74HC3G07DC,125

74HC3G07; 74HCT3G07 Triple buffer with open-drain outputs Rev. 02 — 12 May 2009 Product data sheet 1. General description The 74HC3G07 and 74HCT3G07 are high-speed Si-gate CMOS devices. They provide three buffers with open-drain outputs. The outputs of the 74HC3G07 and 74HCT3G07 devices are open drains and can be connected to other open-drain outputs to implement active-LOW wired-OR or active-HIGH wired-AND functions. For digital operation this device must have a pull-up resistor to establish a logic HIGH-level. The HC device has CMOS input switching levels and supply voltage range 2 V to 6 V. The HCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V. 2. Features n n n n n Wide supply voltage range from 2.0 V to 6.0 V High noise immunity Low power dissipation Multiple package options ESD protection: u HBM JESD22-A114E exceeds 2000 V u MM JESD22-A115-A exceeds 200 V n Specified from −40 °C to +85 °C and −40 °C to +125 °C 3. Ordering information Table 1. Ordering information Type number 74HC3G07DP Package Temperature range Name Description Version −40 °C to +125 °C TSSOP8 plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0.5 mm SOT505-2 −40 °C to +125 °C VSSOP8 plastic very thin shrink small outline package; 8 leads; SOT765-1 body width 2.3 mm −40 °C to +125 °C XSON8U plastic extremely thin small outline package; no leads; SOT996-2 8 terminals; UTLP based; body 3 × 2 × 0.5 mm 74HCT3G07DP 74HC3G07DC 74HCT3G07DC 74HC3G07GD 74HCT3G07GD 74HC3G07; 74HCT3G07 NXP Semiconductors Triple buffer with open-drain outputs 4. Marking Table 2. Marking code Type number Marking code 74HC3G07DP H07 74HCT3G07DP T07 74HC3G07DC H07 74HCT3G07DC T07 74HC3G07GD H07 74HCT3G07GD T07 5. Functional diagram 1 1A 1Y 2A 2Y 3A 3Y 1Y 1A 1 2Y 2A Y 1 3Y 3A 001aah762 Fig 1. A GND 001aah763 Logic symbol Fig 2. IEC logic symbol Fig 3. mna591 Logic diagram (one buffer) 6. Pinning information 6.1 Pinning 74HC3G07 74HCT3G07 74HC3G07 74HCT3G07 1A 1 8 VCC 3Y 2 7 1Y 2A 3 6 3A GND 4 5 2Y 8 VCC 3Y 2 7 1Y 2A 3 6 3A GND 4 5 2Y 001aak033 Pin configuration SOT505-2 (TSSOP8) and SOT765-1 (VSSOP8) Fig 5. Pin configuration SOT996-2 (XSON8U) 74HC_HCT3G07_2 Product data sheet 1 Transparent top view 001aak032 Fig 4. 1A © NXP B.V. 2009. All rights reserved. Rev. 02 — 12 May 2009 2 of 13 74HC3G07; 74HCT3G07 NXP Semiconductors Triple buffer with open-drain outputs 6.2 Pin description Table 3. Pin description Symbol Pin Description 1A, 2A, 3A 1, 3, 6 data input GND 4 ground (0 V) 1Y, 2Y, 3Y 7, 5, 2 data output VCC 8 supply voltage 7. Functional description Table 4. Function table[1] Input nA Output nY L L H Z [1] H = HIGH voltage level; L = LOW voltage level; Z = high-impedance OFF-state. 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter VCC supply voltage Min Max Unit −0.5 7.0 V IIK input clamping current VI < −0.5 V or VI > VCC + 0.5 V [1] - ±20 mA VO < −0.5 V [1] output clamping current −20 - mA active mode [1] −0.5 high-impedance mode [1] −0.5 7.0 V VO = −0.5 V to 7.0 V [1] −25 - mA supply current [1] - 50 mA IGND ground current [1] Tstg storage temperature IOK output voltage VO output current IO ICC dynamic power dissipation PD Conditions Tamb = −40 °C to +125 °C [2] −50 - mA +150 °C - 300 mW The input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] For