I2P
AK
ACTT6G-800E
AC Thyristor Triac power switch
Rev. 2 — 12 June 2012
Product data sheet
1. Product profile
1.1 General description
AC Thyristor Triac power switch in a SOT226A (I2PAK) plastic package with
self-protective clamping capabilities against low and high energy transients.
1.2 Features and benefits
Clamping structure ensuring safe high
over-voltage withstand capability
Protective self turn-on capability for
high energy transients
Direct interfacing with low power
drivers and microcontrollers
Safe clamping capability for low
energy over-voltage transients
Full cycle AC conduction
Sensitive gate for easy logic level
triggering
Over-voltage withstand capability to
IEC 61000-4-5
Pin compatible with standard triacs
Planar passivated for voltage
ruggedness and reliability
Triggering in three quadrants only
Very high immunity to false turn-on by
dV/dt
1.3 Applications
AC fan, pump and compressor
controls
Large and small appliances (White
Goods)
Highly inductive, resistive and safety
loads
Reversing induction motor controls
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
VDRM
repetitive peak off-state
voltage
ITSM
non-repetitive peak
on-state current
Tj
junction temperature
IT(RMS)
RMS on-state current
VPP
peak pulse voltage
Conditions
Min
Typ
Max
Unit
-
-
800
V
-
-
51
A
-
-
125
°C
full sine wave; Tmb ≤ 108 °C;
see Figure 1; see Figure 2; see Figure 4
-
-
6
A
Tj = 25 °C; non-repetitive, off-state;
see Figure 3
-
-
2
kV
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; see Figure 5; see Figure 6
ACTT6G-800E
NXP Semiconductors
AC Thyristor Triac power switch
Table 1.
Quick reference data …continued
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VD = 12 V; IT = 100 mA; LD+ G+;
Tj = 25 °C; see Figure 8
-
-
10
mA
VD = 12 V; IT = 100 mA; LD+ G-;
Tj = 25 °C; see Figure 8
-
-
10
mA
VD = 12 V; IT = 100 mA; LD- G-;
Tj = 25 °C; see Figure 8
-
-
10
mA
ICL = 0.1 mA; tp = 1 ms; Tj = 25 °C
850
-
-
V
Static characteristics
gate trigger current
IGT
clamping voltage
VCL
Dynamic charateristics
dVD/dt
rate of rise of off-state
voltage
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit; see Figure 13
500
-
-
V/µs
dIcom/dt
rate of change of
commutating current
VD = 400 V; Tj = 125 °C; IT(RMS) = 6 A;
dVcom/dt = 1 V/µs; gate open circuit;
see Figure 14; see Figure 15
10
-
-
A/ms
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
CM
common
2
LD
load
3
G
gate
mb
LD
mounting base; load
Simplified outline
Graphic symbol
LD
G
CM
003aaf296
1
2
3
SOT226A (I2PAK)
3. Ordering information
Table 3.
Ordering information
Type number
ACTT6G-800E
ACTT6G-800E
Product data sheet
Package
Name
Description
Version
I2PAK
plastic single-ended package (I2PAK); TO-262
SOT226A
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Rev. 2 — 12 June 2012
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AC Thyristor Triac power switch
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state voltage
IT(RMS)
RMS on-state current
ITSM
non-repetitive peak on-state
current
Min
Max
Unit
-
800
V
full sine wave; Tmb ≤ 108 °C;
see Figure 1; see Figure 2; see Figure 4
-
6
A
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
-
56
A
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; see Figure 5; see Figure 6
-
51
A
I2t
I2t for fusing
tp = 10 ms; sine-wave pulse
-
13
A2s
dIT/dt
rate of rise of on-state current
IT = 9 A; IG = 0.2 A; dIG/dt = 0.2 A/µs
-
100
A/µs
IGM
peak gate current
t = 20 μs
-
2
A
PGM
peak gate power
-
5
W
PG(AV)
average gate power
-
0.5
W
Tstg
storage temperature
-40
150
°C
Tj
junction temperature
-
125
°C
VPP
peak pulse voltage
-
2
kV
over any 20 ms period
Tj = 25 °C; non-repetitive, off-state;
see Figure 3
003aag775
8
IT(RMS)
(A)
003aag777
18
IT(RMS)
(A)
15
108 °C
6
12
4
9
6
2
3
0
-50
0
50
100
0
10-2
150
Tmb (°C)
Fig 1.
RMS on-state current as a function of mounting
base temperature; maximum values
ACTT6G-800E
Product data sheet
Fig 2.
10-1
1
10
surge duration (s)
RMS on-state current as a function of surge
duration; maximum values
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Rev. 2 — 12 June 2012
© NXP B.V. 2012. All rights reserved.
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ACTT6G-800E
NXP Semiconductors
AC Thyristor Triac power switch
IEC 61000-4-5 Standards
Surge Generator
Open Circuit Voltage
1.2 ms/50 ms waveform
RGen
2W
R
L
150 W
5 mH
Load Model
Surge pulse
RG
DUT
220 W
003aag778
Fig 3.
