AFT05MS006NT1

Freescale Semiconductor Technical Data Document Number: AFT05MS006N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET AFT05MS006NT1 Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in handheld radio equipment. Narrowband Performance (7.5 Vdc, IDQ = 100 mA, TA = 25C, CW) Frequency (MHz) Gps (dB) D (%) Pout (W) 520 (1) 18.3 73.0 6.0 136–941 MHz, 6.0 W, 7.5 V WIDEBAND RF POWER LDMOS TRANSISTOR Wideband Performance (7.5 Vdc, TA = 25C, CW) Frequency (MHz) Pin (W) Gps (dB) D (%) Pout (W) 136–174 0.19 15.5 60.0 6.0 440--520 (2) 0.15 16.3 65.0 6.4 760--870 (3) 0.20 15.2 58.5 6.7 PLD--1.5W Load Mismatch/Ruggedness Frequency (MHz) Signal Type 520 (1) CW VSWR Pin (W) Test Voltage > 65:1 at all Phase Angles 0.12 (3 dB Overdrive) 10.8 Result No Device Degradation 1. Measured in 520 MHz narrowband test circuit. 2. Measured in 440–520 MHz UHF broadband reference circuit. 3. Measured in 760–870 MHz UHF broadband reference circuit. Features  Characterized for Operation from 136 to 941 MHz  Unmatched Input and Output Allowing Wide Frequency Range Utilization  Integrated ESD Protection  Integrated Stability Enhancements  Wideband — Full Power Across the Band  Exceptional Thermal Performance  Extreme Ruggedness  High Linearity for: TETRA, SSB  In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 7--inch Reel. Typical Applications Gate Drain Note: The center pad on the backside of the package is the source terminal for the transistor. Figure 1. Pin Connections  Output Stage VHF Band Handheld Radio  Output Stage UHF Band Handheld Radio  Output Stage for 700–800 MHz Handheld Radio  Freescale Semiconductor, Inc., 2014. All rights reserved. RF Device Data Freescale Semiconductor, Inc. AFT05MS006NT1 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +30 Vdc Gate--Source Voltage VGS --6.0, +12 Vdc Operating Voltage VDD 12.5, +0 Vdc Storage Temperature Range Tstg --65 to +150 C Case Operating Temperature Range TC --40 to +150 C Operating Junction Temperature Range (1,2) TJ --40 to +150 C Total Device Dissipation @ TC = 25C Derate above 25C PD 125 1.0 W W/C Symbol Value (2,3) Unit RJC 1.0 C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 79 C, 6.0 W CW, 7.5 Vdc, IDQ = 100 mA, 520 MHz Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2, passes 2500 V Machine Model (per EIA/JESD22--A115) A, passes 150 V Charge Device Model (per JESD22--C101) IV, passes 2000 V Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 30 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 7.5 Vdc, VGS = 0 Vdc) IDSS — — 2 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 600 nAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 78 Adc) VGS(th) 1.8 2.2 2.6 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 0.78 Adc) VDS(on) — 0.15 — Vdc Forward Transconductance (VDS = 7.5 Vdc, ID = 4.7 Adc) gfs — 4.4 — S Characteristic Off Characteristics On Characteristics 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. (continued) AFT05MS006NT1 2 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Reverse Transfer Capacitance (VDS = 7.5 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.7 — pF Output