AFIC901NT1

Freescale Semiconductor Technical Data Document Number: AFIC901N Rev. 0, 1/2016 RF LDMOS Wideband Integrated Power Amplifier The AFIC901N is a 2--stage, high gain amplifier designed to provide a high level of flexibility to the amplifier designer. The device is unmatched even at the interstage, allowing performance to be optimized for any frequency in the 1.8 to 1000 MHz range. The high gain, ruggedness and wideband performance of this device make it ideal for use as a pre-- driver and driver in a wide range of industrial, medical and communications applications. AFIC901N 1.8–1000 MHz, 30 dBm, 7.5 V AIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER Typical Narrowband Performance (7.5 Vdc, TA = 25C, CW) Frequency (MHz) Gps (dB) D (%) Pout (dBm) 520 (1) 32.2 73.0 31.2 Typical Wideband Performance (7.5 Vdc, TA = 25C, CW) Pin (dBm) Gps (dB) D (%) Pout (dBm) 136–174 (2,5) 0 30.6 62.1 30.6 (3,5) 3 27.4 61.5 30.4 760–870 (4,5) 3 27.6 57.0 30.6 350–520 QFN 4  4 Gate A Gate A N.C. N.C. Drain A Drain A Frequency (MHz) Load Mismatch/Ruggedness Signal Type VSWR 175 (2) CW > 25:1 at all Phase Angles 520 (3) 1. 2. 3. 4. 5. Pin (W) Test Voltage 3 dB Overdrive from rated power 9 24 23 22 21 20 19 Result No Device Degradation Measured in 520 MHz narrowband test circuit. Measured in 136–174 MHz VHF broadband reference circuit. Measured in 350–520 MHz UHF broadband reference circuit. Measured in 760–870 MHz broadband reference circuit. The values shown are the center band performance numbers across the indicated frequency range. Features  Characterized for Operation from 1.8 to 1000 MHz  Unmatched Input, Interstage and Output Allowing Wide Frequency Range Utilization  Integrated ESD Protection  Same PCB Layout Can be Used for 136--174 MHz, 350--520 MHz and 760–870 MHz Designs.  24--pin, 4 mm QFN Plastic Package Typical Applications  Driver for Mobile Radio Power Amplifiers  Output Stage for Low Power Handheld Radios  Driver for Communications and Industrial Systems  Freescale Semiconductor, Inc., 2016. All rights reserved. RF Device Data Freescale Semiconductor, Inc. 18 GND GND 1 Stage 1 GND N.C. Drain B Drain B 2 3 4 5 Drain B 6 17 16 15 14 13 Stage 2 GND N.C. Gate B Gate B Gate B 7 8 9 10 11 12 N.C. N.C. N.C. N.C. N.C. N.C. Frequency (MHz) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Pin Connections Stage 1 Stage 2 RFin RFout External Interstage Match Figure 2. Typical Application AFIC901N 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS –0.5, +30 Vdc Gate--Source Voltage VGS –6.0, +12 Vdc Storage Temperature Range Tstg –65 to +150 C Case Operating Temperature Range TC –40 to +150 C Operating Junction Temperature Range (1,2) TJ –40 to +150 C Symbol Value (2,3) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 78C, 30 dBm CW, 520 MHz Stage 1, 7.5 Vdc, IDQ1 = 8 mA Stage 2, 7.5 Vdc, IDQ2 = 24 mA RJC C/W 32 9.4 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1A, passes 250 V Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) II, passes 200 V Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.nxp.com/RF/calculators. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955. AFIC901N 2 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit IDSS — — 1 Adc V(BR)DSS 30 37 — Vdc IGSS — — 500 nAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 6 Adc) VGS(th) 1.8 2.2 2.6 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 46 mAdc) VDS(on) — 0.24 — Vdc Forward Transconductance (VDS = 7.5 Vdc, ID = 0.1 Adc) gfs — 0.096 — S IDSS — — 1 Adc V(BR)DSS 30 37 — Vdc IGSS — — 500 nAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 25 Adc) VGS(th) 1.7 2.1 2.5 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 380 mAdc) VDS(on) — 0.23 — Vdc gfs — 1.1 — S Characteristic Stage 1 -- Off Characteristics (1) Zero Gate Voltage Drain Leakage Current (VDS = 30 Vdc, VGS = 0 Vdc) Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 1 Adc) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Stage 1 -- On Characteristics (1) Stage 2 -- Off Characteristics (1) Zero Gate Voltage Drain Leakage Current (VDS = 30 Vdc, VGS = 0 Vdc) Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 1 Adc) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Stage 2 -- On Characteristics (1) Forward Transconductance (VDS = 7.5 Vdc, ID = 1.1 Adc) Functional Tests (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 7.5 Vdc, IDQ1 = 8 mA, IDQ2 = 24 mA, Pin = –1 dBm, f = 520 MHz Output Power Pout — 31.2 — dBm Power Gain Gps — 32.2 — dB Drain Efficiency D — 73.0 — % Table 6. Ordering Information Device AFIC901NT1 Tape and Reel Information T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel Package QFN 4  4 1. Each side of device measured separately. AFIC901N RF Device Data Freescale Semiconductor, Inc. 3 136–174 MHz VHF BROADBAND REFERENCE CIRCUIT Table 7. 136–174 MHz VHF Broadband Performance (In Freescale Reference Circuit, 50 ohm system) VDD = 7.5 Vdc, IDQ1 = 10 mA, IDQ2 = 30 mA Frequency (MHz) Pin (dBm) Gps (dB) D (%) Pout (dBm) 135 –0.8 30.8 65.9 30.0 155 –1.3 31.3 59.6 30.0 175 –1.1 31.1 61.4 30.0 Table 8. Load Mismatch/Ruggedness (In Freescale 136–174 MHz Reference Circuit, 50 ohm system) IDQ1 = 10 mA, IDQ2 = 30 mA Frequency (MHz) Signal Type VSWR Pin (W) 175 CW > 25:1 at all Phase Angles 3 dB Overdrive from rated power Test Voltage, VDD Result 9 No Device Degradation AFIC901N 4 RF Device Data Freescale Semiconductor, Inc. 