Freescale Semiconductor
Technical Data
Document Number: AFT26P100--4WS
Rev. 2, 3/2015
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These 22 watt symmetrical Doherty RF power LDMOS transistors are
designed for cellular base station applications requiring very wide instantaneous
bandwidth capability covering the frequency range of 2496 to 2690 MHz.
AFT26P100--4WSR3
AFT26P100--4WGSR3
Typical Doherty Single--Carrier W--CDMA Characterization Performance:
VDD = 28 Volts, VGSA = 0.4 Vdc, IDQB = 344 mA, Pout = 22 Watts Avg.,
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2496 MHz
15.5
44.4
8.0
--32.3
--15
2590 MHz
16.1
43.5
7.8
--34.9
--14
2690 MHz
15.3
43.9
7.4
--35.0
--13
2496–2690 MHz, 22 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTORS
NI--780S--4L
AFT26P100--4WSR3
Features
Designed for Wide Instantaneous Bandwidth Applications
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Able to Withstand Extremely High Output VSWR and Broadband Operating
Conditions
In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel.
NI--780GS--4L
AFT26P100--4WGSR3
Peaking
1 RFoutA/VDSA
RFinA/VGSA 3
(2)
2 RFoutB/VDSB
RFinB/VGSB 4
Carrier
(Top View)
Figure 1. Pin Connections
2. Pin connections 1 and 2 are DC coupled
and RF independent.
1. All characterization data measured in characterization fixture with device soldered to heatsink.
Freescale Semiconductor, Inc., 2013, 2015. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
AFT26P100--4WSR3 AFT26P100--4WGSR3
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
C
Case Operating Temperature Range
TC
--40 to +125
C
Operating Junction Temperature Range (1,2)
TJ
--40 to +225
C
CW
195
2.60
W
W/C
Symbol
Value (2,3)
Unit
RJC
0.60
C/W
CW Operation @ TC = 25C
Derate above 25C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 77C, 22 W CW, 28 Vdc, VGSA = 0.7 Vdc,
IDQB = 200 mA, 2590 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
III
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
5
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage (5)
(VDS = 10 Vdc, ID = 140 Adc)
VGS(th)
0.8
1.2
1.6
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, IDB = 200 mA, Measured in Functional Test)
VGSB(Q)
1.3
1.8
2.1
Vdc
Drain--Source On--Voltage (4)
(VGS = 6 Vdc, ID = 1.4 Adc)
VDS(on)
0.1
0.15
0.3
Vdc
Characteristic
Off Characteristics (4)
On Characteristics
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
4. Measurement made with both sides of the transistor tied together.
5. Each side of device measured separately.
(continued)
AFT26P100--4WSR3 AFT26P100--4WGSR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (1,2,3,4) (In Freescale Doherty Production Test Fixture, 50 ohm system) VDD = 28 Vdc, VGSA = 0.7 Vdc, IDQB = 200 mA,
Pout = 22 W Avg., f = 2690 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
Gps
14.4
15.1
17.4
dB
Drain Efficiency
D
39.0
41.0
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
PAR
6.8
7.4
—
dB
ACPR
—
--33.8
--30.0
dBc
IRL
—
--17
--10
dB
Load Mismatch (In Freescale Production Test Fixture, 50 ohm system) IDQB = 200 mA, f = 2590 MHz
VSWR 10:1 at 32 Vdc, 125 W CW Output Power
(3 dB Input Overdrive from 100 W CW Rated Power)
No Device Degradation
Typical Performances (3,5) (In Freescale Doherty Characterization Test Fixture, 50 ohm system) VDD = 28 Vdc, VGSA = 0.4 Vdc,
IDQB = 344 mA, 2496--2690 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
87
—
W
Pout @ 3 dB Compression Point (6)
P3dB
—
125
—
W
—
18
—
VBWres
—
150
—
MHz
Gain Flatness in 194 MHz Bandwidth @ Pout = 22 W Avg.
GF
—
0.2
—
dB
Gain Variation over Temperature
(--30C to +85C)
G
—
0.01
—
dB/C
P1dB
—
0.01
—
dB/C
AM/PM
(Maximum value measured at the P3dB compression point across
the 2496--2690 MHz frequency range)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Output Power Variation over Temperature
(--30C to +85C) (7)
1.
2.
3.
4.
VDDA and VDDB must be tied together and powered by a single DC power supply.
