A3T09S100N
Airfast RF Power LDMOS Transistor
Rev. 0 — March 2021
Data Sheet: Technical Data
Designed for two--way radio applications with frequencies from 136 to
941 MHz. The high gain, ruggedness and wideband performance of this
device make it ideal for large--signal, common--source amplifier applications in
radio equipment.
A3T09S100N
Typical Single--Carrier W–CDMA Production Fixture Performance:
VDD = 28 Vdc, IDQ = 450 mA, Pout = 15 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
Frequency
(MHz)
Gps
(dB)
D
(%)
Avg. Pout
(W)
880
22.8
33.8
15
136–941 MHz, 100 W CW, 32 V
AIRFAST RF POWER LDMOS
TRANSISTOR
Typical Reference Circuit Performance: VDD = 28 Vdc, IDQ = 450 mA,
Pin = 0.125 W, CW
Frequency
(MHz)
Gps
(dB)
D
(%)
Pout
(W)
136
28.5
64.0
90
TO--270--2
PLASTIC
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal
Type
880
CW
136
CW
Pin
(W)
Test
Voltage
> 10:1
at all Phase
Angles
1.3
32
> 5:1
at all Phase
Angles
0.2
VSWR
32
Result
No Device
Degradation
Gate 2
1 Drain
No Device
Degradation
Features
Characterized for operation from 136 to 941 MHz
Unmatched input and output allowing wide frequency range utilization
Integrated ESD protection
Wideband — full power across each mobile radio band
Exceptional thermal performance
High linearity for: TETRA, SSB, LTE
Typical Applications
Output stage for VHF, UHF and 900 MHz 28 V base stations
Output stage for VHF, UHF and 900 MHz high performance mobile radios
NXP reserves the right to change the detail specifications as may be required to permit
improvements in the design of its products.
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
NXP Semiconductors
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
–0.5, +65
Vdc
Gate--Source Voltage
VGS
–6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
–65 to +150
C
TC
–40 to +150
C
Case Operating Temperature Range
Operating Junction Temperature Range
(1,2)
Total Device Dissipation @ TC = 25C
Derate above 25C
TJ
–40 to 225
C
PD
222
1.11
W
W/C
Symbol
Value (2,3)
Unit
RJC
0.90
C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80.5C, 14 W Avg., W–CDMA, 28 Vdc, IDQ = 450 mA,
880 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JS--001--2017)
Class 1C, passes 1500 V
Charge Device Model (per JS--002--2014)
Class C3, passes 1000 V
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 Adc)
VGS(th)
1.0
1.8
3.0
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 450 mAdc, Measured in Functional Test)
VGS(Q)
2.3
2.6
2.9
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 100 mAdc)
VDS(on)
—
0.02
—
Vdc
gfs
—
6.2
—
S
Off Characteristics
On Characteristics
Forward Transconductance
(VDS = 10 Vdc, ID = 7.5 Adc)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
(continued)
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet: Technical Data
2 / 20
NXP Semiconductors
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Transfer Capacitance
(VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.4
—
pF
Output Capacitance
(VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
30.9
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz)
Ciss
—
68.3
—
pF
Dynamic Characteristics
Functional Tests (In NXP Production Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, Pout = 15 W Avg., f = 880 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Power Gain
Gps
22.0
22.8
25.0
dB
Drain Efficiency
D
32.4
33.8
—
%
ACPR
—
–38.0
–33.0
dBc
IRL
—
–19
–9
dB
Adjacent Channel Power Ratio
Input Return Loss
Load Mismatch/Ruggedness — 880 MHz (In NXP Production Test Fixture, 50 ohm system) IDQ = 450 mA
Frequency
(MHz)
Signal
Type
880
CW
VSWR
Pin
(W)
> 10:1
at all Phase Angles
1.3
(3 dB Overdrive)
Test Voltage, VDD
Result
32
No Device
Degradation
Test Voltage, VDD
Result
32
No Device
Degradation
Load Mismatch/Ruggedness — 136 MHz (In NXP Reference Circuit, 50 ohm system) IDQ = 450 mA
Frequency
(MHz)
Signal
Type
136
CW
VSWR
Pin
(W)
> 5:1
at all Phase Angles
0.2
(3 dB Overdrive)
Table 6. Ordering Information
Device
A3T09S100NR1
Tape and Reel Information
R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel
Package
TO--270--2
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet: Technical Data
3 / 20
NXP Semiconductors
Typical Characteristics
200
100
Ciss
C, CAPACITANCE (pF)
Coss
10
Crss
1
Measured with 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc
0.1
0
10
20
30
40
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 2. Capacitance versus Drain--Source Voltage
9
TA = 25C
IDS, DRAIN CURRENT (AMPS)
8
VGS = 4.0 Vdc
7
3.75 Vdc
6
3.5 Vdc
5
3.25 Vdc
4
3
3.0 Vdc
2
2.75 Vdc
1
2.5 Vdc
0
0
5
10
15
20
25
30
35
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 3. Drain Current Versus Drain--Source Voltage
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet: Technical Data
4 / 20
NXP Semiconductors
Typical Characteristics (cont.)