TSSOP8 package: above 55 °C the value of Ptot derates linearly with 2.5 mW/K. For VSSOP8 package: above 110 °C the value of Ptot derates linearly with 8 mW/K. For XSON8U package: above 118 °C the value of Ptot derates linearly with 7.8 mW/K. Product data sheet V −65 [1] 74HC_HCT3G07_2 VCC + 0.5 © NXP B.V. 2009. All rights reserved. Rev. 02 — 12 May 2009 3 of 13 74HC3G07; 74HCT3G07 NXP Semiconductors Triple buffer with open-drain outputs 9. Recommended operating conditions Table 6. Recommended operating conditions Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions 74HC3G07 Min Typ 74HCT3G07 Max Min Typ Unit Max VCC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V VI input voltage 0 - 6.0 0 - 5.5 V VO output voltage 0 - VCC 0 - VCC V Tamb ambient temperature −40 +25 +125 −40 +25 +125 °C ∆t/∆V input transition rise and fall rate VCC = 2.0 V - - 625 - - - ns/V VCC = 4.5 V - 1.67 139 - 1.67 139 ns/V VCC = 6.0 V - - 83 - - - ns/V 10. Static characteristics Table 7. Static characteristics Voltages are referenced to GND (ground = 0 V). All typical values are measured at Tamb = 25 °C. Symbol Parameter −40 °C to +85 °C Conditions −40 °C to +125 °C Min Typ[1] Max Min Max Unit 74HC3G07 VIH VIL VOL HIGH-level input voltage VCC = 2.0 V 1.5 1.2 - 1.5 - V VCC = 4.5 V 3.15 2.4 - 3.15 - V VCC = 6.0 V 4.2 3.2 - 4.2 - V LOW-level input voltage VCC = 2.0 V - 0.8 0.5 - 0.5 V VCC = 4.5 V - 2.1 1.35 - 1.35 V VCC = 6.0 V - 2.8 1.8 - 1.8 V IO = 20 µA; VCC = 2.0 V - 0 0.1 - 0.1 V IO = 20 µA; VCC = 4.5 V - 0 0.1 - 0.1 V IO = 20 µA; VCC = 6.0 V - 0 0.1 - 0.1 V IO = 4.0 mA; VCC = 4.5 V - 0.15 0.33 - 0.4 V IO = 5.2 mA; VCC = 6.0 V - 0.16 0.33 - 0.4 V LOW-level output voltage VI = VIH or VIL II input leakage current VI = VCC or GND; VCC = 6.0 V - - ±0.1 - ±1.0 µA ILO output leakage current VI = VIH; VO = VCC or GND - - ±5.0 - ±10 µA ICC supply current per input pin; VCC = 6.0 V; VI = VCC or GND; IO = 0 A; - - 10 - 20 µA CI input capacitance - 1.5 - - - pF 74HC_HCT3G07_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 12 May 2009 4 of 13 74HC3G07; 74HCT3G07 NXP Semiconductors Triple buffer with open-drain outputs Table 7. Static characteristics …continued Voltages are referenced to GND (ground = 0 V). All typical values are measured at Tamb = 25 °C. Symbol Parameter −40 °C to +85 °C Conditions −40 °C to +125 °C Min Typ[1] Max Min Max Unit 74HCT3G07 VIH HIGH-level input voltage VCC = 4.5 V to 5.5 V 2.0 1.6 - 2.0 - V VIL LOW-level input voltage VCC = 4.5 V to 5.5 V - 1.2 0.8 - 0.8 V VOL LOW-level output voltage VI = VIH or VIL IO = 20 µA; VCC = 4.5 V - 0 0.1 - 0.1 V IO = 4.0 mA; VCC = 4.5 V - 0.15 0.33 - 0.4 V II input leakage current VI = VCC or GND; VCC = 5.5 V - - ±1.0 - ±1.0 µA ILO output leakage current VI = VIH; VO = VCC or GND - - ±5.0 - ±10 µA ICC supply current per input pin; VCC = 5.5 V; VI = VCC or GND; IO = 0 A; - - 10 - 20 µA ∆ICC additional supply current per input; VCC = 4.5 V to 5.5 V; VI = VCC − 2.1 V; IO = 0 A - - 375 - 410 µA CI input capacitance - 1.5 - - - pF [1] Typical values are measured at Tamb = 25 °C. 11. Dynamic characteristics Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); all typical values are measured at Tamb = 25 °C; for test circuit see Figure 7. Symbol Parameter −40 °C to +85 °C Conditions −40 °C to +125 °C Unit Min Typ Max Min Max VCC = 2.0 V - 25 95 - 125 ns VCC = 4.5 V - 9 19 - 25 ns VCC = 6.0 V - 7 16 - 20 ns VCC = 2.0 V - 25 95 - 125 ns VCC = 4.5 V - 11 23 - 30 ns VCC = 6.0 V - 10 23 - 26 ns - 18 95 - 125 ns - 6 19 - 25 ns - 5 16 - 20 ns - 4 - - - pF 74HC3G07 tPZL tPLZ tTHL OFF-state to LOW propagation delay LOW to OFF-state propagation delay nA to nY; see Figure 6 nA to nY; see Figure 6 HIGH to LOW output nY; see Figure 6 transition time VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V CPD power dissipation capacitance VI = GND to VCC [1] 74HC_HCT3G07_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 12 May 2009 5 of 13 74HC3G07; 74HCT3G07 NXP Semiconductors Triple buffer with open-drain outputs Table 8. Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V); all typical values are measured at Tamb = 25 °C; for test circuit see Figure 7. Symbol Parameter −40 °C to +85 °C Conditions −40 °C to +125 °C Unit Min Typ Max Min Max - 11 27 - 32 ns - 10 26 - 31 ns - 6 19 - 22 ns - 4 - - pF 74HCT3G07 tPZL tPLZ OFF-state to LOW propagation delay nA to nY; see Figure 6 LOW to OFF-state propagation delay nA to nY; see Figure 6 VCC = 4.5 V VCC = 4.5 V tTHL HIGH to LOW output VCC = 4.5 V; see Figure 6 transition time CPD power dissipation capacitance [1] VI = GND to VCC − 1.5 V [1] CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; Σ(CL × VCC2 × fo) = sum of outputs. 12. Waveforms VI VM nA input GND tPLZ tPZL VCC VM nY output VOL VX tTHL 001aak034 Measurement points are given in Table 9. VOL is the typical output voltage level that occurs with the output load. Fig 6. The input (nA) to output (nY) propagation delays Table 9. Measurement points Type Input Output VM VM VX 74HC3G07 0.5 × VCC 0.5 × VCC 0.1 × VCC 74HCT3G07 1.3 V 1.3 V 0.1 × VCC 74HC_HCT3G07_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 12 May 2009 6 of 13 74HC3G07; 74HCT3G07 NXP Semiconductors Triple buffer with open-drain outputs VI tW 90 % negative pulse VM 0V VI tf tr tr tf 90 % positive pulse 0V VM 10 % VM VM 10 % tW VCC VCC G VI VO RL S1 open DUT RT CL 001aad983 Test data is given in Table 10. Definitions for test circuit: RT = Termination resistance should be equal to output impedance Zo of the pulse generator. CL = Load capacitance including jig and probe capacitance. RL = Load resistance. S1 = Test selection switch. Fig 7. Test circuit for measuring switching times Table 10. Test data Type Input Load VI tr, tf CL RL tPZL, tPLZ 74HC3G07 GND to VCC ≤ 6 ns 50 pF 1 kΩ VCC 74HCT3G07 GND to 3 V ≤ 6 ns 50 pF 1 kΩ VCC 74HC_HCT3G07_2 Product data sheet S1 position © NXP B.V. 2009. All rights reserved. Rev. 02 — 12 May 2009 7 of 13 74HC3G07; 74HCT3G07 NXP Semiconductors Triple buffer with open-drain outputs 13. Package outline TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0.5 mm D E A SOT505-2 X c HE y v M A Z 5 8 A A2 (A3) A1 pin 1 index θ Lp L 1 4 e detail X w M bp 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D(1) E(1) e HE L Lp v w y Z(1) θ mm 1.1 0.15 0.00 0.95 0.75 0.25 0.38 0.22 0.18 0.08 3.1 2.9 3.1 2.9 0.65 4.1 3.9 0.5 0.47 0.33 0.2 0.13 0.1 0.70 0.35 8° 0° Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT505-2 Fig 8. REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 02-01-16 --- Package outline SOT505-2 (TSSOP8) 