Part internally matched both on input and output.
Measurement made with device in a symmetrical Doherty configuration.
Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GS) parts.
5. All characterization data measured in characterization fixture with device soldered to heatsink.
6. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
7. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
AFT26P100--4WSR3 AFT26P100--4WGSR3
RF Device Data
Freescale Semiconductor, Inc.
3
VDSA
VGSA
C9
R2
C13
C6
C5
C10
C15
P
R1
C16
C17
C2
C7
R3
AFT26P100--4WS
Rev. 3--b
CUT OUT AREA
C1
C
C3
C4
C8
C11
C14
C12
VGSB
VDSB
NOTE: VDDA and VDDB must be tied together and powered by a single DC power supply.
Figure 2. AFT26P100--4WSR3 Production Test Circuit Component Layout
Table 5. AFT26P100--4WSR3 Production Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2
8.2 pF Chip Capacitors
ATC600F8R2BT250XT
ATC
C3
6.8 pF Chip Capacitor
ATC600F6R8BT250XT
ATC
C4
4.3 pF Chip Capacitor
ATC600F4R3BT250XT
ATC
C5, C6, C7, C8, C17
4.3 pF Chip Capacitors
ATC100B4R3CT500XT
ATC
C9, C10, C11, C12
10 F Chip Capacitors
GRM55DR61H106KA88L
Murata
C13, C14
470 F, 63 V Electrolytic Capacitors
MCGPR63V477M13X26-RH
Multicomp
C15
0.5 pF Chip Capacitor
ATC800B0R5BT500XT
ATC
C16
0.3 pF Chip Capacitor
ATC800B0R3BT500XT
ATC
R1
100 , 1/4 W Chip Resistor
CRCW1206100RFKEA
Vishay
R2, R3
5.1 , 1/10 W Chip Resistors
CRCW08055R10JNEA
Vishay
PCB
0.020, r = 3.5
RO4350B
Rogers
AFT26P100--4WSR3 AFT26P100--4WGSR3
4
RF Device Data
Freescale Semiconductor, Inc.
R3
R1
C19
C3
C15
C7
VDSA
VGSA
C23
C16
C8
C17
P
C1
R5
C11
C13
C5
Q1
Q1
C12
C2
C
C14 C6
C9
C10
C20
C16
VGSB
R2
C4
C22
AFT26P100--4WS
Rev. 1
VDSB
C21
C24
R4
NOTE 1: All characterization data measured in characterization fixture with device soldered to heatsink.
NOTE 2: VDDA and VDDB must be tied together and powered by a single DC power supply.
Figure 3. AFT26P100--4WSR3 Characterization Test Circuit Component Layout
Table 6. AFT26P100--4WSR3 Characterization Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C3, C4, C5, C6, C7,
C8, C9, C10
6.8 pF Chip Capacitors
ATC600F6R8BT250XT
ATC
C11, C12, C13, C14
0.2 pF Chip Capacitors
ATC600F0R2BT250XT
ATC
C15, C16, C17, C18, C19,
C20, C21, C22
10 F, 50 V Chip Capacitors
GRM32ER61H106KA12L
Murata
C23, C24
470 F, 63 V Electrolytic Capacitors
MCGPR63V477M13X26-RH
Multicomp
Q1
RF Power LDMOS Transistor
AFT26P100--4WSR3
Freescale
R1, R2
0 , 1 A Chip Jumpers
CWCR08050000Z0EA
Vishay
R3, R4
5.1 , 1/8 W Chip Resistors
CRCW08055R10JNEA
Vishay
R5
100 , 1/4 W Chip Resistor
CRCW1206100RFKEA
Vishay
PCB
0.020, r = 3.5
RO4350B
Rogers
AFT26P100--4WSR3 AFT26P100--4WGSR3
RF Device Data
Freescale Semiconductor, Inc.
5
44
D
15.8
15.6
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
15.4
43.5
Gps
15.2
43
IRL
15
14.6
14.4
2480
2540
2570
2600
--32
--13
--34
--35
ACPR
2510
--12
--33
PARC
14.8
--31
2630
2660
2690
--14
--15
--16
--36
2720
--17
--1.8
--2
--2.2
--2.4
--2.6
PARC (dB)
44.5
IRL, INPUT RETURN LOSS (dB)
16
Gps, POWER GAIN (dB)
45
VDD = 28 Vdc, Pout = 22 W (Avg.), VGSA = 0.4 Vdc
IDQB = 344 mA, Single--Carrier W--CDMA
16.2
ACPR (dBc)
16.4
D, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS (1)
--2.8
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 4. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 22 Watts Avg.
