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 9 June 2011
11 of 28
NXP Semiconductors
74AVC16T245
16-bit dual supply translating transceiver; 3-state
Table 10. Typical dynamic characteristics at VCC(A) = 0.8 V and Tamb = 25 C [1] Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8; for wave forms see Figure 6 and Figure 7 Symbol Parameter tpd tdis ten Conditions 0.8 V propagation delay nAn to nBn nBn to nAn disable time enable time nOE to nAn nOE to nBn nOE to nAn nOE to nBn
[1]
VCC(B) 1.2 V 7.0 12.4 16.2 10.0 21.9 11.1 1.5 V 6.2 12.1 16.2 9.0 21.9 9.8 1.8 V 6.0 11.9 16.2 9.1 21.9 9.4 2.5 V 5.9 11.8 16.2 8.7 21.9 9.4 3.3 V 6.0 11.8 16.2 9.3 21.9 9.6 14.4 14.4 16.2 17.6 21.9 22.2
Unit ns ns ns ns ns ns
tpd is the same as tPLH and tPHL; tdis is the same as tPLZ and tPHZ; ten is the same as tPZL and tPZH.
Table 11. Typical dynamic characteristics at VCC(B) = 0.8 V and Tamb = 25 C [1] Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8; for wave forms see Figure 6 and Figure 7 Symbol Parameter tpd tdis ten Conditions 0.8 V propagation delay nAn to nBn nBn to nAn disable time enable time nOE to nAn nOE to nBn nOE to nAn nOE to nBn
[1]
VCC(A) 1.2 V 12.4 7.0 5.9 14.2 6.4 17.7 1.5 V 12.1 6.2 4.4 13.7 4.4 17.2 1.8 V 11.9 6.0 4.2 13.6 3.5 17.0 2.5 V 11.8 5.9 3.1 13.3 2.6 16.8 3.3 V 11.8 6.0 3.5 13.1 2.3 16.7 14.4 14.4 16.2 17.6 21.9 22.2
Unit ns ns ns ns ns ns
tpd is the same as tPLH and tPHL; tdis is the same as tPLZ and tPHZ; ten is the same as tPZL and tPZH.
74AVC16T245
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 9 June 2011
12 of 28
NXP Semiconductors
74AVC16T245
16-bit dual supply translating transceiver; 3-state
Table 12. Dynamic characteristics for temperature range 40 C to +85 C [1] Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8; for wave forms see Figure 6 and Figure 7. Symbol Parameter Conditions 1.2 V 0.1 V Min VCC(A) = 1.1 V to 1.3 V tpd tdis ten propagation delay disable time enable time nAn to nBn nBn to nAn nOE to nAn nOE to nBn nOE to nAn nOE to nBn VCC(A) = 1.4 V to 1.6 V tpd tdis ten propagation delay disable time enable time nAn to nBn nBn to nAn nOE to nAn nOE to nBn nOE to nAn nOE to nBn VCC(A) = 1.65 V to 1.95 V tpd tdis ten propagation delay disable time enable time nAn to nBn nBn to nAn nOE to nAn nOE to nBn nOE to nAn nOE to nBn VCC(A) = 2.3 V to 2.7 V tpd tdis ten propagation delay disable time enable time nAn to nBn nBn to nAn nOE to nAn nOE to nBn nOE to nAn nOE to nBn VCC(A) = 3.0 V to 3.6 V tpd tdis ten propagation delay disable time enable time nAn to nBn nBn to nAn nOE to nAn nOE to nBn nOE to nAn nOE to nBn
[1]