Test circuit for inductive and resistive loads with conditions equivalent to IEC 61000-4-5
003aag780
10
Ptot
(W)
8
6
conduction
angle
(degrees)
form
factor
a
30
60
90
120
180
4
2.8
2.2
1.9
1.57
α = 180°
α
105
120°
T
107 mb(max)
(°C)
109
90°
111
60°
113
30°
115
117
4
119
121
2
123
125
7.5
0
0
1.5
3
4.5
6
IT(RMS) (A)
Fig 4.
Total power dissipation as a function of RMS on-state current; maximum values
ACTT6G-800E
Product data sheet
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Rev. 2 — 12 June 2012
© NXP B.V. 2012. All rights reserved.
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ACTT6G-800E
NXP Semiconductors
AC Thyristor Triac power switch
003aag781
60
ITSM
(A)
45
30
ITSM
IT
15
t
T
Tj(init) = 25 °C max
0
1
102
10
103
number of cycles
Fig 5.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
003aag782
103
ITSM
IT
t
ITSM
(A)
tp
Tj(init) = 25 °C max
(1)
102
10
10-2
10-1
1
102
10
tp (ms)
Fig 6.
Non-repetitive peak on-state current as a function of pulse width; maximum values
ACTT6G-800E
Product data sheet
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Rev. 2 — 12 June 2012
© NXP B.V. 2012. All rights reserved.
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AC Thyristor Triac power switch
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance from
junction to mounting base
half cycle; see Figure 7
-
-
2.4
K/W
full cycle; see Figure 7
-
-
2
K/W
in free air
-
60
-
K/W
thermal resistance from
junction to ambient
Rth(j-a)
003aag784
10
Zth(j-mb)
(K/W)
(2)
1
(1)
10-1
10-2
10-5
10-4
10-3
10-2
10-1
1
10
tp (s)
(1) Bidirectional (full cycle)
(2) Unidirectional (half cycle)
Fig 7.
Transient thermal impedance from junction to mounting base as a function of pulse width
ACTT6G-800E
Product data sheet
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Rev. 2 — 12 June 2012
© NXP B.V. 2012. All rights reserved.
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AC Thyristor Triac power switch
6. Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VD = 12 V; IT = 100 mA; LD+ G+;
Tj = 25 °C; see Figure 8
-
-
10
mA
VD = 12 V; IT = 100 mA; LD+ G-;
Tj = 25 °C; see Figure 8
-
-
10
mA
VD = 12 V; IT = 100 mA; LD- G-;
Tj = 25 °C; see Figure 8
-
-
10
mA
VD = 12 V; IG = 100 mA; LD+ G+;
Tj = 25 °C; see Figure 9
-
-
40
mA
VD = 12 V; IG = 100 mA; LD+ G-;
Tj = 25 °C; see Figure 9
-
-
30
mA
VD = 12 V; IG = 100 mA; LD- G-;
Tj = 25 °C; see Figure 9
-
-
30
mA
25
mA
Static characteristics
IGT
IL
gate trigger current
latching current
IH
holding current
VD = 12 V; Tj = 25 °C; see Figure 10
-
-
VT
on-state voltage
IT = 8 A; Tj = 25 °C; see Figure 11
-
-
1.7
V
VGT
gate trigger voltage
VD = 12 V; IT = 100 mA; Tj = 25 °C;
see Figure 12
-
0.8
1.5
V
VD = 400 V; IT = 100 mA; Tj = 125 °C;
see Figure 12
0.2
0.45
-
V
VD = 800 V; Tj = 25 °C
-
-
10
µA
VD = 800 V; Tj = 125 °C
-
-
0.5
mA
ICL = 0.1 mA; tp = 1 ms; Tj = 25 °C
850
-
-
V
ID
VCL
off-state current
clamping voltage
Dynamic charateristics
dVD/dt
rate of rise of off-state
voltage
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit; see Figure 13
500
-
-
V/µs
dIcom/dt
rate of change of
commutating current
VD = 400 V; Tj = 125 °C; IT(RMS) = 6 A;
dVcom/dt = 20 V/µs; (snubberless
condition); gate open circuit;
see Figure 14; see Figure 15
3.5
-
-
A/ms
VD = 400 V; Tj = 125 °C; IT(RMS) = 6 A;
dVcom/dt = 10 V/µs; gate open circuit;
see Figure 14; see Figure 15
5
-
-
A/ms
VD = 400 V; Tj = 125 °C; IT(RMS) = 6 A;
dVcom/dt = 1 V/µs; gate open circuit;
see Figure 14; see Figure 15
10
-
-
A/ms
ACTT6G-800E
Product data sheet
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Rev. 2 — 12 June 2012
© NXP B.V. 2012. All rights reserved.