--20
VDD = 28 Vdc, Pout = 33 W (PEP)
VGSA = 0.4 Vdc, IDQB = 344 mA
--30
IM3--U
IM3--L
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2590 MHz
--40
IM5--L
--50
IM5--U
IM7--L
--60
IM7--U
--70
1
10
100
200
TWO--TONE SPACING (MHz)
16.2
1
16
15.8
15.6
15.4
15.2
0
VDD = 28 Vdc, VGSA = 0.4 Vdc
IDQB = 344 mA, f = 2590 MHz
D
Gps
46
--30
40
ACPR
--2 dB = 21.5 W
--2
--28
43
--1 dB = 15 W
--1
49
37
--3 dB = 29 W
--3
--4
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
12
16
20
24
PARC
28
--32
--34
ACPR (dBc)
2
D DRAIN EFFICIENCY (%)
16.4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 5. Intermodulation Distortion Products versus
Two--Tone Spacing
--36
34
--38
31
--40
32
Pout, OUTPUT POWER (WATTS)
Figure 6. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
1. All characterization data measured in characterization fixture with device soldered to heatsink.
AFT26P100--4WSR3 AFT26P100--4WGSR3
6
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS (1)
2590 MHz
15.8
ACPR
2690 MHz
15.4
50
--20
2590 MHz 45
2690 MHz
40
--25
D
35
2496 MHz
Gps
2496 MHz
15
2590 MHz 2690 MHz
14.6
25
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
14.2
4
30
D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
VDD = 28 Vdc, VGSA = 0.4 Vdc
IDQB = 344 mA
2496 MHz
16.2 Single--Carrier W--CDMA
20
10
--30
--35
--40
ACPR (dBc)
16.6
--45
--50
50
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
17
GAIN (dB)
15
--6
--8
Gain
14
--10
13
IRL (dB)
16
--4
VDD = 28 Vdc
Pin = --20 dBm
VGSA = 0.4 Vdc
IDQB = 344 mA
--12
IRL
12
11
2300
--14
2375
2450
2525
2600
2675
2750
2825
--16
2900
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
1. All characterization data measured in characterization fixture with device soldered to heatsink.
AFT26P100--4WSR3 AFT26P100--4WGSR3
RF Device Data
Freescale Semiconductor, Inc.
7
VDD = 28 Vdc, IDQA = 189 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2500
4.37 -- j13.8
5.84 + j14.7
3.19 -- j9.50
16.3
48.7
73
53.8
--13
2600
7.22 -- j15.5
9.54 + j16.6
3.35 -- j9.78
16.7
48.6
73
54.9
--12
2690
13.2 -- j15.4
15.2 + j17.0
3.40 -- j10.5
16.5
48.8
76
55.8
--11
Max Output Power
P3dB
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
3.19 -- j9.84
14.2
49.4
87
54.9
--20
10.4 + j18.5
3.35 -- j10.4
14.4
49.4
87
54.8
--18
17.9 + j18.8
3.40 -- j10.9
14.4
49.5
89
56.1
--16
f
(MHz)
Zsource
()
Zin
()
2500
4.37 -- j13.8
5.71 + j15.8
2600
7.22 -- j15.5
2690
13.2 -- j15.4
Zload
()
(2)
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 9. Single Side Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, IDQA = 189 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
6.14 -- j6.97
18.5
47.1
51
62.9
--20
8.57 + j17.1
5.28 -- j7.45
18.6
47.4
54
62.1
--18
13.9 + j18.4
4.69 -- j7.79
18.4
47.5
57
63.7
--17
f
(MHz)
Zsource
()
Zin
()
2500
4.37 -- j13.8
5.16 + j14.8
2600
7.22 -- j15.5
2690
13.2 -- j15.4
Zload
()
(1)
Max Drain Efficiency
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2500
4.37 -- j13.8
5.04 + j15.8
5.63 -- j7.56
16.2
48.1
65
62.6
--28
2600
7.22 -- j15.5
9.18 + j18.8
4.99 -- j7.91
16.3
48.3
67
61.9
--25
2690
13.2 -- j15.4
16.3 + j20.4
4.60 -- j8.25
16.2
48.4
69
63.5
--24
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 10. Single Side Load Pull Performance — Maximum Drain Efficiency Tuning
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
AFT26P100--4WSR3 AFT26P100--4WGSR3
8
RF Device Data
Freescale Semiconductor, Inc.