109
MTTF (HOURS)
VDD = 28 Vdc
ID = 1.5 Amps
108
107
6 Amps
106
7 Amps
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (C)
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http://www.nxp.com.
Figure 4. MTTF versus Junction Temperature — CW
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet: Technical Data
5 / 20
NXP Semiconductors
880 MHz Production Fixture — 3 5 (7.6 cm 12.7 cm)
C19
C7
R2
VGG
R1
B1
R3
C16 VDD
B2
C8
C9
C17
C15
C6
L1
C1
C5
C3
cut
out
area
C 11
R4
C18
L2
C14
C12
C10
C13
C2
C4
A3T09S100N
Rev. 0
D134641
aaa–040962
Figure 5. A3T09S100N Production Fixture Component Layout — 880 MHz
Table 7. A3T09S100N Production Fixture Component Designations and Values — 880 MHz
Part
Description
Part Number
Manufacturer
B1
Short RF Bead
2743019447
Fair-Rite
B2
Long RF Bead
2743021447
Fair-Rite
C1, C8, C14, C15
47 pF Chip Capacitor
100B470JT500XT
ATC
C2, C4, C13
0.8–8.0 pF Variable Capacitor, Gigatrim
27291SL
Johanson
C3
3.0 pF Chip Capacitor
100B3R0JT500XT
ATC
C5, C6
15 pF Chip Capacitor
100B150JT500XT
ATC
C7, C16, C17
10 F, 35 V Tantalum Capacitor
T491D106035AT
Kemet
C9
100 F, 50 V Electrolytic Capacitor
MCGPR50V107M8X11
Multicomp
C10, C11
12 pF Chip Capacitor
100B120JT500XT
ATC
C12
4.3 pF Chip Capacitor
100B4R3JT500XT
ATC
C18
0.56 F Chip Capacitor
C1825C564J5RACTU
Kemet
C19
470 F, 63 V Electrolytic Capacitor
MCGPR63V477M13X26
Multicomp
L1, L2
12.5 nH Inductor
A04TJLC
Coilcraft
R1
1 k, 1/4 W Chip Resistor
CRCW12061001FKEA
Vishay
R2
560 k, 1/4 W Chip Resistor
CRCW12065600FKEA
Vishay
R3
12 , 1/4 W Chip Resistor
CRCW120612R0FKEA
Vishay
R4
27 , 1/4 W Chip Resistor
CRCW120627R0FKEA
Vishay
PCB
Taconic RF35, 0.030”, r = 3.5, 1 oz. Copper
D134641
MTL
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet: Technical Data
6 / 20
NXP Semiconductors
22.5
35
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
23
Gps
30
25
22
21.5
PARC
--27
0
--29
--5
--31
21
20.5
--33
IRL
20
19.5
820
--35
ACPR
840
860
880
900
920
940
--10
--15
--20
--25
--37
980
960
--1
--1.5
--2
--2.5
--3
PARC (dB)
D
40
IRL, INPUT RETURN LOSS (dB)
23.5
Gps, POWER GAIN (dB)
45
VDD = 28 Vdc, Pout = 15 W (Avg.)
IDQ = 450 mA, Single--Carrier W--CDMA
24
ACPR (dBc)
24.5
D, DRAIN
EFFICIENCY (%)
Typical Characteristics — 880 MHz Production Test Fixture
--3.5
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 6. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance
@ Pout = 15 Watts Avg.
0
VDD = 28 Vdc, Pout = 64 W (PEP)
IDQ = 450 mA, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
--15
IM3--U
--30
IM5--U IM3--L
IM5--L
--45
IM7--L
--60
--75
0.1
IM7--U
10
1
TWO--TONE SPACING (MHz)
50
22.9
0
22.8
22.7
22.6
22.5
22.4
VDD = 28 Vdc, IDQ = 450 mA, f = 880 MHz, Single--Carrier W--CDMA
D
–1 dB = 10.5 W
--15
50
--20
40
--1
–2 dB = 15.2 W
30
--2
–3 dB = 20.8 W
--3
Gps
20
ACPR
PARC
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
--4
--5
60
5
10
15
20
25
--25
--30
--35
10
--40
0
--45
30
ACPR (dBc)
1
D DRAIN EFFICIENCY (%)
23
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 7. Intermodulation Distortion Products versus Two--Tone Spacing
Pout, OUTPUT POWER (WATTS)
Figure 8. Output Peak--to--Average Ratio Compression (PARC) versus Output Power
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet: Technical Data
7 / 20
NXP Semiconductors
Typical Characteristics — 880 MHz Production Test Fixture (cont.)
