A2T23H300-24SR6

Freescale Semiconductor Technical Data Document Number: A2T23H300--24S Rev. 0, 6/2015 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 66 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz. 2300 MHz  Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQA = 750 mA, VGSB = 0.7 Vdc, Pout = 66 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) D (%) Output PAR (dB) 2300 MHz 14.9 46.7 7.8 –34.0 2350 MHz 15.1 46.5 7.8 –35.6 2400 MHz 15.1 46.4 7.5 –34.6 A2T23H300--24SR6 2300–2400 MHz, 66 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTOR ACPR (dBc) Features  Advanced High Performance In--Package Doherty  Greater Negative Gate--Source Voltage Range for Improved Class C Operation  Designed for Digital Predistortion Error Correction Systems NI--1230S--4L2L 6 VBWA(1) Carrier RFinA/VGSA 1 5 RFoutA/VDSA RFinB/VGSB 2 4 RFoutB/VDSB Peaking 3 VBWB(1) (Top View) Figure 1. Pin Connections 1. Device cannot operate with the VDD current supplied through pin 3 and pin 6.  Freescale Semiconductor, Inc., 2015. All rights reserved. RF Device Data Freescale Semiconductor, Inc. A2T23H300--24SR6 1 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg --65 to +150 C Case Operating Temperature Range TC --40 to +150 C TJ --40 to +225 C CW 248 1.2 W W/C Symbol Value (2,3) Unit RJC 0.25 C/W Operating Junction Temperature Range (1,2) CW Operation @ TC = 25C Derate above 25C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 72C, 66 W Avg., W--CDMA, 28 Vdc, IDQA = 750 mA, VGSB = 0.7 Vdc, 2350 MHz Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) B Charge Device Model (per JESD22--C101) IV Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 32 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 160 Adc) VGS(th) 0.8 1.2 1.6 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, IDA = 750 mAdc, Measured in Functional Test) VGS(Q) 1.4 1.8 2.2 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1.6 Adc) VDS(on) 0.1 0.2 0.3 Vdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 240 Adc) VGS(th) 0.8 1.2 1.6 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 2.4 Adc) VDS(on) 0.1 0.2 0.3 Vdc Characteristic Off Characteristics (4) On Characteristics -- Side A (Carrier) On Characteristics -- Side B (Peaking) 1. 2. 3. 4. Continuous use at maximum temperature will affect MTTF. MTTF calculator available at http://www.freescale.com/rf/calculators. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955. Each side of device measured separately. (continued) A2T23H300--24SR6 2 RF Device Data Freescale Semiconductor, Inc. Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (1,2) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 750 mA, VGSB = 0.7 Vdc, Pout = 66 W Avg., f = 2300 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Gps 14.0 14.9 17.0 dB Drain Efficiency D 43.0 46.7 — % PAR 7.2 7.8 — dB ACPR — --34.0 --31.0 dBc Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Load Mismatch (2) (In Freescale Doherty Test Fixture, 50 ohm system) IDQA = 750 mA, VGSB = 0.7 Vdc, f = 2350 MHz, 100 sec(on), 10% Duty Cycle VSWR 5:1 at 32 Vdc, 417 W Pulsed CW Output Power (3 dB Input Overdrive from 324 W Pulsed CW Rated Power) No Device Degradation Typical Performance (2) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 750 mA, VGSB = 0.7 Vdc, 2300–2400 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 275 — W (3) P3dB — 410 — W AM/PM (Maximum value measured at the P3dB compression point across the 2300–2400 MHz frequency range)  — –12.3 —  VBWres — 90 — MHz Gain Flatness in 100 MHz Bandwidth @ Pout = 66 W Avg. GF — 0.3 — dB Gain Variation over Temperature (--30C to +85C) G — 0.0075 — dB/C P1dB — 0.0075 — dB/C Pout @ 3 dB Compression Point VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Output Power Variation over Temperature (--30C to +85C) Table 5. Ordering Information Device A2T23H300--24SR6 Tape and Reel Information R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel Package NI--1230S--4L2L 1. Part internally matched both on input and output. 2. Measurements made with device in an asymmetrical Doherty configuration. 3. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF. A2T23H300--24SR6 RF Device Data Freescale Semiconductor, Inc. 3 VDDA C9 VGGA C12 C10 C1 C2 C11 R2 A2T23H300 Rev. 1 D66099 C13 C Z1 C5* C6* P C14* CUT OUT AREA C4* C3* R1 C15* R3 C8 C7 C18 C16 C17 VDDB C19 VGGB *C3, C4, C5, C6, C14 and C15 are mounted vertically. Figure 2. A2T23H300--24SR6 Test Circuit Component Layout Table 6. A2T23H300--24SR6 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C8, C10, C12, C16, C18 10 F Chip Capacitors C5750X7S2A106M230KB TDK C2, C4, C5, C7, C11, C17 8.2 pF Chip Capacitors ATC100B8R2CT500XT ATC C3 0.7 pF Chip Capacitor ATC100B0R7CT500XT ATC C6 0.8 pF Chip Capacitor ATC100B0R8CT500XT ATC C9, C19 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26 Multicomp C13 0.6 pF Chip Capacitor ATC00F0R6BT250XT ATC C14 5.6 pF Chip Capacitor ATC100B5R6CT500XT ATC C15 6.8 pF Chip Capacitor ATC100B6R8CT500XT ATC R1 50 , 10 W Termination CW12010T0050GBK ATC R2, R3 3.0 , 1/4 W Chip Resistors CRCW12063R0FKEA Vishay Z1 2300–2700 MHz Band, 90, 2 dB Hybrid Coupler X3C25P1-02S Anaren PCB Rogers RO4350B, 0.020, r = 3.66 D66099 MTL A2T23H300--24SR6 4 RF Device Data Freescale Semiconductor, Inc. 15.5 Gps, POWER GAIN (dB) 15.4 15.3 48 47.5 47 D 15.2 48.5 46.5 Gps 15.1 15 PARC 14.9 –32 –1.6 –33 –1.8 –34 14.8 –35 ACPR 14.7 14.6 2290 2305 2320 –36 2335 2350 2365 f, FREQUENCY (MHz) 2380 2395 –2 –2.2 –2.4 PARC (dB) VDD = 28 Vdc, Pout = 66 W (Avg.), IDQA = 750 mA, VGSB = 0.7 Vdc Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF ACPR (dBc) 15.6 D, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS — 2300–2400 MHz –2.6 –37 2410 IMD, INTERMODULATION DISTORTION (dBc) Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 66 Watts Avg. 0 VDD = 28 