VCC(B) 1.5 V 0.1 V 1.8 V 0.15 V 2.5 V 0.2 V Min 0.5 0.5 1.5 1.5 1.0 1.1 0.5 0.5 1.5 1.5 1.0 1.0 0.5 0.5 1.5 1.5 1.0 1.0 0.5 0.5 1.0 1.0 0.5 0.5 0.5 0.5 0.5 1.0 0.5 0.5 Max 6.9 8.7 11.6 9.7 14.5 11.0 6.2 6.2 9.1 8.7 10.1 10.1 5.9 5.2 7.7 8.4 7.8 9.2 5.6 4.1 6.1 7.9 5.3 9.4 5.5 3.7 5.0 7.7 4.3 9.3 Min 0.5 0.5 1.5 1.5 1.0 1.1 0.5 0.5 1.5 1.5 1.0 0.5 0.5 0.5 1.5 1.5 1.0 0.5 0.5 0.5 1.0 1.0 0.5 0.5 0.5 0.5 0.5 1.0 0.5 0.5 Max 6.0 8.5 11.6 9.5 14.5 9.6 5.2 5.9 9.1 7.5 10.1 8.1 4.8 4.8 7.7 7.1 7.8 7.4 4.6 3.7 6.1 6.6 5.3 7.3 4.4 3.3 5.0 6.5 4.2 7.2 Min 0.5 0.5 1.5 1.0 1.0 1.0 0.5 0.5 1.5 1.0 1.0 0.5 0.5 0.5 1.5 1.0 1.0 0.5 0.5 0.5 1.0 1.0 0.5 0.5 0.5 0.5 0.5 1.0 0.5 0.5 Max 5.1 8.2 11.6 8.1 14.5 8.1 4.1 5.6 9.1 6.5 10.1 5.9 3.7 4.5 7.7 5.9 7.8 5.3 3.3 3.4 6.1 6.1 5.3 5.1 3.2 2.9 5.0 5.2 4.1 4.9 3.3 V 0.3 V Min 0.5 0.5 1.5 1.0 1.0 1.0 0.5 0.5 1.5 1.0 1.0 0.5 0.5 0.5 1.5 1.0 1.0 0.5 0.5 0.5 1.0 1.0 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Max 4.9 8.0 11.6 8.9 14.5 7.7 3.7 5.5 9.1 6.3 10.1 5.2 3.3 4.4 7.7 5.7 7.8 4.5 2.8 3.2 6.1 5.2 5.3 4.5 2.7 2.7 5.0 5.0 4.0 4.0 Max 9.2 9.2 11.6 12.5 14.5 14.9 8.7 6.9 9.1 11.4 10.1 13.5 8.5 6.0 7.7 11.1 7.8 13.0 8.2 5.1 6.1 10.6 5.3 12.5 8.0 4.9 5.0 10.3 4.3 12.4
Unit
0.5 0.5 1.5 1.5 1.0 1.1 0.5 0.5 1.5 1.5 1.0 1.0 0.5 0.5 1.5 1.5 1.0 1.0 0.5 0.5 1.0 1.0 0.5 0.5 0.5 0.5 0.5 1.0 0.5 0.5
ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
tpd is the same as tPLH and tPHL; tdis is the same as tPLZ and tPHZ; ten is the same as tPZL and tPZH.
74AVC16T245
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 9 June 2011
13 of 28
NXP Semiconductors
74AVC16T245
16-bit dual supply translating transceiver; 3-state
Table 13. Dynamic characteristics for temperature range 40 C to +125 C [1] Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8; for wave forms see Figure 6 and Figure 7 Symbol Parameter Conditions 1.2 V 0.1 V Min VCC(A) = 1.1 V to 1.3 V tpd tdis ten propagation delay disable time enable time nAn to nBn nBn to nAn nOE to nAn nOE to nBn nOE to nAn nOE to nBn VCC(A) = 1.4 V to 1.6 V tpd tdis ten propagation delay disable time enable time nAn to nBn nBn to nAn nOE to nAn nOE to nBn nOE to nAn nOE to nBn VCC(A) = 1.65 V to 1.95 V tpd tdis ten propagation delay disable time enable time nAn to nBn nBn to nAn nOE to nAn nOE to nBn nOE to nAn nOE to nBn VCC(A) = 2.3 V to 2.7 V tpd tdis ten propagation delay disable time enable time nAn to nBn nBn to nAn nOE to nAn nOE to nBn nOE to nAn nOE to nBn VCC(A) = 3.0 V to 3.6 V tpd tdis ten propagation delay disable time enable time nAn to nBn nBn to nAn nOE to nAn nOE to nBn nOE to nAn nOE to nBn
[1]