136–174 MHz VHF BROADBAND REFERENCE CIRCUIT — 0.83  1.86 (2.11 cm  4.72 cm) J1 R1 C1 C3 C4 C9 R9 R8 C11 C12 C15 C10 R4 L2 P2 R6 L4 R2 L1 C17 L3 P1 C5 C6 C2 R7 VG2 C13 C14 C8 R3 C7 R5 D75372 VG1 B1 Q1 L5 R10 L6 C16 Rev. 0 Figure 3. AFIC901N VHF Broadband Reference Circuit Component Layout — 136–174 MHz Table 9. AFIC901N VHF Broadband Reference Circuit Component Designations and Values — 136–174 MHz Part Description Part Number Manufacturer B1 RF Bead 2508051107Y0 Fair-Rite C1, C5, C9, C12, C14, C17 1000 pF Chip Capacitors C2012X7R2E102M085AA TDK C2, C16 15 pF Chip Capacitors GQM2195C2E150FB12D Murata C3 1 F Chip Capacitor GRM21BR71H105KA12L Murata C4, C6, C7, C8, C11, C13 100 pF Chip Capacitors GQM2195C2E101GB12D Murata C10 6.2 pF Chip Capacitor GQM2195C2E6R2BB12D Murata C15 10 F Chip Capacitor GRM31CR61H106KA12L Murata J1 Right-Angle Breakaway Headers (3 Pins) 22-28-8360 Molex L1, L4 56 nH Inductors LL1608-FSL56NJ TOKO L2 180 nH Inductor LL1608-FSLR18J TOKO L3 120 nH Inductor LL1608-FSLR12J TOKO L5 180 nH Inductor 1008CS-181XJLB Coilcraft L6 15.7 nH Inductor 0806SQ15N Coilcraft P1, P2 5.0 k Multi-turn Cermet Trimmer Potentiometer 3224W-1-502E Bourns Q1 RF Power LDMOS Amplifier AFIC901NT1 Freescale R1, R7 15 k, 1/10 W Chip Resistors RR1220P-153-B-T5 Susumu R2, R8 10 k, 1/8 W Chip Resistors CRCW080510K0FKEA Vishay R3 200 , 1/8 W Chip Resistor CRCW0805200RJNEA Vishay R4, R6 1.2 k, 1/8 W Chip Resistors CRCW08051K20FKEA Vishay R5 510 , 1/10 W Chip Resistor RR1220P-511-B-T5 Susumu R9, R10 0 , 2.5 A Chip Resistors CWCR08050000Z0EA Vishay PCB FR4 (S--1000), 0.020, r = 4.8 D75372 MTL AFIC901N RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS — 136–174 MHz VHF BROADBAND REFERENCE CIRCUIT 35 34 33 60 50 32 31 Gps 40 30 32 29 31 Pout 30 28 27 26 29 VDD = 7.5 V, Pin = 0 dBm, IDQ1 = 10 mA, IDQ2 = 30 mA 135 140 145 150 155 160 165 170 Pout, OUTPUT POWER (dBm) Gps, POWER GAIN (dB) 70 D D, DRAIN EFFICIENCY (%) 80 28 175 FREQUENCY (MHz) Figure 4. Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input Power 2.5 0.5 2 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) VDD = 7.5 V, IDQ1 = 10 mA, f = 155 MHz 1.5 1 Pin = 0 dBm Pin = –3 dBm 0.5 0.25 Detail A 0 1.5 2.0 2.5 3.0 VDD = 7.5 V, IDQ1 = 10 mA, f = 155 MHz Pin = 0 dBm Pin = –3 dBm 0 1.5 3.5 4.0 2.0 2.5 VGS2, GATE--SOURCE VOLTAGE (VOLTS) Detail A VGS2, GATE--SOURCE VOLTAGE (VOLTS) 80 70 60 50 40 30 20 32 30 28 26 24 22 20 D, DRAIN EFFICIENCY (%) 36 D 35 135 MHz 34 175 MHz 33 155 MHz 175 MHz 32 31 Gps 155 MHz 30 135 MHz 29 175 MHz 28 Pout 27 135 MHz 26 25 155 MHz VDD = 7.5 Vdc, lDQ1 = 10 mA, lDQ2 = 30 mA 24 23 –8 –6 –4 –2 0 2 Pout, OUTPUT POWER (dBm) Gps, POWER GAIN (dB) Figure 5. Output Power versus