AFT09MS031NR1

Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 1, 8/2012 RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs Designed for mobile two--way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source amplifier applications in mobile radio equipment. Narrowband Performance (13.6 Vdc, IDQ = 500 mA, TA = 25°C, CW) Frequency (MHz) Gps (dB) ηD (%) P1dB (W) 764 18.0 74.1 32 870 17.2 71.0 31 941 15.7 68.1 31 AFT09MS031NR1 AFT09MS031GNR1 764--941 MHz, 31 W, 13.6 V WIDEBAND RF POWER LDMOS TRANSISTORS TO--270--2 PLASTIC AFT09MS031NR1 800 MHz Broadband Performance (13.6 Vdc, IDQ = 100 mA, TA = 25°C, CW) Frequency (MHz) Gps (dB) ηD (%) P1dB (W) 760 15.7 62.0 44 820 15.7 63.0 37 870 15.5 61.0 36 TO--270--2 GULL PLASTIC AFT09MS031GNR1 Load Mismatch/Ruggedness Frequency (MHz) Signal Type 870 (1) CW VSWR Pin (W) Test Voltage >65:1 at all Phase Angles 1.2 (3 dB Overdrive) 17 870 (2) Result No Device Degradation 2.0 (3 dB Overdrive) 1. Measured in 870 MHz narrowband test circuit. 2. Measured in 760--870 MHz broadband reference circuit. Features • Characterized for Operation from 764 to 941 MHz • Unmatched Input and Output Allowing Wide Frequency Range Utilization • Integrated ESD Protection • Integrated Stability Enhancements • Wideband — Full Power Across the Band (764–870 MHz) • 225°C Capable Plastic Package • Exceptional Thermal Performance • High Linearity for: TETRA, SSB, LTE • Cost--effective Over--molded Plastic Packaging • In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13 inch Reel. Typical Applications • Output Stage 800 MHz Trunking Band Mobile Radio • Output Stage 900 MHz Trunking Band Mobile Radio © Freescale Semiconductor, Inc., 2012. All rights reserved. RF Device Data Freescale Semiconductor, Inc. Drain Gate (Top View) Note: The backside of the package is the source terminal for the transistor. Figure 1. Pin Connections AFT09MS031NR1 AFT09MS031GNR1 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +40 Vdc Gate--Source Voltage VGS --6.0, +12 Vdc Operating Voltage VDD 17, +0 Vdc Storage Temperature Range Tstg --65 to +150 °C TC --40 to +150 °C TJ --40 to +225 °C PD 317 1.59 W W/°C Symbol Value (2,3) Unit RθJC 0.63 °C/W Case Operating Temperature Range Operating Junction Temperature Range (1,2) Total Device Dissipation @ TC = 25°C Derate above 25°C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 81°C, 31 W CW, 13.6 Vdc, IDQ = 500 mA, 870 MHz Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2, passes 2500 V Machine Model (per EIA/JESD22--A115) A, passes 100 V Charge Device Model (per JESD22--C101) IV, passes 1200 V Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 40 Vdc, VGS = 0 Vdc) IDSS — — 2 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 13.6 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 600 nAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 115 μAdc) VGS(th) 1.6 2.1 2.6 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1.2 Adc) VDS(on) — 0.1 — Vdc Forward Transconductance (VGS = 10 Vdc, ID = 10 Adc) gfs — 7.8 — S Characteristic Off Characteristics On Characteristics 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. (continued) AFT09MS031NR1 