A2T21S260-12SR3

Freescale Semiconductor Technical Data Document Number: A2T21S260--12S Rev. 0, 8/2015 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 65 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz. A2T21S260--12SR3 2100 MHz  Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ = 1200 mA, Pout = 65 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) D (%) Output PAR (dB) ACPR (dBc) IRL (dB) 2110 MHz 18.5 30.4 6.9 –32.6 –17 2140 MHz 18.6 30.3 6.8 –32.8 –13 2170 MHz 18.7 30.6 6.8 –32.0 –11 2110–2170 MHz, 65 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTOR Features  Greater Negative Gate--Source Voltage Range for Improved Class C Operation  Designed for Digital Predistortion Error Correction Systems  Optimized for Doherty Applications NI--780S--2L2L 4 VBW (1) RFin/VGS 1 3 RFout/VDS 2 VBW (1) (Top View) Figure 1. Pin Connections 1. Device cannot operate with VDD current supplied through pin 2 and pin 4.  Freescale Semiconductor, Inc., 2015. All rights reserved. RF Device Data Freescale Semiconductor, Inc. A2T21S260--12SR3 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS –0.5, +65 Vdc Gate--Source Voltage VGS –6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg –65 to +150 C Case Operating Temperature Range TC –40 to +150 C Operating Junction Temperature Range (1,2) TJ –40 to +225 C CW 346 3.1 W W/C Symbol Value (2,3) Unit RJC 0.28 C/W CW Operation @ TC = 25C Derate above 25C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 76C, 65 W CW, 28 Vdc, IDQ = 1200 mA, 2140 MHz Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) B Charge Device Model (per JESD22--C101) IV Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 32 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 270 Adc) VGS(th) 0.8 1.2 1.6 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1200 mAdc, Measured in Functional Test) VGS(Q) 1.4 1.9 2.2 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 2.7 Adc) VDS(on) 0.1 0.2 0.3 Vdc Characteristic Off Characteristics On Characteristics Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 65 W Avg., f = 2170 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. 2. 3. 4. Gps 18.0 18.7 21.0 dB D 29.0 30.6 — % PAR 6.3 6.8 — dB ACPR — –32.0 –29.0 dBc IRL — –11 –8 dB Continuous use at maximum temperature will affect MTTF. MTTF calculator available at http://www.freescale.com/rf/calculators. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955. Part internally matched both on input and output. (continued) A2T21S260--12SR3 2 RF Device Data Freescale Semiconductor, Inc. Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 1200 mA, f = 2140 MHz, 12 sec(on), 12% Duty Cycle VSWR 5:1 at 32 Vdc, 290 W Pulsed CW Output Power (0 dB Input Overdrive from 208 W Pulsed CW Rated Power) No Device Degradation Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, 2110–2170 MHz Bandwidth Pout @ 1 dB Compression Point, Pulse P1dB — 208 — W  — –20.9 —  VBWres — 90 — MHz Gain Flatness in 60 MHz Bandwidth @ Pout = 65 W Avg. GF — 0.3 — dB Gain Variation over Temperature (–30C to +85C) G — 0.015 — dB/C P1dB — 0.013 — dB/C AM/PM (Maximum value measured at the P3dB compression point across the 2110–2170 MHz bandwidth) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Output Power Variation over Temperature (–30C to +85C) (1) Table 5. Ordering Information Device A2T21S260--12SR3 Tape and Reel Information R3 Suffix = 250 Units, 44 mm Tape Width, 13--inch Reel Package NI--780S--2L2L 