VCC(B) 1.5 V 0.1 V 1.8 V 0.15 V 2.5 V 0.2 V Min 0.5 0.5 1.5 1.5 1.0 1.1 0.5 0.5 1.5 1.5 1.0 1.0 0.5 0.5 1.5 1.5 1.0 1.0 0.5 0.5 1.0 1.0 0.5 0.5 0.5 0.5 0.5 1.0 0.5 0.5 Max 7.6 9.6 12.8 10.7 16.0 12.1 6.9 6.9 10.1 9.6 11.2 11.2 6.5 5.8 8.5 9.3 8.6 10.2 6.2 4.6 6.8 8.7 5.9 10.4 6.1 4.1 5.5 8.5 4.8 10.3 Min 0.5 0.5 1.5 1.5 1.0 1.1 0.5 0.5 1.5 1.5 1.0 0.5 0.5 0.5 1.5 1.5 1.0 0.5 0.5 0.5 1.0 1.0 0.5 0.5 0.5 0.5 0.5 1.0 0.5 0.5 Max 6.6 9.4 12.8 10.5 16.0 10.6 5.8 6.5 10.1 8.3 11.2 9.0 5.3 5.3 8.5 7.9 8.6 8.2 5.1 4.1 6.8 7.3 5.9 8.1 4.9 3.7 5.5 7.2 4.7 8.0 Min 0.5 0.5 1.5 1.0 1.0 1.0 0.5 0.5 1.5 1.0 1.0 0.5 0.5 0.5 1.5 1.0 1.0 0.5 0.5 0.5 1.0 1.0 0.5 0.5 0.5 0.5 0.5 1.0 0.5 0.5 Max 5.7 9.1 12.8 9.0 16.0 9.0 4.6 6.2 10.1 7.2 11.2 6.5 4.1 5.0 8.5 6.5 8.6 5.9 3.7 3.8 6.8 6.8 5.9 5.7 3.6 3.2 5.5 5.8 4.6 5.4 3.3 V 0.3 V Min 0.5 0.5 1.5 1.5 1.0 1.0 0.5 0.5 1.5 1.0 1.0 0.5 0.5 0.5 1.5 1.0 1.0 0.5 0.5 0.5 1.0 1.0 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Max 5.4 8.8 12.8 9.8 16.0 8.5 4.1 6.1 10.1 7.0 11.2 5.8 3.7 4.9 8.5 6.3 8.6 5.0 3.1 3.6 6.8 5.8 5.9 5.0 3.0 3.0 5.5 5.5 4.4 4.4 Max 10.2 10.2 12.8 13.8 16.0 16.4 9.6 7.6 10.1 12.6 11.2 14.9 9.4 6.6 8.5 12.3 8.6 14.3 9.1 5.7 6.8 11.7 5.9 13.8 8.8 5.4 5.5 11.4 4.8 13.7
Unit
0.5 0.5 1.5 1.5 1.0 1.1 0.5 0.5 1.5 1.5 1.0 1.0 0.5 0.5 1.5 1.5 1.0 1.0 0.5 0.5 1.0 1.0 0.5 0.5 0.5 0.5 0.5 1.0 0.5 0.5
ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
tpd is the same as tPLH and tPHL; tdis is the same as tPLZ and tPHZ; ten is the same as tPZL and tPZH.
74AVC16T245
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 9 June 2011
14 of 28
NXP Semiconductors
74AVC16T245
16-bit dual supply translating transceiver; 3-state
11. Waveforms
VI nAn, nBn input GND
VM
tPHL
VOH nBn, nAn output VOL
tPLH
VM
001aak285
Measurement points are given in Table 14. VOL and VOH are typical output voltage levels that occur with the output load.
Fig 6.
The data input (nAn, nBn) to output (nBn, nAn) propagation delay times
VI nOE input GND tPLZ VCCO output LOW-to-OFF OFF-to-LOW VOL tPHZ VOH output HIGH-to-OFF OFF-to-HIGH GND outputs enabled outputs disabled outputs enabled
001aak286
VM
tPZL
VM VX tPZH VY VM
Measurement points are given in Table 14. VOL and VOH are typical output voltage levels that occur with the output load.
Fig 7. Table 14.
Enable and disable times Measurement points Input[1] VM 0.5VCCI 0.5VCCI 0.5VCCI Output[2] VM 0.5VCCO 0.5VCCO 0.5VCCO VX VOL + 0.1 V VOL + 0.15 V VOL + 0.3 V VY VOH 0.1 V VOH 0.15 V VOH 0.3 V
Supply voltage VCC(A), VCC(B) 0.8 V to 1.6 V 1.65 V to 2.7 V 3.0 V to 3.6 V
[1] [2]
VCCI is the supply voltage associated with the data input port. VCCO is the supply voltage associated with the output port.