AFT09MS031GNR1 2 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Reverse Transfer Capacitance (VDS = 13.6 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.1 — pF Output Capacitance (VDS = 13.6 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 63 — pF Input Capacitance (VDS = 13.6 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 140 — pF Dynamic Characteristics Functional Tests (1) (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 13.6 Vdc, IDQ = 500 mA, Pout = 31 W, f = 870 MHz Common--Source Amplifier Power Gain Gps 16.0 17.2 18.5 dB Drain Efficiency ηD 68.0 71.0 — % Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system, IDQ = 500 mA) Frequency (MHz) Signal Type VSWR 870 CW >65:1 at all Phase Angles Pin (W) 1.2 (3 dB Overdrive) Test Voltage, VDD Result 17 No Device Degradation 1. Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GN) parts. AFT09MS031NR1 AFT09MS031GNR1 RF Device Data Freescale Semiconductor, Inc. 3 TYPICAL CHARACTERISTICS 300 9 Ciss 8 IDS, DRAIN CURRENT (AMPS) C, CAPACITANCE (pF) 100 Coss Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 10 Crss TA = 25°C VGS = 4.0 Vdc 7 6 5 4 3.5 Vdc 3 3.25 Vdc 2 1 2.5 Vdc 3.0 Vdc 0 1 0 5 15 10 0 20 2 6 4 8 10 12 14 16 18 20 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Figure 2. Capacitance versus Drain--Source Voltage Note: Measured with both sides of the transistor tied together. Figure 3. Drain Current versus Drain--Source Voltage 109 VDD = 13.6 Vdc MTTF (HOURS) 108 ID = 2.6 Amps 3.2 Amps 107 106 3.9 Amps 105 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) Note: MTTF value represents the total cumulative operating time under indicated test conditions. MTTF calculator available at http:/www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 4. MTTF versus Junction Temperature -- CW AFT09MS031NR1 AFT09MS031GNR1 4 RF Device Data Freescale Semiconductor, Inc. 870 MHz NARROWBAND PRODUCTION TEST FIXTURE C9 C10 C13 VGG C16 VDD AFT09MS031N Rev. 0 C14 B1 B2 C15 C11 C12 C7 L1 C3 C5 L2 C1 C2 C4 CUT OUT AREA L3 C6 C8 Figure 5. AFT09MS031NR1 Narrowband Test Circuit Component Layout — 870 MHz Table 6. AFT09MS031NR1 Narrowband Test Circuit Component Designations and Values — 870 MHz Part Description Part Number Manufacturer B1, B2 RF Beads, Long 2743021447 Fair--Rite C1 3.9 pF Chip Capacitor ATC100B3R9CT500XT ATC C2, C14, C15 56 pF Chip Capacitors ATC100B560CT500XT ATC C3, C4, C5, C6 10 pF Chip Capacitors ATC100B100JT500XT ATC C7, C8 3.6 pF Chip Capacitors ATC100B3R6CT500XT ATC C9 2.5 μF Chip Capacitor GRM31CR71H225KA88L Murata C10, C11 0.1 μF Chip Capacitors C1206C104K1RAC--TU Kemet C12 10,000 pF Chip Capacitor ATC200B103KT50XT ATC C13 22 μF, 25 V Tantalum Capacitor TPSD226M025R0200 AVX C16 330 μF, 35 V Electrolytic Capacitor MCGPR35V337M10X16--RH Multicomp L1 8.0 nH Inductor A03TKLC Coilcraft L2 18.5 nH Inductor A05TKLC Coilcraft L3 5.0 nH Inductor A02TKLC Coilcraft PCB 0.030″, εr = 3.5 RO4350B Rogers AFT09MS031NR1 AFT09MS031GNR1 RF Device Data Freescale Semiconductor, Inc. 5 AFT09MS031NR1 AFT09MS031GNR1 6 RF Device Data Freescale Semiconductor, Inc. VGS RF INPUT