A2T18H410-24SR6

Freescale Semiconductor Technical Data Document Number: A2T18H410--24S Rev. 0, 5/2015 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 71 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz. A2T18H410--24SR6 1800 MHz  Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQA = 800 mA, VGSB = 0.8 Vdc, Pout = 71 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) D (%) Output PAR (dB) 1805 MHz 17.4 51.2 7.9 –34.5 1840 MHz 17.5 50.1 8.3 –36.9 1880 MHz 17.6 49.3 8.0 –36.8 1805–1880 MHz, 71 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTOR ACPR (dBc) Features  Advanced High Performance In--Package Doherty  Greater Negative Gate--Source Voltage Range for Improved Class C Operation  Designed for Digital Predistortion Error Correction Systems NI--1230S--4L2L 6 VBWA(1) Carrier RFinA/VGSA 1 5 RFoutA/VDSA RFinB/VGSB 2 4 RFoutB/VDSB Peaking 3 VBWB(1) (Top View) Figure 1. Pin Connections 1. Device cannot operate with the VDD current supplied through pin 3 and pin 6.  Freescale Semiconductor, Inc., 2015. All rights reserved. RF Device Data Freescale Semiconductor, Inc. A2T18H410--24SR6 1 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS –0.5, +65 Vdc Gate--Source Voltage VGS –6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg –65 to +150 C Case Operating Temperature Range TC –40 to +150 C TJ –40 to +225 C CW 282 1.5 W W/C Operating Junction Temperature Range (1,2) CW Operation @ TC = 25C Derate above 25C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 72C, 71 W Avg., W--CDMA, 28 Vdc, IDQA = 800 mA, VGSB = 0.8 Vdc, 1840 MHz Symbol Value (2,3) Unit RJC 0.24 C/W Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) B Charge Device Model (per JESD22--C101) IV Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 32 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 160 Adc) VGS(th) 1.4 1.5 2.3 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, IDA = 800 mAdc, Measured in Functional Test) VGS(Q) 2.2 2.6 3.0 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1.6 Adc) VDS(on) 0.1 0.15 0.3 Vdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 270 Adc) VGS(th) 0.8 1.2 1.6 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 2.7 Adc) VDS(on) 0.1 0.15 0.3 Vdc Characteristic Off Characteristics (4) On Characteristics -- Side A (Carrier) On Characteristics -- Side B (Peaking) 1. 2. 3. 4. Continuous use at maximum temperature will affect MTTF. MTTF calculator available at http://www.freescale.com/rf/calculators. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955. Each side of device measured separately. (continued) A2T18H410--24SR6 2 RF Device Data Freescale Semiconductor, Inc. Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (1,2) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 800 mA, VGSB = 0.8 Vdc, Pout = 71 W Avg., f = 1805 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Gps 16.5 17.4 19.5 dB Drain Efficiency D 47.0 51.2 — % PAR 7.4 7.9 — dB ACPR — –34.5 –28.0 dBc Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Load Mismatch (2) (In Freescale Doherty Test Fixture, 50 ohm system) IDQA = 800 mA, VGSB = 0.8 Vdc, f = 1840 MHz VSWR 10:1 at 32 Vdc, 440 W CW (3) Output Power (3 dB Input Overdrive from 376 W CW (3) Rated Power) No Device Degradation Typical Performance (2) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 800 mA, VGSB = 0.8 Vdc, 1805–1880 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 355 (3) — W Pout @ 3 dB Compression Point (4) P3dB — 457 — W  — –12.4 —  VBWres — 90 — MHz Gain Flatness in 75 MHz Bandwidth @ Pout = 71 W Avg. GF — 0.1 — dB Gain Variation over Temperature (–30C to +85C) G — 0.0056 — dB/C P1dB — 0.0077 — dB/C AM/PM (Maximum value measured at the P3dB compression point across the 1805–1880 MHz frequency range) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Output Power Variation over Temperature (–30C to +85C) (3) Table 5. Ordering Information Device A2T18H410--24SR6 1. 2. 3. 4. Tape and Reel Information R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel Package NI--1230S--4L2L Part internally matched both on input and output. Measurements made with device in an asymmetrical Doherty configuration. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF. A2T18H410--24SR6 RF Device Data Freescale Semiconductor, Inc. 3 VDDA VDDA C17 C9 R2 C1 C10 C19 C2 D68602 C11 C4 C12 Z1 R1 C6 C5 C8 A2T18H410 Rev. 4 C7 R3 CUT OUT AREA C3 C13 C15 C16 C14 C18 VDDB VGGB Figure 2. A2T18H410--24SR6 Test Circuit Component Layout Table 6. A2T18H410--24SR6 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C7, C9, C14, C16, C19 10 uF Chip Capacitors C5750X7S2A106M230KB TDK C2, C8, C10, C15 12 pF Chip Capacitors ATC100B120JT500XT ATC C3 1.2 pF Chip Capacitor ATC100B1R2BT500XT ATC C4, C6 6.2 pF Chip Capacitors ATC100B6R2BT500XT ATC C5, C11 1.0 pF Chip Capacitors ATC100B1R0CT500XT ATC C12 5.1 pF Chip Capacitor ATC100B5R1CT500XT ATC C13 4.7 pF Chip Capacitor ATC100B4R7CT500XT ATC C17, C18 470 uF, 63 V Electrolytic Capacitors MCGPR63V477M13X26 Multicomp R1 50  Termination CW12010T0050GBK ATC R2, R3 2.7 , 1/4 W Chip Resistors CRCW12062R7FKEA Vishay Z1 1700–2000 MHz Band, 5 dB Directional Coupler X3C19P1-05S Anaren PCB Rogers RO4350B, 0.020, r = 3.66 D68602 MTL A2T18H410--24SR6 4 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS D 17.5 17.4 48 Gps 17.3 PARC 17.2 17.1 –27 –1.4 –30 –1.6 –33 17 –36 ACPR 16.9 16.8 1760 1780 1800 1820 1840 1860 f, FREQUENCY (MHz) –39 1880 1900 –1.8 –2 –2.2 PARC (dB) Gps, POWER GAIN (dB) 17.6 ACPR (dBc) 17.7 D, DRAIN EFFICIENCY (%) 56 VDD = 28 Vdc, Pout = 71 W (Avg.), IDQA = 800 mA VGSB = 0.8 Vdc, Single--Carrier W--CDMA, 3.84 MHz 54 Channel Bandwidth, Input Signal PAR = 9.9 dB @ 52 0.01% Probability on CCDF 50 17.8 –2.4 –42 1920 IMD, INTERMODULATION DISTORTION (dBc) Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 71 Watts Avg. –10 VDD = 28 Vdc, Pout = 8 W (PEP), IDQA = 800 mA VGSB = 0.8 Vdc, Two--Tone Measurements –20 (f1 + f2)/2 = Center Frequency of 