74LVC1G10GM,115

74LVC1G10 Single 3-input NAND gate Rev. 3 — 8 December 2011 Product data sheet 1. General description The 74LVC1G10 provides a low-power, low-voltage single 3-input NAND gate. The inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device in a mixed 3.3 V and 5 V environment. Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall time. This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. 2. Features and benefits  Wide supply voltage range from 1.65 V to 5.5 V  High noise immunity  Complies with JEDEC standard:  JESD8-7 (1.65 V to 1.95 V)  JESD8-5 (2.3 V to 2.7 V)  JESD8-B/JESD36 (2.7 V to 3.6 V).  24 mA output drive (VCC = 3.0 V)  CMOS low power consumption  Latch-up performance exceeds 250 mA  Direct interface with TTL levels  Inputs accept voltages up to 5 V  ESD protection:  HBM JESD22-A114F exceeds 2000 V  MM JESD22-A115-A exceeds 200 V  CDM JESD22-C101E exceeds 1000 V  Multiple package options  Specified from 40 C to +85 C and 40 C to +125 C 74LVC1G10 NXP Semiconductors Single 3-input NAND gate 3. Ordering information Table 1. Ordering information Type number Package Temperature range Name Description Version 74LVC1G10GW 40 C to +125 C SC-88 plastic surface-mounted package; 6 leads SOT363 74LVC1G10GV 40 C to +125 C SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457 74LVC1G10GM 40 C to +125 C XSON6 plastic extremely thin small outline package; no leads; 6 terminals; body 1  1.45  0.5 mm SOT886 74LVC1G10GF 40 C to +125 C XSON6 plastic extremely thin small outline package; no leads; 6 terminals; body 1  1  0.5 mm SOT891 74LVC1G10GN 40 C to +125 C XSON6 extremely thin small outline package; no leads; 6 terminals; body 0.9  1.0  0.35 mm SOT1115 74LVC1G10GS 40 C to +125 C XSON6 extremely thin small outline package; no leads; 6 terminals; body 1.0  1.0  0.35 mm SOT1202 4. Marking Table 2. Marking Type number Marking code[1] 74LVC1G10GW YM 74LVC1G10GV YM 74LVC1G10GM YM 74LVC1G10GF YM 74LVC1G10GN YM 74LVC1G10GS YM [1] The pin 1 indicator is located on the lower left corner of the device, below the marking code. 5. Functional diagram A B C 1 A 3 4 Y 1 3 6 6 Logic symbol 74LVC1G10 Product data sheet B Fig 2. Y 4 C 001aag687 001aag686 Fig 1. & IEC logic symbol All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 December 2011 Fig 3. 001aag688 Logic diagram © NXP B.V. 2011. All rights reserved. 2 of 17 74LVC1G10 NXP Semiconductors Single 3-input NAND gate 6. Pinning information 6.1 Pinning 74LVC1G10 74LVC1G10 A 1 6 A 1 6 C GND 2 5 VCC C GND 2 5 VCC B 3 4 Y B 3 4 Y A 1 6 C GND 2 5 VCC B 3 4 Y 001aag691 001aag690 Transparent top view Transparent top view 001aag689 Fig 4. 74LVC1G10 Pin configuration SOT363 and SOT457 Fig 5. Pin configuration SOT886 Fig 6. Pin configuration SOT891, SOT1115 and SOT1202 6.2 Pin description Table 3. Pin description Symbol Pin Description A 1 data input GND 2 ground (0 V) B 3 data input Y 4 data output VCC 5 supply voltage C 6 data input 7. Functional description Table 4. Function table[1] Input Output A B C Y H H H L L X X H X L X H X X L H [1] H = HIGH voltage level; L = LOW voltage level; X = don’t care. 74LVC1G10 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 December 2011 © NXP B.V. 2011. All rights reserved. 