C9 Z2 + Z3 B1 Z4 Z5 C14 Z6 L1 Z7 Z8 C4 C3 Z9 C5 Z10 C6 Z11 0.280″ × 0.080″ Microstrip 0.490″ × 0.120″ Microstrip 0.610″ × 0.320″ Microstrip 0.320″ × 0.155″ × 0.620″ Microstrip Taper 0.139″ × 0.620″ Microstrip 0.225″ × 0.620″ Microstrip 0.121″ × 0.620″ Microstrip 0.254″ × 0.620″ Microstrip Z2 Z3 Z4 Z5 Z6 Z7 Z8 Description Z1 Microstrip C7 Z12 Z13 Z14 L2 B2 0.190″ × 0.080″ Microstrip 0.040″ × 0.080″ Microstrip 0.454″ × 0.520″ Microstrip 0.054″ × 0.520″ Microstrip 0.620″ × 0.420″ × 0.620″ Microstrip Taper 0.433″ × 0.420″ Microstrip 0.665″ × 0.420″ Microstrip 0.200″ × 0.420″ Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 C8 L3 C11 Z9 Microstrip Description Figure 6. AFT09MS031NR1 Narrowband Test Circuit Schematic — 870 MHz C1 C13 Table 7. AFT09MS031NR1 Narrowband Test Circuit Microstrips — 870 MHz Z1 C10 C15 Z15 C12 C2 C16 + Z16 VDS RF OUTPUT TYPICAL CHARACTERISTICS — 870 MHz 45 VDD = 13.6 Vdc, Pin = 0.6 W Pout, OUTPUT POWER (WATTS) 40 35 VDD = 12.5 Vdc, Pin = 0.6 W 30 VDD = 13.6 Vdc, Pin = 0.3 W 25 20 VDD = 12.5 Vdc Pin = 0.3 W 15 10 5 0 f = 870 MHz 0.5 0 1 1.5 2 2.5 3 4.5 4 VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 7. CW Output Power versus Gate--Source Voltage 70 18 17.5 60 Gps 50 17 40 16.5 Pout 30 16 20 15.5 10 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 18.5 80 ηD VDD = 13.6 Vdc, IDQ = 500 mA f = 870 MHz Pout, OUTPUT POWER (WATTS) 19 0 15 0.01 1 0.1 2 Pin, INPUT POWER (WATTS) Figure 8. Power Gain, CW Output Power and Drain Efficiency versus Input Power VDD = 13.6 Vdc, IDQ = 500 mA, Pout = 31 W Avg. f MHz Zsource Ω Zload Ω 870 0.28 -- j0.71 0.98 -- j0.52 Zsource = Test circuit impedance as measured from gate to ground. Zload 50 Ω Input Matching Network = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Zsource 50 Ω Zload Figure 9. Narrowband Series Equivalent Source and Load Impedance — 870 MHz AFT09MS031NR1 AFT09MS031GNR1 RF Device Data Freescale Semiconductor, Inc. 7 760--870 MHz BROADBAND REFERENCE CIRCUIT Table 8. 760--870 MHz Broadband Performance (In Freescale Reference Circuit, 50 ohm system) VDD = 13.6 Volts, IDQ = 100 mA, TA = 25°C, CW Frequency (MHz) Gps (dB) ηD (%) P1dB (W) 760 15.7 62.0 44 820 15.7 63.0 37 870 15.5 61.0 36 Table 9. Load Mismatch/Ruggedness (In Freescale Reference Circuit) Frequency (MHz) Signal Type 870 CW VSWR Pin (W) >65:1 at all Phase Angles 2.0 (3 dB Overdrive) Test Voltage, VDD Result 17 No Device Degradation AFT09MS031NR1 AFT09MS031GNR1 8 RF Device Data Freescale Semiconductor, Inc. 760--870 MHz BROADBAND REFERENCE CIRCUIT C14 J1 C19 C1 C15 C13 C16 C18 C12 C17 C2 R1 L1 C9 C7 Q1 C3 C4 C5 C6 C10 C11 C8 TO--270--2 Rev. 1 Figure 10. AFT09MS031NR1 Broadband Reference Circuit Component Layout — 760--870 MHz Table 10. AFT09MS031NR1 Broadband Reference Circuit Component Designations and Values — 760--870 MHz Part Description Part Number Manufacturer C1, C10, C11, C12 5.6 pF Chip Capacitors ATC600F5R6BT250XT ATC C2 6.8 pF Chip Capacitor ATC600F6R8BT250XT ATC C3 8.2 pF Chip Capacitor ATC600F8R2BT250XT ATC C4 12 pF Chip Capacitor ATC600F120JT250XT ATC C5 10 pF Chip Capacitor ATC600F100JT250XT ATC C6, C7 30 pF Chip Capacitors