Gate--Source Voltage, 2nd Stage 4 Pin, INPUT POWER (dBm) Figure 6. Power Gain, Drain Efficiency and Output Power versus Input Power and Frequency AFIC901N 6 RF Device Data Freescale Semiconductor, Inc. 136–174 MHz VHF BROADBAND REFERENCE CIRCUIT Zo = 75  f = 135 MHz Zinterstage_out f = 175 MHz Zsource f = 135 MHz f = 175 MHz f = 135 MHz f = 175 MHz Zinterstage_in f = 135 MHz Zload f = 175 MHz f MHz Zsource1  Zload1  Zsource2  Zload2  135 129.8 + j62.2 93.0 + j49.5 27.8 + j35.9 34.3 + j2.85 140 123.1 + j54.4 92.5 + j42.5 29.4 + j35.1 33.4 + j1.92 145 117.3 + j49.7 91.6 + j37.2 30.7 + j34.1 32.5 + j1.00 150 112.5 + j47.8 91.0 + j33.3 31.8 + j33.1 31.7 + j0.08 155 109.1 + j47.7 90.9 + j30.7 32.7 + j32.2 30.9 – j0.83 160 107.1 + j49.6 91.9 + j29.2 33.2 + j31.4 30.0 – j1.66 165 106.3 + j53.5 93.9 + j28.6 33.6 + j31.0 29.1 – j2.41 170 106.8 + j59.2 97.4 + j28.7 33.9 + j30.9 28.2 – j3.03 175 108.3 + j67.5 102.6 + j29.4 34.1 + j31.1 27.4 – j3.49 Zsource = Test circuit impedance as measured from gate to gate. Zload = Test circuit impedance as measured from drain to drain. 50  Input Matching Network Interstage Matching Network Stage 1 Zsource1 Zload1 Output Matching Network Stage 2 Zsource2 50  Zload2 Figure 7. VHF Broadband Series Equivalent Source and Load Impedance — 136--174 MHz AFIC901N RF Device Data Freescale Semiconductor, Inc. 7 350–520 MHz UHF BROADBAND REFERENCE CIRCUIT Table 10. 350–520 MHz UHF Broadband Performance (In Freescale Reference Circuit, 50 ohm system) VDD = 7.5 Vdc, IDQ1 = 10 mA, IDQ2 = 30 mA Frequency (MHz) Pin (dBm) Gps (dB) D (%) Pout (dBm) 350 2.3 27.7 52.8 30.0 435 2.1 27.9 59.6 30.0 520 2.4 27.6 66.3 30.0 Table 11. Load Mismatch/Ruggedness (In Freescale 350–520 MHz Reference Circuit, 50 ohm system) IDQ1 = 100 mA, IDQ2 = 30 mA Frequency (MHz) Signal Type VSWR Pin (W) 520 CW > 25:1 at all Phase Angles 3 dB Overdrive from rated power Test Voltage, VDD Result 9 No Device Degradation AFIC901N 8 RF Device Data Freescale Semiconductor, Inc. 350–520 MHz UHF BROADBAND REFERENCE CIRCUIT — 0.83  1.86 (2.11 cm  4.72 cm) J1 R2 L1 C1 C4 C5 C18 L4 P1 R3 C2 C16 C7 C11 R4 R5 L2 R10 C14 C15 C9 R6 L3 R9 C12 C13 C6 R1 P2 R7 C10 L5 C3 R8 VG2 D75372 VG1 B1 Q1 L6 C8 R11 L7 C17 Rev. 0 Figure 8. AFIC901N UHF Broadband Reference Circuit Component Layout — 350–520 MHz Table 12. AFIC901N UHF Broadband Reference Circuit Component Designations and Values — 350–520 MHz Part Description Part Number Manufacturer B1 RF Bead 2508051107Y0 Fair-Rite C1, C5, C7, C9, C10, C12, C14, C18 100 pF Chip Capacitors GQM2195C2E101GB12D Murata C2 10 pF Chip Capacitor GQM2195C2E100FB12D Murata C3 12 pF Chip Capacitor GQM2195C2E120FB12D Murata C4 1 F Chip Capacitor GRM21BR71H105KA12L Murata