74AVC16T245
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 9 June 2011
15 of 28
NXP Semiconductors
74AVC16T245
16-bit dual supply translating transceiver; 3-state
VI negative pulse 0V
tW 90 % VM 10 % tf tr tr tf 90 % VM 10 % tW
VEXT VCC VI VO
RL
VM
VI positive pulse 0V
VM
G
RT
DUT
CL RL
001aae331
Test data is given in Table 15. RL = Load resistance. CL = Load capacitance including jig and probe capacitance. RT = Termination resistance. VEXT = External voltage for measuring switching times.
Fig 8. Table 15.
Load circuit for switching times Test data Input VI[1] VCCI VCCI VCCI t/V[2] 1.0 ns/V 1.0 ns/V 1.0 ns/V Load CL 15 pF 15 pF 15 pF RL 2 k 2 k 2 k VEXT tPLH, tPHL open open open tPZH, tPHZ GND GND GND tPZL, tPLZ[3] 2VCCO 2VCCO 2VCCO
Supply voltage VCC(A), VCC(B) 0.8 V to 1.6 V 1.65 V to 2.7 V 3.0 V to 3.6 V
[1] [2] [3]
VCCI is the supply voltage associated with the data input port. dV/dt 1.0 V/ns VCCO is the supply voltage associated with the output port.
74AVC16T245
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 9 June 2011
16 of 28
NXP Semiconductors
74AVC16T245
16-bit dual supply translating transceiver; 3-state
12. Typical propagation delay characteristics
001aai476 001aai477 (1) (2) (3) (4) (5) (6)
24 tpd (ns) 20
21 tpd (ns) 17
(1)
16
12
(2) (3) (4) (5) (6)
13
8
4 0 20 40 CL (pF) 60
9 0 20 40 CL (pF) 60
a. Propagation delay (nAn to nBn); VCC(A) = 0.8 V
(1) VCC(B) = 0.8 V. (2) VCC(B) = 1.2 V. (3) VCC(B) = 1.5 V. (4) VCC(B) = 1.8 V. (5) VCC(B) = 2.5 V. (6) VCC(B) = 3.3 V.
b. Propagation delay (nAn to nBn); VCC(B) = 0.8 V
(1) VCC(A) = 0.8 V. (2) VCC(A) = 1.2 V. (3) VCC(A) = 1.5 V. (4) VCC(A) = 1.8 V. (5) VCC(A) = 2.5 V. (6) VCC(A) = 3.3 V.
Fig 9.
Typical propagation delay versus load capacitance; Tamb = 25 C
74AVC16T245
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 9 June 2011
17 of 28
NXP Semiconductors
74AVC16T245
16-bit dual supply translating transceiver; 3-state
7 tPLH (ns) 5
001aai478 (1)
7 tPHL (ns)
001aai491
(1)
(2) (3) (4) (5)
5
(2) (3) (4) (5)
3
3
1 0 20 40 CL (pF) 60
1 0 20 40 CL (pF) 60
a. LOW to HIGH propagation delay (nAn to nBn); VCC(A) = 1.2 V
7 tPLH (ns) 5
001aai479 (1)
b. HIGH to LOW propagation delay (nAn to nBn); VCC(A) = 1.2 V
7 tPHL (ns)
(1) 001aai480
(2) (3) (4)
5
(2) (3)
3
(5)
3
(4) (5)
1 0 20 40 CL (pF) 60
1 0 20 40 CL (pF) 60
c. LOW to HIGH propagation delay (nAn to nBn); VCC(A) = 1.5 V
(1) VCC(B) = 1.2 V. (2) VCC(B) = 1.5 V. (3) VCC(B) = 1.8 V. (4) VCC(B) = 2.5 V. (5) VCC(B) = 3.3 V.
d. HIGH to LOW propagation delay (nAn to nBn); VCC(A) = 1.5 V
Fig 10. Typical propagation delay versus load capacitance; Tamb = 25 C
74AVC16T245
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 9 June 2011
18 of 28
NXP Semiconductors
74AVC16T245
16-bit dual supply translating transceiver; 3-state
7 tPLH (ns) 5
001aai481
7 tPHL (ns) 5
001aai482
(1)
(1)
(2) (3) (4) (2) (3)
3
(5)
3
(4) (5)
1 0 20 40 CL (pF) 60
1 0 20 40 CL (pF) 60
a. LOW to HIGH propagation delay (nAn to nBn); VCC(A) = 1.8 V
7 tPLH (ns) 5
(2) (3) (4) (5) 001aai483
b. HIGH to LOW propagation delay (nAn to nBn); VCC(A) = 1.8 V
7 tPHL (ns) 5
(1) 001aai486
(1)
(2) (3)
3
3
(4) (5)
1 0 20 40 CL (pF) 60
1 0 20 40 CL (pF) 60
c. LOW to HIGH propagation delay (nAn to nBn); VCC(A) = 2.5 V
(1) VCC(B) = 1.2 V. (2) VCC(B) = 1.5 V. (3) VCC(B) = 1.8 V. (4) VCC(B) = 2.5 V. (5) VCC(B) = 3.3 V.