3 of 17 74LVC1G10 NXP Semiconductors Single 3-input NAND gate 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter VCC supply voltage IIK input clamping current VI input voltage IOK output clamping current VI < 0 V [1] IO output current ICC supply current IGND ground current Ptot total power dissipation Tstg storage temperature Min Max Unit 0.5 +6.5 V 50 - mA 0.5 +6.5 V - 50 mA Active mode [1][2] 0.5 VCC + 0.5 V Power-down mode [1][2] 0.5 +6.5 V - 50 mA - 100 mA 100 - mA - 250 mW 65 +150 C VO > VCC or VO < 0 V output voltage VO [1] Conditions VO = 0 V to VCC Tamb = 40 C to +125 C [3] The input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] When VCC = 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation. [3] For SC-88 and SC-74A packages: above 87.5 C the value of Ptot derates linearly with 4.0 mW/K. For XSON6 package: above 118 C the value of Ptot derates linearly with 7.8 mW/K. 9. Recommended operating conditions Table 6. Recommended operating conditions Symbol Parameter VCC Conditions Min Typ Max Unit supply voltage 1.65 - 5.5 V VI input voltage 0 - 5.5 V VO output voltage Active mode 0 - VCC V Power-down mode; VCC = 0 V 0 - 5.5 V 40 - +125 C VCC = 1.65 V to 2.7 V - - 20 ns/V VCC = 2.7 V to 5.5 V - - 10 ns/V Tamb ambient temperature t/V input transition rise and fall rate 74LVC1G10 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 December 2011 © NXP B.V. 2011. All rights reserved. 4 of 17 74LVC1G10 NXP Semiconductors Single 3-input NAND gate 10. Static characteristics Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter HIGH-level input voltage VIH LOW-level input voltage VIL VOH HIGH-level output voltage LOW-level output voltage VOL 40 C to +85 C Conditions VCC = 1.65 V to 1.95 V Min Typ[1] 40 C to +125 C Max Min Unit Max 0.65VCC - - 0.65VCC - V VCC = 2.3 V to 2.7 V 1.7 - - 1.7 - V VCC = 2.7 V to 3.6 V 2.0 - - 2.0 - V VCC = 4.5 V to 5.5 V 0.7VCC - - 0.7VCC - V VCC = 1.65 V to 1.95 V - - 0.35VCC - VCC = 2.3 V to 2.7 V - - 0.7 - 0.35VCC V 0.7 V VCC = 2.7 V to 3.6 V - - 0.8 - 0.8 V VCC = 4.5 V to 5.5 V - - 0.3VCC - 0.3VCC V VCC  0.1 - - VCC  0.1 - V IO = 4 mA; VCC = 1.65 V 1.2 - - 0.95 - V IO = 8 mA; VCC = 2.3 V 1.9 - - 1.7 - V IO = 12 mA; VCC = 2.7 V 2.2 - - 1.9 - V IO = 24 mA; VCC = 3.0 V 2.3 - - 2.0 - V IO = 32 mA; VCC = 4.5 V 3.8 - - 3.4 - V IO = 100 A; VCC = 1.65 V to 5.5 V - - 0.10 - 0.10 V IO = 4 mA; VCC = 1.65 V - - 0.45 - 0.70 V VI = VIH or VIL IO = 100 A; VCC = 1.65 V to 5.5 V VI = VIH or VIL IO = 8 mA; VCC = 2.3 V - - 0.30 - 0.45 V IO = 12 mA; VCC = 2.7 V - - 0.40 - 0.60 V IO = 24 mA; VCC = 3.0 V - - 0.55 - 0.80 V IO = 32 mA; VCC = 4.5 V - - 0.55 - 0.80 V II input leakage current VI = 5.5 V or GND; VCC = 0 V to 5.5 V - 0.1 5 - 100 A IOFF power-off leakage current VI or VO = 5.5 V; VCC = 0 V - 0.1 10 - 200 A ICC supply current VI = 5.5 V or GND; IO = 0 A; VCC = 1.65 V to 5.5 V - 0.1 10 - 200 A ICC additional supply VI = VCC  0.6 V; IO = 0 A; current VCC = 2.3 V to 5.5 V; per pin - 5 500 - 5000 A CI input capacitance - 3 - - - pF [1] VCC = 3.3 V; VI = GND to VCC All typical values are measured at Tamb = 25 C. 74LVC1G10 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 December 2011 © NXP B.V. 2011. All rights reserved. 5 of 17 74LVC1G10 NXP Semiconductors Single 3-input NAND gate 11. Dynamic characteristics Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 8. Symbol Parameter 40 C to +85 C Conditions Min Max Min Max VCC = 1.65 V to 1.95 V 1.5 4.7 18.0 1.5 21.5 ns VCC = 2.3 V to 2.7 V 1.0 3.0 6.5 1.0 7.8 ns VCC = 2.7 V 1.0 3.0 6.0 1.0 7.5 ns VCC = 3.0 V to 3.6 V 1.0 2.6 5.0 1.0 6.2 ns VCC = 4.5 V to 5.5 V 1.0 1.9 3.6 1.0 4.4 ns - 12 - - - pF propagation delay A, B and C to Y; see Figure 7 tpd power dissipation capacitance CPD 40 C to +125 C Unit Typ[1] VI = GND to VCC; VCC = 3.3 V [2] [3] [1] Typical values are measured at Tamb = 25 C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively. [2] tpd is the same as tPLH and tPHL. [3] CPD is used to determine the dynamic power dissipation (PD in W). PD = CPD  VCC2  fi  N + (CL  VCC2  fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; (CL  VCC2  fo) = sum of the outputs. 