A3V09H521-24SR6

NXP Semiconductors Technical Data Document Number: A3V09H521--24S Rev. 0, 02/2019 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET A3V09H521--24SR6 This 107 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz. 900 MHz  Typical Doherty Single--Carrier W--CDMA Performance: VDD = 48 Vdc, IDQA = 800 mA, VGSB = 0.7 Vdc, Pout = 107 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) D (%) Output PAR (dB) ACPR (dBc) 920 MHz 18.6 53.6 7.6 –31.1 940 MHz 18.6 53.2 7.8 –33.3 960 MHz 18.5 53.5 7.9 –34.7 720–960 MHz, 107 W AVG., 48 V AIRFAST RF POWER LDMOS TRANSISTOR Features  Advanced high performance in--package Doherty NI--1230S--4L2L  Greater negative gate--source voltage range for improved Class C operation  Designed for digital predistortion error correction systems 6 VBWA(1) Carrier RFinA/VGSA 1 5 RFoutA/VDSA RFinB/VGSB 2 4 RFoutB/VDSB Peaking 3 VBWB(1) (Top View) Figure 1. Pin Connections 1. Device cannot operate with VDD current supplied through pin 3 and pin 6.  2019 NXP B.V. RF Device Data NXP Semiconductors A3V09H521--24SR6 1 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS –0.5, +100 Vdc Gate--Source Voltage VGS –6.0, +10 Vdc Operating Voltage VDD 55, +0 Vdc Storage Temperature Range Tstg –65 to +150 C Case Operating Temperature Range TC –40 to +150 C (1,2) TJ –40 to +225 C Characteristic Symbol Value (2,3) Unit RJC 0.37 C/W Operating Junction Temperature Range Table 2. Thermal Characteristics Thermal Resistance, Junction to Case Case Temperature 74C, 107 W Avg., W--CDMA, 48 Vdc, IDQA = 800 mA, VGSB = 0.7 Vdc, 940 MHz Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JS--001--2017) 2 Charge Device Model (per JS--002--2014) C3 Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 55 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 137 Adc) VGS(th) 1.3 1.8 2.3 Vdc Gate Quiescent Voltage (VDD = 48 Vdc, IDA = 800 mAdc, Measured in Functional Test) VGSA(Q) 2.0 2.5 2.8 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1.37 Adc) VDS(on) 0.1 0.3 0.5 Vdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 274 Adc) VGS(th) 1.3 1.8 2.3 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 2.74 Adc) VDS(on) 0.1 0.3 0.5 Vdc Characteristic Off Characteristics (4) On Characteristics — Side A, Carrier On Characteristics — Side B, Peaking 1. 2. 3. 4. Continuous use at maximum temperature will affect MTTF. MTTF calculator available at http://www.nxp.com/RF/calculators. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955. Each side of device measured separately. (continued) A3V09H521--24SR6 2 RF Device Data NXP Semiconductors Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Tests (1,2) Functional (In NXP Doherty Test Fixture, 50 ohm system) VDD = 48 Vdc, IDQA = 800 mA, VGSB = 0.7 Vdc, Pout = 107 W Avg., f = 960 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Gps 17.6 18.5 20.6 dB Drain Efficiency D 51.0 53.5 — % PAR 7.4 7.9 — dB ACPR — –34.7 –31.0 dBc Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Load Mismatch (2) (In NXP Doherty Test Fixture, 50 ohm system) IDQA = 800 mA, VGSB = 0.7 Vdc, f = 940 MHz, 12 sec(on), 10% Duty Cycle VSWR 10:1 at 55 Vdc, 776 W Pulsed CW Output Power (3 dB Input Overdrive from 568 W Pulsed CW Rated Power) No Device Degradation Typical Performance (2) (In NXP Doherty Test Fixture, 50 ohm system) VDD = 48 Vdc, IDQA = 800 mA, VGSB = 0.7 Vdc, 920–960 MHz Bandwidth Pout @ 3 dB Compression Point (3) P3dB — 661 — W  — –21 —  VBWres — 80 — MHz Gain Flatness in 40 MHz Bandwidth @ Pout = 107 W Avg. GF — 0.1 — dB Gain Variation over Temperature (–40C to +85C) G — 0.01 — dB/C P1dB — 0.003 — dB/C AM/PM (Maximum value measured at the P3dB compression point across the 920–960 MHz frequency range) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Output Power Variation over Temperature (–40C to +85C) Table 5. Ordering Information Device A3V09H521--24SR6 Tape and Reel Information R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel Package NI--1230S--4L2L 1. Part internally matched both on input and output. 2. Measurement made with device in an asymmetrical Doherty configuration. 3. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF. A3V09H521--24SR6 RF Device Data NXP Semiconductors 3 C12 VGGA VDDA C14 C1 C13 C2 R2 D119008 C16 C4 C3 R1 A3V09H521-24S Rev. 0 C32 C29 C30 C20 C22* cut out area C9 C6 C21 P C8 C7 C18 C19 C C5 Z1 C17 C15 C31 C23 C33 R3 C10 C24 C25* C26 C 11 C27 VGGB C28 VDDB *C22 and C25 are mounted vertically. aaa--033075 Figure 2. A3V09H521--24SR6 Test Circuit Component Layout Table 6. A3V09H521--24SR6 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C11, C13, C14, C16, C24, C26, C27 10 F Chip Capacitor C5750X7S2A106M230KB TDK C2, C5, C8, C10, C15, C18, C19 39 pF Chip Capacitor ATC600F390JT250XT ATC C3, C30 3.3 pF Chip Capacitor ATC600F3R3BT250XT ATC C4, C9 8.2 pF Chip Capacitor ATC600F8R2BT250XT ATC C6 2.7 pF Chip Capacitor ATC600F2R7BT250XT ATC C7 5.6 pF Chip Capacitor ATC600F5R6BT250XT ATC C12, C28 470 F, 100 V Electrolytic Capacitor MCGPR100V477M16X32 Multicomp C17, C32 3.0 pF Chip Capacitor ATC600F3R0BT250XT ATC C20, C23 4.7 pF Chip Capacitor ATC600F4R7BT250XT ATC C21 4.3 pF Chip Capacitor ATC600F4R3BT250XT ATC C22 22 pF Chip Capacitor ATC100B220JT500XT ATC C25 39 pF Chip Capacitor ATC100B390JT500XT ATC C29 1.2 pF Chip Capacitor ATC600F1R2BT250XT ATC C31 1.5 pF Chip Capacitor ATC600F1R5BT250XT ATC C33 110 pF Chip Capacitor ATC100B111JT300XT ATC R1 50 , 4 W Chip Resistor CW12010T0050GBK ATC R2, R3 6.8 , 1/4 W Chip Resistor CRCW12066R80FKEA Vishay Z1 800–1000 MHz, 90, 2 dB Asymmetric Coupler CMX09Q02 RN2 Technologies PCB RO4350B, 0.020, r = 3.66 D119008 MTL A3V09H521--24SR6 4 RF Device Data NXP Semiconductors PACKAGE DIMENSIONS A3V09H521--24SR6 RF Device Data NXP Semiconductors 5 A3V09H521--24SR6 6 RF Device Data NXP Semiconductors PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes  AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages  AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins  EB212: Using Data Sheet Impedances for RF LDMOS Devices Software  Electromigration MTTF Calculator  .s2p File Development Tools  Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go to http://www.nxp.com/RF 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Feb. 2019 Description  Initial release of data sheet A3V09H521--24SR6 RF Device Data NXP Semiconductors 7 How to Reach Us: Home Page: nxp.com Web Support: nxp.com/support Information in this document is provided solely to enable system and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. NXP makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does NXP assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in NXP data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. NXP does not convey any license under its patent rights nor the rights of others. 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