1840 MHz –30 IM3--L IM3--U IM5--U –40 IM5--L –50 IM7--L –60 –70 1 IM7--U 10 500 100 TWO--TONE SPACING (MHz) 17.6 0 17.4 17.2 17 16.8 16.6 –1 VDD = 28 Vdc, IDQA = 800 mA, VGSB = 0.8 Vdc f = 1840 MHz, Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth –3 Gps D ACPR –5 25 PARC Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 50 55 –32 75 100 Pout, OUTPUT POWER (WATTS) 45 40 –2 dB = 78.1 W –3 dB = 100 W –4 –30 50 –1 dB = 55 W –2 60 125 –34 –36 ACPR (dBc) 1 D DRAIN EFFICIENCY (%) 17.8 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) Figure 4. Intermodulation Distortion Products versus Two--Tone Spacing –38 35 –40 30 150 –42 Figure 5. Output Peak--to--Average Ratio Compression (PARC) versus Output Power A2T18H410--24SR6 RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS Gps, POWER GAIN (dB) 20 18 1805 MHz Gps 1805 MHz 1840 MHz 1880 MHz 1840 MHz 16 1840 MHz 10 1880 MHz ACPR 1880 MHz 50 –10 30 20 10 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 1 0 40 1805 MHz 14 12 D 60 0 500 10 100 Pout, OUTPUT POWER (WATTS) AVG. –20 –30 –40 ACPR (dBc) VDD = 28 Vdc, IDQA = 800 mA, VGSB = 0.8 Vdc Single--Carrier W--CDMA D, DRAIN EFFICIENCY (%) 22 –50 –60 Figure 6. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 22 20 Gain GAIN (dB) 18 16 14 VDD = 28 Vdc Pin = 0 dBm IDQA = 800 mA VGSB = 0.8 Vdc 12 10 1600 1680 1760 1840 1920 2000 f, FREQUENCY (MHz) 2080 2160 2240 Figure 7. Broadband Frequency Response A2T18H410--24SR6 6 RF Device Data Freescale Semiconductor, Inc. Table 7. Carrier Side Load Pull Performance — Maximum Power Tuning VDD = 28 Vdc, IDQA = 785 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power P1dB f (MHz) Zsource () Zin () 1805 1.32 – j3.98 1.36 + j3.59 1840 1.57 – j4.28 1.50 + j3.86 1880 2.23 – j4.77 1.99 + j4.16 Zload () (1) Gain (dB) (dBm) (W) D (%) AM/PM () 1.01 – j3.41 18.7 52.6 181 58.4 –12 0.98 – j3.56 18.7 52.6 183 58.3 –12 0.98 – j3.75 18.6 52.6 181 57.2 –12 Max Output Power P3dB f (MHz) Zsource () Zin () Zload (2) () Gain (dB) (dBm) (W) D (%) AM/PM () 1805 1.32 – j3.98 1.22 + j3.74 1.02 – j3.56 16.5 53.3 215 59.4 –15 1840 1.57 – j4.28 1.37 + j4.04 0.99 – j3.72 16.5 53.4 217 59.2 –15 1880 2.23 – j4.77 1.87 + j4.43 1.00 – j3.90 16.4 53.3 214 58.3 –16 (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 8. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning VDD = 28 Vdc, IDQA = 785 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency P1dB f (MHz) Zsource () Zin () Zload (1) () Gain (dB) (dBm) (W) D (%) AM/PM () 1805 1.32 – j3.98 1.35 + j3.89 2.22 – j2.08 22.4 49.9 98 72.1 –19 1840 1.57 – j4.28 1.55 + j4.11 2.07 – j2.49 22.0 50.3 108 71.1 –17 1880 2.23 – j4.77 2.11 + j4.44 1.93 – j2.67 21.8 50.4 109 70.0 –18 Max Drain Efficiency P3dB Gain (dB) (dBm) (W) D (%) AM/PM () 2.04 – j2.31 20.1 51.1 128 73.3 –25 1.38 + j4.21 1.96 – j2.52 19.9 51.2 130 72.5 –24 1.94 + j4.64 1.93 – j2.64 19.9 51.0 127 71.4 –24 f (MHz) Zsource () Zin () 1805 1.32 – j3.98 1.20 + j3.91 1840 1.57 – j4.28 1880 2.23 – j4.77 Zload () (2) (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload A2T18H410--24SR6 RF Device Data Freescale Semiconductor, Inc. 7 Table 9. Peaking Side Load Pull Performance — Maximum Power Tuning VDD = 28 Vdc, VGSB = 0.8 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power P1dB f (MHz) Zsource () Zin () 1805 1.32 – j3.98 1.55 + j4.16 1840 1.84 – j4.30 1.90 + j4.53 1880 2.67 – j4.46 2.83 + j4.90 Zload () (1) Gain (dB) (dBm) (W) D (%) AM/PM () 1.38 – j3.61 15.9 54.9 312 57.4 –33 1.22 – j3.80 15.6 55.1 321 54.6 –32 1.40 – j3.92 16.0 55.0 315 56.4 –33 Max Output Power P3dB f (MHz) Zsource () Zin () Zload (2) () Gain (dB) (dBm) (W) D (%) AM/PM () 1805 1.32 – j3.98 1.59 + j4.36 1.35 – j3.73 13.7 55.7 370 59.3 –40 1840 1.84 – j4.30 2.01 + j4.79 1.19 – j3.91 13.4 55.8 380 57.1 –39 1880 2.67 – j4.46 3.20 + j5.21 1.38 – j4.21 13.6 55.7 372 57.3 –39 (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 10. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning VDD = 28 Vdc, VGSB = 0.8 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency P1dB f (MHz) Zsource () Zin () Zload (1) () Gain (dB) (dBm) (W) D (%) AM/PM () 1805 1.32 – j3.98 1.39 + j4.15 3.59 – j2.93 17.2 53.0 201 69.3 –41 1840 1.84 – j4.30 1.67 + j4.51 3.49 – j2.75 17.2 53.1 204 69.4 –40 1880 2.67 – j4.46 2.45 + j4.92 3.12 – j2.36 17.3 53.0 199 68.8 –41 Max Drain Efficiency P3dB Gain (dB) (dBm) (W) D (%) AM/PM () 3.30 – j3.71 14.8 53.9 248 66.3 –47 1.91 + j4.81 2.68 – j3.69 14.8 54.7 292 66.2 –45 2.96 + j5.27 2.97 – j3.26 15.0 54.3 269 66.9 –47 f (MHz) Zsource () Zin () 1805 1.32 – j3.98 1.52 + j4.38 1840 1.84 – j4.30 1880 2.67 – j4.46 Zload () (2) (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload A2T18H410--24SR6 8 RF Device Data Freescale Semiconductor, Inc. P1dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 1840 MHz –1 –1 –1.5 E E –2.5 50 50.5 –3 –3.5 –2 49.5 51.5 P –4 52.5 IMAGINARY () IMAGINARY () –2 –1.5 48.5 49 51 52 1 1.5 2 REAL () 3 2.5 64 60 56 –5 0.5 3.5 –1 22.5 22 –3 21.5 21 P P 20.5 –4 19.5 –4.5 1.5 2 REAL () 3 3.5 –10 –16 –22 –24 –2.5 –20 –12 –14 EE –18 –3 –3.5 P P –4.5 2.5 58 –4 20 19 1 2.5 --10 –2 IMAGINARY () EE 2 REAL () –1.5 –2 –2.5 1.5 1 62 Figure 9. P1dB Load Pull Efficiency Contours (%) 23 –1.5 IMAGINARY () 66 P P –4.5 –1 –5 0.5 68 –3.5 Figure 8. P1dB Load Pull Output Power Contours (dBm) –3.5 70 –3 –4 –4.5 –5 0.5 E E –2.5 3 3.5 Figure 10. P1dB Load Pull Gain Contours (dB) NOTE: –5 0.5 –10 1 –10 1.5 2 REAL () 2.5 3 3.5 Figure 11. P1dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency A2T18H410--24SR6 RF Device Data Freescale Semiconductor, Inc. 9 P3dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 1840 MHz –1 –1 –1.5 –1.5 49.5 50.5 E E –2.5 51 –3 –3.5 –2 50 IMAGINARY () IMAGINARY () –2 51.5 PP 52.5 53 –4 52 1.5 1 2 REAL () 3 2.5 3.5 PP 64 –1.5 20.5 20 –3 19.5 PP –4 19 18.5 16.5 –4.5 1 17 1.5 17.5 1.5 2 REAL () 2.5 –24 –30 –28 –26 3.5 –18 –22 EE –2.5 –3 –16 –3.5 P P –4 18 3 –20 –2 IMAGINARY () E E 58 56 1 62 60 