12. Waveforms VI A, B, C, input VM GND tPLH tPHL VOH VM Y output VOL 001aag692 Measurement points are given in Table 9. VOL and VOH are typical output voltage levels that occur with the output load. Fig 7. The input (A, B, C) to output (Y) propagation delays 74LVC1G10 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 December 2011 © NXP B.V. 2011. All rights reserved. 6 of 17 74LVC1G10 NXP Semiconductors Single 3-input NAND gate Table 9. Measurement points Supply voltage Input Output VCC VM VM 1.65 V to 1.95 V 0.5VCC 0.5VCC 2.3 V to 2.7 V 0.5VCC 0.5VCC 2.7 V 1.5 V 1.5 V 3.0 V to 3.6 V 1.5 V 1.5 V 4.5 V to 5.5 V 0.5VCC 0.5VCC VEXT VCC VI RL VO G DUT RT CL RL mna616 Test data is given in Table 10. Definitions for test circuit: RL = Load resistance. CL = Load capacitance including jig and probe capacitance. RT = Termination resistance should be equal to the output impedance Zo of the pulse generator. VEXT = External voltage for measuring switching times. Fig 8. Table 10. Test circuit for measuring switching times Test data Supply voltage Input Load VEXT VCC VI tr = tf CL RL tPLH, tPHL 1.65 V to 1.95 V VCC  2.0 ns 30 pF 1 k open 2.3 V to 2.7 V VCC  2.0 ns 30 pF 500  open 2.7 V 2.7 V  2.5 ns 50 pF 500  open 3.0 V to 3.6 V 2.7 V  2.5 ns 50 pF 500  open 4.5 V to 5.5 V VCC  2.5 ns 50 pF 500  open 74LVC1G10 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 December 2011 © NXP B.V. 2011. All rights reserved. 7 of 17 74LVC1G10 NXP Semiconductors Single 3-input NAND gate 13. Package outline Plastic surface-mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC SOT363 Fig 9. JEITA SC-88 EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 Package outline SOT363 (SC-88) 74LVC1G10 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 December 2011 © NXP B.V. 2011. All rights reserved. 8 of 17 74LVC1G10 NXP Semiconductors Single 3-input NAND gate Plastic surface-mounted package (TSOP6); 6 leads D SOT457 E B y A HE 6 5 X v M A 4 Q pin 1 index A A1 c 1 2 3 Lp bp e w M B detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.1 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC SOT457 JEITA SC-74 EUROPEAN PROJECTION ISSUE DATE 05-11-07 06-03-16 Fig 10. Package outline SOT457 (SC-74) 74LVC1G10 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 December 2011 © NXP B.V. 2011. All rights reserved. 9 of 17 74LVC1G10 NXP Semiconductors Single 3-input NAND gate XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm SOT886 b 1 2 3 4× (2) L L1 e 6 5 4 e1 e1 6× A (2) A1 D E terminal 1 index area 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A (1) max A1 max b D E e e1 L L1 mm 0.5 0.04 0.25 0.17 1.5 1.4 1.05 0.95 0.6 0.5 0.35 0.27 0.40 0.32 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. OUTLINE VERSION SOT886 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-07-15 04-07-22 MO-252 Fig 11. Package outline SOT886 (XSON6) 74LVC1G10 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 December 2011 © NXP B.V. 2011. All rights reserved. 10 of 17 74LVC1G10 NXP Semiconductors Single 3-input NAND gate XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1 x 0.5 mm 1 SOT891 b 3 2 4× (1) L L1 e 6 5 4 e1 e1 6× A (1) A1 D E terminal 1 index area 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max A1 max b D E e e1 L L1 mm 0.5 0.04 0.20 0.12 1.05 0.95 1.05 0.95 0.55 0.35 0.35 0.27 0.40 0.32 Note 1. Can be visible in some manufacturing processes. OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-04-06 07-05-15 SOT891 Fig 12. Package outline SOT891 (XSON6) 74LVC1G10 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 December 2011 © NXP B.V. 2011. All rights reserved. 