NXP Semiconductors
Technical Data
Document Number: AFT27S006N
Rev. 5, 12/2017
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
AFT27S006NT1
This 28.8 dBm RF power LDMOS transistor is designed for cellular base
station applications covering the frequency range of 728 to 3700 MHz.
Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQ = 65 mA, Pout = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.(1)
700 MHz
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
728 MHz
24.3
20.2
9.9
--45.6
--19
748 MHz
24.4
19.9
9.9
--45.9
--17
768 MHz
24.2
19.4
9.8
--46.2
--13
728--3700 MHz, 28.8 dBm AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQ = 70 mA, Pout = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.(1)
2100 MHz
PLD--1.5W
PLASTIC
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2110 MHz
22.2
18.3
9.2
--42.3
--14
2140 MHz
22.8
19.8
9.5
--44.6
--17
2170 MHz
22.5
20.2
9.3
--46.0
--13
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2300 MHz
22.9
20.9
9.8
--41.0
--10
2350 MHz
23.5
21.5
9.4
--40.8
--24
Note: The center pad on the backside of the
package is the source terminal for the
transistor.
2400 MHz
23.0
22.4
8.9
--41.0
--11
Figure 1. Pin Connections
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2500 MHz
20.4
19.4
9.5
--44.0
--7
2600 MHz
22.0
21.2
9.1
--42.5
--16
2700 MHz
20.9
20.3
8.5
--40.9
--7
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
3400 MHz
16.1
14.3
9.0
--44.1
--9
3500 MHz
17.9
16.4
9.1
--46.2
--13
3600 MHz
16.0
16.7
8.7
--44.4
--4
RFin/VGS
RFout/VDS
2300 MHz
(Top View)
2600 MHz
3500 MHz
1. All data measured in fixture with device soldered to heatsink.
Features
Greater negative gate--source voltage range for improved Class C operation
Designed for digital predistortion error correction systems
Universal broadband driver
2013–2015, 2017 NXP B.V.
RF Device Data
NXP Semiconductors
AFT27S006NT1
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
C
Case Operating Temperature Range
TC
--40 to +150
C
(1,2)
TJ
--40 to +150
C
Characteristic
Symbol
Value (2,3)
Unit
RJC
3.4
C/W
Operating Junction Temperature Range
Table 2. Thermal Characteristics
Thermal Resistance, Junction to Case
Case Temperature 78C, 0.76 W CW, 28 Vdc, IDQ = 70 mA, 2140 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1B
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
III
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 7.7 Adc)
VGS(th)
0.8
1.2
1.6
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 70 mAdc, Measured in Functional Test)
VGS(Q)
1.5
1.8
2.3
Vdc
Drain--Source On--Voltage
(VGS = 6 Vdc, ID = 77 mAdc)
VDS(on)
0.1
0.2
0.3
Vdc
Characteristic
Off Characteristics
On Characteristics
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
(continued)
AFT27S006NT1
2
RF Device Data
NXP Semiconductors
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In NXP Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 70 mA, Pout = 28.8 dBm Avg., f = 2170 MHz, Single--Carrier
W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel
Bandwidth @ 5 MHz Offset.
Power Gain
Gps
21.0
22.0
24.5
dB
Drain Efficiency
D
17.0
20.0
—
%
ACPR
—
--44.0
--38.5
dBc
IRL
—
--16
--10
dB
Adjacent Channel Power Ratio
Input Return Loss
Load Mismatch (In NXP Test Fixture, 50 ohm system) IDQ = 70 mA, f = 2140 MHz
VSWR 5:1 at 32 Vdc, 8.1 W CW Output Power
(3 dB Input Overdrive from 6 W CW Rated Power)
No Device Degradation
Typical Performance (In NXP Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 70 mA, 2110--2170 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
6
—
W
—
--10.2
—
VBWres
—
80
—
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout = 28.8 dBm Avg.