d. HIGH to LOW propagation delay (nAn to nBn); VCC(A) = 2.5 V
Fig 11. Typical propagation delay versus load capacitance; Tamb = 25 C
74AVC16T245
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 9 June 2011
19 of 28
NXP Semiconductors
74AVC16T245
16-bit dual supply translating transceiver; 3-state
7 tPLH (ns) 5
001aai485
7 tPHL (ns) 5
001aai484
(1)
(1)
(2) (2) (3) (3)
3
(4) (5)
3
(4) (5)
1 0 20 40 CL (pF) 60
1 0 20 40 CL (pF) 60
a. LOW to HIGH propagation delay (nAn to nBn); VCC(A) = 3.3 V
(1) VCC(B) = 1.2 V. (2) VCC(B) = 1.5 V. (3) VCC(B) = 1.8 V. (4) VCC(B) = 2.5 V. (5) VCC(B) = 3.3 V.
b. HIGH to LOW propagation delay (nAn to nBn); VCC(A) = 3.3 V
Fig 12. Typical propagation delay versus load capacitance; Tamb = 25 C
74AVC16T245
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 9 June 2011
20 of 28
NXP Semiconductors
74AVC16T245
16-bit dual supply translating transceiver; 3-state
13. Package outline
TSSOP48: plastic thin shrink small outline package; 48 leads; body width 6.1 mm SOT362-1
D
E
A X
c y HE vMA
Z
48
25
Q A2 A1 pin 1 index Lp L (A 3) A
θ
1
e bp
24
wM
detail X
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions). UNIT mm A max. 1.2 A1 0.15 0.05 A2 1.05 0.85 A3 0.25 bp 0.28 0.17 c 0.2 0.1 D (1) 12.6 12.4 E (2) 6.2 6.0 e 0.5 HE 8.3 7.9 L 1 Lp 0.8 0.4 Q 0.50 0.35 v 0.25 w 0.08 y 0.1 Z 0.8 0.4 θ 8o o 0
Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic interlead protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT362-1 REFERENCES IEC JEDEC MO-153 JEITA EUROPEAN PROJECTION
ISSUE DATE 99-12-27 03-02-19
Fig 13. Package outline SOT362-1 (TSSOP48)
74AVC16T245 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 9 June 2011
21 of 28
NXP Semiconductors
74AVC16T245
16-bit dual supply translating transceiver; 3-state
TSSOP48: plastic thin shrink small outline package; 48 leads; body width 4.4 mm; lead pitch 0.4 mm
SOT480-1
D
E
A X
c y HE vMA
Z
48
25
Q A2 A1 pin 1 index Lp L detail X θ (A 3) A
1
e bp
24
wM
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1.1 A1 0.15 0.05 A2 0.95 0.85 A3 0.25 bp 0.23 0.13 c 0.20 0.09 D (1) 9.8 9.6 E (2) 4.5 4.3 e 0.4 HE 6.6 6.2 L 1 Lp 0.7 0.5 Q 0.4 0.3 v 0.2 w 0.07 y 0.08 Z (1) 0.4 0.1 θ 8o 0o
Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic interlead protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT480-1 REFERENCES IEC JEDEC MO-153 JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-18
Fig 14. Package outline SOT480-1 (TSSOP48)
74AVC16T245 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 9 June 2011
22 of 28
NXP Semiconductors
74AVC16T245
16-bit dual supply translating transceiver; 3-state
VFBGA56: plastic very thin fine-pitch ball grid array package; 56 balls; body 4.5 x 7 x 0.65 mm
SOT702-1
D
B
A
ball A1 index area
E
A
A2 A1
detail X
e1 e
1/2
b e
CAB ∅w M C
∅v M
C y1 C y
K J H e G F E D C B A ball A1 index area 1 2 3 4 5 6
1/2
e2 e X
DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1 A1 0.3 0.2 A2 0.7 0.6 b 0.45 0.35 D 4.6 4.4 E 7.1 6.9 e 0.65 e1 3.25 e2 5.85 v 0.15 w 0.08 y 0.08 y1 0.1 0 2.5 scale 5 mm
OUTLINE VERSION SOT702-1
REFERENCES IEC JEDEC MO-225 JEITA
EUROPEAN PROJECTION
ISSUE DATE 02-08-08 03-07-01
Fig 15. Package outline SOT702-1 (VFBGA56)
74AVC16T245 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 9 June 2011
23 of 28
NXP Semiconductors
74AVC16T245
16-bit dual supply translating transceiver; 3-state
HXQFN60U: plastic thermal enhanced extremely thin quad flat package; no leads; 60 terminals; UTLP based; body 4 x 6 x 0.5 mm
D B A
