74HCT08N,652

74HC08; 74HCT08 Quad 2-input AND gate Rev. 4 — 6 September 2012 Product data sheet 1. General description The 74HC08; 74HCT08 is a quad 2-input AND gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC. 2. Features and benefits  Complies with JEDEC standard JESD7A  Complies with JEDEC standard JESD8-1A  Input levels:  For 74HC08: CMOS level  For 74HCT08: TTL level  ESD protection:  HBM JESD22-A114F exceeds 2000 V  MM JESD22-A115-A exceeds 200 V  Multiple package options  Specified from 40 C to +85 C and from 40 C to +125 C 3. Ordering information Table 1. Ordering information Type number 74HC08N Package Temperature range Name Description Version 40 C to +125 C DIP14 plastic dual in-line package; 14 leads (300 mil) SOT27-1 40 C to +125 C SO14 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 40 C to +125 C SSOP14 plastic shrink small outline package; 14 leads; body width 5.3 mm SOT337-1 40 C to +125 C TSSOP14 plastic thin shrink small outline package; 14 leads; body width 4.4 mm SOT402-1 40 C to +125 C DHVQFN14 plastic dual in-line compatible thermal enhanced very SOT762-1 thin quad flat package; no leads; 14 terminals; body 2.5  3  0.85 mm 74HCT08N 74HC08D 74HCT08D 74HC08DB 74HCT08DB 74HC08PW 74HCT08PW 74HC08BQ 74HCT08BQ 74HC08; 74HCT08 NXP Semiconductors Quad 2-input AND gate 4. Functional diagram 1 & 3 & 6 & 8 2 4 1 1A 2 1B 4 2A 5 2B 9 3A 10 3B 12 4A 13 4B 1Y 3 5 2Y 6 9 10 3Y 8 4Y 11 A 12 & Y 11 13 B mna222 Fig 1. mna221 mna223 Logic symbol Fig 2. IEC logic symbol Fig 3. Logic diagram (one gate) 5. Pinning information 5.1 Pinning $ WHUPLQDO LQGH[DUHD  9&& +& +&7 +& +&7   9&& %   % %   % <   $ <   $ $   < %  <   $   % <   $ *1'   < *1'  %   % <  <   *1' $ $ DDD 7UDQVSDUHQWWRSYLHZ DDD (1) The die substrate is attached to this pad using conductive die attach material. It cannot be used as a supply pin or input. Fig 4. Pin configuration DIP14, SO14 and (T)SSOP14 74HC_HCT08 Product data sheet Fig 5. Pin configuration DHVQFN14 All information provided in this document is subject to legal disclaimers. Rev. 4 — 6 September 2012 © NXP B.V. 2012. All rights reserved. 2 of 16 74HC08; 74HCT08 NXP Semiconductors Quad 2-input AND gate 5.2 Pin description Table 2. Pin description Symbol Pin Description 1A to 4A 1, 4, 9, 12 data input 1B to 4B 2, 5, 10,13 data input 1Y to 4Y 3, 6, 8, 11 data output GND 7 ground (0 V) VCC 14 supply voltage 6. Functional description Table 3. Function table[1] Input Output nA nB L L L L H L H L L H H H [1] nY H = HIGH voltage level; L = LOW voltage level; X = don’t care. 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter VCC supply voltage IIK input clamping current VI < 0.5 V or VI > VCC + 0.5 V IOK output clamping current VO < 0.5 V or VO > VCC + 0.5 V IO output current 0.5 V < VO < VCC + 0.5 V - 25 mA ICC supply current - 50 mA IGND ground current 50 - mA Tstg storage temperature 65 +150 C DIP14 package - 750 mW SO14, (T)SSOP14 and DHVQFN14 packages - 500 mW [2] Min Max Unit 0.5 +7 V [1] - 20 mA [1] - 20 mA [2] total power dissipation Ptot [1] Conditions The input and output voltage ratings may be exceeded if the input and output current ratings are observed. For DIP14 package: Ptot derates linearly with 12 mW/K above 70 C. For SO14 package: Ptot derates linearly with 8 mW/K above 70 C. For (T)SSOP14 packages: Ptot derates linearly with 5.5 mW/K above 60 C. For DHVQFN14 packages: Ptot derates linearly with 4.5 mW/K above 60 C. 74HC_HCT08 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 6 September 2012 © NXP B.V. 2012. All rights reserved. 3 of 16 74HC08; 74HCT08 NXP Semiconductors Quad 2-input AND gate 8. Recommended operating conditions Table 5. Recommended operating conditions Voltages are referenced to GND (ground = 0 V) Symbol Parameter Conditions 74HC08 Min 74HCT08 Typ Max Min Unit Typ Max VCC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V VI input voltage 0 - VCC 0 - VCC V VO output voltage 0 - VCC 0 - VCC V Tamb ambient temperature 40 - +125 40 - +125 C t/V input transition rise and fall rate VCC = 2.0 V - - 625 - - - ns/V VCC = 4.5 V - 1.67 139 - 1.67 139 ns/V VCC = 6.0 V - - 83 - - - ns/V 9. Static characteristics Table 6. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter 25 C Conditions Min Typ VCC = 2.0 V 1.5 VCC = 4.5 V 40 C to +85 C 40 C to +125 C Unit Max Min Max Min Max 1.2 - 1.5 - 1.5 - V 3.15 2.4 - 3.15 - 3.15 - V VCC = 6.0 V 4.2 3.2 - 4.2 - 4.2 - V VCC = 2.0 V - 0.8 0.5 - 0.5 - 0.5 V VCC = 4.5 V - 2.1 1.35 - 1.35 - 1.35 V VCC = 6.0 V - 2.8 1.8 - 1.8 - 1.8 V IO = 20 A; VCC = 2.0 V 1.9 2.0 - 1.9 - 1.9 - V IO = 20 A; VCC = 4.5 V 4.4 4.5 - 4.4 - 4.4 - V IO = 20 A; VCC = 6.0 V 5.9 6.0 - 5.9 - 5.9 - V IO = 4.0 mA; VCC = 4.5 V 3.98 4.32 - 3.84 - 3.7 - V IO = 5.2 mA; VCC = 6.0 V 5.48 5.81 - 5.34 - 5.2 - V IO = 20 A; VCC = 2.0 V - 0 0.1 - 0.1 - 0.1 V IO = 20 A; VCC = 4.5 V - 0 0.1 - 0.1 - 0.1 V IO = 20 A; VCC = 6.0 V - 0 0.1 - 0.1 - 0.1 V IO = 4.0 mA; VCC = 4.5 V - 0.15 0.26 - 0.33 - 0.4 V IO = 5.2 mA; VCC = 6.0 V - 0.16 0.26 - 0.33 - 0.4 V 74HC08 VIH VIL VOH VOL HIGH-level input voltage LOW-level input voltage HIGH-level output voltage LOW-level output voltage VI = VIH or VIL VI = VIH or VIL II input leakage current VI = VCC or GND; VCC = 6.0 V - - 0.1 - 1 - 1 A ICC supply current VI = VCC or GND; IO = 0 A; VCC = 6.0 V - - 2.0 - 20 - 40 A 74HC_HCT08 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 6 September 2012 © NXP B.V. 2012. All rights reserved. 4 of 16 74HC08; 74HCT08 NXP Semiconductors Quad 2-input AND gate Table 6. Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter 25 C Conditions Min CI input capacitance Typ 40 C to +85 C 40 C to +125 C Unit Max Min Max Min Max - 3.5 - - - - - pF 74HCT08 VIH HIGH-level input voltage VCC = 4.5 V to 5.5 V 2.0 1.6 - 2.0 - 2.0 - V VIL LOW-level input voltage VCC = 4.5 V to 5.5 V - 1.2 0.8 - 0.8 - 0.8 V VOH HIGH-level output voltage VI = VIH or VIL; VCC = 4.5 V IO = 20 A 4.4 4.5 - 4.4 - 4.4 - V IO = 4.0 mA 3.98 4.32 - 3.84 - 3.7 - V LOW-level output voltage VI = VIH or VIL; VCC = 4.5 V IO = 20 A - 0 0.1 - 0.1 - 0.1 V IO = 5.2 mA - 0.15 0.26 - 0.33 - 0.4 V VOL II input leakage current VI = VCC or GND; VCC = 5.5 V - - 0.1 - 1 - 1 A ICC supply current VI = VCC or GND; IO = 0 A; VCC = 5.5 V - - 2.0 - 20 - 40 A ICC additional supply current per input pin; VI = VCC  2.1 V; IO = 0 A; other inputs at VCC or GND; VCC = 4.5 V to 5.5 V - 60 216 - 270 - 294 A CI input capacitance - 3.5 - - - - - pF 10. Dynamic characteristics Table 7. Dynamic characteristics GND = 0 V; CL = 50 pF; for load circuit see Figure 7. Symbol Parameter 25 C Conditions 40 C to +125 C Unit Min Typ Max Max (85 C) Max (125 C) - 25 90 115 135 74HC08 tpd propagation delay nA, nB to nY; see Figure 6 [1] VCC = 2.0 V VCC = 4.5 V - 9 18 23 27 ns VCC = 5.0 V; CL = 15 pF - 7 - - - ns - 7 15 20 23 ns VCC = 6.0 V tt transition time 74HC_HCT08 Product data sheet ns see Figure 6 [2] VCC = 2.0 V - 19 75 95 110 ns VCC = 4.5 V - 7 15 19 22 ns VCC = 6.0 V - 6 13 16 19 ns All information provided in this document is subject to legal disclaimers. Rev. 4 — 6 September 2012 © NXP B.V. 2012. All rights reserved. 5 of 16 74HC08; 74HCT08 NXP Semiconductors Quad 2-input AND gate Table 7. Dynamic characteristics GND = 0 V; CL = 50 pF; for load circuit see Figure 7. Symbol Parameter CPD 25 C Conditions power dissipation capacitance 40 C to +125 C Unit Min Typ Max Max (85 C) Max (125 C) - 10 - - - VCC = 4.5 V - 14 24 30 36 ns VCC = 5.0 V; CL = 15 pF - 11 - - - ns [3] per package; VI = GND to VCC pF 74HCT02 [1] propagation delay nA, nB to nY; see Figure 6 tpd transition time tt power dissipation capacitance CPD VCC = 4.5 V; see Figure 6 [2] - 7 15 19 22 ns per package; VI = GND to VCC  1.5 V [3] - 20 - - - pF [1] tpd is the same as tPHL and tPLH. [2] tt is the same as tTHL and tTLH. [3] CPD is used to determine the dynamic power dissipation (PD in W): PD = CPD  VCC2  fi  N +  (CL  VCC2  fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching;  (CL  VCC2  fo) = sum of outputs. 11. Waveforms 9, Q$Q%LQSXW 90 *1' W3+/ 92+ 9< Q