GF
—
0.053
—
dB
Gain Variation over Temperature
(--30C to +85C)
G
—
0.012
—
dB/C
P1dB
—
0.004
—
dB/C
AM/PM
(Maximum value measured at the P3dB compression point across
the 2110--2170 MHz frequency range.)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Output Power Variation over Temperature
(--30C to +85C)
Table 6. Ordering Information
Device
AFT27S006NT1
Tape and Reel Information
T1 Suffix = 1000 Units, 16 mm Tape Width, 7--inch Reel
Package
PLD--1.5W
AFT27S006NT1
RF Device Data
NXP Semiconductors
3
VDD
VGG
C7
C13
C6
C12
C8
R1
C1*
Q1
C2
C5*
C3
C4
C9
C10
D51056
AFT27S006N
Rev. 2
2100MHz
C11
VDD
*C1 and C5 are mounted vertically.
NOTE: All data measured in fixture with device soldered to heatsink.
Figure 2. AFT27S006NT1 Test Circuit Component Layout — 2110--2170 MHz
Table 7. AFT27S006NT1 Test Circuit Component Designations and Values — 2110--2170 MHz
Part
Description
Part Number
Manufacturer
C1, C5, C6, C8, C9
9.1 pF Chip Capacitors
ATC100B39R1JT500XT
ATC
C2
1.2 pF Chip Capacitor
ATC100B1R2JT500XT
ATC
C3
2.7 pF Chip Capacitor
ATC100B2R7JT500XT
ATC
C4
1.5 pF Chip Capacitor
ATC100B1R5JT500XT
ATC
C7, C10, C11, C12, C13
10 F Chip Capacitors
GRM32ER61H106KA12L
Murata
Q1
RF Power LDMOS Transistor
AFT27S006N
NXP
R1
4.75 , 1/4 W Chip Resistor
CRCW12064R75FNEA
Vishay
PCB
Rogers RO4350B, 0.020, r = 3.66
D51056
MTL
AFT27S006NT1
4
RF Device Data
NXP Semiconductors
TYPICAL CHARACTERISTICS — 2110--2170 MHz
Gps
22
21
IRL
20
VDD = 28 Vdc, Pout = 28.8 dBm (Avg.)
IDQ = 70 mA, Single--Carrier W--CDMA
18
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
14
16
--37
--6
--39
--10
19
PARC --41
18
--43
17
--45
ACPR
16
2060
2080
2100
2120
2140
2160
2180
2200
--14
--18
--22
--47
2240
--26
--0.2
--0.4
--0.6
--0.8
--1
PARC (dB)
23
IRL, INPUT RETURN LOSS (dB)
Gps, POWER GAIN (dB)
20
D
24
D, DRAIN
EFFICIENCY (%)
22
25
ACPR (dBc)
26
--1.2
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 28.8 dBm Avg.
--20
IM3--U
--30
IM3--L
--40
IM5--L
IM5--U
--50
IM7--L
IM7--U
--60 VDD = 28 Vdc, Pout = 5.6 W (PEP), IDQ = 70 mA
Two--Tone Measurements, (f1 + f2)/2 = Center
Frequency of 2140 MHz
--70
10
1
100
200
TWO--TONE SPACING (MHz)
23.5
1
23
22.5
22
21.5
21
VDD = 28 Vdc, IDQ = 70 mA, f = 2140 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
0
D
--20
35
--25
30
--2 dB = 1.1 W
Gps 25
--1
--1 dB = 0.45 W
--3 dB = 1.55 W
--2
20
ACPR
--3
--4
40
PARC
0
0.5
1
1.5
2
--30
--35
ACPR (dBc)
2
D DRAIN EFFICIENCY (%)
24
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
--40
15
--45
10
--50
2.5
Pout, OUTPUT POWER (WATTS)
Figure 5. Output Peak--to--Average Ratio Compression
(PARC) versus Output Power
AFT27S006NT1
RF Device Data
NXP Semiconductors
5
TYPICAL CHARACTERISTICS — 2110--2170 MHz
Gps, POWER GAIN (dB)
23
2110 MHz
22
2170 MHz
Gps
Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
21
2170 MHz
--20
50
--25
40
30
ACPR
20
60
D
20
2140 MHz
10
19
2110 MHz
18
0.1
0
10
1
--30
--35
--40
ACPR (dBc)
VDD = 28 Vdc, IDQ = 70 mA, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
2140 MHz
D, DRAIN EFFICIENCY (%)
24
--45
--50
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
24
35
Gain
25
22
15
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 70 mA
18
5
IRL (dB)
GAIN (dB)
20
--5
16
IRL
14
12
1950
--15
1990
2030
2070
2110
2150
2190
2230
--25