C6, C13, C15 1000 pF Chip Capacitors C2012X7R2E102M085AA TDK C8 39 pF Chip Capacitor GQM2195C2E390GB12D Murata C11 4.7 pF Chip Capacitor GQM2195C2E4R7BB12D Murata C16 10 F Chip Capacitor GRM31CR61H106KA12L Murata C17 6.8 pF Chip Capacitor GQM2195C2E6R8BB12D Murata J1 Right-Angle Breakaway Headers (3 Pins) 22-28-8360 Molex L1, L4 120 nH Inductors LL1608-FSLR12J TOKO L2 12 nH Inductor LL1608-FSL12NJ TOKO L3 39 nH Inductor LL1608-FSL39NJ TOKO L5 15 nH Inductor LL1608-FSL15NJ TOKO L6 25 nH Inductor 0908SQ25N Coilcraft L7 8.1 nH Inductor 0908SQ8N1 Coilcraft P1, P2 5.0 k Multi-turn Cermet Trimmer Potentiometer 3224W-1-502E Bourns Q1 RF Power LDMOS Amplifier AFIC901NT1 Freescale R1 51 , 1/4 W Chip Resistor SG73P2ATTD51R0F KOA Speer R2, R8 15 k, 1/10 W Chip Resistors RR1220P-153-B-T5 Susumu R3, R9 10 k, 1/8 W Chip Resistors CRCW080510K0FKEA Vishay R4 200 , 1/8 W Chip Resistor CRCW0805200RJNEA Vishay R5, R7 1.2 k, 1/8 W Chip Resistors CRCW08051K20FKEA Vishay R6 2.2 k, 1/8 W Chip Resistor CRCW08052K20JNEA Vishay R10, R11 0 , 2.5 A Chip Resistors CWCR08050000Z0EA Vishay PCB FR4 (S--1000), 0.020, r = 4.8 D75372 MTL AFIC901N RF Device Data Freescale Semiconductor, Inc. 9 TYPICAL CHARACTERISTICS — 350–520 MHz UHF BROADBAND REFERENCE CIRCUIT 80 31 60 29 50 Gps 28 40 27 33 26 32 Pout 25 24 23 340 31 30 VDD = 7.5 V, Pin = 3.0 dBm, lDQ1 = 10 mA, lDQ2 = 30 mA 360 380 400 420 440 460 Pout, OUTPUT POWER (dBm) Gps, POWER GAIN (dB) 70 D 30 D, DRAIN EFFICIENCY (%) 32 480 500 520 29 540 FREQUENCY (MHz) Figure 10. Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input Power VDD = 7.5 V, IDQ1 = 10 mA, f = 435 MHz 0.5 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) 2.5 2 1.5 1 Pin = 3 dBm Pin = 0 dBm 0.5 0 1.5 2.5 3.0 0.25 Pin = 3 dBm Pin = 0 dBm 0 1.0 Detail A 2.0 VDD = 7.5 V, IDQ1 = 10 mA, f = 435 MHz 3.5 4.0 1.5 2.0 2.5 VGS2, GATE--SOURCE VOLTAGE (VOLTS) DETAIL A VGS2, GATE--SOURCE VOLTAGE (VOLTS) D, DRAIN EFFICIENCY (%) 36 80 520 MHz 35 70 D 60 34 435 MHz 50 33 350 MHz 40 32 30 31 520 MHz 20 30 Gps 10 29 350 MHz 32 28 435 MHz 27 30 26 28 Pout 520 MHz 26 25 24 24 350 MHz 435 MHz 22 23 22 VDD = 7.5 Vdc, lDQ1 = 10 mA, lDQ2 = 30 mA 20 21 18 --8 –6 6 8 –4 –2 0 2 4 Pout, OUTPUT POWER (dBm) Gps, POWER GAIN (dB) Figure 9. Output Power versus Gate--Source Voltage, 2nd Stage Pin, INPUT POWER (dBm) Figure 11. Power Gain, Drain Efficiency and Output Power versus Input Power and Frequency AFIC901N 10 RF Device Data Freescale Semiconductor, Inc. 350–520 MHz UHF BROADBAND REFERENCE CIRCUIT f = 350 MHz Zsource Zo = 75  f = 520 MHz f = 520 MHz Zload Zinterstage_out f = 350 MHz f = 520 MHz f = 350 MHz f = 350 MHz Zinterstage_in f = 520 MHz f MHz Zsource1  Zload1  Zsource2  Zload2  350 57.4 + j77.2 60.5 – j16.5 36.3 + j5.69 22.0 + j6.12 360 60.6 + j94.9 62.7 – j20.6 37.2 + j6.57 21.7 + j6.35 370 69.0 + j100.2 65.1 – j24.8 38.3 + j8.07 21.5 + j6.92 380 79.2 + j105.3 66.5 – j29.4 39.4 + j9.66 21.2 + j7.57 390 91.5 + j109.9 65.1 – j30.7 39.2 + j11.6 20.3 + j8.45 400 106.3 + j113.5 65.3 – j28.6 38.6 + j14.6 19.4 + j9.81 410 124.0 + j115.1 65.3 – j26.2 38.0 + j17.3 18.6 + j11.0 420 144.6 + j113.6 64.3 – j23.4 37.3 + j19.2 17.8 + j11.9 430 167.9 + j107.3 62.6 – j21.0 36.7 + j20.1 17.2 + j12.5 440 192.4 + j94.1 60.6 – j19.3 36.7 + j20.3 16.9 + j12.7 450 196.1 + j89.7 58.9 – j18.6 36.8 + j20.4 16.7 + j12.6 460 197.5 + j86.7 57.6 – j19.1 36.8 + j20.5 16.6 + j12.2 470 198.8 + j83.7 56.8 – j20.8 36.8 + j20.6 16.5 + j11.7 480 199.9 + j80.6 56.3 – j23.7 36.8 + j20.7 16.3 + j11.3 490 201.0 + j77.5 55.8 – j27.6 36.9 + j20.8 15.9 + j11.1 500 202.0 + j74.3 54.9 – j32.3 36.9 + j20.9 15.5 + j11.2 510 202.8 + j71.2 53.4 – j36.9 36.9 + j21.0 15.0 + j11.7 520 206.6 + j70.1 51.5 – j40.8 37.7 + j23.5 14.6 + j12.5 Zsource = Test circuit impedance as measured from gate to gate. Zload 50  = Test circuit impedance as measured from drain to drain. Input Matching Network Interstage Matching Network Stage 1 Zsource1 Zload1 Output Matching Network Stage 2 Zsource2 50  Zload2 Figure 12. UHF Broadband Series Equivalent Source and Load Impedance — 350--520 MHz AFIC901N RF Device Data Freescale Semiconductor, Inc. 11 520 MHz NARROWBAND TEST FIXTURE Table 13. 520 MHz Narrowband Performance VDD = 7.5 Vdc, IDQ1 = 8 mA, IDQ2 = 24 mA, Pin = –1 dBm, f = 520 MHz Characteristic Symbol Min Typ Max Unit Output Power Pout — 32.2 — dBm Power Gain Gps — 31.2 — dB Drain Efficiency D — 73.0 — % AFIC901N 12 RF Device Data Freescale Semiconductor, Inc. 520 MHz NARROWBAND TEST FIXTURE — 3  5 (7.6 cm  12.7 cm) C7 C14 C12 C19 D67108 C13 C10 C18 C2 L4 L3 C3 R3 R4 C20 L8 L7 C5 L1 C1 R1 L2 R2 L5 AFIC901N Rev. 0 C17 C15 C16 C6 C4 C11 C8 C23 C21 C22 C9 Figure 13. AFIC901N Narrowband Test Circuit Component Layout — 520 MHz Table 14. AFIC901N Narrowband Test Circuit Component Designations and Values — 520 MHz Part Description Part Number Manufacturer C1 8.2 pF Chip Capacitor ATC600F8R2BT250XT ATC C2 240 pF Chip Capacitor ATC600F241JT250XT ATC C3 39 pF Chip Capacitor ATC600F390JT250XT ATC C4 15 pF Chip Capacitor ATC600F150JT250XT ATC C5 4.7 pF Chip Capacitor ATC600F4R7BT250XT ATC C6 12 pF Chip Capacitor ATC600F120JT250XT ATC C7, C8, C9, C10, C11 240 pF Chip Capacitors ATC600F241JT250XT ATC C12, C15 22 F, 35 V Tantalum Capacitors T491X226K035AT Kemet C13, C16, C19, C22 0.1 F Chip Capacitors C0805C104K1RACTU Kemet C14, C17, C18, C21 0.01 F Chip Capacitors C0805C103K5RACTU Kemet C20, C23 330 F, 35 V Electrolytic