A3I35D012WNR1

NXP Semiconductors Technical Data Document Number: A3I35D012WN Rev. 0, 11/2018 RF LDMOS Wideband Integrated Power Amplifiers The A3I35D012WN wideband integrated circuit is designed for cellular base station applications requiring very wide instantaneous bandwidth capability. This circuit includes on--chip matching that makes it usable from 3200 to 4000 MHz. Its multi--stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats. A3I35D012WNR1 A3I35D012WGNR1 3200–4000 MHz, 1.8 W AVG., 28 V AIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS 3500 MHz  Typical Single--Carrier W--CDMA Characterization Performance: VDD = 28 Vdc, IDQ1(A+B) = 36 mA, IDQ2(A+B) = 138 mA, Pout = 1.8 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1) Frequency Gps (dB) PAE (%) ACPR (dBc) 3400 MHz 28.3 16.5 –45.2 3500 MHz 28.0 17.3 –45.1 3600 MHz 27.9 17.8 –44.8 3700 MHz 27.8 17.8 –44.5 3800 MHz 27.8 17.5 –44.7 TO--270WB--17 PLASTIC A3I35D012WNR1 TO--270WBG--17 PLASTIC A3I35D012WGNR1 Features  Designed for wide instantaneous bandwidth applications  On--chip matching (50 ohm input, DC blocked)  Integrated quiescent current temperature compensation with enable/disable function (2)  Designed for digital predistortion error correction systems  Optimized for Doherty applications 1. All data measured in fixture with device soldered to heatsink. 2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF and search for AN1977 or AN1987.  2018 NXP B.V. RF Device Data NXP Semiconductors A3I35D012WNR1 A3I35D012WGNR1 1 VDS1A VBWA RFinA VDS1A VGS2A VGS1A RFinA N.C. N.C. N.C. N.C. RFinB VGS1B VGS2B VDS1B RFout1/VDS2A VGS1A Quiescent Current Temperature Compensation (1) VGS2A VGS1B Quiescent Current Temperature Compensation (1) VGS2B RFinB RFout2/VDS2B VDS1B VBWB 17 1 2 3 4 5 6 7 8 9 10 11 12 16 (2) 15 14 13 VBWA(3) RFout1/VDS2A N.C. RFout2/VDS2B VBWB(3) (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF and search for AN1977 or AN1987. 2. Pin connections 14 and 16 are DC coupled and RF independent. 3. Device can operate with VDD current supplied through pin 13 and pin 17. Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS –0.5, +65 Vdc Gate--Source Voltage VGS –0.5, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg –65 to +150 C Case Operating Temperature Range TC –40 to +150 C Operating Junction Temperature Range (4,5) TJ –40 to +225 C Input Power Pin 26 dBm Symbol Value (5,6) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 71C, 1.8 W, 3600 MHz Stage 1, 28 Vdc, IDQ1(A+B) = 36 mA Stage 2, 28 Vdc, IDQ2(A+B) = 138 mA RJC C/W 7.7 2.9 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JS--001--2017) 1B Charge Device Model (per JS--002--2014) C2A Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C 4. Continuous use at maximum temperature will affect MTTF. 5. MTTF calculator available at http://www.nxp.com/RF/calculators. 6. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955. A3I35D012WNR1 A3I35D012WGNR1 2 RF Device Data NXP Semiconductors Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 32 Vdc, VGS = 0 Vdc) IDSS — — 5 Adc Gate--Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) IGSS — — 1 Adc Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 2 Adc) VGS(th) 1.9 2.3 2.7 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1(A+B) = 36 mAdc) VGS(Q) — 3.6 — Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ1(A+B) = 36 mAdc, Measured in Functional Test) VGG(Q) 6.0 7.2 8.0 Vdc Zero Gate Voltage Drain Leakage Current (2) (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (2) (VDS = 32 Vdc, VGS = 0 Vdc) IDSS — — 5 Adc Gate--Source Leakage Current (1) (VGS = 1.5 Vdc, VDS = 0 Vdc) IGSS — — 1 Adc Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 10 Adc) VGS(th) 1.9 2.3 2.7 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, IDQ2(A+B) = 138 mAdc) VGS(Q) — 2.8 — Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ2(A+B) = 138 mAdc, Measured in Functional Test) VGG(Q) 5.0 5.5 6.0 Vdc Drain--Source On--Voltage (2) (VGS = 10 Vdc, ID = 192 mAdc) VDS(on) 0.05 0.16 0.3 Vdc Characteristic Stage 1 -- Off Characteristics (1) Stage 1 -- On Characteristics Stage 2 -- Off Characteristics Stage 2 -- On Characteristics 1. Each side of device measured separately. 2. Side A and Side B are tied together for these measurements. (continued) A3I35D012WNR1 A3I35D012WGNR1 RF Device Data NXP Semiconductors 3 Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit (1,2,3) Functional Tests (In NXP Production Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1(A+B) = 36 mA, IDQ2(A+B) = 138 mA, Pout = 1.8 W Avg., f = 3800 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Gps 26.5 27.8 30.5 dB Power Added Efficiency PAE 16.5 17.5 — % Adjacent Channel Power Ratio ACPR — –44.7 –43.0 dBc Pout @ 3 dB Compression Point, CW P3dB 14.8 16.5 — W Load Mismatch (In NXP Production Test Fixture, 50 ohm system) IDQ1(A+B) = 36 mA, IDQ2(A+B) = 138 mA, f = 3600 MHz VSWR 10:1 at 32 Vdc, 10.7 W CW Output Power (3 dB Input Overdrive from 8.7 W CW Rated Power) No Device Degradation Typical Performance (4) (In NXP Characterization Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1(A+B) = 36 mA, IDQ2(A+B) = 138 mA, 3400–3800 MHz Bandwidth Pout @ 3 dB Compression Point (5) AM/PM (Maximum value measured at the P3dB compression point across the 3400–3800 MHz frequency range.) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) P3dB — 18.6 — W  — –11 —  VBWres — 860 — MHz — — 0.47 4.32 — — Quiescent Current Accuracy over Temperature (6) with 2.2 k Gate Feed Resistors (–40 to 85C) Stage 1 with 2.2 k Gate Feed Resistors (–40 to 85C) Stage 2 IQT Gain Flatness in 400 MHz Bandwidth @ Pout = 1.8 W Avg. GF — 0.2 — dB Gain Variation over Temperature (–40C to +85C) G — 0.04 — dB/C P1dB — 0.008 — dB/C Output Power Variation over Temperature (–40C to +85C) % Table 6. Ordering Information Device A3I35D012WNR1 A3I35D012WGNR1 Tape and Reel Information R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel Package TO--270WB--17 TO--270WBG--17 1. Second stage drains (VDD2A and VDD2B) must be tied together and powered by a single DC power supply. 2. Part internally input and output matched. 3. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GN) parts. 4. All data measured in fixture with device soldered to heatsink. 5. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF. 6. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF and search for AN1977 or AN1987. A3I35D012WNR1 A3I35D012WGNR1 4 RF Device Data NXP Semiconductors VGG2A VGG1A D99091 VDD2A R1 VDD1A R2 C7 C8 C 11 C15 C12 C17 C23 C19 C24 R5 Z1 C33 C29 C31 C32 C21 C22 Q1 Z2 C30 C25 C18 C14 Rev. 3 C1 C2 C3 C27 C20 C26 C28 C16 C13 C34 R6 C4 C5 C6 C10 C9 R4 R3 VDD1B VGG1B VDD2B VGG2B Note 1: All data measured in fixture with device soldered to heatsink. Production fixture does not include device soldered to heatsink. Note 2: Second stage drains (VDD2A and VDD2B) must be tied together and powered by a single DC power supply. aaa--032287 Figure 3. A3I35D012WNR1 Characterization Test Circuit Component Layout — 3400–3800 MHz Table 7. A3I35D012WNR1 Characterization Test Circuit Component Designations and Values — 3400–3800 MHz Part Description Part Number Manufacturer C1, C2, C3, C4, C5, C6, C7, C8, C9, C10, C11, C12, C13, C14 10 F Chip Capacitor C3225X7S1H106M250AB TDK C15, C16, C17, C18 10 nF Chip Capacitor C0805C103K5RAC Kemet C19, C20, C21, C22, C23, C24, C25, C26, C27, C28 3.3 pF Chip Capacitor ATC600S3R3BT250XT ATC C29, C30 0.3 pF Chip Capacitor ATC600S0R3BT250XT ATC C31, C32 0.4 pF Chip Capacitor ATC600S0R4BT250XT ATC C33, C34 0.2 pF Chip Capacitor ATC600S0R2BT250XT ATC Q1 RF Power LDMOS Transistor A3I35D012WN NXP R1, R2, R3, R4 2.2 k 1/8 W Chip Resistor CRCW08052K20JNEA Vishay R5, R6 50 , 8 W Termination Chip Resistor C8A50Z4B Anaren Z1, Z2 3300–3800 MHz Band, 90, 3 dB Hybrid Coupler X3C35F1-03S Anaren PCB Taconic RF35A2, 0.020, r = 3.50 D99091 MTL A3I35D012WNR1 A3I35D012WGNR1 RF Device Data NXP Semiconductors 5 PACKAGE DIMENSIONS A3I35D012WNR1 A3I35D012WGNR1 6 RF Device Data NXP Semiconductors A3I35D012WNR1 A3I35D012WGNR1 RF Device Data NXP Semiconductors 7 A3I35D012WNR1 A3I35D012WGNR1 8 RF Device Data NXP Semiconductors A3I35D012WNR1 A3I35D012WGNR1 RF Device Data NXP Semiconductors 9 A3I35D012WNR1 A3I35D012WGNR1 10 RF Device Data NXP Semiconductors A3I35D012WNR1 A3I35D012WGNR1 RF Device Data NXP Semiconductors 11 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes  AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages  AN1955: Thermal Measurement Methodology of RF Power Amplifiers  AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family  AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family Engineering Bulletins  EB212: Using Data Sheet Impedances for RF LDMOS Devices Software  Electromigration MTTF Calculator  RF High Power Model  .s2p File Development Tools  Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go to http://www.nxp.com/RF 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Nov. 2018 Description  Initial release of data sheet A3I35D012WNR1 A3I35D012WGNR1 12 RF Device Data NXP Semiconductors How to Reach Us: Home Page: nxp.com Web Support: nxp.com/support Information in this document is provided solely to enable system and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. NXP makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does NXP assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in NXP data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. NXP does not convey any license under its patent rights nor the rights of others. NXP sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/SalesTermsandConditions. NXP, the NXP logo and Airfast are trademarks of NXP B.V. All other product or service names are the property of their respective owners. E 2018 NXP B.V. A3I35D012WNR1 A3I35D012WGNR1 Document Number: RF Device Data A3I35D012WN Rev. 0,Semiconductors 11/2018 NXP 13