2270
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
AFT27S006NT1
6
RF Device Data
NXP Semiconductors
Table 8. Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, IDQ = 67 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
8.26 + j8.38
22.0
39.4
9
60.6
--12
0.795 -- j1.16
9.17 + j8.20
21.9
39.4
9
59.9
--15
0.833 -- j1.23
8.84 + j7.80
21.8
39.6
9
60.7
--15
f
(MHz)
Zsource
()
Zin
()
2110
1.63 + j1.52
0.727 -- j1.20
2140
1.08 + j1.13
2170
1.12 + j0.824
Zload
()
(1)
Max Output Power
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
2110
1.63 + j1.52
0.648 -- j1.04
10.1 + j7.90
19.7
40.2
11
60.6
--17
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2140
1.08 + j1.13
0.73 -- j0.977
10.4 + j7.71
19.6
40.2
11
59.7
--22
2170
1.12 + j0.824
0.815 -- j0.997
10.4 + j7.39
19.6
40.3
11
60.5
--21
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 9. Load Pull Performance — Maximum Drain Efficiency Tuning
VDD = 28 Vdc, IDQ = 67 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2110
1.63 + j1.52
0.602 -- j1.19
4.69 + j12.4
24.1
37.5
6
69.4
--19
2140
1.08 + j1.13
0.677 -- j1.15
5.12 + j11.9
24.0
37.9
6
68.4
--23
2170
1.12 + j0.824
0.708 -- j1.17
4.92 + j11.7
24.0
37.8
6
69.4
--24
Max Drain Efficiency
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload
()
(2)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2110
1.63 + j1.52
0.562 -- j1.04
5.40 + j12.0
21.8
38.6
7
69.8
--26
2140
1.08 + j1.13
0.635 -- j0.985
5.45 + j11.6
21.8
38.7
7
68.1
--32
2170
1.12 + j0.824
0.716 -- j0.996
5.75 + j11.3
21.6
38.9
8
68.6
--30
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
AFT27S006NT1
RF Device Data
NXP Semiconductors
7
P1dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz
16
16
14
38
12
38.5
E
39
10
P
8
37.5
6
36
4
2
E
64
62
68
60
37
58
10
56
P
8
54
6
52
4
35.5
2
66
12
IMAGINARY ()
IMAGINARY ()
14
36.5
4
6
8
12
10
2
14
4
2
6
8
10
12
14
REAL ()
REAL ()
Figure 8. P1dB Load Pull Output Power Contours (dBm)
Figure 9. P1dB Load Pull Efficiency Contours (%)
16
16
25
12
14
24
24.5
E
23.5
23
22.5
10
IMAGINARY ()
IMAGINARY ()
14
22
P
8
21.5
21
4
6
8
10
12
14
--16
--28 --24
P
--20
4
4
--18
--26 --22
8
6
2
E
10
6
2
--14
--30
12
2
2
4
6
8
10
12
14
REAL ()
REAL ()
Figure 10. P1dB Load Pull Gain Contours (dB)
Figure 11. P1dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT27S006NT1
8
RF Device Data
NXP Semiconductors
16
16
14
14
12
12
E
IMAGINARY ()
IMAGINARY ()
P3dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz
10
38
8
6
4
2
37.5
39
37
38.5
36
2
P
40
66
10
62
60
64
58
8
P
56
6
39.5
54
52
4
36.5
4
68 E
6
8
12
10
2
14
4
2
6
8
12
10
14
REAL ()
REAL ()
Figure 12. P3dB Load Pull Output Power Contours (dBm)
Figure 13. P3dB Load Pull Efficiency Contours (%)
16
16
22
21.5
14
22.5
12
E
21
20.5
20
10
19.5
8
P
19
6
2
4
6
8
10
12
--22
--34 --30
12
--36
E
--28 --26
10
--32
--38
8
--24
P
6
18.5
4
2
IMAGINARY ()
IMAGINARY ()
14
4
14
2
2
4
6
8
10
12
14
REAL ()
REAL ()
Figure 14. P3dB Load Pull Gain Contours (dB)
Figure 15. P3dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT27S006NT1
RF Device Data
NXP Semiconductors
9
2500--2700 MHz
VGG
VDD
C14
C4
C3
C1
C5
R1
C9
C7 C8
C13
Q1
C15
C2
C6
C10 C11
C12
AFT27S006N
Rev. 2
2300MHz/2500MHz
D53818
VDD
NOTE: All data measured in fixture with device soldered to heatsink.