Capacitance (VDS = 7.5 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 47 — pF Input Capacitance (VDS = 7.5 Vdc, VGS = 0 Vdc  30 mV(rms)ac @ 1 MHz) Ciss — 75 — pF Dynamic Characteristics Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 7.5 Vdc, IDQ = 100 mA, Pin = 19.5 dBm, f = 520 MHz Common--Source Amplifier Output Power Drain Efficiency Pout — 6.0 — W D — 73.0 — % Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) IDQ = 100 mA Frequency (MHz) Signal Type VSWR 520 CW > 65:1 at all Phase Angles Pin (W) 0.12 (3 dB Overdrive) Test Voltage, VDD Result 10.8 No Device Degradation AFT05MS006NT1 RF Device Data Freescale Semiconductor, Inc. 3 TYPICAL CHARACTERISTICS 100 C, CAPACITANCE (pF) Ciss Coss Measured with 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc 10 Crss 1 0 2 6 4 10 8 12 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Figure 2. Capacitance versus Drain--Source Voltage 109 VDD = 7.5 Vdc ID = 0.86 Amps MTTF (HOURS) 108 1.1 Amps 1.32 Amps 107 106 105 90 100 110 120 130 140 150 160 TJ, JUNCTION TEMPERATURE (C) Note: MTTF value represents the total cumulative operating time under indicated test conditions. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 3. MTTF versus Junction Temperature — CW AFT05MS006NT1 4 RF Device Data Freescale Semiconductor, Inc. 520 MHz NARROWBAND PRODUCTION TEST FIXTURE VGG C3 VDD B1 C12 C13 C2 C1 C14 C11 C4 C8 R1 R2 R3 R4 R5 R6 C5 C6 C7 L1 C15 C17 L2 C16 C10 C9 AFT05MS006N Rev. 0 D53508 Figure 4. AFT05MS006NT1 Narrowband Test Circuit Component Layout — 520 MHz Table 6. AFT05MS006NT1 Narrowband Test Circuit Component Designations and Values — 520 MHz Part Description Part Number Manufacturer B1 Short RF Bead 2743019447 Fair--Rite C1 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet C2, C13 0.1 F Chip Capacitors CDR33BX104AKWS AVX C3, C12 0.01 F Chip Capacitors C0805C103K5RAC Kemet C4, C11 180 pF Chip Capacitors ATC100B181JT300XT ATC C5 9.1 pF Chip Capacitor ATC100B9R1CT500XT ATC C6, C7 15 pF Chip Capacitors ATC100B150JT500XT ATC C8, C9 27 pF Chip Capacitors ATC100B270JT500XT ATC C10 2.7 pF Chip Capacitor ATC100B2R7BT500XT ATC C14 330 F, 35 V Electrolytic Capacitor MCGPR35V337M10X16--RH Multicomp C15, C16 20 pF Chip Capacitors ATC100B200JT500XT ATC C17 16 pF Chip Capacitor ATC100B160JT500XT ATC L1 8.0 nH, 3 Turn Inductor A03TKLC Coilcraft L2 5 nH, 2 Turn Inductor A02TKLC Coilcraft R1, R2, R3, R4, R5 1.5 , 1/4 W Chip Resistors RC1206FR--071R5L Yageo R6 27 , 1/4 W Chip Resistor CRCW120627R0FKEA Vishay PCB Rogers RO4350B, 0.030, r = 3.66 D53508 MTL AFT05MS006NT1 RF Device Data Freescale Semiconductor, Inc. 5 AFT05MS006NT1 6 RF Device Data Freescale Semiconductor, Inc. RF INPUT VBIAS Z1 Z2 C1 + C5 C2 Z3 C6 Z4 C7 Z6 Z7 R6 Z8 C9 C8 Z9 R5 R4 R3 R2 R1 Z10 DUT Z11 Z12 L2 C11 Z13 C12 0.160  0.320  0.620 Taper Microstrip 0.332  0.620 Microstrip 0.055  0.620 Microstrip Z8 Z9 0.365  0.320 Microstrip Z5 0.045  0.620 Microstrip 0.190  0.320 Microstrip Z4 Z7 0.055  0.320 Microstrip Z3 Z6 0.490  0.120 Microstrip Z2 Description 0.328  0.080 Microstrip Z1 Microstrip Z14 C15 C13 C16 Z15 0.162  0.320  0.620 Taper Microstrip 0.319  0.320 Microstrip 0.115  