Vdc, Pout = 24 W (PEP), IDQA = 750 mA VGSB = 0.7 Vdc, Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2350 MHz –15 –30 IM3--U –45 IM3--L IM5--L IM7--L –60 IM7--U IM5--U –75 –90 1 10 300 100 TWO--TONE SPACING (MHz) Figure 4. Intermodulation Distortion Products versus Two--Tone Spacing 15 14.8 14.6 14.4 0 VDD = 28 Vdc, IDQA = 750 mA, VGSB = 0.7 Vdc f = 2350 MHz, Single--Carrier W--CDMA –1 dB = 48.25 W ACPR –1 –2 Gps –3 –4 –5 15 D 35 –3 dB = 84.8 W 55 75 Pout, OUTPUT POWER (WATTS) –30 50 –32 45 40 35 –2 dB = 65.3 W 3.84 MHz Channel Bandwidth Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 55 –34 –36 ACPR (dBc) 15.2 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) 15.4 1 D DRAIN EFFICIENCY (%) 15.6 –38 30 –40 25 115 –42 PARC 95 Figure 5. Output Peak--to--Average Ratio Compression (PARC) versus Output Power A2T23H300--24SR6 RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS — 2300–2400 MHz 15 2400 MHz 14 2350 MHz 2300 MHz Gps 2300 MHz 50 2350 MHz 2400 MHz 40 ACPR 2400 MHz 13 11 30 20 2300 MHz 2350 MHz 12 1 0 D 10 0 400 100 10 Pout, OUTPUT POWER (WATTS) AVG. –10 –20 –30 –40 ACPR (dBc) 16 Gps, POWER GAIN (dB) 60 VDD = 28 Vdc, IDQA = 750 mA, VGSB = 0.7 Vdc Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF D, DRAIN EFFICIENCY (%) 17 –50 –60 Figure 6. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 21 18 GAIN (dB) 15 Gain VDD = 28 Vdc Pin = 0 dBm IDQA = 750 mA VGSB = 0.7 Vdc 12 9 6 3 2000 2100 2200 2300 2400 2500 f, FREQUENCY (MHz) 2600 2700 2800 Figure 7. Broadband Frequency Response A2T23H300--24SR6 6 RF Device Data Freescale Semiconductor, Inc. Table 7. Carrier Side Load Pull Performance — Maximum Power Tuning VDD = 28 Vdc, IDQA = 792 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power P1dB Zsource () Zin () 2300 4.89 – j11.2 5.24 + j10.5 2350 8.32 – j12.4 7.67 + j11.4 2400 12.6 – j12.7 11.7 + j11.9 f (MHz) Zload () (1) Gain (dB) (dBm) (W) D (%) AM/PM () 1.78 – j4.54 17.8 52.5 179 56.8 –14 1.75 – j4.50 17.9 52.5 179 56.8 –14 1.68 – j4.54 18.0 52.4 175 55.9 –14 Max Output Power P3dB f (MHz) Zsource () Zin () Zload (2) () Gain (dB) (dBm) (W) D (%) AM/PM () 2300 4.89 – j11.2 5.24 + j11.4 1.72 – j4.83 15.6 53.3 213 57.0 –19 2350 8.32 – j12.4 8.12 + j12.7 1.68 – j4.82 15.6 53.2 211 56.3 –19 2400 12.6 – j12.7 13.2 + j13.5 1.65 – j4.81 15.8 53.2 208 55.8 –20 (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 8. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning VDD = 28 Vdc, IDQA = 792 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency P1dB f (MHz) Zsource () Zin () Zload (1) () Gain (dB) (dBm) (W) D (%) AM/PM () 2300 4.89 – j11.2 4.97 + j11.1 4.10 – j2.52 20.6 50.1 103 67.1 –22 2350 8.32 – j12.4 7.36 + j12.4 3.57 – j2.19 20.7 50.0 99 66.9 –24 2400 12.6 – j12.7 11.6 + j13.0 3.31 – j2.28 20.9 49.9 97 66.2 –22 Max Drain Efficiency P3dB Gain (dB) (dBm) (W) D (%) AM/PM () 3.40 – j3.40 17.9 51.7 149 66.7 –28 7.51 + j13.2 3.07 – j3.11 18.1 51.6 