SOT1134-1
terminal 1 index area
E
A
A1
detail X
e2 e1 1/2 e v w L1 CAB C D2 D6 A10 eR B7 e b A11 B8 B10 A16 D7 A17 B11 D3 v w CAB C y1 C C y
L
e
Eh 1/2 e B1 A1 terminal 1 index area D5 D1 B20 A32 Dh k 0 Dimensions Unit mm A A1 b D 4.1 4.0 3.9 Dh 1.90 1.85 1.80 E 6.1 6.0 5.9 Eh 3.90 3.85 3.80 e 0.5 e1 1 2.5 scale e2 2.5 B18 A27 D8 D4 B17 A26
e3
e4
X
5 mm
e3 3
e4 4.5
eR 0.5
k
L
L1 0.125 0.075 0.025
v
w
y
y1 0.1
sot1134-1_po
max 0.50 0.05 0.35 nom 0.48 0.02 0.30 min 0.46 0.00 0.25
0.25 0.35 0.20 0.30 0.15 0.25
0.07 0.05 0.08
Outline version SOT1134-1
References IEC --JEDEC --JEITA ---
European projection
Issue date 08-12-17 09-01-22
Fig 16. Package outline SOT1134-1 (HXQFN60U)
74AVC16T245 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 9 June 2011
24 of 28
NXP Semiconductors
74AVC16T245
16-bit dual supply translating transceiver; 3-state
14. Abbreviations
Table 16. Acronym CDM DUT ESD HBM MM Abbreviations Description Charged Device Model Device Under Test ElectroStatic Discharge Human Body Model Machine Model
15. Revision history
Table 17. Revision history Release date 20110609 Data sheet status Product data sheet Product data sheet Change notice Supersedes 74AVC16T245 v.2 74AVC16T245 v.1 Document ID 74AVC16T245 v.3 Modifications: 74AVC16T245 v.2 Modifications: 74AVC16T245 v.1
• •
74AVC16T245BQ changed to 74AVC16T245BX for HXQFN60U (SOT1134-1) package. 74AVC16T245BQ changed from HUQFN60U (SOT1025-1) to HXQFN60U (SOT1134-1) package. Product data sheet -
20100330
20091001
74AVC16T245
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 9 June 2011
25 of 28
NXP Semiconductors
74AVC16T245
16-bit dual supply translating transceiver; 3-state
16. Legal information
16.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
16.2 Definitions
Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
16.3 Disclaimers
Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. The product is not designed, authorized or warranted to be
74AVC16T245
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 9 June 2011
26 of 28
NXP Semiconductors
74AVC16T245
16-bit dual supply translating transceiver; 3-state
Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
16.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
17. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
74AVC16T245
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 9 June 2011
27 of 28
NXP Semiconductors
74AVC16T245
16-bit dual supply translating transceiver; 3-state
18. Contents
1 2 3 4 5 5.1 5.2 6 7 8 9 10 11 12 13 14 15 16 16.1 16.2 16.3 16.4 17 18 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 4 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 6 Functional description . . . . . . . . . . . . . . . . . . . 6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 7 Recommended operating conditions. . . . . . . . 7 Static characteristics. . . . . . . . . . . . . . . . . . . . . 8 Dynamic characteristics . . . . . . . . . . . . . . . . . 11 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Typical propagation delay characteristics . . 17 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 21 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 25 Legal information. . . . . . . . . . . . . . . . . . . . . . . 26 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 26 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Contact information. . . . . . . . . . . . . . . . . . . . . 27 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 9 June 2011 Document identifier: 74AVC16T245