Capacitors MCGPR35V337M10X16-RH Multicomp L1, L7, L8 5.5 nH Inductors 0806SQ5N5 Coilcraft L2 12.3 nH Inductor 0806SQ12N Coilcraft L3, L4 22 nH Inductors 0807SQ22N Coilcraft L5 8.9 nH Inductor 0806SQ8N9 Coilcraft R1 8.2 , 1/3 W Chip Resistor RL1220S-8R2-F Susumu R2 100 , 1/4 W Chip Resistor CRCW1206100RFKEA Vishay R3 1.0 , 1/3 W Chip Resistor RL1220S-1R0-F Susumu R4 75 , 1/4 W Chip Resistor SG73P2ATTD75R0F KOA Speer PCB Rogers R04350B, 0.030, r = 3.66 D67108 MTL AFIC901N RF Device Data Freescale Semiconductor, Inc. 13 TYPICAL CHARACTERISTICS — 520 MHz NARROWBAND TEST FIXTURE 2.5 Pout, OUTPUT POWER (WATTS) VDD = 7.5 Vdc, f = 520 MHz, VGS1 = 3 Vdc Pin = 0 dBm 2 1.5 Pin = –3 dBm 1 0.5 0 0 1 3 2 4 5 VGS2’, GATE--SOURCE VOLTAGE (VOLTS) 33 70 50 32 Gps, POWER GAIN (dB) 90 Gps D 31 30 30 10 29 35 30 Pout 28 25 27 26 25 --13 20 VDD = 7.5 Vdc, IDQ1 = 8 mA, IDQ2 = 24 mA, f = 520 MHz --11 –9 --7 --5 --3 --1 1 3 5 7 Pout OUTPUT POWER (dBm) 34 D, DRAIN EFFICIENCY (%) Figure 14. Output Power versus Gate--Source Voltage, 2nd Stage 15 Pin, INPUT POWER (dBm) Figure 15. Power Gain, Drain Efficiency and Output Power versus Input Power f MHz Zsource1  Zload1  Zsource2  Zload2  520 50.3 + j30.9 84.4 + j93.6 3.5 + j17.8 12.3 + j11.4 Zsource = Test circuit impedance as measured from gate to gate. Zload 50  = Test circuit impedance as measured from drain to drain. Input Matching Network Interstage Matching Network Stage 1 Zsource1 Zload1 Output Matching Network Stage 2 Zsource2 50  Zload2 Figure 16. Narrowband Series Equivalent Source and Load Impedance — 520 MHz AFIC901N 14 RF Device Data Freescale Semiconductor, Inc. 0.50 3.00 4.40 0.30 2.6  2.6 solder pad with thermal via structure. All dimensions in mm. Figure 17. PCB Pad Layout for 24--Lead QFN 4  4 A901 WLYW Figure 18. Product Marking AFIC901N RF Device Data Freescale Semiconductor, Inc. 15 PACKAGE DIMENSIONS AFIC901N 16 RF Device Data Freescale Semiconductor, Inc. AFIC901N RF Device Data Freescale Semiconductor, Inc. 17 AFIC901N 18 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes  AN1955: Thermal Measurement Methodology of RF Power Amplifiers Software  .s2p File  Electromigration MTTF Calculator  RF High Power Model Development Tools  Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. 2. 3. 4. Go to http://www.nxp.com/RF Search by part number Click part number link Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Jan. 2016 Description  Initial Release of Data Sheet AFIC901N RF Device Data Freescale Semiconductor, Inc. 19 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. E 2016 Freescale Semiconductor, Inc. AFIC901N Document Number: AFIC901N Rev. 0, 1/2016 20 RF Device Data Freescale Semiconductor, Inc.