145 66.3 –29 12.6 + j14.5 2.64 – j3.24 18.1 51.8 152 65.7 –28 f (MHz) Zsource () Zin () 2300 4.89 – j11.2 4.88 + j11.6 2350 8.32 – j12.4 2400 12.6 – j12.7 Zload () (2) (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload A2T23H300--24SR6 RF Device Data Freescale Semiconductor, Inc. 7 Table 9. Peaking Side Load Pull Performance — Maximum Power Tuning VDD = 28 Vdc, VGSB = 1.7 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power P1dB f (MHz) Zsource () Zin () 2300 5.90 – j10.4 5.66 + j9.30 2350 10.2 – j11.1 8.59 + j9.73 2400 14.7 – j8.30 12.6 + j7.98 Zload () (1) Gain (dB) (dBm) (W) D (%) AM/PM () 1.81 – j5.44 17.1 54.7 293 53.9 –19 1.90 – j5.61 17.3 54.6 287 53.0 –20 1.98 – j5.78 17.4 54.4 277 51.8 –20 Max Output Power P3dB f (MHz) Zsource () Zin () Zload (2) () Gain (dB) (dBm) (W) D (%) AM/PM () 2300 5.90 – j10.4 5.71 + j9.97 1.70 – j5.69 14.8 55.3 342 54.6 –24 2350 10.2 – j11.1 9.18 + j10.6 1.84 – j5.84 15.0 55.3 335 53.7 –25 2400 14.7 – j8.30 14.2 + j8.34 1.98 – j6.02 15.3 55.1 326 52.8 –25 (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 10. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning VDD = 28 Vdc, VGSB = 1.7 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency P1dB f (MHz) Zsource () Zin () Zload (1) () Gain (dB) (dBm) (W) D (%) AM/PM () 2300 5.90 – j10.4 5.97 + j9.73 4.06 – j5.24 19.2 53.2 209 63.8 –25 2350 10.2 – j11.1 9.06 + j10.3 4.47 – j4.20 19.7 52.6 181 62.8 –27 2400 14.7 – j8.30 13.0 + j8.08 3.78 – j4.57 19.4 53.1 202 61.4 –24 Max Drain Efficiency P3dB Gain (dB) (dBm) (W) D (%) AM/PM () 3.98 – j5.24 17.1 53.9 246 64.5 –32 9.64 + j10.8 4.23 – j4.68 17.4 53.7 233 64.0 –34 14.7 + j8.19 3.93 – j4.31 17.6 53.7 233 63.4 –34 f (MHz) Zsource () Zin () 2300 5.90 – j10.4 5.91 + j10.3 2350 10.2 – j11.1 2400 14.7 – j8.30 Zload () (2) (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload A2T23H300--24SR6 8 RF Device Data Freescale Semiconductor, Inc. P1dB – TYPICAL CARRIER LOAD PULL CONTOURS — 2350 MHz –1 49 E –2 –3 50 50.5 –4 P 52.5 –5 –6 1 1.5 51 51.5 52 E 49.5 IMAGINARY () –2 IMAGINARY () –1 48.5 48.5 –3 64 3 2.5 3.5 4 REAL () P 4.5 5 5.5 –6 6 Figure 8. P1dB Load Pull Output Power Contours (dBm) 62 –4 –5 2 66 60 54 50 1 1.5 58 2 54 56 52 2.5 3 3.5 4 REAL () 4.5 5 5.5 6 Figure 9. P1dB Load Pull Efficiency Contours (%) –1 –1 21 –2 E IMAGINARY () IMAGINARY () –2 20.5 –3 20 –4 P 18.5 –5 17.5 –6 1 1.5 19.5 19 –28 EE –26 –3 –24 –22 –20 –18 –4 –16 PP –5 18 2 –14 2.5 3 3.5 4 REAL () 4.5 5 5.5 6 Figure 10. P1dB Load Pull Gain Contours (dB) NOTE: –6 1 1.5 2 2.5 3 3.5 4 REAL () 4.5 5 5.5 6 Figure 11. P1dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power A2T23H300--24SR6 RF Device Data Freescale Semiconductor, Inc. 9 P3dB – TYPICAL CARRIER LOAD PULL CONTOURS — 2350 MHz 0 0 49 –1 49.5 50 –2 IMAGINARY () IMAGINARY () –1 50.5 –3 EE 52.5 –4 51 51.5 52 –2 –3 –6 1 1.5 50 –5 2 2.5 3 3.5 REAL () 4 –6 5 4.5 Figure 12. P3dB Load Pull Output Power