Figure 13. P3dB Load Pull Efficiency Contours (%) –1.5 –2 IMAGINARY () 66 –5 0.5 –1 –5 0.5 68 –3.5 –1 –2.5 70 72 –3 –4.5 Figure 12. P3dB Load Pull Output Power Contours (dBm) –3.5 EE –2.5 –4 –4.5 –5 0.5 66 –14 –4.5 2 REAL () 2.5 3 3.5 Figure 14. P3dB Load Pull Gain Contours (dB) NOTE: –5 0.5 1 1.5 2 REAL () 2.5 3 3.5 Figure 15. P3dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency A2T18H410--24SR6 10 RF Device Data Freescale Semiconductor, Inc. P1dB – TYPICAL PEAKING LOAD PULL CONTOURS — 1840 MHz 0 0 62 51 51.5 –2 52 E E –3 54.5 PP 55 –4 –5 –1 IMAGINARY () IMAGINARY () –1 1 1.5 2 2.5 3 3.5 4 REAL () 4.5 5 5.5 –5 6 66 64 PP 1.5 60 58 54 1 62 56 2 58 2.5 56 3 3.5 4 REAL () 4.5 5 5.5 6 Figure 17. P1dB Load Pull Efficiency Contours (%) 0 0 –1 –1 18 –2 17.5 E E –3 IMAGINARY () IMAGINARY () –3 –4 Figure 16. P1dB Load Pull Output Power Contours (dBm) 17 16.5 PP –4 1 –30 –3 1.5 2 2.5 3 3.5 4 REAL () 4.5 5 5.5 6 Figure 18. P1dB Load Pull Gain Contours (dB) NOTE: –5 –42 EE –40 P 16 16 15.5 –44 –28 –2 –4 15 –5 68 EE 53 53.5 54 52.5 –2 –38 1 1.5 –36 –34 –32 2 2.5 3 3.5 4 REAL () 4.5 5 5.5 6 Figure 19. P1dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency A2T18H410--24SR6 RF Device Data Freescale Semiconductor, Inc. 11 P3dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 1840 MHz –2 52 –2 52.5 –2.5 IMAGINARY () –3.5 EE P P –4 55.5 –4.5 53 52 52.5 –3 IMAGINARY () 53.5 –3 54 55 54.5 –5.5 –6 –6 4 REAL () 5 6 7 –2 58 56 54 50 52 1 3 2 52 4 REAL () 5 6 7 –2 15.5 –2.5 IMAGINARY () E E P P –4 14.5 –4.5 14 –5 –5.5 1 12.5 13.5 12 13 2 –50 –3 15 –3.5 –50 –2.5 –3 IMAGINARY () 60 Figure 21. P3dB Load Pull Efficiency Contours (%) Figure 20. P3dB Load Pull Output Power Contours (dBm) –6 62 64 –4.5 –5.5 3 E E P P –4 –5 2 66 –3.5 –5 1 50 –2.5 –48 –3.5 P P –4 –4.5 –42 –36 –5.5 4 REAL () 5 6 7 Figure 22. P3dB Load Pull Gain Contours (dB) NOTE: –46 –44 –5 3 E E –6 –40 –38 –34 1 2 3 4 REAL () 5 6 7 Figure 23. P3dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency A2T18H410--24SR6 12 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS A2T18H410--24SR6 RF Device Data Freescale Semiconductor, Inc. 13 A2T18H410--24SR6 14 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes  AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins  EB212: Using Data Sheet Impedances for RF LDMOS Devices Software  Electromigration MTTF Calculator  RF High Power Model  .s2p File Development Tools  Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go to http://www.freescale.com/rf 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 May 2015 Description  Initial Release of Data Sheet A2T18H410--24SR6 RF Device Data Freescale Semiconductor, Inc. 15 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. 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U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. E 2015 Freescale Semiconductor, Inc. A2T18H410--24SR6 Document Number: A2T18H410--24S Rev. 0, 5/2015 16 RF Device Data Freescale Semiconductor, Inc.