VDD = 28 Vdc, IDQ = 450 mA
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Gps
23
880 MHz
10
60
0
910 MHz
880 MHz
D
910 MHz 850 MHz
850 MHz
21
45
30
910 MHz
19
ACPR
17
15
850 MHz
880 MHz
0
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
15
--20
--30
--40
--50
–15
100
10
1
--10
ACPR (dBc)
Gps, POWER GAIN (dB)
25
75
D, DRAIN EFFICIENCY (%)
27
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power
23.5
23
Gps, POWER GAIN (dB)
75
VDD = 28 Vdc, IDQ = 450 mA
f = 880 MHz, CW
60
–40_C
22
55
21.5
50
21
25_C
20.5
85_C
20
45
40
35
D
19.5
19
70
65
85_C
Gps
22.5
25_C
TC = –40_C
D, DRAIN EFFICIENCY (%)
24
30
0
20
40
60
80
100
25
120
Pout, OUTPUT POWER (WATTS)
Figure 10. Power Gain and Drain Efficiency versus CW Output Power over Temperature
5
Gain
22
0
20
–5
18
--10
16
--15
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 450 mA
14
12
700
750
800
IRL (dB)
GAIN (dB)
24
--20
IRL
850
900
950
1000
1050
--25
1100
f, FREQUENCY (MHz)
Figure 11. Broadband Frequency Response
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet: Technical Data
8 / 20
NXP Semiconductors
850–910 MHz Production Fixture
f
(MHz)
Zsource
Zload
850
0.56 + j0.44
2.23 + j0.56
880
0.62 + j0.77
2.23 + j0.83
910
0.73 + j1.21
2.20 + j1.09
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
50
Input
Matching
Network
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Zsource
50
Zload
Figure 12. Series Equivalent Source and Load Impedance – 850–910 MHz
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet: Technical Data
9 / 20
NXP Semiconductors
136 MHz Reference Circuit — 3 5 (7.6 cm 12.7 cm)
Table 8. 136 MHz Performance (In NXP Reference Circuit, 50 ohm system)
VDD = 28 Vdc, IDQ = 450 mA, Pin = 0.125 W, CW
Frequency
(MHz)
Gps
(dB)
D
(%)
Pout
(W)
136
28.5
64.0
90
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet: Technical Data
10 / 20
NXP Semiconductors
136 MHz Reference Circuit — 3 5 (7.6 cm 12.7 cm)
VGG
C14
C16
C18 C17
B1
C26
R1
C15
C28
VDD
C25 C27 C29
C30
C32
C24
C12
C23*
L2
C2 C31
L1
C1
C13
cut
out
C 11 area
C7
C6
C3 C4
C5
R2
R3
C10
C8
C22*
L3
C21*
L4
C20*
C19*
C9
A3T09S100N Rev. 0
D147587
*C19, C20, C21, C22 and C23 are mounted vertically.