Contours (dBm) 66 –4 53 PP –5 E E 54 64 PP 52 1 1.5 58 56 2 2.5 62 60 3 3.5 REAL () 4 0 –1 –1 IMAGINARY () IMAGINARY () 19 –3 18.5 EE 18 –4 –32 –2 –30 –3 EE –6 15.5 15 1 1.5 16 2 16.5 2.5 3 3.5 REAL () –26 –24 –22 –20 PP –5 17 –28 –4 17.5 PP –5 5 Figure 13. P3dB Load Pull Efficiency Contours (%) 0 –2 4.5 –18 4 4.5 5 Figure 14. P3dB Load Pull Gain Contours (dB) NOTE: –6 1 1.5 2 2.5 3 3.5 REAL () 4 4.5 5 Figure 15. P3dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power A2T23H300--24SR6 10 RF Device Data Freescale Semiconductor, Inc. P1dB – TYPICAL PEAKING LOAD PULL CONTOURS — 2350 MHz –2 –2 48 50.5 –3 52.5 51 –4 IMAGINARY () IMAGINARY () –3 EE 54 52 53.5 –5 PP 54.5 51.5 EE –5 –6 2 1 5 4 REAL () 3 6 7 –7 8 50 56 58 3 6 5 4 REAL () 7 8 Figure 17. P1dB Load Pull Efficiency Contours (%) –2 –2 –3 –34 –32 –30 –3 IMAGINARY () 20 –4 EE –5 19.5 –28 –4 EE –6 16.5 1 PP 2 –6 18.5 17.5 17 3 5 4 REAL () 6 7 8 Figure 18. P1dB Load Pull Gain Contours (dB) NOTE: –7 1 –24 –20 –18 19 18 –26 –5 PP –7 56 52 54 2 1 62 60 PP Figure 16. P1dB Load Pull Output Power Contours (dBm) IMAGINARY () –4 53 –6 –7 46 2 –22 3 5 4 REAL () 6 7 8 Figure 19. P1dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power A2T23H300--24SR6 RF Device Data Freescale Semiconductor, Inc. 11 P3dB – TYPICAL PEAKING LOAD PULL CONTOURS — 2350 MHz –2 –2 48 –3 53.5 –4 54 54.5 –5 53 54 56 58 58 60 62 51.5 52 52.5 IMAGINARY () IMAGINARY () –3 50 52 EE –4 E E –5 55 PP –6 58 PP –6 56 –7 2 1 5 4 REAL () 3 6 7 –7 8 –2 –2 –3 –3 18 –4 EE –5 17.5 –7 1 15 2 3 5 4 REAL () 6 8 –36 EE –5 –34 PP 17 16 7 –38 –4 –6 16.5 15.5 14.5 6 5 4 REAL () –32 PP –6 3 Figure 21. P3dB Load Pull Efficiency Contours (%) IMAGINARY () IMAGINARY () Figure 20. P3dB Load Pull Output Power Contours (dBm) 2 1 7 8 Figure 22. P3dB Load Pull Gain Contours (dB) NOTE: –7 1 –26 –24 –22 2 3 –28 5 4 REAL () –30 6 7 8 Figure 23. P3dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power A2T23H300--24SR6 12 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS A2T23H300--24SR6 RF Device Data Freescale Semiconductor, Inc. 13 A2T23H300--24SR6 14 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes  AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins  EB212: Using Data Sheet Impedances for RF LDMOS Devices Software  Electromigration MTTF Calculator  RF High Power Model  .s2p File Development Tools  Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go to http://www.freescale.com/rf 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 June 2015 Description  Initial Release of Data Sheet A2T23H300--24SR6 RF Device Data Freescale Semiconductor, Inc. 15 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. 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U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. E 2015 Freescale Semiconductor, Inc. A2T23H300--24SR6 Document Number: A2T23H300--24S Rev. 0, 6/2015 16 RF Device Data Freescale Semiconductor, Inc.