74HC2G126DC

74HC2G126; 74HCT2G126 Dual buffer/line driver; 3-state Rev. 04 — 24 September 2009 Product data sheet 1. General description The 74HC2G126; 74HCT2G126 is a high-speed Si-gate CMOS device. The 74HC2G126; 74HCT2G126 provides two non-inverting buffer/line drivers with 3-state output. The 3-state output is controlled by the output enable input pin nOE. A LOW at pin nOE causes the output to assume a high-impedance OFF-state. The bus driver output currents are equal compared to the 74HC126 and 74HCT126. 2. Features I I I I I I Wide operating voltage from 2.0 V to 6.0 V Symmetrical output impedance High noise immunity Low power dissipation Balanced propagation delays ESD protection: N HBM JESD22-A114F exceeds 2000 V N MM JESD22-A115-A exceeds 200 V I Multiple package options I Specified from −40 °C to +85 °C and −40 °C to +125 °C 3. Ordering information Table 1. Ordering information Package Temperature range Name 74HC2G126DP 74HCT2G126DP 74HC2G126DC 74HCT2G126DC 74HC2G126GD 74HCT2G126GD −40 °C to +125 °C XSON8U −40 °C to +125 °C VSSOP8 −40 °C to +125 °C TSSOP8 Description plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0.5 mm Version SOT505-2 Type number plastic very thin shrink small outline package; 8 leads; SOT765-1 body width 2.3 mm plastic extremely thin small outline package; no leads; SOT996-2 8 terminals; UTLP based; body 3 × 2 × 0.5 mm NXP Semiconductors 74HC2G126; 74HCT2G126 Dual buffer/line driver; 3-state 4. Marking Table 2. Marking codes[1] Marking code H26 T26 H26 T26 H26 T26 Type number 74HC2G126DP 74HCT2G126DP 74HC2G126DC 74HCT2G126DC 74HC2G126GD 74HCT2G126GD [1] The pin 1 indicator is located on the lower left corner of the device, below the marking code. 5. Functional diagram 2 1 5 7 1A 1OE 2A 2OE 1Y 6 2Y 3 2 1 5 3 7 OE 1 EN1 A Y 6 mna946 mna947 mna127 Fig 1. Logic symbol Fig 2. IEC logic symbol Fig 3. Logic diagram (one driver) 6. Pinning information 6.1 Pinning 74HC2G126 74HCT2G126 74HC2G126 74HCT2G126 1OE 1A 2Y GND 1 2 3 4 001aad984 1OE 1A 8 7 6 5 VCC 2OE 1Y 2A GND 2Y 1 2 3 4 8 7 6 5 VCC 2OE 1Y 2A 001aak029 Transparent top view Fig 4. Pin configuration SOT505-2 (TSSOP8) and SOT765-1 (VSSOP8) Fig 5. Pin configuration SOT996-2 (XSON8U) 74HC_HCT2G126_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 24 September 2009 2 of 14 NXP Semiconductors 74HC2G126; 74HCT2G126 Dual buffer/line driver; 3-state 6.2 Pin description Table 3. Symbol 1OE, 2OE 1A, 2A 1Y, 2Y GND VCC Pin description Pin 1, 7 2, 5 6, 3 4 8 Description output enable input data input data output ground (0 V) supply voltage 7. Functional description Table 4. Input nOE H H L [1] Function table[1] Output nA L H X nY L H Z H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state. 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol VCC IIK IOK IO ICC IGND Tstg Ptot [1] [2] Parameter supply voltage input clamping current output clamping current output current supply current ground current storage temperature total power dissipation Conditions VI < −0.5 V or VI > VCC + 0.5 V VO < −0.5 V or VO > VCC + 0.5 V VO = −0.5 V to (VCC + 0.5 V) [1] [1] [1] Min −0.5 −70 −65 [2] Max +7.0 ±20 ±20 ±35 70 +150 300 Unit V mA mA mA mA mA °C mW - The input and output voltage ratings may be exceeded if the input and output current ratings are observed. For TSSOP8 package: above 55 °C the value of Ptot derates linearly with 2.5 mW/K. For VSSOP8 package: above 110 °C the value of Ptot derates linearly with 8 mW/K. For XSON8U package: above 118 °C the value of Ptot derates linearly with 7.8 mW/K. 74HC_HCT2G126_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 24 September 2009 3 of 14 NXP Semiconductors 74HC2G126; 74HCT2G126 Dual buffer/line driver; 3-state 9. Recommended