11 of 17 74LVC1G10 NXP Semiconductors Single 3-input NAND gate XSON6: extremely thin small outline package; no leads; 6 terminals; body 0.9 x 1.0 x 0.35 mm 1 SOT1115 b 3 2 (4×)(2) L L1 e 6 5 4 e1 e1 (6×)(2) A1 A D E terminal 1 index area 0 0.5 scale Dimensions Unit mm 1 mm A(1) A1 b D E e e1 max 0.35 0.04 0.20 0.95 1.05 nom 0.15 0.90 1.00 0.55 min 0.12 0.85 0.95 0.3 L L1 0.35 0.40 0.30 0.35 0.27 0.32 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. Outline version sot1115_po References IEC JEDEC JEITA European projection Issue date 10-04-02 10-04-07 SOT1115 Fig 13. Package outline SOT1115 (XSON6) 74LVC1G10 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 December 2011 © NXP B.V. 2011. All rights reserved. 12 of 17 74LVC1G10 NXP Semiconductors Single 3-input NAND gate XSON6: extremely thin small outline package; no leads; 6 terminals; body 1.0 x 1.0 x 0.35 mm 1 SOT1202 b 3 2 (4×)(2) L L1 e 6 5 4 e1 e1 (6×)(2) A1 A D E terminal 1 index area 0 0.5 scale Dimensions Unit mm 1 mm A(1) A1 b D E e e1 L L1 max 0.35 0.04 0.20 1.05 1.05 0.35 0.40 nom 0.15 1.00 1.00 0.55 0.35 0.30 0.35 min 0.12 0.95 0.95 0.27 0.32 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. Outline version sot1202_po References IEC JEDEC JEITA European projection Issue date 10-04-02 10-04-06 SOT1202 Fig 14. Package outline SOT1202 (XSON6) 74LVC1G10 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 December 2011 © NXP B.V. 2011. All rights reserved. 13 of 17 74LVC1G10 NXP Semiconductors Single 3-input NAND gate 14. Abbreviations Table 11. Abbreviations Acronym Description CDM Charged Device Model CMOS Complementary Metal Oxide Semiconductor DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model TTL Transistor-Transistor Logic 15. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes 74LVC1G10 v.3 20111208 Product data sheet - 74LVC1G10 v.2 Modifications: • Legal pages updated. 74LVC1G10 v.2 20101021 Product data sheet - 74LVC1G10 v.1 74LVC1G10 v.1 20071002 Product data sheet - - 74LVC1G10 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 December 2011 © NXP B.V. 2011. All rights reserved. 14 of 17 74LVC1G10 NXP Semiconductors Single 3-input NAND gate 16. Legal information 16.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 16.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 16.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 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No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. 74LVC1G10 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 December 2011 © NXP B.V. 2011. All rights reserved. 15 of 17 74LVC1G10 NXP Semiconductors Single 3-input NAND gate Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond 16.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 17. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com 74LVC1G10 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 8 December 2011 © NXP B.V. 2011. All rights reserved. 16 of 17 74LVC1G10 NXP Semiconductors Single 3-input NAND gate 18. Contents 1 2 3 4 5 6 6.1 6.2 7 8 9 10 11 12 13 14 15 16 16.1 16.2 16.3 16.4 17 18 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Recommended operating conditions. . . . . . . . 4 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5 Dynamic characteristics . . . . . . . . . . . . . . . . . . 6 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Contact information. . . . . . . . . . . . . . . . . . . . . 16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 8 December 2011 Document identifier: 74LVC1G10