P1dB -- TYPICAL LOAD PULL CONTOURS — 2600 MHz
--3
44.5
--4
--5
46
--6
--8
--9
P
--10
48.5
E
47
48
47.5
IMAGINARY ()
46.5
--7
--6
--7
--12
--13
--13
6
5
7
8
10
9
58
P
--10
--12
4
60
--9
--11
3
62 E
--8
--11
2
54
--4
45.5
--5
IMAGINARY ()
--3
45
56
54
52
46
2
3
50
48
4
6
5
7
8
48
9
10
REAL ()
REAL ()
Figure 11. P1dB Load Pull Output Power Contours (dBm)
Figure 12. P1dB Load Pull Efficiency Contours (%)
--3
--3
--4
--4
19.5
--6
19
--7
E
--8
18.5
--9
--12
3
4
--18
--7
E
--8
--16
--9
--14
P
--12
--12
16.5
2
--20
--11
17
16
6
5
7
8
9
10
--22
--6
--10
15.5
--11
--13
18
17.5
P
--10
--24
--26
--5
IMAGINARY ()
IMAGINARY ()
--5
--28
--13
2
3
4
5
6
7
8
9
10
REAL ()
REAL ()
Figure 13. P1dB Load Pull Gain Contours (dB)
Figure 14. P1dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT26P100--4WSR3 AFT26P100--4WGSR3
RF Device Data
Freescale Semiconductor, Inc.
9
P3dB -- TYPICAL LOAD PULL CONTOURS — 2600 MHz
--5
--6
--7
IMAGINARY ()
47.5
E
--8
48
--9
48.5
49
--10
P
--9
--12
--12
--13
--13
4
5
6
7
8
10
9
60
--10
--11
3
E
--8
--11
2
54
--6
47
--7
IMAGINARY ()
--5
46.5
46
P
58
56
44 46
48
2
3
54
52
50
4
5
6
50
7
8
9
10
REAL ()
Figure 15. P3dB Load Pull Output Power Contours (dBm)
Figure 16. P3dB Load Pull Efficiency Contours (%)
--5
--5
--6
--6
--7
--7
17
E
--8
--9
16.5
--10
P
16
--11
2
3
4
--30
--26
--28
--24
E
--8
--22
--9
--20
--10
P
--18
--12
14 14.5
13
--32
--11
15.5
15
13.5
--12
--13
IMAGINARY ()
IMAGINARY ()
REAL ()
5
6
7
8
9
10
--13
--16
2
3
4
5
6
7
8
9
10
REAL ()
REAL ()
Figure 17. P3dB Load Pull Gain Contours (dB)
Figure 18. P3dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT26P100--4WSR3 AFT26P100--4WGSR3
10
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
AFT26P100--4WSR3 AFT26P100--4WGSR3
RF Device Data
Freescale Semiconductor, Inc.
11
AFT26P100--4WSR3 AFT26P100--4WGSR3
12
RF Device Data
Freescale Semiconductor, Inc.
AFT26P100--4WSR3 AFT26P100--4WGSR3
RF Device Data
Freescale Semiconductor, Inc.
13
AFT26P100--4WSR3 AFT26P100--4WGSR3
14
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
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REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
May 2013
Initial Release of Data Sheet
1
Aug. 2013
Fig. 3, AFT26P100--4WSR3 Characterization Test Circuit Component Layout, updated to include soldered
down device in the layout drawing, p. 5
Table 6, AFT26P100--4WSR3 Characterization Test Circuit Component Designations and Values, updated
to include soldered down Freescale device, p. 5
2
Mar. 2015
Added part number AFT26P100--4WGSR3, p. 1
Added NI--780GS--4L package isometric, p. 1, and Mechanical Outline, pp. 13--14
AFT26P100--4WSR3 AFT26P100--4WGSR3
RF Device Data
Freescale Semiconductor, Inc.
15
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E 2013, 2015 Freescale Semiconductor, Inc.
AFT26P100--4WSR3 AFT26P100--4WGSR3
Document Number: AFT26P100--4WS
Rev. 2, 3/2015
16
RF Device Data
Freescale Semiconductor, Inc.
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