Figure 16. AFT27S006NT1 Test Circuit Component Layout — 2500--2700 MHz
Table 10. AFT27S006NT1 Test Circuit Component Designations and Values — 2500--2700 MHz
Part
Description
Part Number
Manufacturer
C1
8.2 pF Chip Capacitor
GQM2195C2E8R2CB12D
Murata
C2
7.5 pF Chip Capacitor
GQM2195C2E7R5CB12D
Murata
C3
8.2 pF Chip Capacitor
ATC100B8R2BT500XT
ATC
C4, C7, C8, C9, C10, C11, C12
10 F, Chip Capacitors
GRM32E61H106KA12L
Murata
C5, C6
7.5 pF Chip Capacitors
ATC100B7R5BT500XT
ATC
C13
1.0 pF Chip Capacitor
ATC100B1R0BT500XT
ATC
C14
220 F, 50 V Electrolytic Capacitor
227CKS050M
Illinois Capacitor
C15
0.7 pF Chip Capacitor
ATC100B0R7BT500XT
ATC
Q1
RF Power LDMOS Transistor
AFT27S006N
NXP
R1
4.75 , 1/4 W Chip Resistor
CRCW12064R75FNEA
Vishay
PCB
Rogers RO4350B, 0.020, r = 3.66
D53818
MTL
AFT27S006NT1
10
RF Device Data
NXP Semiconductors
23
Gps, POWER GAIN (dB)
22
D
20
Gps
22
21
20
PARC
19
18
VDD = 28 Vdc, Pout = 28.8 dBm (Avg.)
IDQ = 70 mA, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
18
16
2540
2570
--4
--43
IRL
2510
--40
--42
16
15
2480
0
--41
ACPR
17
--39
2600
2630
2660
2690
--44
2720
--8
--12
--16
--20
0
--0.4
--0.8
--1.2
--1.6
PARC (dB)
24
IRL, INPUT RETURN LOSS (dB)
24
ACPR (dBc)
25
D, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS — 2500--2700 MHz
--2
f, FREQUENCY (MHz)
Figure 17. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 28.8 dBm Avg.
Gps
22
20
2700 MHz
ACPR
18
2600 MHz
16
2600 MHz
2700 MHz
2500 MHz
60
--10
50
--20
40
30
20
2700 MHz
10
D
14
0
1
0.3
--30
--40
--50
ACPR (dBc)
Gps, POWER GAIN (dB)
VDD = 28 Vdc, IDQ = 70 mA, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth, Input Signal
24 PAR = 9.9 dB @ 0.01% Probability on CCDF
D, DRAIN EFFICIENCY (%)
26
--60
--70
10
Pout, OUTPUT POWER (WATTS) AVG.
Figure 18. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
24
5
Gain
0
20
--5
18
--10
16
14
12
2480
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 70 mA
2520
2560
IRL (dB)
GAIN (dB)
22
--15
IRL
--20
2600
2640
2680
2720
2760
--25
2800
f, FREQUENCY (MHz)
Figure 19. Broadband Frequency Response
AFT27S006NT1
RF Device Data
NXP Semiconductors
11
2300--2400 MHz
VDD
VGG
C14
C9
C7 C8
C4
C3
C5
C1
R1
C13
Q1
C17
C15 C16
C2
C6
C10 C11
C12
AFT27S006N
Rev. 2
2300MHz/2500MHz
D53818
VDD
NOTE: All data measured in fixture with device soldered to heatsink.