ATC600F300JT250XT ATC C8, C9 22 pF Chip Capacitors ATC600F220JT250XT ATC C13, C16, C17 240 pF Chip Capacitors ATC600F241JT250XT ATC C14, C19 10 μF Chip Capacitors GRM31CR61H106KA12L Murata C15, C18 1 μF Chip Capacitors GRM21BR71H105KA12L Murata J1 3 Pin Connector AMP--9--146305--0 TE Connectivity L1 6.9 nH Inductor 0807SQ6N9 Coilcraft Q1 RF Power LDMOS Transistor AFT09MS031NR1 Freescale R1 62 Ω Chip Resistor RG2012N--620--B--T1 Susumu PCB 0.020″, εr = 4.8 S1000--2 Shengyi AFT09MS031NR1 AFT09MS031GNR1 RF Device Data Freescale Semiconductor, Inc. 9 AFT09MS031NR1 AFT09MS031GNR1 10 RF Device Data Freescale Semiconductor, Inc. RF INPUT Z1 C1 Z2 C2 Z3 Z4 Z5 C19 C4 Z6 C18 C5 Z7 Z8 C17 Z9 R1 C6 C7 Z10 VDS Z11 C14 C9 Z12 C15 C8 Z13 Z14 C16 L1 Z15 Z16 C10 Z17 C11 Z18 0.034″ × 0.215″ Microstrip 0.034″ × 0.054″ Microstrip 0.266″ × 0.025″ Microstrip 0.266″ × 0.080″ Microstrip 0.034″ × 0.050″ Microstrip 0.266″ × 0.015″ Microstrip Z3* Z4 Z5, Z6 Z7, Z9 Z8 Z10 * Line length includes microstrip bends 0.034″ × 0.060″ Microstrip 0.034″ × 0.380″ Microstrip Z2* Description Z1, Z20 Microstrip Z19* Z18* Z17 Z16 Z15 Z14 Z13 Z11, Z12 Microstrip 0.034″ × 0.110″ Microstrip 0.034″ × 0.190″ Microstrip 0.034″ × 0.010″ Microstrip 0.034″ × 0.110″ Microstrip 0.390″ × 0.200″ Microstrip 0.034″ × 0.100″ Microstrip 0.390″ × 0.080″ Microstrip 0.390″ × 0.120″ Microstrip Description Table 11. AFT09MS031NR1 Broadband Reference Circuit Microstrips — 760--870 MHz Figure 11. AFT09MS031NR1 Broadband Reference Circuit Schematic — 760--870 MHz C3 VGS C12 Z19 C13 Z20 RF OUTPUT TYPICAL CHARACTERISTICS — 760--860 MHz BROADBAND REFERENCE CIRCUIT 63 ηD 16 15.5 60 57 Gps 40 15 Pout 14.5 14 750 770 790 810 830 850 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 16.5 66 VDD = 13.6 Vdc, Pin = 1 W IDQ = 100 mA 35 870 30 890 Pout, OUTPUT POWER (WATTS) 17 f, FREQUENCY (MHz) Figure 12. Power Gain, CW Output Power and Drain Efficiency versus Frequency at a Constant Input Power 64 ηD 16 62 60 15.5 Gps 37 15 Pout 14.5 14 750 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 16.5 66 VDD = 12.5 Vdc, Pin = 1 W IDQ = 100 mA 770 790 810 830 850 32 870 27 890 Pout, OUTPUT POWER (WATTS) 17 f, FREQUENCY (MHz) Figure 13. Power Gain, CW Output Power and Drain Efficiency versus Frequency at a Constant Input Power AFT09MS031NR1 AFT09MS031GNR1 RF Device Data Freescale Semiconductor, Inc. 11 TYPICAL CHARACTERISTICS — 760--870 MHz BROADBAND REFERENCE CIRCUIT 5 VDD = 13.6 Vdc, Pin = 1 W 50 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) 60 VDD = 12.5 Vdc, Pin = 1 W 40 VDD = 13.6 Vdc, Pin = 0.5 W VDD = 12.5 Vdc Pin = 0.5 W 30 20 f = 820 MHz 10 VDD = 13.6 Vdc Pin = 1 W 4 VDD = 12.5 Vdc Pin = 1 W 3 VDD = 13.6 Vdc Pin = 0.5 W 2 VDD = 12.5 Vdc Pin = 0.5 W 1 f = 820 MHz Detail A 0 0 1 2 3 4 0 5 0 0.8 0.4 1.2 1.6 2 VGS, GATE--SOURCE VOLTAGE (VOLTS) VGS, GATE--SOURCE VOLTAGE (VOLTS) Detail A VDD = 13.6 Vdc IDQ = 100 mA Gps, POWER GAIN (dB) 17 820 MHz 870 MHz 70 100 60 760 MHz Gps 16 120 80 870 MHz 15 60 760 MHz ηD 14 40 760 MHz 820 MHz 13 12 0.03 Pout 820 MHz 20 870 MHz 0 0.1 1 Pout, OUTPUT POWER (WATTS) 18 50 40 30 20 ηD, DRAIN EFFICIENCY (%) Figure 