operating conditions Table 6. Recommended operating conditions Voltages are referenced to GND (ground = 0 V). Symbol Parameter VCC VI VO Tamb ∆t/∆V supply voltage input voltage output voltage ambient temperature input transition rise and fall rate VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V Conditions Min 2.0 0 0 −40 74HC2G126 Typ 5.0 +25 1.67 Max 6.0 VCC VCC +125 625 139 83 Min 4.5 0 0 −40 74HCT2G126 Typ 5.0 +25 1.67 Max 5.5 VCC VCC +125 139 V V V °C ns/V ns/V ns/V Unit 10. Static characteristics Table 7. Static characteristics Voltages are referenced to GND (ground = 0 V). All typical values are measured at Tamb = 25 °C. Symbol Parameter Conditions Tamb = −40 °C to +85 °C Tamb = −40 °C to +125 °C Unit Min 74HC2G126 VIH HIGH-level input voltage VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V VIL LOW-level input voltage VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V VOH HIGH-level output voltage VI = VIH or VIL IO = −20 µA; VCC = 2.0 V IO = −20 µA; VCC = 4.5 V IO = −20 µA; VCC = 6.0 V IO = −6.0 mA; VCC = 4.5 V IO = −7.8 mA; VCC = 6.0 V VOL LOW-level output VI = VIH or VIL voltage IO = 20 µA; VCC = 2.0 V IO = 20 µA; VCC = 4.5 V IO = 20 µA; VCC = 6.0 V IO = 6.0 mA; VCC = 4.5 V IO = 7.8 mA; VCC = 6.0 V II IOZ input leakage current VI = VCC or GND; VCC = 6.0 V 1.9 4.4 5.9 3.84 5.34 2.0 4.5 6.0 4.32 5.81 0 0 0 0.15 0.16 0.1 0.1 0.1 0.33 0.33 ±1.0 ±5.0 1.9 4.4 5.9 3.7 5.2 0.1 0.1 0.1 0.4 0.4 ±1.0 ±10 V V V V V V V V V V µA µA 1.5 3.15 4.2 1.2 2.4 3.2 0.8 2.1 2.8 0.5 1.35 1.8 1.5 3.15 4.2 0.5 1.35 1.8 V V V V V V Typ Max Min Max OFF-state output VI = VIH or VIL; current VO = VCC or GND; VCC = 6.0 V 74HC_HCT2G126_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 24 September 2009 4 of 14 NXP Semiconductors 74HC2G126; 74HCT2G126 Dual buffer/line driver; 3-state Table 7. Static characteristics …continued Voltages are referenced to GND (ground = 0 V). All typical values are measured at Tamb = 25 °C. Symbol ICC CI CO Parameter supply current input capacitance output capacitance HIGH-level input voltage LOW-level input voltage HIGH-level output voltage VCC = 4.5 V to 5.5 V VCC = 4.5 V to 5.5 V VI = VIH or VIL; VCC = 4.5 V IO = −20 µA IO = −6.0 mA VOL LOW-level output VI = VIH or VIL; VCC = 4.5 V voltage IO = 20 µA IO = 6.0 mA II IOZ ICC ∆ICC CI CO input leakage current VI = VCC or GND; VCC = 5.5 V 4.4 3.84 4.5 4.32 0 0.16 1.0 1.5 0.1 0.33 ±1.0 ±5.0 10 375 4.4 3.7 0.1 0.4 ±1.0 ±10 20 410 µA µA pF pF V V V V µA Conditions VI = VCC or GND; IO = 0 A; VCC = 6.0 V Tamb = −40 °C to +85 °C Tamb = −40 °C to +125 °C Unit Min Typ 1.0 1.5 Max 10 Min Max 20 µA pF pF 74HCT2G126 VIH VIL VOH 2.0 1.6 1.2 0.8 2.0 0.8 V V OFF-state output VI = VIH or VIL; VO = current VCC or GND; VCC = 5.5 V supply current additional supply current input capacitance output capacitance VI = VCC or GND; IO = 0 A; VCC = 5.5 V per input; VCC = 4.5 V to 5.5 V; VI = VCC − 2.1 V; IO = 0 A 11. Dynamic characteristics Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); CL = 50 pF unless otherwise specified; for test circuit see Figure 8. Symbol Parameter 74HC2G126 tpd propagation delay nA to nY; see Figure 6 VCC = 2.0 V VCC = 4.5 V VCC = 5.0 V; CL = 15 pF VCC = 6.0 V [2] Conditions Tamb = −40 °C to +85 °C Tamb = −40 °C to +125 °C Unit Min Typ[1] Max Min Max - 35 11 10 8 115 23 20 - 135 27 23 ns ns ns ns 74HC_HCT2G126_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 24 September 2009 5 of 14 NXP Semiconductors 74HC2G126; 74HCT2G126 Dual buffer/line driver; 3-state Table 8. Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V); CL = 50 pF unless otherwise specified; for test circuit see Figure 8. Symbol Parameter ten enable time Conditions nOE to nY; see Figure 7 VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V tdis disable time nOE to nY; see Figure 7 VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V tt transition time nY; see Figure 6 VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V CPD power dissipation capacitance per buffer; VI = GND to VCC output enabled output disabled nA to nY; see Figure 6 VCC = 4.5 V VCC = 5.0 V; CL = 15 pF ten tdis tt CPD enable time disable time transition time power dissipation capacitance nOE to nY; see Figure 7; VCC = 4.5 V nOE to nY; see Figure 7; VCC = 4.5 V nY; see Figure 6; VCC = 4.5 V per buffer; VI = GND to VCC − 1.5 V output enabled output disabled [1] [2] All typical values are measured at Tamb = 25 °C. tpd is the same as tPLH and tPHL. ten is the same as tPZL and tPZH. tdis is the same as tPLZ and tPHZ. tt is the same as tTHL and tTLH. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; Σ(CL × VCC2 × fo) = sum of outputs. © NXP B.V. 2009. All rights reserved. Tamb = −40 °C to +85 °C Tamb = −40 °C to +125 °C Unit Min [2] Typ[1] 40 11 8 25 12 10 18 6 5 11 1 Max 115 23 20 125 25 21 75 15 13 - Min - Max 135 27 23 150 30 26 90 18 15 ns ns ns ns ns ns ns ns ns pF pF [2] [2] [3] [2] 74HCT2G126 tpd propagation delay [2] 15 12 11 11 6 30 31 35 15 - 36 38 42 18 ns ns ns ns ns - [2] [2] [3] - 11 1 - - - pF pF [3] 74HC_HCT2G126_4 Product data sheet Rev. 04 — 24 September 2009 6 of 14 NXP Semiconductors 74HC2G126; 74HCT2G126 Dual buffer/line driver; 3-state 12. Waveforms VI nA input GND tPHL VOH nY output VOL 10% tTHL tTLH mna948 VM tPLH VI 90% VM Measurement points are given in Table 9. VOL and VOH are typical voltage output levels that occur with the output load. Fig 6. Propagation delay input (nA) to output (nY) and transition time output (nY) VI nOE input GND t PLZ VCC output LOW-to-OFF OFF-to-LOW VOL t PHZ VOH output HIGH-to-OFF OFF-to-HIGH GND outputs enabled outputs disabled outputs enabled mna949 VM t PZL VM VX t PZH VY VM Measurement points are given in Table 9. VOL and VOH are typical voltage output levels that occur with the output load. Fig 7. Table 9. Type Enable and disable times Measurement points Input VM 0.5VCC 1.3 V Output VM 0.5VCC 1.3 V VX VOL + 0.3 V VOL + 0.3 V VY VOH − 0.3 V VOH − 0.3 V 74HC2G126 74HCT2G126 74HC_HCT2G126_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 24 September 2009 7 of 14 NXP Semiconductors 74HC2G126; 74HCT2G126 Dual buffer/line driver; 3-state VI negative pulse 0V tW 90 % VM 10 % tf tr tr tf 90 % VM 10 % tW VM VM VI positive pulse 0V VCC VCC G VI VO RL S1 DUT RT CL open 001aad983 Test data is given in Table 10. Definitions test circuit: RT = Termination resistance should be equal to output impedance Zo of the pulse generator. CL = Load capacitance including jig and probe capacitance. RL = Load resistance. S1 = Test selection switch. Fig 8. Table 10. Type Test circuit for measuring switching times Test data Input VI tr, tf ≤ 6 ns ≤ 6 ns GND to VCC GND to 3 V Load CL 15 pF, 50 pF 15 pF, 50 pF RL 1 kΩ 1 kΩ S1 position tPHL, tPLH open open tPZH, tPHZ GND GND tPZL, tPLZ VCC VCC 74HC2G126 74HCT2G126 74HC_HCT2G126_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 24 September 2009 8 of 14 NXP Semiconductors 74HC2G126; 74HCT2G126 Dual buffer/line driver; 3-state 13. Package outline TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0.5 mm SOT505-2 D E A X c y HE vMA Z 8 5 A pin 1 index A2 A1 (A3) Lp L θ 1 e bp 4 wM detail X 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1.1 A1 0.15 0.00 A2 0.95 0.75 A3 0.25 bp 0.38 0.22 c 0.18 0.08 D(1) 3.1 2.9 E(1) 3.1 2.9 e 0.65 HE 4.1 3.9 L 0.5 Lp 0.47 0.33 v 0.2 w 0.13 y 0.1 Z(1) 0.70 0.35 θ 8° 0° Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT505-2 REFERENCES IEC JEDEC --JEITA EUROPEAN PROJECTION ISSUE DATE 02-01-16 Fig 9. Package outline SOT505-2 (TSSOP8) © NXP B.V. 2009. All rights reserved. 