Figure 20. AFT27S006NT1 Test Circuit Component Layout — 2300--2400 MHz
Table 11. AFT27S006NT1 Test Circuit Component Designations and Values — 2300--2400 MHz
Part
Description
Part Number
Manufacturer
C1
8.2 pF Chip Capacitor
GQM2195C2E8R2CB12D
Murata
C2
7.5 pF Chip Capacitor
GQM2195C2E7R5CB12D
Murata
C3
8.2 pF Chip Capacitor
ATC100B8R2BT500XT
ATC
C4, C7, C8, C9, C10, C11,
C12
10 F Chip Capacitors
GRM32E61H106KA12L
Murata
C5, C6
7.5 pF Chip Capacitors
ATC100B7R5BT500XT
ATC
C13
1.0 pF Chip Capacitor
ATC100B1R0BT500XT
ATC
C14
220 F, 50 V Electrolytic Capacitor
227CKS050M
Illinois Capacitor
C15
0.8 pF Chip Capacitor
ATC100B0R8CT500XT
ATC
C16
1.5 pF Chip Capacitor
ATC100B1R5CT500XT
ATC
C17
1.2 pF Chip Capacitor
ATC100B1R2CT500XT
ATC
Q1
RF Power LDMOS Transistor
AFT27S006N
NXP
R1
4.75 , 1/4 W Chip Resistor
CRCW12064R75FNEA
Vishay
PCB
Rogers RO4350B, 0.020, r = 3.66
D53818
MTL
AFT27S006NT1
12
RF Device Data
NXP Semiconductors
TYPICAL CHARACTERISTICS — 2300--2400 MHz
22
23.4
21
23.2
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
Gps
23
22.8
22.6
20
IRL
PARC
22.4
--40
--9
--40.2
--13
--40.4
--40.6
ACPR
--40.8
22.2
22
2290
2305
2320
2335 2350 2365
f, FREQUENCY (MHz)
2380
2395
--17
--21
--25
--29
--41
2410
0
--0.2
--0.4
--0.6
--0.8
PARC (dB)
23
D
ACPR (dBc)
Gps, POWER GAIN (dB)
D, DRAIN
EFFICIENCY (%)
24
V = 28 Vdc, Pout = 28.8 dBm (Avg.)
23.8 DD
IDQ = 70 mA, Single--Carrier W--CDMA
23.6
IRL, INPUT RETURN LOSS (dB)
24
--1
Figure 21. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 28.8 dBm Avg.
2400 MHz
2350 MHz
Gps
23
2300 MHz
22
21
--20
30
2300 MHz
2350 MHz
2400 MHz
20
10
Input Signal = 9.9 dB @ 0.01%
Probability on CCDF
0.3
50
40
D
19
--10
2400 MHz
ACPR
20
60
0
--40
--50
--60
--70
10
1
--30
ACPR (dBc)
Gps, POWER GAIN (dB)
24
VDD = 28 Vdc, IDQ = 70 mA, Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth
D, DRAIN EFFICIENCY (%)
25
Pout, OUTPUT POWER (WATTS) AVG.