0.320 Microstrip 0.222  0.120 Microstrip 0.443  0.120 Microstrip 0.238  0.080 Microstrip Z13 Z15 Z16 Z17 Z18 Z16 VSUPPLY Z14 0.692  0.620 Microstrip 0.045  0.620 Microstrip Z11 Z12 0.243  0.620 Microstrip Z10 Microstrip L3 C14 + Description Figure 5. AFT05MS006NT1 Narrowband Test Circuit Schematic — 520 MHz Z5 C4 Table 7. AFT05MS006NT1 Narrowband Test Circuit Microstrips — 520 MHz C3 B1 C10 Z17 C17 Z18 RF OUTPUT TYPICAL CHARACTERISTICS — 520 MHz NARROWBAND REFERENCE CIRCUIT Pout, OUTPUT POWER (WATTS) 7 VDD = 7.5 Vdc, f = 520 MHz 6 5 Pin = 17.75 dBm 4 3 Pin = 14.75 dBm 2 1 0 0 0.5 1.5 1 2 2.5 3.5 3 4 4.5 VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 6. Output Power versus Gate--Source Voltage 24 90 18 80 70 15 60 VDD = 7.5 Vdc, IDQ = 100 mA f = 520 MHz 12 50 9 Pout 6 40 30 3 D, DRAIN EFFICIENCY (%) Gps 21 Gps, POWER GAIN (dB) Pout, OUTPUT POWER (WATTS) D 20 0 0 0.02 0.04 0.08 0.06 0.1 0.12 0.14 0.16 10 0.18 Pin, INPUT POWER (WATTS) Figure 7. Power Gain, Drain Efficiency and Output Power versus Input Power VDD = 7.5 Vdc, IDQ = 100 mA, Pout = 6.0 W Avg. f MHz Zsource  Zload  520 1.14 + j2.28 1.78 + j1.71 Zsource = Test circuit impedance as measured from gate to ground. Zload 50  Input Matching Network = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Zsource 50  Zload Figure 8. Narrowband Series Equivalent Source and Load Impedance — 520 MHz AFT05MS006NT1 RF Device Data Freescale Semiconductor, Inc. 7 440–520 MHz UHF BROADBAND REFERENCE CIRCUIT Table 8. 440–520 MHz UHF Broadband Performance (In Freescale Reference Circuit, 50 ohm system) VDD = 7.5 Volts, IDQ = 100 mA, TA = 25C, CW Frequency (MHz) Pin (W) Gps (dB) D (%) Pout (W) 440 0.13 16.7 63.7 5.9 480 0.08 18.6 68.5 6.1 520 0.11 17.5 73.1 6.0 Table 9. Load Mismatch/Ruggedness (In Freescale Reference Circuit) Frequency (MHz) Signal Type 480 CW VSWR Pin (W) > 65:1 at all Phase Angles 0.19 (3 dB Overdrive) Test Voltage, VDD Result 10.8 No Device Degradation AFT05MS006NT1 8 RF Device Data Freescale Semiconductor, Inc. 440–520 MHz UHF BROADBAND REFERENCE CIRCUIT VDD GND VDP C1 C7 C8 C15 C6 C9 J1 B1 L1 C14 C10 C5 L6 L3 D49947 R1 L2 C13 C11 AFT05MS006N Rev. 0 C2 L4 C4 C12 Q1 L5 C3 Figure 9. AFT05MS006NT1 UHF Broadband Reference Circuit Component Layout — 440–520 MHz Table 10. AFT05MS006NT1 UHF Broadband Reference Circuit Component Designations and Values — 440–520 MHz Part Description Part Number Manufacturer B1 30 , 6 A Ferrite Bead MPZ2012S300A Fair-Rite C1 18 pF Chip Capacitor ATC600F180JT250XT ATC C2, C3, C11 15 pF Chip Capacitors ATC600F150JT250XT ATC C4 56 pF Chip Capacitor ATC600F560JT250XT ATC C5 100 pF Chip Capacitor ATC600F100JT250XT ATC C6, C7 0.1 F Chip Capacitors GRM21BR71H104KA01B Murata C8 0.01 F Chip Capacitor GRM21BR72A103KA01B Murata C9 240 pF Chip Capacitor ATC600F241JT250XT ATC C10 2.2 F Chip Capacitor GRM31CR71H225KA88L Murata C12 39 pF Chip Capacitor ATC600F390JT250XT ATC C13 18 pF Chip Capacitor ATC600F180JT250XT ATC C14 5.1 pF Chip Capacitor ATC600F5R1BT250XT ATC C15 100 pF Chip Capacitor ATC600F101JT250XT ATC J1 Right-Angle Breakaway Headers (3 pins) 22-28-8360 Molex L1 5.5 nH Inductor 0806SQ5N5 Coilcraft