A2G35S160-01SR3

Freescale Semiconductor Technical Data Document Number: A2G35S160--01S Rev. 0, 5/2016 RF Power GaN Transistor This 32 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3400 to 3600 MHz. This part is characterized and performance is guaranteed for applications operating in the 3400 to 3600 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies. 3500 MHz  Typical Single--Carrier W--CDMA Performance: VDD = 48 Vdc, IDQ = 190 mA, Pout = 32 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) D (%) Output PAR (dB) ACPR (dBc) IRL (dB) 3400 MHz 15.6 37.2 7.0 –33.6 –16 3500 MHz 15.7 36.7 7.2 –34.1 –16 3600 MHz 15.9 38.9 7.2 –33.2 –13 A2G35S160--01SR3 3400–3600 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR Features NI--400S--2S  High Terminal Impedances for Optimal Broadband Performance  Designed for Digital Predistortion Error Correction Systems  Optimized for Doherty Applications 1 RFout/VDS RFin/VGS 2 (Top View) Figure 1. Pin Connections  Freescale Semiconductor, Inc., 2016. All rights reserved. RF Device Data Freescale Semiconductor, Inc. A2G35S160--01SR3 1 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS 125 Vdc Gate--Source Voltage VGS –8, 0 Vdc Operating Voltage VDD 0 to +55 Vdc Maximum Forward Gate Current @ TC = 25C IGMAX 19 mA Storage Temperature Range Tstg – 65 to +150 C Case Operating Temperature Range TC – 55 to +150 C TJ – 55 to +225 C TMAX 275 C Operating Junction Temperature Range Absolute Maximum Junction Temperature (1) Table 2. Thermal Characteristics Characteristic Thermal Resistance by Infrared Measurement, Active Die Surface--to--Case Case Temperature 76C, PD = 66 W Thermal Resistance by Finite Element Analysis, Junction--to--Case Case Temperature 85C, PD = 65 W Symbol Value Unit RJC (IR) (2) C/W 2.5 (3) C/W 1.9 RJC (FEA) Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1A Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) IV Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 150 — — Vdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 18.9 mAdc) VGS(th) –3.8 –3.1 –2.3 Vdc Gate Quiescent Voltage (VDD = 48 Vdc, ID = 190 mAdc, Measured in Functional Test) VGS(Q) –3.6 –2.6 –2.3 Vdc IGSS –5.9 — — mAdc Characteristic Off Characteristics Drain--Source Breakdown Voltage (VGS = –8 Vdc, ID = 18.9 mAdc) On Characteristics Gate--Source Leakage Current (VDS = 0 Vdc, VGS = –5 Vdc) 1. Functional operation above 225C has not been characterized and is not implied. Operation at TMAX (275C) reduces median time to failure by an order of magnitude; operation beyond TMAX could cause permanent damage. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955. 3. RJC (FEA) must be used for purposes related to reliability and limitations on maximum junction temperature. MTTF may be estimated by the expression MTTF (hours) = 10[A + B/(T + 273)], where T is the junction temperature in degrees Celsius, A = –8.44 and B = 7210. (continued) A2G35S160--01SR3 2 RF Device Data Freescale Semiconductor, Inc. Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit (1) (In Functional Tests Freescale Test Fixture, 50 ohm system) VDD = 48 Vdc, IDQ = 190 mA, Pout = 32 W Avg., f = 3500 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. [See note on correct biasing sequence.] Power Gain Gps 13.5 15.7 18.0 dB Drain Efficiency D 31.6 36.7 — % Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio PAR 6.6 7.2 — dB ACPR — –34.1 –31.8 dBc IRL — –16 –8 dB Input Return Loss Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 190 mA, f = 3500 MHz, 12 sec(on), 10% Duty Cycle VSWR 10:1 at 55 Vdc, 153 W Pulsed CW Output Power (3 dB Input Overdrive from 126 W Pulsed CW Rated Power) No Device Degradation Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 48 Vdc, IDQ = 190 mA, 3400–3600 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 126 — W Pout @ 3 dB Compression Point (2) P3dB — 162 — W  — –15.6 —  VBWres — 110 — MHz Gain Flatness in 200 MHz Bandwidth @ Pout = 32 W Avg. GF — 0.5 — dB Gain Variation over Temperature (–30C to +85C) G — 0.02 — dB/C P1dB — 0.01 — dB/C AM/PM (Maximum value measured at the P3dB compression point across the 3400–3600 MHz bandwidth) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Output Power Variation over Temperature (–30C to +85C) Table 5. Ordering Information Device A2G35S160--01SR3 Tape and Reel Information R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel Package NI--400S--2S 1. Part internally input matched. 2. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF. NOTE: Correct Biasing Sequence for GaN Depletion Mode Transistors Turning the device ON 1. Set VGS to the pinch--off (VP) voltage, typically –5 V 2. Turn on VDS to nominal supply voltage (50 V) 3. Increase VGS until IDS current is attained 4. Apply RF input power to desired level Turning the device OFF 1. Turn RF power off 2. Reduce VGS down to VP, typically –5 V 3. Reduce VDS down to 0 V (Adequate time must be allowed for VDS to reduce to 0 V to prevent severe damage to device.) 4. Turn off VGS A2G35S160--01SR3 RF Device Data Freescale Semiconductor, Inc. 3 C22 C15 C13 C3 C1 C16 C14 C4 C2 C6 C17 R2 C20 C18 CUT OUT AREA R1 C5 C7 C10 C8 C12 C11 C9 C21 C19 A2G35S160--01S Rev. 1 D74587 C23 Figure 2. A2G35S160--01SR3 Test Circuit Component Layout Table 6. A2G35S160--01SR3 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C8, C13, C18 0.022 F Chip Capacitors GRM31MR72A223KA01L Murata C2, C9, C14, C19 1 nF Chip Capacitors GRM1885C2A102JA01D Murata C3, C10, C15, C20 1 F Chip Capacitors GRM31CR72A105KA01L Murata C4, C11, C16, C21 10 F Chip Capacitors GRM32ER61H106KA12L Murata C5, C17 12 pF Chip Capacitors GQM1875C2E120FB12D Murata C6, C12 15 pF Chip Capacitors GQM1875C2E150JB12D Murata C7 0.6 pF Chip Capacitor ATC600F0R6BW250XT ATC C22, C23 330 F, 63 V Electrolytic Capacitors MCRH63V337M13X21-RH Multicomp R1, R2 5.60 , 1/4 W Chip Resistors CRCW12065R60FKEA Vishay PCB Rogers RO4350B, 0.023, r = 3.66 D74587 MTL A2G35S160--01SR3 4 RF Device Data Freescale Semiconductor, Inc. 38 37 D 15.9 36 15.8 Gps 15.7 15.6 15.4 ACPR 3410 3440 –12 –33 IRL 15.3 3380 –11 –32 PARC 15.5 –30 –31 3470 3500 3530 3560 3590 –34 –35 3620 –13 –14 –15 –16 –2.2 –2.4 –2.6 –2.8 –3 PARC (dB) 16 39 ACPR (dBc) Gps, POWER GAIN (dB) VDD = 48 Vdc, Pout = 32 W (Avg.), IDQ = 190 mA 16.2 Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth 16.1 Input Signal PAR = 9.9 dB @ 0.01%, Probability on CCDF IRL, INPUT RETURN LOSS (dB) 40 16.3 D, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS — 3400–3600 MHz –3.2 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 32 Watts Avg. 0 VDD = 48 Vdc, Pout = 60 W (PEP), IDQ = 190 mA Two--Tone Measurements, (f1 + f2)/2 = Center Frequency –15 of 3500 MHz IM3--U –30 IM5--U –45 IM3--L IM5--L IM7--L IM7--U –60 –75 10 1 100 300 TWO--TONE SPACING (MHz) 16.5 0 16 15.5 15 14.5 14 VDD = 48 Vdc, IDQ = 190 mA, f = 3500 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth –15 50 –20 D Gps 40 –1 –1 dB = 16.4 W –2 30 –2 dB = 25.5 W –3 ACPR –4 –5 60 20 –3 dB = 34.5 W PARC 10 Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 5 15 25 35 45 0 55 –25 –30 ACPR (dBc) 1 D DRAIN EFFICIENCY (%) 17 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) Figure 4. Intermodulation Distortion Products versus Two--Tone Spacing –35 –40 –45 Pout, OUTPUT POWER (WATTS) Figure 5. Output Peak--to--Average Ratio Compression (PARC) versus Output Power A2G35S160--01SR3 RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS — 3400–3600 MHz 15 3400 MHz 3500 MHz 3600 MHz 3500 MHz 3400 MHz –15 55 –20 45 35 3600 MHz Gps 12 25 3400 MHz 9 15 3500 MHz 3600 MHz D 6 ACPR 65 1 10 100 5 200 –25 –30 –35 ACPR (dBc) VDD = 48 Vdc, IDQ = 190 mA Single--Carrier W--CDMA, 3.84 MHz 21 Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 18 D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 24 –40 –45 Pout, OUTPUT POWER (WATTS) AVG. Figure 6. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power GAIN (dB) 16 0 VDD = 48 Vdc Pin = 0 dBm IDQ = 190 mA Gain –3 14 –6 12 –9 10 –12 8 6 2700 –15 IRL 2850 3000 3150 3300 3450 IRL (dB) 18 3600 3750 –18 3900 f, FREQUENCY (MHz) Figure 7. Broadband Frequency Response A2G35S160--01SR3 6 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS A2G35S160--01SR3 RF Device Data Freescale Semiconductor, Inc. 7 A2G35S160--01SR3 8 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes  AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins  EB212: Using Data Sheet Impedances for RF LDMOS Devices Software  RF High Power Model  .s2p File Development Tools  Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go to http://www.nxp.com/RF 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 May 2016 Description  Initial Release of Data Sheet A2G35S160--01SR3 RF Device Data Freescale Semiconductor, Inc. 9 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. 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U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. E 2016 Freescale Semiconductor, Inc. A2G35S160--01SR3 Document Number: A2G35S160--01S Rev. 0, 5/2016 10 RF Device Data Freescale Semiconductor, Inc.