1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. A2T21S260--12SR3 RF Device Data Freescale Semiconductor, Inc. 3 VDD C9 VGG C10 R1 C11 C7 C5 C6 CUT OUT AREA C1 C2 C3 C4 C15 C8 C16 C12 R2 C13 VGG C14 VDD A2T21S260--12S Rev. 1 D65935 Figure 2. A2T21S260--12SR3 Test Circuit Component Layout Table 6. A2T21S260--12SR3 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C4, C6, C16 8.2 pF Chip Capacitors ATC100B8R2CT500XT ATC C2 1.0 pF Chip Capacitor ATC100B1R0BT500XT ATC C3, C5, C7, C8, C10, C13 10 uF Chip Capacitors C5750X7S2A106M230KB TDK C9, C14 470 uF, 100 V Electrolytic Capacitors MCGPR100V477M16X32-RH Multicomp C11, C12 6.8 pF Chip Capacitors ATC100B6R8CT500XT ATC C15 0.1 pF Chip Capacitor ATC600F0R1BT250XT ATC R1, R2 2.2 Ω, 1/4 W Chip Resistors CRCW12062R20JNEA Vishay PCB Rogers RO4350B, 0.020, r = 3.66 D65939 MTL A2T21S260--12SR3 4 RF Device Data Freescale Semiconductor, Inc. 18.8 31 30.5 D 18.7 30 Gps 18.6 IRL 18.5 PARC 18.4 –29 –5 –30 –10 –31 18.3 –32 18.2 –33 18.1 2060 ACPR 2080 2100 2120 2140 2160 f, FREQUENCY (MHz) 2180 2200 –15 –20 –25 –34 2220 –30 –2.6 –2.8 –3 –3.2 –3.4 PARC (dB) 18.9 31.5 IRL, INPUT RETURN LOSS (dB) 19 Gps, POWER GAIN (dB) 32 VDD = 28 Vdc, Pout = 65 W (Avg.), IDQ = 1200 mA Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF ACPR (dBc) 19.1 D, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS –3.6 IMD, INTERMODULATION DISTORTION (dBc) Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 65 Watts Avg. 0 VDD = 28 Vdc, Pout = 162 W (PEP) IDQ = 1200 mA, Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz –15 IM3--U –30 IM3--L –45 IM5--U IM5--L IM7--L –60 IM7--U –75 1 10 100 200 TWO--TONE SPACING (MHz) 18.8 0 18.6 18.4 18.2 18 17.8 VDD = 28 Vdc, IDQ = 1200 mA, f = 2140 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth –2 –5 20 25 20 –3 dB = 64 W PARC Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 35 –25 30 –2 dB = 49 W –4 35 ACPR –1 dB = 35 W –3 –20 D Gps –1 40 50 65 Pout, OUTPUT POWER (WATTS) 80 –30 –35 ACPR (dBc) 1 D DRAIN EFFICIENCY (%) 19 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) Figure 4. Intermodulation Distortion Products versus Two--Tone Spacing –40 15 –45 10 95 –50 Figure 5. Output Peak--to--Average Ratio Compression (PARC) versus Output Power A2T21S260--12SR3 RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS Gps, POWER GAIN (dB) 20 18 2140 MHz 14 2110 MHz 12 50 –10 ACPR 30 2170 MHz 20 2110 MHz 2140 MHz 2170 MHz Gps 10 0 400 100 10 Pout, OUTPUT POWER (WATTS) AVG. 1 0 40 2170 MHz 2110 MHz 2140 MHz 16 10 D 60 –20 –30 –40 ACPR (dBc) VDD = 28 Vdc, IDQ = 1200 mA Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF D, DRAIN EFFICIENCY (%) 22 –50 –60 Figure 6. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 6 27 VDD = 28 Vdc Pin = 0 dBm IDQ = 1200 mA 24 0 –6 Gain 18 --12 15 --18 --24 12 IRL 9 1700 IRL (dB) GAIN (dB) 21 1850 2000 2150 2300 2450 f, FREQUENCY (MHz) 2600 2750 --30 2900 Figure 7. Broadband Frequency Response A2T21S260--12SR3 6 RF Device Data Freescale Semiconductor, Inc. Table 7. Load Pull Performance — Maximum Power Tuning — Class AB VDD = 28 Vdc, IDQ = 1181 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power P1dB f (MHz) Zsource () Zin () Zload () (1) Gain (dB) (dBm) (W) D (%) AM/PM () 2110 2.87 – j5.93 2.53 + j5.00 1.28 – j3.01 18.5 55.3 337 58.4 –19 2140 3.74 – j6.26 3.18 + j5.38 1.32 – j2.92 18.9 55.1 327 57.5 –20 2170 5.24 – j6.85 4.26 + j5.74 1.27 – j2.92 18.9 55.2 328 56.6 –20 Max Output Power P3dB f (MHz) Zsource () Zin () Zload (2) () Gain (dB) (dBm) (W) D (%) AM/PM () 2110 2.87 – j5.93 2.60 + j5.30 1.28 – j3.18 16.3 56.0 397 60.1 –24 2140 3.74 – j6.26 3.35 + j5.73 1.35 – j3.09 16.7 55.8 383 59.0 –26 2170 5.24 – j6.85 4.63 + j6.10 1.33 – j3.13 16.7 55.8 384 58.5 –26 (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 8. Load Pull Performance — Maximum Drain Efficiency Tuning — Class AB VDD = 28 Vdc, IDQ = 1181 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency P1dB f (MHz) Zsource () Zin () Zload (1) () Gain (dB) (dBm) (W) D (%) AM/PM () 2110 2.87 – j5.93 2.62 + j5.21 2.58 – j1.61 21.3 53.2 208 70.0 –30 2140 3.74 – j6.26 3.31 + j5.58 2.27 – j1.61 21.4 53.3 213 67.7 –30 2170 5.24 – j6.85 4.49 + j5.93 2.03 – j1.59 21.5 53.4 220 68.5 –31 Max Drain Efficiency P3dB Gain (dB) (dBm) (W) D (%) AM/PM () 2.51 – j2.06 18.9 54.3 268 70.6 –35 3.50 + j5.81 2.45 – j1.78 19.2 54.0 250 68.6 –38 4.79 + j6.16 2.15 – j1.87 19.2 54.3 270 69.2 –37 f (MHz) Zsource () Zin () 2110 2.87 – j5.93 2.66 + j5.40 2140 3.74 – j6.26 2170 5.24 – j6.85 Zload () (2) (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload A2T21S260--12SR3 RF Device Data Freescale Semiconductor, Inc. 7 P1dB – TYPICAL LOAD PULL CONTOURS — 2140 MHz — CLASS AB 0 0 –0.5 –0.5 51 51.5 –1.5 E –2 53.5 –2.5 P –3 54.5 55 –3.5 –4 52 52.5 53 1.5 1 2 3 3.5 REAL () 4 4.5 5 IMAGINARY () IMAGINARY () 21.5 21 –2.5 20.5 P 2 54 58 56 2 2.5 3 3.5 REAL () 4 4.5 5 –34 2.5 3 REAL () –32 3.5 4 4.5 5 Figure 10. P1dB Load Pull Gain Contours (dB) NOTE: –30 –28 –1.5 E –26 –2 –24 –2.5 –4 –22 P –18 –3.5 19.5 18.5 1.5 1.5 1 –3 20 19 1 54 –1 –2 –4 56 60 –0.5 E –3.5 52 Figure 9. P1dB Load Pull Efficiency Contours (%) 22 –3 62 P 0 –1 –1.5 64 66 –2.5 –4 22.5 –0.5 E –2 –3.5 Figure 8. P1dB Load Pull Output Power Contours (dBm) 0 –1.5 –3 54 2.5 52 –1 IMAGINARY () IMAGINARY () –1 –20 1 1.5 2 2.5 3 3.5 REAL () 4 4.5 5 Figure 11. P1dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power A2T21S260--12SR3 8 RF Device Data Freescale Semiconductor, Inc. P3dB – TYPICAL LOAD PULL CONTOURS — 2140 MHz — CLASS AB 0 0 52.5 53 E –2 –3 53.5 54 54.5 P 55.5 64 62 –3 P 60 58 56 53.5 54 1.5 1 2 2.5 REAL () 0 3.5 3 –5 4 1.5 1 2 2.5 REAL () IMAGINARY () E 19 18.5 P 18 17.5 –4 2 2.5 –40 –38 –36 E –2 –34 –3 –32 –30 P –28 –26 –4 17 16.5 1.5 4 Figure 13. P3dB Load Pull Efficiency Contours (%) –1 1 3.5 20 19.5 –3 3 0 20.5 –2 54 52 –1 IMAGINARY () –2 66 68 –4 Figure 12. P3dB Load Pull Output Power Contours (dBm) –5 E 55 –4 –5 52 –1 IMAGINARY () IMAGINARY () –1 62 54 52 –24 3 3.5 4 –5 1 1.5 2 2.5 3 3.5 REAL () REAL () Figure 14. P3dB Load Pull Gain Contours (dB) Figure 15. P3dB Load Pull AM/PM Contours () NOTE: P = Maximum Output Power E = Maximum Drain Efficiency 4 Gain Drain Efficiency Linearity Output Power A2T21S260--12SR3 RF Device Data Freescale Semiconductor, Inc. 9 Table 9. Load Pull Performance — Maximum Power Tuning — Class C VDD = 28 Vdc, VGSB = 0.8 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power P1dB f (MHz) Zsource () Zin () Zload () (1) Gain (dB) (dBm) (W) D (%) AM/PM () 2110 2.40 – j4.69 2.19 + j4.95 1.11 – j3.01 15.1 55.3 341 56.8 –30 2140 3.16 – j5.17 2.83 + j5.43 1.15 – j2.88 15.3 55.3 336 56.9 –31 2170 4.24 – j5.24 3.94 + j5.93 1.13 – j2.89 15.2 55.3 338 56.5 –31 Max Output Power P3dB f (MHz) Zsource () Zin () Zload (2) () Gain (dB) (dBm) (W) D (%) AM/PM () 2110 2.40 – j4.69 2.35 + j5.22 1.33 – j3.21 13.2 55.9 393 61.8 –37 2140 3.16 – j5.17 3.15 + j5.73 1.17 – j3.05 13.1 56.0 394 58.4 –38 2170 4.24 – j5.24 4.50 + j6.23 1.15 – j3.05 13.1 56.0 396 58.9 –37 (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 10. Load Pull Performance — Maximum Drain Efficiency Tuning — Class C VDD = 28 Vdc, VGSB = 0.8 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency P1dB f (MHz) Zsource () Zin () Zload (1) () Gain (dB) (dBm) (W) D (%) AM/PM () 2110 2.40 – j4.69 1.98 + j4.94 2.73 – j2.04 16.4 53.5 223 69.7 –39 2140 3.16 – j5.17 2.59 + j5.44 2.50 – j1.84 16.4 53.4 220 68.1 –40 2170 4.24 – j5.24 3.61 + j5.98 2.33 – j1.78 16.3 53.5 226 69.0 –39 Max Drain Efficiency P3dB Gain (dB) (dBm) (W) D (%) AM/PM () 2.96 – j2.28 14.2 54.0 250 69.6 –47 2.94 + j5.73 2.73 – j1.99 14.2 53.9 247 68.1 –49 4.16 + j6.27 2.56 – j1.69 14.2 53.8 241 69.3 –50 f (MHz) Zsource () Zin () 2110 2.40 – j4.69 2.20 + j5.20 2140 3.16 – j5.17 2170 4.24 – j5.24 Zload () (2) (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload A2T21S260--12SR3 10 RF Device Data Freescale Semiconductor, Inc. P1dB – TYPICAL LOAD PULL CONTOURS — 2140 MHz — CLASS C –1 52.5 E –2 53 53.5 –2.5 55 –3.5 1.5 2.5 REAL () 3 3.5 –4 4 52 1.5 1 58 54 56 2 56 2.5 REAL () –2.5 15.5 –3.5 14 1 1.5 15 2 E –2 2.5 3 3.5 4 –40 –36 P –3 –4 –34 –32 –30 1 1.5 2 2.5 3 3.5 REAL () REAL () Figure 18. P1dB Load Pull Gain Contours (dB) Figure 19. P1dB Load Pull AM/PM Contours () NOTE: 4 –38 –3.5 15 14.5 3 –2.5 16 P –3 E IMAGINARY () –2 3.5 –44 –42 –1.5 –1.5 IMAGINARY () 62 60 –1 –1 –4 64 Figure 17. P1dB Load Pull Efficiency Contours (%) Figure 16. P1dB Load Pull Output Power Contours (dBm) 16.5 68 P –3 54 2 E 66 –3.5 54.5 1 52 –2 –2.5 P –3 –4 54 –1.5 IMAGINARY () IMAGINARY () –1.5 –1 52 51.5 52 P = Maximum Output Power E = Maximum Drain Efficiency 4 Gain Drain Efficiency Linearity Output Power A2T21S260--12SR3 RF Device Data Freescale Semiconductor, Inc. 11 P3dB – TYPICAL CARRIER LOAD PULL CONTOURS — 2140 MHz — CLASS C 0 0 –0.5 –1 52.5 –1.5 –2 E IMAGINARY () IMAGINARY () –1 53 –2.5 53.5 –3 P 55 55.5 –3.5 –4 1.5 1 2 54.5 2.5 54 –2 68 3 3.5 REAL () 4 4.5 –4 5 E 66 –2.5 64 62 P –3.5 60 52 54 56 1.5 1 58 56 58 2 2.5 3 3.5 REAL () 4 4.5 5 Figure 21. P3dB Load Pull Efficiency Contours (%) 0 0 14 –0.5 –0.5 –1 –1.5 14.5 –2 E IMAGINARY () –1 IMAGINARY () –1.5 –3 Figure 20. P3dB Load Pull Output Power Contours (dBm) 14 –2.5 13.5 –3 12.5 1 1.5 2.5 3 REAL () 3.5 –50 –2 E 4 4.5 5 Figure 22. P3dB Load Pull Gain Contours (dB) NOTE: –48 –46 –2.5 –44 P –42 –3.5 13 13 2 –52 –1.5 –3 P –3.5 –4 52 56 54 –0.5 52 –4 –38 –36 1 1.5 2 –40 2.5 3 3.5 REAL () 4 4.5 5 Figure 23. P3dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power A2T21S260--12SR3 12 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS A2T21S260--12SR3 RF Device Data Freescale Semiconductor, Inc. 13 A2T21S260--12SR3 14 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes  AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins  EB212: Using Data Sheet Impedances for RF LDMOS Devices Software  Electromigration MTTF Calculator  RF High Power Model  s2p File Development Tools  Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go to http://www.freescale.com/rf 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Aug. 2015 Description  Initial Release of Data Sheet A2T21S260--12SR3 RF Device Data Freescale Semiconductor, Inc. 15 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. E 2015 Freescale Semiconductor, Inc. A2T21S260--12SR3 Document Number: A2T21S260--12S Rev. 0, 8/2015 16 RF Device Data Freescale Semiconductor, Inc.