Figure 22. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
30
5
0
Gain
20
--5
15
--10
--15
10
5
0
2050
IRL (dB)
GAIN (dB)
25
IRL
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 70 mA
2150
--20
2250
2350
2450
2550
--25
2650
f, FREQUENCY (MHz)
Figure 23. Broadband Frequency Response
AFT27S006NT1
RF Device Data
NXP Semiconductors
13
Table 12. Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, IDQ = 67 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
8.27 + j7.08
21.4
39.1
8
56.9
--14
0.915 + j0.365
8.19 + j6.26
20.7
39.3
8
56.2
--15
1.00 + j0.405
6.75 + j5.85
20.8
39.0
8
56.5
--14
0.983 -- j1.95
0.793 + j2.06
7.30 + j5.57
20.0
39.5
9
57.6
--16
1.47 -- j1.30
1.32 + j1.75
6.16 + j5.48
20.1
39.1
8
58.9
--11
f
(MHz)
Zsource
()
Zin
()
2300
1.12 + j0.579
0.964 - j0.336
2400
1.06 -- j0.483
2500
1.01 -- j0.337
2600
2690
Zload
()
(1)
Max Output Power
P3dB
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
10.0 + j6.49
19.0
39.9
10
56.0
--20
0.831 + j0.588
9.48 + j5.93
18.5
40.0
10
55.6
--22
1.05 + j0.711
8.55 + j5.79
18.6
39.9
10
57.3
--21
0.983 -- j1.95
0.633 + j2.21
8.30 + j5.44
17.9
40.2
10
57.5
--23
1.47 -- j1.30
1.40 + j2.16
7.60 + j5.25
17.8
40.0
10
58.8
--17
f
(MHz)
Zsource
()
Zin
()
2300
1.12 + j0.579
0.908 - j0.0973
2400
1.06 -- j0.483
2500
1.01 -- j0.337
2600
2690
Zload
()
(2)
(1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 13. Load Pull Performance — Maximum Drain Efficiency Tuning
VDD = 28 Vdc, IDQ = 67 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
2300
1.12 + j0.579
0.833 -- j0.40
5.09 + j10.3
23.4
37.6
6
63.8
--20
2400
1.06 -- j0.483
0.805 + j0.29
5.09 + j9.23
22.5
38.0
6
62.8
--22
2500
1.01 -- j0.337
0.835 + j0.341
4.51 + j8.31
22.6
37.9
6
63.1
--19
2600
0.983 -- j1.95
0.755 + j1.96
4.88 + j7.74
21.3
38.7
7
63.3
--21
2690
1.47 -- j1.30
1.08 + j1.64
4.12 + j7.31
21.7
38.2
7
64.6
--17
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
Max Drain Efficiency
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2300
1.12 + j0.579
0.807 -- j0.161
5.41 + j10.0
21.1
38.5
7
63.2
--29
2400
1.06 -- j0.483
0.77 + j0.525
6.38 + j9.17
20.2
39.1
8
61.6
--26
2500
1.01 -- j0.337
0.921 + j0.637
5.16 + j8.53
20.5
38.8
8
63.4
--27
2600
0.983 -- j1.95
0.608 + j2.13
5.61 + j7.84
19.3
39.4
9
62.7
--28
2690
1.47 -- j1.30
1.18 + j2.01
4.38 + j7.31
19.6
38.8
8
64.8
--25
(1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
AFT27S006NT1
14
RF Device Data
NXP Semiconductors
P1dB -- TYPICAL LOAD PULL CONTOURS — 2500 MHz
16
16
35.5
35
14
37
12
12
38
37.5
10
IMAGINARY ()
14
IMAGINARY ()
36 36.5
38.5
E
8
6
E
8
62
60
52
56
58
6
P
4
2
10
54
50
P
48
4
2
4
6
8
12
10
2
14
2
4
6
8
12
10
14
REAL ()
Figure 24. P1dB Load Pull Output Power Contours (dBm)
Figure 25. P1dB Load Pull Efficiency Contours (%)
16
16
14
14
12
12
23 22.5
23.5
10
22
21.5
E
8
21
20.5
6
P
4
6
--10
8
--12
--14
10
--22
--18 --16
8
E
--24 --20
6
P
4
19.5
2
--8
20
4
2
IMAGINARY ()
IMAGINARY ()
REAL ()
10
12
14
2
2
4
6
8
10
12
14
REAL ()
REAL ()
Figure 26. P1dB Load Pull Gain Contours (dB)
Figure 27. P1dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT27S006NT1
RF Device Data
NXP Semiconductors
15
P3dB -- TYPICAL LOAD PULL CONTOURS — 2500 MHz
16
14
36
38
12
38.5
12
39
IMAGINARY ()
IMAGINARY ()
14
16
37.5
36.5 37
10
39.5
