BAP50-02

BAP50-02 General purpose PIN diode Rev. 02 — 3 January 2008 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification General purpose PIN diode FEATURES • Low diode capacitance • Low diode forward resistance. APPLICATIONS • General RF applications. DESCRIPTION General purpose PIN diode in a SOD523 small SMD plastic package. handbook, halfpage BAP50-02 PINNING PIN DESCRIPTION cathode anode Marking code: K4. Fig.1 Simplified outline (SOD523) and symbol.  2 1 2 Top view 1 MAM405 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR IF Ptot Tstg Tj PARAMETER continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature Ts = 90 °C CONDITIONS − − − −65 −65 MIN. MAX. 50 50 715 +150 +150 UNIT V mA mW °C °C Rev. 02 - 3 January 2008 2 of 7 NXP Semiconductors Product specification General pur pose PIN diode ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF VR IR Cd PARAMETER forward voltage reverse voltage reverse current diode capacitance CONDITIONS IF = 50 mA IR = 10 µA VR = 50 V VR = 0; f = 1 MHz VR = 1 V; f = 1 MHz VR = 5 V; f = 1 MHz rD diode forward resistance IF = 0.5 mA; f = 100 MHz; note 1 IF = 1 mA; f = 100 MHz; note 1 IF = 10 mA; f = 100 MHz; note 1 |s21|2 isolation VR = 0; f = 900 MHz VR = 0; f = 1800 MHz VR = 0; f = 2450 MHz |s21|2 inser tion loss IF = 0.5 mA; f = 900 MHz IF = 0.5 mA; f = 1800 MHz IF = 0.5 mA; f = 2450 MHz |s21|2 inser tion loss IF = 1 mA; f = 900 MHz IF = 1 mA; f = 1800 MHz IF = 1 mA; f = 2450 MHz |s21|2 inser tion loss IF = 10 mA; f = 900 MHz IF = 10 mA; f = 1800 MHz IF = 10 mA; f = 2450 MHz τL charge carrier life time MIN. − 50 − − − − − − − − − − − − − − − − − − − TYP. 0.95 − − 0.4 0.3 0.22 25 14 3 20.4 17.3 15.5 1.74 1.79 1.88 1.03 1.09 1.15 0.26 0.32 0.34 1.05 BAP50-02 MAX. 1.1 − 100 − 0.55 0.35 40 25 5 − − − − − − − − − − − − − UNIT V V nA pF pF pF Ω Ω Ω dB dB dB dB dB dB dB dB dB dB dB dB µs when switched from IF = 10 mA to − IR = 6 mA; RL = 100 Ω; measured at IR = 3 mA IF = 100 mA; f = 100 MHz − LS Note series inductance 0.6 − nH 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point VALUE 85 UNIT K/W Rev. 02 - 3 January 2008 3 of 7 NXP Semiconductors Product specification General pur pose PIN diode GRAPHICAL DATA BAP50-02 103 handbook, halfpage rD (Ω) 102 MLD601 handbook, halfpage 600 MLD602 Cd (fF) 400 10 200 1 10−1 1 10 IF (mA) 102 0 0 4 8 12 16 VR (V) 20 f = 100 MHz; Tj = 25 °C. f = 1 MHz; Tj = 25 °C. Fig.2 Forward resistance as a function of forward current; typical values. Fig.3 Diode capacitance as a function of reverse voltage; typical values. handbook, halfpage s2 0 MLD603 21 (dB) −1 (1) handbook, halfpage s2 0 MLD604 21 (dB) −5 (2) −2 (3) −10 −3 −15 −4 −20 −5 0.5 1 1.5 2 2.5 f (GHz) 3 −25 0.5 1 1.5 2 2.5 f (GHz) 3 (1) IF = 10 mA. (2) IF = 1 mA. (3) IF = 0.5 mA. Diode zero biased and inserted in series with a 50 Ω stripline circuit. Tamb = 25 °C. Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network. Tamb = 25 °C. Fig.4 Insertion loss |s21|2 of the diode in on-state as a function of frequency; typical values. Fig.5 Isolation (|s21|2) of the diode in off-state as a function of frequency; typical values. Rev. 02 - 3 January 2008 4 of 7 NXP Semiconductors Product specification General pur pose PIN diode PACKAGE OUTLINE BAP50-02 Plastic surface-mounted package; 2 leads SOD523 A c HE vMA D A 0 0.5 scale 1 mm 1 E bp 2 DIMENSIONS (mm are the original dimensions) UNIT mm A 0.65 0.58 bp 0.34 0.26 c 0.17 0.11 D 1.25 1.15 E 0.85 0.75 HE 1.65 1.55 v 0.1 (1) Note 1. The marking bar indicates the cathode. OUTLINE VERSION SOD523 REFERENCES IEC JEDEC JEITA SC-79 EUROPEAN PROJECTION ISSUE DATE 02-12-13 06-03-16 Rev. 02 - 3 January 2008 5 of 7 NXP Semiconductors BAP50-02 General purpose PIN diode Legal information Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. 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Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com Rev. 02 - 3 January 2008 6 of 7 NXP Semiconductors BAP50-02 General purpose PIN diode Revision history Revision history Document ID BAP50-02_N_2 Modifications: BAP50-02_1 (9397 750 08113) Release date 20080103 Data sheet status Product data sheet Product specification Change notice Supersedes BAP50-02_1 - • Package outline drawing on page 5 changed 20010417 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 3 January 2008 Document identifier: BAP50-02_N_2