74HC_HCT3G07_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 12 May 2009 8 of 13 74HC3G07; 74HCT3G07 NXP Semiconductors Triple buffer with open-drain outputs VSSOP8: plastic very thin shrink small outline package; 8 leads; body width 2.3 mm D E SOT765-1 A X c y HE v M A Z 5 8 Q A A2 A1 pin 1 index (A3) θ Lp 1 4 e L detail X w M bp 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D(1) E(2) e HE L Lp Q v w y Z(1) θ mm 1 0.15 0.00 0.85 0.60 0.12 0.27 0.17 0.23 0.08 2.1 1.9 2.4 2.2 0.5 3.2 3.0 0.4 0.40 0.15 0.21 0.19 0.2 0.13 0.1 0.4 0.1 8° 0° Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT765-1 Fig 9. REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 02-06-07 MO-187 Package outline SOT765-1 (VSSOP8) 74HC_HCT3G07_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 12 May 2009 9 of 13 74HC3G07; 74HCT3G07 NXP Semiconductors Triple buffer with open-drain outputs XSON8U: plastic extremely thin small outline package; no leads; 8 terminals; UTLP based; body 3 x 2 x 0.5 mm B D SOT996-2 A A E A1 detail X terminal 1 index area e1 v w b e L1 1 4 8 5 C C A B C M M y y1 C L2 L X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max A1 b D E e e1 L L1 L2 v w y y1 mm 0.5 0.05 0.00 0.35 0.15 2.1 1.9 3.1 2.9 0.5 1.5 0.5 0.3 0.15 0.05 0.6 0.4 0.1 0.05 0.05 0.1 REFERENCES OUTLINE VERSION IEC SOT996-2 --- JEDEC JEITA --- EUROPEAN PROJECTION ISSUE DATE 07-12-18 07-12-21 Fig 10. Package outline SOT996-2 (XSON8U) 74HC_HCT3G07_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 12 May 2009 10 of 13 74HC3G07; 74HCT3G07 NXP Semiconductors Triple buffer with open-drain outputs 14. Abbreviations Table 11. Abbreviations Acronym Description CMOS Complementary Metal Oxide Semiconductor DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model TTL Transistor-Transistor Logic 15. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes 74HC_HCT3G07_2 20090512 Product data sheet - 74HC_HCT3G07_1 Modifications: 74HC_HCT3G07_1 • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • Legal texts have been adapted to the new company name where appropriate. Added type number 74HC3G07GD and 74HCT3G07GD (XSON8U package) 20031015 Product specification 74HC_HCT3G07_2 Product data sheet - - © NXP B.V. 2009. All rights reserved. Rev. 02 — 12 May 2009 11 of 13 74HC3G07; 74HCT3G07 NXP Semiconductors Triple buffer with open-drain outputs 16. Legal information 16.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 16.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 16.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 16.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 17. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com 74HC_HCT3G07_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 12 May 2009 12 of 13 NXP Semiconductors 74HC3G07; 74HCT3G07 Triple buffer with open-drain outputs 18. Contents 1 2 3 4 5 6 6.1 6.2 7 8 9 10 11 12 13 14 15 16 16.1 16.2 16.3 16.4 17 18 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 1 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Recommended operating conditions. . . . . . . . 4 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4 Dynamic characteristics . . . . . . . . . . . . . . . . . . 5 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 12 May 2009 Document identifier: 74HC_HCT3G07_2