E
8
6
62
E
8
60
P
56
58
6
4
2
10
50
4
47
2
4
6
8
12
10
2
14
52
54
P
48
2
4
6
8
12
10
14
REAL ()
REAL ()
Figure 28. P3dB Load Pull Output Power Contours (dBm)
Figure 29. P3dB Load Pull Efficiency Contours (%)
16
16
14
14
12
21 20.5
21.5
10
20
18.5
6
P
4
2
19
19.5
E
8
IMAGINARY ()
IMAGINARY ()
--14
4
6
8
12
--20
10
--30
--22
E
8
--28
6
--26
P
--24
18
4
17.5
2
--16
--18
10
12
14
2
2
4
6
8
10
12
14
REAL ()
REAL ()
Figure 30. P3dB Load Pull Gain Contours (dB)
Figure 31. P3dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT27S006NT1
16
RF Device Data
NXP Semiconductors
TYPICAL CHARACTERISTICS —3400--3600 MHz
D
18
14
12
Gps
17.5
17
PARC
16.5
16
15
3380
--43
--6
--45
--46
ACPR
3410
--3
--44
IRL
15.5
--42
3440
3470
3500
3530
3560
--47
3620
3590
--9
--12
--15
--18
--0.6
--0.8
--1
--1.2
--1.4
PARC (dB)
18.5
16
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
IRL, INPUT RETURN LOSS (dB)
Gps, POWER GAIN (dB)
19
18
ACPR (dBc)
VDD = 28 Vdc, Pout = 28.8 dBm (Avg.)
19.5 IDQ = 70 mA, Single--Carrier W--CDMA
D, DRAIN
EFFICIENCY (%)
20
20
--1.6
f, FREQUENCY (MHz)
Figure 32. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 28.8 dBm Avg.
Gps, POWER GAIN (dB)
18
3500 MHz
3400 MHz
--10
50
--20
ACPR
Gps
16
60
D 40
3600 MHz
14
30
3600 MHz 3500 MHz
12
3600 MHz
3500 MHz
3400 MHz
3400 MHz
10
20
10
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
8
0.1
0
10
1
--30
--40
--50
ACPR (dBc)
VDD = 28 Vdc, IDQ = 70 mA, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
D, DRAIN EFFICIENCY (%)
20
--60
--70
Pout, OUTPUT POWER (WATTS) AVG.
Figure 33. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
10
24
5
Gain
GAIN (dB)
18
0
15
--5
12
--10
9
IRL (dB)
21
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 70 mA
--15
IRL
6
3100
3200
3300
3400
3500
3600
3700
3800
--20
3900
f, FREQUENCY (MHz)
Figure 34. Broadband Frequency Response
AFT27S006NT1
RF Device Data
NXP Semiconductors
17
728--768 MHz
VDD
VGG
C15
C14
C11
C10
C5
C6
R1
C1*
C2
C3
C4
C7*
C8
C9*
Q1
C12
C13
D51698
AFT27S006N
Rev. 1
800MHz
C16
C17
VDD
*C1, C7 and C9 are mounted vertically.
NOTE: All data measured in fixture with device soldered to heatsink.
Figure 35. AFT27S006NT1 Test Circuit Component Layout — 728--768 MHz
Table 14. AFT27S006NT1 Test Circuit Component Designations and Values — 728--768 MHz
Part
Description
Part Number
Manufacturer
C5, C10, C11, C12, C13
33 pF Chip Capacitors
ATC100B330JT500XT
ATC
C2
4.7 pF Chip Capacitor
ATC100B4R7JT500XT
ATC
C3
6.8 pF Chip Capacitor
ATC100B6R8JT500XT
ATC
C4, C7
3.9 pF Chip Capacitors
ATC100B3R9JT500XT
ATC
C1, C9
82 pF Chip Capacitors
ATC100B820JT500XT
ATC
C8
0.5 pF Chip Capacitor
ATC100B0R5JT500XT
ATC
C6, C14, C15, C16, C17
10 F Chip Capacitors
GRM32ER61H106KA12L
Murata
Q1
RF Power LDMOS Transistor
AFT27S006N
NXP
R1
10 , 1/4 W Chip Resistor
CRCW120610R0JNEA
Vishay
PCB
Rogers RO4350B, 0.020, r = 3.66
D51698
MTL
AFT27S006NT1
18
RF Device Data
NXP Semiconductors
Gps, POWER GAIN (dB)
24.6
D
24.4
24.2
Gps
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
24
23.8
21
20
19
18
PARC
23.6
--11
--47
IRL
720
--44
--46
23.2
23
710
--9
--45
ACPR
23.4
--43
730
--48
740
750
760
770
780
--13
--15
--17
--19
790
0.1
0.06
0.02
--0.02
--0.06
PARC (dB)
24.8
22
IRL, INPUT RETURN LOSS (dB)
VDD = 28 Vdc, Pout = 28.8 dBm (Avg.)