aaa–040963
Figure 13. A3T09S100N Reference Circuit Component Layout — 136 MHz
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet: Technical Data
11 / 20
NXP Semiconductors
136 MHz Reference Circuit — 3 5 (7.6 cm 12.7 cm) (cont.)
Table 9. A3T09S100N Reference Circuit Component Designations and Values — 136 MHz
Part
Description
Part Number
Manufacturer
B1
30 , 6 A Ferrite Bead
MPZ2012S300A
TDK
C1
18 pF Chip Capacitor
600F180JT250XT
ATC
C2, C20, C22
36 pF Chip Capacitor
600F360JT250XT
ATC
C3
24 pF Chip Capacitor
600F240JT250XT
ATC
C4, C9
2.0 pF Chip Capacitor
600F2R0BT250XT
ATC
C5, C6, C7
8.2 pF Chip Capacitor
600F8R2BT250XT
ATC
C8, C12
1.5 pF Chip Capacitor
600F1R5BT250XT
ATC
C10
100 pF Chip Capacitor
600F101JT250XT
ATC
C11
30 pF Chip Capacitor
600F300JT250XT
ATC
C13
1.0 pF Chip Capacitor
600F1R0BT250XT
ATC
C14, C25
510 pF Chip Capacitor
100B511JT500XT
ATC
C15, C21, C26
1000 pF Chip Capacitor
100B102JT50XT
ATC
C16, C27
10 nF Chip Capacitor
C1210C103J5GACTU
Kemet
C17, C28
0.1 F Chip Capacitor
C1206C104K1RACTU
Kemet
C18
22 F, 25 V Tantalum Capacitor
TPSD226M025R0200
AVX
C19, C23
51 pF Chip Capacitor
800B510GT500XT
ATC
C24
15 pF Chip Capacitor
800B150JT500XT
ATC
C29
10 F, 100 V Electrolytic Capacitor
C5750X7S2A106M230KB
TDK
C30
330 F, 63 V Electrolytic Capacitor
MCRH63V337M13X21
Multicomp
C31
10 pF Chip Capacitor
100B100JT500XT
ATC
C32
15 pF Chip Capacitor
600F150JT250XT
ATC
L1
27 nH Inductor
1812SMS-27NJLC
Coilcraft
L2
68 nH Inductor
1812SMS-68NJLC
Coilcraft
L3
82 nH Inductor
1812SMS-82NJLC
Coilcraft
L4
12.5 nH Inductor
A04TJLC
Coilcraft
R1
12 , 1/10 W Chip Resistor
RR1220Q-120-D
Susumu
R2, R3
43 , 1/4 W Chip Resistor
CRCW120643R0FKEA
Vishay
PCB
Rogers RO4350B, 0.030, r = 3.66, 1 oz.
Copper
D147587
MTL
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet: Technical Data
12 / 20
NXP Semiconductors
Typical Characteristics — 136 MHz Reference Circuit
120
20
VDD = 28 Vdc, f = 136 MHz, CW
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
100
Pin = 0.125 W
80
60
Pin = 0.0625 W
40
20
0
15
Pin = 0.125 W
10
0.5
1
1.5
5
Pin = 0.0625 W
0
Detail A
0
2.5
2
3
VDD = 28 Vdc
f = 136 MHz, CW
0
0.5
0.25
0.75
1
1.25
1.5
VGS, GATE--SOURCE VOLTAGE (VOLTS)
3.5
Detail A
VGS, GATE--SOURCE VOLTAGE (VOLTS)
75
D
65
55
45
29.5
29
35
25
Gps
28.5
120
28
27.5
100
27
26.5
26
VDD = 28 Vdc, IDQ = 450 mA, f = 136 MHz, CW 20
0
0.25
0.1
0.15
0.2
25.5
25
80
60
40
Pout
0.05
0
Pout, OUTPUT
POWER (WATTS)
Gps, POWER GAIN (dB)
31
30.5
30
D, DRAIN
EFFICIENCY (%)
Figure 14. Output Power versus Gate--Source Voltage
Pin, INPUT POWER (WATTS)
80
31
–40_C
30.5
85_C
25_C
29.5
TC = –40_C
40
0
28.5
125
28
100
Pout
27.5
75
–40_C
27
25_C
50
85_C
26.5
26
60
20
Gps
85_C
29
25_C
VDD = 28 Vdc, IDQ = 450 mA, f = 136 MHz, CW
0
0.05
0.1
0.15
0.2
25
Pout, OUTPUT
POWER (WATTS)
Gps, POWER GAIN (dB)
30
D
D, DRAIN
EFFICIENCY (%)
Figure 15. Power Gain, Output Power and Drain Efficiency versus Input Power
0
0.25
Pin, INPUT POWER (WATTS)
Figure 16. Power Gain, Output Power and Drain Efficiency versus Input Power over Temperature
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet: Technical Data
13 / 20
NXP Semiconductors
136 MHz Reference Circuit
f
(MHz)
Zsource
Zload
136
7.22 + j13.0
3.87 + j0.32
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
50
Input
Matching
Network
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Zsource
50
Zload
Figure 17. Series Equivalent Source and Load Impedance – 136 MHz
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet: Technical Data
14 / 20
NXP Semiconductors
A3T09S100
AWLYWWZ
Figure 18. Product Marking
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet: Technical Data
15 / 20
NXP Semiconductors
Package Information
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet: Technical Data
16 / 20
NXP Semiconductors
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet: Technical Data
17 / 20
NXP Semiconductors
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet: Technical Data
18 / 20
NXP Semiconductors
Product Documentation, Software and Tools
Refer to the following documents, software and tools to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
Revision History
The following table summarizes revisions to this document.
Revision
Date
0
Mar. 2021
Description
Initial release of data sheet
A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet: Technical Data
19 / 20
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A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021
Data Sheet: Technical Data
Date of release: March 2021
20 / 20
Document identifier: A3T09S100N
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