74HC10DB,112

74HC10; 74HCT10 Triple 3-input NAND gate Rev. 3 — 5 August 2016 Product data sheet 1. General description The 74HC10; 74HCT10 is a triple 3-input NAND gate. Inputs include clamp diodes that enable the use of current limiting resistors to interface inputs to voltages in excess of VCC. 2. Features and benefits  Complies with JEDEC standard JESD7A  Input levels:  For74HC10: CMOS level  For 74HCT10: TTL level  Complies with JEDEC standard no. 7A  ESD protection:  HBM JESD22-A114F exceeds 2000 V  MM JESD22-A115-A exceeds 200 V  Multiple package options  Specified from 40 C to +85 C and from 40 C to +125 C 3. Ordering information Table 1. Ordering information Type number 74HC10D Package Temperature range Name Description 40 C to +125 C SO14 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 Version 40 C to +125 C SSOP14 plastic shrink small outline package; 14 leads; body width 5.3 mm SOT337-1 40 C to +125 C TSSOP14 plastic thin shrink small outline package; 14 leads; body width 4.4 mm SOT402-1 74HCT10D 74HC10DB 74HCT10DB 74HC10PW 74HCT10PW 74HC10; 74HCT10 NXP Semiconductors Triple 3-input NAND gate 4. Functional diagram    %  &  $   $ < &  $  %  &       $ <     < %   PQD Fig 1.   < %    & PQD Logic symbol Fig 2. IEC logic symbol Fig 3. PQD Logic diagram (one gate) 5. Pinning information 5.1 Pinning +& +&7 +& +&7 $   9&& %   & $  $   < %   9&&  & %   & $   < %   &  % &   %  <   $ *1'   < & < *1'     $ < DDD Fig 4. DDD Pin configuration SO14 Fig 5. Pin configuration for (T)SSOP14 5.2 Pin description Table 2. Pin description Symbol Pin Description 1A, 2A, 3A 1, 3, 9 data input 1B, 2B, 3B 2, 4, 10 data input GND 7 ground (0 V) 1C, 2C, 3C 13, 5, 11 data input 1Y, 2Y, 3Y 12, 6, 8 data output VCC 14 supply voltage 74HC_HCT10 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 5 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 2 of 14 74HC10; 74HCT10 NXP Semiconductors Triple 3-input NAND gate 6. Functional description Table 3. Function selection[1] Input Output nA nB nC nY L X X H X L X H X X L H H H H L [1] H = HIGH voltage level; L = LOW voltage level; X = don’t care 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Max Unit VCC supply voltage 0.5 +7 V IIK input clamping current VI < 0.5 V or VI > VCC + 0.5 V [1] - 20 mA IOK output clamping current VO < 0.5 V or VO > VCC + 0.5 V [1] - 20 mA IO output current 0.5 V < VO < VCC + 0.5 V - 25 mA ICC supply current - 50 mA IGND ground current 50 - mA Tstg storage temperature 65 +150 C - 500 mW total power dissipation Ptot [2] SO14 and (T)SSOP14 [1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] For SO14 package: Ptot derates linearly with 8 mW/K above 70 C. For (T)SSOP14 packages: Ptot derates linearly with 5.5 mW/K above 60 C. 8. Recommended operating conditions Table 5. Recommended operating conditions Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions 74HC10 Min Typ 74HCT Max Min Typ Unit Max VCC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V VI input voltage 0 - VCC 0 - VCC V VO output voltage 0 - VCC 0 - VCC V Tamb ambient temperature 40 - +125 40 - +125 C t/V input transition rise and fall rate 74HC_HCT10 Product data sheet VCC = 2.0 V - - 625 - - - ns/V VCC = 4.5 V - 1.67 139 - 1.67 139 ns/V VCC = 6.0 V - - 83 - - - ns/V All information provided in this document is subject to legal disclaimers. Rev. 3 — 5 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 3 of 14 74HC10; 74HCT10 NXP Semiconductors Triple 3-input NAND gate 9. Static characteristics Table 6. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter 25 C Conditions 40 C to +85 C 40 C to +125 C Unit Min Typ Max Min Max Min Max VCC = 2.0 V 1.5 1.2 - 1.5 - 1.5 - V VCC = 4.5 V 3.15 2.4 - 3.15 - 3.15 - V VCC = 6.0 V 4.2 3.2 - 4.2 - 4.2 - V 74HC10 VIH VIL VOH VOL HIGH-level input voltage LOW-level input voltage HIGH-level output voltage LOW-level output voltage VCC = 2.0 V - 0.8 0.5 - 0.5 - 0.5 V VCC = 4.5 V - 2.1 1.35 - 1.35 - 1.35 V VCC = 6.0 V - 2.8 1.8 - 1.8 - 1.8 V VI = VIH or VIL IO = 20 A; VCC = 2.0 V 1.9 2.0 - 1.9 - 1.9 - V IO = 20 A; VCC = 4.5 V 4.4 4.5 - 4.4 - 4.4 - V IO = 20 A; VCC = 6.0 V 5.9 6.0 - 5.9 - 5.9 - V IO = 4.0 mA; VCC = 4.5 V 3.98 4.32 - 3.84 - 3.7 - V IO = 5.2 mA; VCC = 6.0 V 5.48 5.81 - 5.34 - 5.2 - V IO = 20 A; VCC = 2.0 V - 0 0.1 - 0.1 - 0.1 V IO = 20 A; VCC = 4.5 V - 0 0.1 - 0.1 - 0.1 V VI = VIH or VIL IO = 20 A; VCC = 6.0 V - 0 0.1 - 0.1 - 0.1 V IO = 4.0 mA; VCC = 4.5 V - 0.15 0.26 - 0.33 - 0.4 V IO = 5.2 mA; VCC = 6.0 V - 0.16 0.26 - 0.33 - 0.4 V II input leakage current VI = VCC or GND; VCC = 6.0 V - - 0.1 - 1 - 1 A ICC supply current VI = VCC or GND; IO = 0 A; VCC = 6.0 V - - 2.0 - 20 - 40 A CI input capacitance - 3.5 - - - - - pF 74HC_HCT10 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 5 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 4 of 14 74HC10; 74HCT10 NXP Semiconductors Triple 3-input NAND gate Table 6. Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter 25 C Conditions 40 C to +85 C 40 C to +125 C Unit Min Typ Max Min Max Min Max 74HCT10 VIH HIGH-level input voltage VCC = 4.5 V to 5.5 V 2.0 1.6 - 2.0 - 2.0 - V VIL LOW-level input voltage VCC = 4.5 V to 5.5 V - 1.2 0.8 - 0.8 - 0.8 V VOH HIGH-level output voltage VI = VIH or VIL; VCC = 4.5 V IO = 20 A 4.4 4.5 - 4.4 - 4.4 - V IO = 4.0 mA 3.98 4.32 - 3.84 - 3.7 - V VOL LOW-level output voltage VI = VIH or VIL; VCC = 4.5 V IO = 20 A; VCC = 4.5 V - 0 0.1 - 0.1 - 0.1 V IO = 4 A; VCC = 4.5 V - 0.15 0.26 - 0.33 - 0.4 V II input leakage current VI = VCC or GND; VCC = 5.5 V - - 0.1 - 1 - 1 A ICC supply current VI = VCC or GND; IO = 0 A; VCC = 5.5 V - - 2.0 - 20 - 40 A ICC additional supply current per input pin; VI = VCC  2.1 V; IO = 0 A; other inputs at VCC or GND; VCC = 4.5 V to 5.5 V - 150 540 - 675 - 735 A CI input capacitance - 3.5 - - - - - pF 10. Dynamic characteristics Table 7. Dynamic characteristics GND = 0 V; CL = 50 pF; for test circuit, see Figure 7. Symbol Parameter 25 C Conditions 40 C to +125 C Unit Min Typ Max Max (85 C) Max (125 C) VCC = 2.0 V - 30 95 120 145 ns VCC = 4.5 V - 11 19 24 29 ns VCC = 5.0 V; CL = 15 pF - 9 - - - ns - 9 16 20 25 ns VCC = 2.0 V - 19 75 95 110 ns VCC = 4.5 V - 7 15 19 22 ns - 6 13 16 19 ns - 12 - - - pF 74HC10 tpd propagation delay nA, nB to nY; see Figure 6 [1] VCC = 6.0 V tt transition time [2] see Figure 6 VCC = 6.0 V CPD power dissipation capacitance 74HC_HCT10 Product data sheet per package; VI = GND to VCC [3] All information provided in this document is subject to legal disclaimers. Rev. 3 — 5 August 2016 © NXP Semiconductors N.V. 2016. All rights reserved. 5 of 14 74HC10; 74HCT10 NXP Semiconductors Triple 3-input NAND gate Table 7. Dynamic characteristics …continued GND = 0 V; CL = 50 pF; for test circuit, see Figure 7. Symbol Parameter 25 C Conditions 40 C to +125 C Unit Min Typ Max Max (85 C) Max (125 C) - 14 24 30 36 ns - 11 - - - ns 74HCT10 [1] propagation delay nA, nB to nY; see Figure 6 tpd VCC = 4.5 V VCC = 5.0 V; CL = 15 pF tt transition time VCC = 4.5 V; see Figure 6 [2] CPD power dissipation capacitance per package; VI = GND to VCC  1.5 V [3] [1] - 7 15 19 22 ns - 14 - - - pF tpd is the same as tPHL and tPLH. [2] tt is the same as tTHL and tTLH. [3] CPD is used to determine the dynamic power dissipation (PD in W): PD = CPD  VCC2  fi  N +  (CL  VCC2  fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching;  (CL  VCC2  fo) = sum of outputs. 11. Waveforms 9O Q$Q%Q&LQSXW 90 *1' W3+/ 92+ W3/+ 9< 90 9; Q