A2V09H400-04SR3

NXP Semiconductors Technical Data Document Number: A2V09H400--04S Rev. 2, 02/2021 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET A2V09H400--04S This 102 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz. 900 MHz  Typical Doherty Single--Carrier W--CDMA Performance: VDD = 48 Vdc, IDQA = 750 mA, VGSB = 0.8 Vdc, Pout = 102 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) D (%) Output PAR (dB) ACPR (dBc) 920 MHz 18.7 53.5 7.2 –29.5 940 MHz 18.9 54.0 7.0 –29.2 960 MHz 18.5 53.4 6.8 –28.8 720–960 MHz, 102 W AVG., 48 V AIRFAST RF POWER LDMOS TRANSISTOR 700 MHz NI--780S--4L  Typical Doherty Single--Carrier W--CDMA Performance: VDD = 46 Vdc, IDQA = 300 mA, VGSB = 2.3 Vdc, Pout = 81 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) D (%) Output PAR (dB) P3dB (dBm) ACPR (dBc) 758 MHz 18.3 56.1 7.9 57.4 –29.7 780 MHz 18.7 55.8 8.0 57.5 –31.0 803 MHz 18.8 55.5 8.0 57.5 –33.0 Features  Advanced high performance in--package Doherty  Greater negative gate--source voltage range for improved Class C operation  Designed for digital predistortion error correction systems  2019, 2021 NXP B.V. RF Device Data NXP Semiconductors Carrier RFinA/VGSA 3 1 RFoutA/VDSA RFinB/VGSB 4 2 RFoutB/VDSB Peaking (Top View) Figure 1. Pin Connections A2V09H400--04S 1 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS –0.5, +105 Vdc Gate--Source Voltage VGS –6.0, +10 Vdc Operating Voltage VDD 55, +0 Vdc Storage Temperature Range Tstg –65 to +150 C Case Operating Temperature Range TC –40 to +150 C (1,2) TJ –40 to +225 C Characteristic Symbol Value (2,3) Unit RJC 0.51 C/W Operating Junction Temperature Range Table 2. Thermal Characteristics Thermal Resistance, Junction to Case Case Temperature 81C, 107 W Avg., W--CDMA, 48 Vdc, IDQA = 750 mA, VGSB = 0.8 Vdc, 940 MHz Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JS--001--2017) 2 Charge Device Model (per JS--002--2014) C3 Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 105 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 55 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 137 Adc) VGS(th) 1.3 1.7 2.3 Vdc Gate Quiescent Voltage (VDD = 48 Vdc, ID = 750 mAdc, Measured in Functional Test) VGSA(Q) 2.0 2.4 2.8 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1.4 Adc) VDS(on) 0.1 0.2 0.4 Vdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 211 Adc) VGS(th) 1.3 1.8 2.3 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 2.1 Adc) VDS(on) 0.1 0.2 0.5 Vdc Characteristic Off Characteristics (4) On Characteristics — Side A, Carrier On Characteristics — Side B, Peaking 1. 2. 3. 4. Continuous use at maximum temperature will affect MTTF. MTTF calculator available at http://www.nxp.com. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955. Each side of device measured separately. (continued) A2V09H400--04S 2 RF Device Data NXP Semiconductors Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Tests (1) Functional (In NXP Doherty Production Test Fixture, 50 ohm system) VDD = 48 Vdc, IDQA = 750 mA, VGSB = 0.8 Vdc, Pout = 102 W Avg., f = 920 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Gps 18.0 18.7 21.0 dB Drain Efficiency D 48.5 53.5 — % Pout @ 3 dB Compression Point, CW P3dB 55.4 56.9 — dBm Adjacent Channel Power Ratio ACPR — –29.5 –27.5 dBc Wideband Ruggedness (In NXP Doherty Production Test Fixture, 50 ohm system) IDQA = 750 mA, VGSB = 0.8 Vdc, f = 940 MHz, Additive White Gaussian Noise (AWGN) with 10 dB PAR ISBW of 400 MHz at 55 Vdc, 239 W Avg. Modulated Output Power (5 dB Input Overdrive from 107 W Avg. Modulated Output Power) No Device Degradation Typical Performance (In NXP Doherty Production Test Fixture, 50 ohm system) VDD = 48 Vdc, IDQA = 750 mA, VGSB = 0.8 Vdc, 920–960 MHz Bandwidth Pout @ 3 dB Compression Point (2) P3dB — 512 — W  — –16 —  VBWres — 80 — MHz Gain Flatness in 40 MHz Bandwidth @ Pout = 102 W Avg. GF — 0.6 — dB Gain Variation over Temperature (–40C to +85C) G — 0.031 — dB/C P1dB — 0.009 — dB/C AM/PM (Maximum value measured at the P3dB compression point across the 920–960 MHz frequency range) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Output Power Variation over Temperature (–40C to +85C) Table 5. Ordering Information Device A2V09H400--04SR3 Tape and Reel Information R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel Package NI--780S--4L 1. Part internally input matched. 2. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF. A2V09H400--04S RF Device Data NXP Semiconductors 3 VGGA C11 C1 C12 C2 C14 C3 D126606 VDDA C15 C4 R1 C13 R2 C5 C C16 Z1 C6 A2V09H400-04S Rev. 0 P C8 R3 C7 C9 cut out area C17 C19 C18 C10 C21 C20 C22 VDDB VGGB aaa--035151 Figure 2. A2V09H400--04S Test Circuit Component Layout Table 6. A2V09H400--04S Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C9, C12, C21 10 F Chip Capacitor C5750X7S2A106M230KB TDK C2, C3, C7, C10, C13, C20 47 pF Chip Capacitor 600F470JT250XT ATC C4, C8 3.3 pF Chip Capacitor 600F3R3BT250XT ATC C5 5.6 pF Chip Capacitor 600F5R6BT250XT ATC C6 6.2 pF Chip Capacitor 600F6R2BT250XT ATC C11, C22 470 F, 100 V Electrolytic Capacitor MCGPR100V477M16X32 Multicomp C14 11 pF Chip Capacitor 600F110JT250XT ATC C15 10 pF Chip Capacitor 600F100JT250XT ATC C16 12 pF Chip Capacitor 600F120JT250XT ATC C17 7.5 pF Chip Capacitor 600F7R5JT250XT ATC C18 3.9 pF Chip Capacitor 600F3R9BT250XT ATC C19 5.1 pF Chip Capacitor 600F5R1BT250XT ATC R1 50 , 10 W Termination Chip Resistor C10A50Z4 Anaren R2, R3 4.75 , 1/4 W Chip Resistor CRCW12064R75FKEA Vishay Z1 800–1000 MHz, 90, 2 dB Asymmetric Coupler CMX09Q02 RN2 Technologies PCB Rogers RO4350B, 0.020, r = 3.66 D126606 MTL A2V09H400--04S 4 RF Device Data NXP Semiconductors P3dB LOAD PULL PERFORMANCE, CARRIER — 758–821 MHz Table 7. Carrier Side Load Pull Performance — Maximum Power Tuning VDD = 48 Vdc, IDQA = 750 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power P3dB f (MHz) Zsource () Zin () 758 3.20 – j1.77 3.30 + j2.10 790 2.80 – j2.10 3.00 + j2.50 803 2.50 – j2.50 821 3.30 – j2.30 Zload () (1) Gain (dB) (dBm) D (%) AM/PM () 2.80 – j0.20 18.4 54.8 62.7 --14 2.70 – j0.30 18.5 54.7 60.8 --15 2.90 + j2.60 2.80 – j0.20 18.5 54.7 61.2 --15 2.90 + j2.80 2.40 + j0.20 18.9 54.6 60.6 --15 (1) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 8. Carrier Side Load Pull Performance — Maximum Efficiency Tuning VDD = 48 Vdc, IDQA = 750 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency P3dB f (MHz) Zsource () Zin () 758 3.20 – j1.77 3.04 + j2.10 790 2.80 – j2.10 803 2.50 – j2.50 821 3.30 – j2.30 Zload () (1) Gain (dB) (dBm) D (%) AM/PM () 2.60 + j1.70 20.2 53.9 73.3 --20 2.70 + j2.50 2.70 + j1.70 20.8 53.2 71.6 --24 2.60 + j2.60 2.50 + j2.10 21.1 53.0 72.0 --26 2.60 + j2.80 2.30 + j2.20 21.1 53.1 71.3 --24 (1) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload A2V09H400--04S RF Device Data NXP Semiconductors 5 P3dB LOAD PULL PERFORMANCE, PEAKING — 758–821 MHz Table 9. Peaking Side Load Pull Performance — Maximum Power Tuning VDD = 48 Vdc, IDQB = 1000 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power P3dB f (MHz) Zsource () Zin () 758 1.90 – j4.10 1.90 + j3.80 790 2.10 – j4.30 1.90 + j4.20 803 1.90 – j4.40 821 2.10 – j4.40 Zload () (1) Gain (dB) (dBm) D (%) AM/PM () 1.90 – j1.02 18.1 56.5 60.8 --15 2.00 – j0.70 18.5 56.3 62.2 --16 1.90 + j4.40 1.60 – j0.60 18.1 56.5 59.3 --17 2.00 + j4.70 1.70 – j0.40 18.3 56.4 59.8 --18 (1) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 10. Peaking Side Load Pull Performance — Maximum Efficiency Tuning VDD = 48 Vdc, IDQB = 1000 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency P3dB f (MHz) Zsource () Zin () 758 1.90 – j4.10 1.80 + j3.80 790 2.10 – j4.30 803 1.90 – j4.40 821 2.10 – j4.40 Zload () (1) Gain (dB) (dBm) D (%) AM/PM () 2.10 + j0.90 20.4 54.9 72.2 --22 1.73 + j4.10 2.00 + j0.41 20.2 55.2 69.3 --22 1.70 + j4.30 1.80 + j0.60 20.3 55.0 70.7 --25 1.80 + j4.50 1.60 + j0.70 20.3 55.1 69.8 --25 (1) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload A2V09H400--04S 6 RF Device Data NXP Semiconductors PACKAGE DIMENSIONS A2V09H400--04S RF Device Data NXP Semiconductors 7 A2V09H400--04S 8 RF Device Data NXP Semiconductors PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes  AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages  AN1955: Thermal Measurement Methodology of RF Power Amplifiers Software  Electromigration MTTF Calculator  .s2p File Development Tools  Printed Circuit Boards REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Sept. 2019  Initial release of data sheet 1 Jan. 2021  Added 700 MHz performance table with corresponding measured data, p. 1 2 Feb. 2021  Tables 7–10, Load Pull Performance: added Carrier Side and Peaking Side load pull performance tables showing P3dB performance across the 758–821 MHz band, pp. 5–6 A2V09H400--04S RF Device Data NXP Semiconductors 9 How to Reach Us: Home Page: nxp.com Web Support: nxp.com/support Information in this document is provided solely to enable system and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. NXP makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does NXP assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in NXP data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. NXP does not convey any license under its patent rights nor the rights of others. NXP sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/SalesTermsandConditions. NXP, the NXP logo, and Airfast are trademarks of NXP B.V. All other product or service names are the property of their respective owners. E 2019, 2021 NXP B.V. A2V09H400--04S Document Number: A2V09H400--04S Rev. 2, 02/2021 10 RF Device Data NXP Semiconductors