IDQ = 65 mA, Single--Carrier W--CDMA
ACPR (dBc)
25
D, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS — 728--768 MHz
--0.1
f, FREQUENCY (MHz)
Figure 36. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 28.8 dBm Avg.
20
ACPR
728 MHz
748 MHz
18
10
768 MHz
16
--10
20
768 MHz
728 MHz
50
30
728 MHz
748 MHz
748 MHz
0
40
768 MHz
22
60
D
0
1
0.4
--20
--30
--40
ACPR (dBc)
VDD = 28 Vdc, IDQ = 65 mA, Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth, Input
26 Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
Gps
24
D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
28
--50
--60
10
Pout, OUTPUT POWER (WATTS) AVG.
Figure 37. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
27
0
Gain
23
--5
21
--10
19
IRL (dB)
GAIN (dB)
25
5
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 70 mA
--15
IRL
17
--20
15
600
650
700
750
800
850
900
950
--25
1000
f, FREQUENCY (MHz)
Figure 38. Broadband Frequency Response
AFT27S006NT1
RF Device Data
NXP Semiconductors
19
0.28
7.11
0.165
4.91
0.089
2.26
Solder pad with thermal via
structure. All dimensions in mm.
0.155
3.94
0.085
2.16
Figure 39. PCB Pad Layout for PLD--1.5W
AS06
N( )B
YYWW
Figure 40. Product Marking
AFT27S006NT1
20
RF Device Data
NXP Semiconductors
PACKAGE DIMENSIONS
AFT27S006NT1
RF Device Data
NXP Semiconductors
21
AFT27S006NT1
22
RF Device Data
NXP Semiconductors
AFT27S006NT1
RF Device Data
NXP Semiconductors
23
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Oct. 2013
Initial Release of Data Sheet
1
Nov. 2013
Table 5, Functional Tests table: gain min and max limits improved and typical values updated to reflect
large volume production data, p. 3
Tables 6, 7, 8, 9, Test Circuit Component Designations and Values: updated PCB description to reflect
most current board specifications from Rogers, pp. 4, 10, 12, 17
2
Sept. 2014
Tape and Reel information: corrected tape width information from 13--inch reel to 7--inch reel to reflect
actual reel size, p. 1
Changed operating frequency from 728–2700 MHz to 728–3600 MHz due to expanded device frequency
capability resulting from additional test data, p. 1
3
Nov. 2014
Added 3400--3600 MHz performance information as follows:
-- Typical Frequency Band table, p. 1
-- Fig. 32, Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance
@ Pout = 28.8 dBm Avg., p. 17
-- Fig. 33, Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power, p. 17
-- Fig. 34, Broadband Frequency Response, p. 17
4
Dec. 2015
Table 1, Maximum Ratings: corrected operating junction temperature range upper limit, p. 2
Table 5, Electrical Characteristics, On Characteristics VDS(on): updated ID unit of measure to mAdc to
reflect actual unit of measure, p. 2
Added Ordering Information Table 6, p. 3
5
Dec. 2017
Changed operating frequency from 728–3600 MHz to 728–3700 MHz due to expanded device frequency
capability resulting from additional test data, p. 1
AFT27S006NT1
24
RF Device Data
NXP Semiconductors
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including without limitation consequential or incidental damages. “Typical” parameters
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E 2013–2015, 2017 NXP B.V.
AFT27S006NT1
Document
Number:
RF
Device
Data AFT27S006N
Rev. 5,Semiconductors
12/2017
NXP
25
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