L2 6 nH Inductor 0806SQ6N0 Coilcraft L3, L4 16.6 nH Inductors 0908SQ17N Coilcraft L5 1.65 nH Inductor 0906-2JLC Coilcraft L6 8.1 nH Inductor 0908SQ8N1 Coilcraft Q1 RF Power LDMOS Transistor AFT05MS006NT1 Freescale R1 20 , 1/4 W Chip Resistor CRCW120620R0FKEA Vishay PCB 0.020, r = 4.8, Shengyi S1000-2 D49947 MTL AFT05MS006NT1 RF Device Data Freescale Semiconductor, Inc. 9 AFT05MS006NT1 10 RF Device Data Freescale Semiconductor, Inc. RF INPUT Z1 C1 L1 Z3 L2 Z5 C3 Z6 C4 Z7 Z8 C5 Z9 Z10 R1 DUT Z11 Z12 C11 Z13 Z14 L4 C10 C12 Z15 C9 L5 C8 0.253  0.044 Microstrip 0.127  0.044 Microstrip Z5 Z7 0.124  0.046 Microstrip Z4 0.093  0.044 Microstrip 0.105  0.046 Microstrip Z3 Z6 0.052  0.046 Microstrip Z2 Description 0.060  0.034 Microstrip Z1 Microstrip Z16 C7 C13 Z17 L6 Microstrip Z14 Z13 Z12 Z11 Z10 Z9 Z8 Description 0.120  0.049 Microstrip 0.094  0.170 Microstrip 0.153  0.170 Microstrip 0.070  0.146 Microstrip 0.070  0.146 Microstrip 0.029  0.300 Microstrip 0.123  0.300 Microstrip Microstrip Z20 Z19 Z18 Z17 Z16 Z15 Z18 0.060  0.034 Microstrip 0.056  0.044 Microstrip 0.079  0.044 Microstrip 0.065  0.046 Microstrip 0.163  0.046 Microstrip 0.235  0.049 Microstrip Description Figure 10. AFT05MS006NT1 UHF Broadband Reference Circuit Schematic — 440--520 MHz C2 Z4 C6 L3 Table 11. AFT05MS006NT1 UHF Broadband Reference Circuit Microstrips — 440--520 MHz Z2 VBIAS B1 VSUPPLY C14 Z19 C15 RF Z20 OUTPUT TYPICAL CHARACTERISTICS — 440--520 MHz UHF BROADBAND REFERENCE CIRCUIT 20 18 80 D 70 17 60 Gps 16 50 15 8 14 7 Pout 13 12 420 440 460 480 500 Pout, OUTPUT POWER (WATTS) Gps, POWER GAIN (dB) 19 D, DRAIN EFFICIENCY (%) 90 VDD = 7.5 Vdc Pin = 0.15 W IDQ = 100 mA 6 5 540 520 f, FREQUENCY (MHz) Figure 11. Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input Power f = 480 MHz 1.2 10 8 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) 12 VDD = 7.5 Vdc, Pin = 0.08 W 6 VDD = 7.5 Vdc, Pin = 0.16 W 4 2 0 0.8 1 2 0.4 0.2 0 4 3 VDD = 7.5 Vdc Pin = 0.16 W 0.6 Detail A 0 f = 480 MHz 1.0 VDD = 7.5 Vdc Pin = 0.08 W 0 1 0.5 1.5 2 2.5 VGS, GATE--SOURCE VOLTAGE (VOLTS) 5 Detail A VGS, GATE--SOURCE VOLTAGE (VOLTS) 21 520 MHz 18 60 50 480 MHz 17 40 440 MHz 16 14 70 VDD = 7.5 Vdc IDQ = 100 mA 30 520 MHz 480 MHz 10 0.01 Pout 8 6 4 13 12 11 10 480 MHz 520 MHz 440 MHz 0.1 2 Gps 1 0 Pout, OUTPUT POWER (WATTS) Gps, POWER GAIN (dB) 19 15 80 D 20 D, DRAIN EFFICIENCY (%) Figure 12. Output Power versus Gate--Source Voltage Pin, INPUT POWER (WATTS) Figure 13. Power Gain, Drain Efficiency and Output Power versus Input Power and Frequency AFT05MS006NT1 RF Device Data Freescale Semiconductor, Inc. 11 440--520 MHz UHF BROADBAND REFERENCE CIRCUIT Zo = 10  f = 520 MHz Zsource f = 440 MHz f = 520 MHz f = 440 MHz Zload VDD = 7.5 Vdc, IDQ = 100 mA, Pout = 6 W Avg. f MHz Zsource  Zload  440 2.46 + j3.15 3.80 + j3.27 450 2.30 + j3.23 3.70 + j2.77 460 2.11 + j3.35 3.69 + j2.66 470 1.90 + j3.48 3.60 + j2.61 480 1.71 + j3.72 3.54 + j2.68 490 1.56 + j4.01 3.50 + j2.78 500 1.43 + j4.37 3.46 + j2.92 510 1.33 + j4.75 3.42 + j3.09 520 1.28 + j5.10 3.37 + j3.22 Zsource = Test circuit impedance as measured from gate to ground. Zload 50  Input Matching Network = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Zsource 50  Zload Figure 14. UHF Broadband Series Equivalent Source and Load Impedance — 440--520 MHz AFT05MS006NT1 12 RF Device Data Freescale Semiconductor, Inc. 760--870 MHz UHF BROADBAND REFERENCE CIRCUIT Table 12. 