74HC_HCT2G126_4 Product data sheet Rev. 04 — 24 September 2009 9 of 14 NXP Semiconductors 74HC2G126; 74HCT2G126 Dual buffer/line driver; 3-state VSSOP8: plastic very thin shrink small outline package; 8 leads; body width 2.3 mm SOT765-1 D E A X c y HE vMA Z 8 5 Q A pin 1 index A2 A1 (A3) θ Lp L 1 e bp 4 wM detail X 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1 A1 0.15 0.00 A2 0.85 0.60 A3 0.12 bp 0.27 0.17 c 0.23 0.08 D(1) 2.1 1.9 E(2) 2.4 2.2 e 0.5 HE 3.2 3.0 L 0.4 Lp 0.40 0.15 Q 0.21 0.19 v 0.2 w 0.13 y 0.1 Z(1) 0.4 0.1 θ 8° 0° Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT765-1 REFERENCES IEC JEDEC MO-187 JEITA EUROPEAN PROJECTION ISSUE DATE 02-06-07 Fig 10. Package outline SOT765-1 (VSSOP8) 74HC_HCT2G126_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 24 September 2009 10 of 14 NXP Semiconductors 74HC2G126; 74HCT2G126 Dual buffer/line driver; 3-state XSON8U: plastic extremely thin small outline package; no leads; 8 terminals; UTLP based; body 3 x 2 x 0.5 mm SOT996-2 D B A E A A1 detail X terminal 1 index area e1 L1 1 e b 4 v w M M CAB C C y1 C y L2 L 8 5 X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A max 0.5 A1 0.05 0.00 b 0.35 0.15 D 2.1 1.9 E 3.1 2.9 e 0.5 e1 1.5 L 0.5 0.3 L1 0.15 0.05 L2 0.6 0.4 v 0.1 w 0.05 y 0.05 y1 0.1 OUTLINE VERSION SOT996-2 REFERENCES IEC --JEDEC JEITA --- EUROPEAN PROJECTION ISSUE DATE 07-12-18 07-12-21 Fig 11. Package outline SOT996-2 (XSON8U) 74HC_HCT2G126_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 24 September 2009 11 of 14 NXP Semiconductors 74HC2G126; 74HCT2G126 Dual buffer/line driver; 3-state 14. Abbreviations Table 11. Acronym CMOS DUT ESD HBM MM Abbreviations Description Complementary Metal Oxide Semiconductor Device Under Test ElectroStatic Discharge Human Body Model Machine Model 15. Revision history Table 12. Revision history Release date 20090924 Data sheet status Product data sheet Product data sheet Change notice Supersedes 74HC_HCT2G126_3 74HC_HCT2G126_2 Document ID 74HC_HCT2G126_4 Modifications: 74HC_HCT2G126_3 Modifications: • • • • • • Table 2: Marking codes table added. The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Quick reference data removed Added type numbers 74HC2G126GD and 74HCT2G126GD (XSON8U package) Section 8: derating factor for TSSOP8, VSSOP8 and XSON8U package added Product data sheet Product data sheet 74HC_HCT2G126_1 - 20090507 74HC_HCT2G126_2 74HC_HCT2G126_1 20051215 20030303 74HC_HCT2G126_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 24 September 2009 12 of 14 NXP Semiconductors 74HC2G126; 74HCT2G126 Dual buffer/line driver; 3-state 16. Legal information 16.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 16.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 16.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental 16.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 17. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com 74HC_HCT2G126_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 24 September 2009 13 of 14 NXP Semiconductors 74HC2G126; 74HCT2G126 Dual buffer/line driver; 3-state 18. Contents 1 2 3 4 5 6 6.1 6.2 7 8 9 10 11 12 13 14 15 16 16.1 16.2 16.3 16.4 17 18 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 1 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Recommended operating conditions. . . . . . . . 4 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4 Dynamic characteristics . . . . . . . . . . . . . . . . . . 5 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 24 September 2009 Document identifier: 74HC_HCT2G126_4