14. CW Output Power versus Gate--Source Voltage 10 2 Pin, INPUT POWER (WATTS) Figure 15. Power Gain, CW Output Power and Drain Efficiency versus Input Power and Frequency AFT09MS031NR1 AFT09MS031GNR1 12 RF Device Data Freescale Semiconductor, Inc. 760--870 MHz BROADBAND REFERENCE CIRCUIT Zo = 2 Ω Zload f = 870 MHz f = 760 MHz f = 760 MHz f = 870 MHz Zsource VDD = 13.6 Vdc, IDQ = 100 mA, Pout = 31 W Avg. f MHz Zsource Ω Zload Ω 760 0.85 -- j1.31 0.80 -- j0.92 770 0.80 -- j1.30 0.78 -- j0.88 780 0.75 -- j1.28 0.78 -- j0.85 790 0.69 -- j1.26 0.76 -- j0.81 800 0.65 -- j1.24 0.76 -- j0.78 810 0.59 -- j1.21 0.72 -- j0.75 820 0.55 -- j1.18 0.70 -- j0.73 830 0.51 -- j1.15 0.67 -- j0.70 840 0.46 -- j1.11 0.62 -- j0.66 850 0.42 -- j1.01 0.57 -- j0.62 860 0.39 -- j1.02 0.52 -- j0.57 870 0.36 -- j0.97 0.48 -- j0.52 Zsource = Test circuit impedance as measured from gate to ground. Zload 50 Ω Input Matching Network = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Zsource 50 Ω Zload Figure 14. Broadband Series Equivalent Source and Load Impedance — 760--870 MHz AFT09MS031NR1 AFT09MS031GNR1 RF Device Data Freescale Semiconductor, Inc. 13 PACKAGE DIMENSIONS AFT09MS031NR1 AFT09MS031GNR1 14 RF Device Data Freescale Semiconductor, Inc. AFT09MS031NR1 AFT09MS031GNR1 RF Device Data Freescale Semiconductor, Inc. 15 AFT09MS031NR1 AFT09MS031GNR1 16 RF Device Data Freescale Semiconductor, Inc. AFT09MS031NR1 AFT09MS031GNR1 RF Device Data Freescale Semiconductor, Inc. 17 AFT09MS031NR1 AFT09MS031GNR1 18 RF Device Data Freescale Semiconductor, Inc. AFT09MS031NR1 AFT09MS031GNR1 RF Device Data Freescale Semiconductor, Inc. 19 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents, software and tools to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages • AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File Development Tools • Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 May 2012 • Initial Release of Data Sheet 1 Aug. 2012 • Load Mismatch/Ruggedness tables: changed output power to input power to clarify the conditions used during test, p. 1, 8 • Fig. 10, Broadband Reference Circuit Component Layout — 760--870 MHz: added C18 and C19; replaced L1 with R1 and L2 with L1, p. 9 • Table 10, Broadband Reference Circuit Component Designations and Values — 760--870 MHz: changed C14 description from 0.10 μF to 10 μF and part number from GRM21BR71H104KA01B to GRM31CR61H106KA12L; changed C15 description from 0.01 μF to 1 μF and part number from GRM21BR72A103KA01B to GRM21BR71H105KA12L; changed C17 description from 22 pF to 240 pF and part number from ATC100A220JT150XT to ATC600F241JT250XT; added C18 and C19; replaced L1 with R1 and L2 with L1, p. 9 • Fig. 11, Broadband Reference Circuit Schematic — 760--870 MHz: added C18 and C19; replaced L1 with R1 and L2 with L1, p. 10 Modifications to Fig. 10, Table 10 and Fig. 11 will improve stability of the test circuit and improve performance under a modulated signal, p. 9, 10 AFT09MS031NR1 AFT09MS031GNR1 20 RF Device Data Freescale Semiconductor, Inc. How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. 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