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ACTT6G-800E
NXP Semiconductors
AC Thyristor Triac power switch
003aag785
3
(1)
IGT
003aag786
3
IL
IL(25°C)
IGT(25°C)
(2)
2
2
(3)
1
1
0
-50
0
50
100
0
-50
150
0
50
100
Tj (°C)
Tj (°C)
150
(1) LD- G(2) LD+ G+
(3) LD+ GFig 8.
Normalized gate trigger current as a function of
junction temperature
003aag787
3
Fig 9.
Normalized latching current as a function of
junction temperature
003aag788
20
IT
(A)
IH
16
IH(25°C)
2
12
8
1
4
0
-50
(1)
(2)
(3)
0
0
50
100
150
0
1
2
3
Tj (°C)
VT (V)
Vo = 1.109 V; Rs = 0.076 Ω
(1) Tj = 125 °C; typical values
(2) Tj = 125 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig 10. Normalized holding current as a function of
junction temperature
ACTT6G-800E
Product data sheet
Fig 11. On-state current as a function of on-state
voltage
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ACTT6G-800E
NXP Semiconductors
AC Thyristor Triac power switch
003aag677
1.6
VGT
A
B
VGT(25°C)
1.2
4
0.8
2
0.4
-50
003aag789
6
0
0
50
100
150
25
50
75
100
Tj (°C)
125
Tj (°C)
A is dVD/dt at condition Tj °C
B is dVD/dt at condition Tj 125 °C
Fig 12. Normalized gate trigger voltage as a function of
junction temperature
003aag790
12
Fig 13. Normalized rate of rise of off-state voltage as a
function of junction temperature
003aag791
40
A [B]
A [spec]
A
B
30
8
20
4
10
0
25
50
75
100
125
0
10-1
1
102
10
B (V/μs)
Tj (°C)
A is dIcom/dt at condition Tj °C
A[B] is dIcom/dt at condition B, dVcom/dt
B is dIcom/dt at condition Tj 125 °C
A[spec] is the specified data sheet value of dIcom/dt
VD = 400 V
turn-off time < 20 ms
Fig 14. Normalized critical rate of rise of commutating
current as a function of junction temperature
ACTT6G-800E
Product data sheet
Fig 15. Normalized critical rate of change of
commutating current as a function of critical
rate of change of commutating voltage;
minimum values
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AC Thyristor Triac power switch
7. Package outline
Plastic single-ended package (I2PAK); low-profile 3-lead TO-262
SOT226A
A
A1
E
D1
D
L1
b1
Q
b2
L
1
2
3
c
b
e
e
0
5
Dimensions
Unit
max
nom
min
mm
10 mm
scale
A
A1
b
b1
b2
c
D
D1
E
e
4.7
1.40 0.95 1.40
1.7
0.65
9.4
1.32 10.30
4.3
1.15 0.70 1.14
1.3
0.45
8.6
1.02 9.65
2.54
(REF)
L
15.0
12.5
L1
3.0
(REF)
Q
2.6
2.2
sot226a_po
Outline
version
SOT226A
References
IEC
JEDEC
JEITA
European
projection
Issue date
09-08-17
09-08-25
TO-262
Fig 16. Package outline SOT226A (I2PAK)
ACTT6G-800E
Product data sheet
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Rev. 2 — 12 June 2012
© NXP B.V. 2012. All rights reserved.
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AC Thyristor Triac power switch
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
ACTT6G-800E v.2
20120612
Product data sheet
-
ACTT6G-800E v.1
-
-
Modifications:
ACTT6G-800E v.1
ACTT6G-800E
Product data sheet
•
Various changes to content.
20111101
Product data sheet
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Rev. 2 — 12 June 2012
© NXP B.V. 2012. All rights reserved.
11 of 14
ACTT6G-800E
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AC Thyristor Triac power switch
9. Legal information
9.1
Data sheet status
Document status[1] [2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URLhttp://www.nxp.com.
9.2
Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
9.3
Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with theTerms and conditions of commercial sale of NXP Semiconductors.
ACTT6G-800E
Product data sheet
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 June 2012
© NXP B.V. 2012. All rights reserved.
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Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published athttp://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
9.4
Trademarks
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G
reenChip,HiPerSmart,HITAG,I²C-bus
logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE
Ultralight,MoReUse,QLPAK,Silicon
Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia
andUCODE — are trademarks of NXP B.V.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
HD Radio andHD Radio logo — are trademarks of iBiquity Digital
Corporation.
10. Contact information
For more information, please visit:http://www.nxp.com
For sales office addresses, please send an email to:salesaddresses@nxp.com
ACTT6G-800E
Product data sheet
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Rev. 2 — 12 June 2012
© NXP B.V. 2012. All rights reserved.
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ACTT6G-800E
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AC Thyristor Triac power switch
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .6
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Contact information. . . . . . . . . . . . . . . . . . . . . .13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 12 June 2012
Document identifier: ACTT6G-800E