760--870 MHz UHF Broadband Performance (In Freescale Reference Circuit, 50 ohm system) VDD = 7.5 Volts, IDQ = 100 mA, TA = 25C, CW Frequency (MHz) Pin (W) Gps (dB) D (%) Pout (W) 760 0.12 16.6 50.4 6.0 815 0.13 16.1 58.1 6.0 870 0.16 15.0 60.0 6.0 Table 13. Load Mismatch/Ruggedness (In Freescale Reference Circuit) Frequency (MHz) Signal Type 815 CW VSWR Pin (W) > 65:1 at all Phase Angles 0.4 (3 dB Overdrive) Test Voltage, VDD Result 9.0 No Device Degradation AFT05MS006NT1 RF Device Data Freescale Semiconductor, Inc. 13 760--870 MHz UHF BROADBAND REFERENCE CIRCUIT C1 C9 B1 C16 J1 C10 B2 C15 C2 C4 R1 C7 C5 C3 Q1 C8 C6 C13 L1 C11 C12 C14 D55295 Figure 15. AFT05MS006NT1 UHF Broadband Reference Circuit Component Layout — 760--870 MHz Table 14. AFT05MS006NT1 UHF Broadband Reference Circuit Component Designations and Values — 760--870 MHz Part Description Part Number Manufacturer B1, B2 RF Beads 2743019447 Fair--Rite C1, C5, C6, C7, C8 20 pF Chip Capacitors GQM2195C2E200GB12D Murata C2 8.2 pF Chip Capacitor GQM2195C2E8R2BB12D Murata C3 10 pF Chip Capacitor GQM2195C2E100FB12D Murata C4, C13 56 pF Chip Capacitors GQM2195C2E560GB12D Murata C9 1 F Chip Capacitor GRM31MR71H105KA88L Murata C10 10 F Chip Capacitor GRM31CR61H106KA12L Murata C11, C12 15 pF Chip Capacitors GQM2195C2E150FB12D Murata C14, C15 5.6 pF Chip Capacitors GQM2195C2E5R6BB12D Murata C16 100 pF Chip Capacitor GQM2195C2E101GB12D Murata J1 Right--Angle Breakaway Headers (3 pins) 22--28--8360 Molex L1 22 nH Air Core Inductor 0908SQ--22NJL Coilcraft Q1 RF Power LDMOS Transistor AFT05MS006NT1 Freescale R1 200 , 1/8 W Chip Resistor CRCW0805200RJNEA Vishay PCB 0.020, r = 4.8, FR4 D55295 MTL AFT05MS006NT1 14 RF Device Data Freescale Semiconductor, Inc. AFT05MS006NT1 RF Device Data Freescale Semiconductor, Inc. 15 RF INPUT C1 Z2 C3 Z4 Z5 C6 Z6 C5 C4 C8 Z7 C7 Z8 Z9 R1 DUT Z11 Z14 Z12 L1 C12 Z15 C11 C13 Z16 Z17 C14 C10 VDD C15 Z18 0.150  0.050 Microstrip 0.155  0.034 Microstrip 0.430  0.034 Microstrip 0.065  0.034 Microstrip 0.040  0.250 Microstrip 0.222  0.250 Microstrip 0.130  0.250 Microstrip Z2 Z3 Z4 Z5 Z6 Z7 Description Z1 Microstrip 0.027  0.250 Microstrip 0.066  0.034 Microstrip 0.386  0.034 Microstrip 0.027  0.180 Microstrip 0.160  0.034 Microstrip 0.350  0.034 Microstrip 0.210  0.180 Microstrip Z8 Z10 Z11 Z12 Z13 Z14 Description Z9 Microstrip 0.215  0.180 Microstrip 0.065  0.034 Microstrip 0.430  0.034 Microstrip 0.120  0.034 Microstrip 0.150  0.050 Microstrip Z16 Z17 Z18 Z19 Z19 Z15 Microstrip C16 Description Figure 16. AFT05MS006NT1 UHF Broadband Reference Circuit Schematic — 760--870 MHz C2 Z3 C9 Z10 B2 Table 15. AFT05MS006NT1 UHF Broadband Reference Circuit Microstrips — 760--870 MHz Z1 VGS B1 Z13 RF OUTPUT TYPICAL CHARACTERISTICS — 760–870 MHz UHF BROADBAND REFERENCE CIRCUIT 63 18 D 17 16 VDD = 7.5 Vdc, Pin = 0.20 W IDQ = 100 mA 60 57 Gps 15 54 14 10 13 Pout, OUTPUT POWER (WATTS) Gps, POWER GAIN (dB) D, DRAIN EFFICIENCY (%) 66 19 9 Pout 12 8 11 7 10 740 760 780 800 820 840 6 880 860 f, FREQUENCY (MHz) Figure 17. Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input Power f = 815 MHz 6 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) 7 VDD = 7.5 Vdc, Pin = 0.20 W 5 VDD = 7.5 Vdc, Pin = 0.10 W 4 3 2 Detail A 1 0 0.7 0.5 1 1.5 2 2.5 3 VDD = 7.5 Vdc Pin = 0.10 W 0.5 0.4 VDD = 7.5 Vdc Pin = 0.20 W 0.3 0.2 0.1 0 0 f = 815 MHz 0.6 0 0.4 0.8 1.2 1.6 2 VGS, GATE--SOURCE VOLTAGE (VOLTS) 3.5 VGS, GATE--SOURCE VOLTAGE (VOLTS) Detail A Figure 18. Output Power versus Gate--Source Voltage Gps, POWER GAIN (dB) 19 760 MHz 18 760 MHz 17 65 f = 870 MHz 45 25 815 MHz 5 870 MHz 16 15 16 815 MHz 14 Pout 12 8 760 MHz 13 12 0.004 85 D 870 MHz 4 Gps 0 0.01 0.1 Pout, OUTPUT POWER (WATTS) 20 815 MHz VDD = 7.5 Vdc IDQ = 100 mA D, DRAIN EFFICIENCY (%) 21 1 Pin, INPUT POWER (WATTS) Figure 19. Power Gain, Drain Efficiency and Output Power versus Input Power and Frequency AFT05MS006NT1 16 RF Device Data Freescale Semiconductor, Inc. 760--870 MHz UHF BROADBAND REFERENCE CIRCUIT Zo = 2  Zsource f = 870 MHz f = 760 MHz f = 870 MHz Zload f = 760 MHz VDD = 7.5 Vdc, IDQ = 100 mA, Pout = 6 W Avg. f MHz Zsource  Zload  760 1.42 + j1.30 1.72 - j0.24 770 1.37 + j1.21 1.65 - j0.11 780 1.21 + j1.16 1.53 + j0.08 790 1.10 + j1.17 1.46 + j0.25 800 1.09 + j1.19 1.49 + j0.38 810 1.17 + j1.24 1.61 + j0.47 820 1.33 + j1.27 1.82 + j0.50 830 1.42 + j1.22 1.99 + j0.46 840 1.35 + j1.14 1.99 + j0.48 850 1.12 + j1.10 1.84 + j0.56 860 0.90 + j1.08 1.69 + j0.66 870 0.77 + j1.10 1.62 + j0.73 Zsource = Test circuit impedance as measured from gate to ground. Zload 50  Input Matching Network = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Zsource 50  Zload Figure 20. UHF Broadband Series Equivalent Source and Load Impedance — 760--870 MHz AFT05MS006NT1 RF Device Data Freescale Semiconductor, Inc. 17 0.28 (7.11) 0.165 (4.91) 0.089 (2.26) 0.155 (3.94) Solder pad with thermal via structure. 0.085 (2.16) Inches (mm) Figure 21. PCB Pad Layout for PLD--1.5W A5M06 N( )B YYWW Figure 22. Product Marking AFT05MS006NT1 18 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS AFT05MS006NT1 RF Device Data Freescale Semiconductor, Inc. 19 AFT05MS006NT1 20 RF Device Data Freescale Semiconductor, Inc. AFT05MS006NT1 RF Device Data Freescale Semiconductor, Inc. 21 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents, software and tools to aid your design process. Application Notes  AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages  AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins  EB212: Using Data Sheet Impedances for RF LDMOS Devices Software  Electromigration MTTF Calculator  RF High Power Model  .s2p File Development Tools  Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Feb. 2014 Description  Initial Release of Data Sheet AFT05MS006NT1 22 RF Device Data Freescale Semiconductor, Inc. How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. E 2014 Freescale Semiconductor, Inc. AFT05MS006NT1 Document Number: RF Device Data AFT05MS006N Rev. 0, 2/2014 Freescale Semiconductor, Inc. 23