BAP70AM

BAP70AM Silicon PIN diode array Rev. 01 — 20 November 2006 Product data sheet 1. Product profile 1.1 General description Four planar PIN diode array in SOT363 small SMD plastic package. 1.2 Features I I I I High voltage current controlled RF resistor for RF attenuators Low diode capacitance Very low series inductance Low distortion 1.3 Applications I RF attenuators I (SAT) TV applications I Car radio applications 2. Pinning information Table 1. Pin 1 2 3 4 5 6 Discrete pinning Description anode diode 1 cathode diode 2 anode diode 3 / cathode diode 4 anode diode 4 cathode diode 3 anode diode 2 / cathode diode 1 1 2 3 1 2 3 sym118 Simplified outline 6 5 4 Symbol 6 5 4 3. Ordering information Table 2. Ordering information Name BAP70AM Description plastic surface-mounted package; 6 leads Version SOT363 Type number Package NXP Semiconductors BAP70AM Silicon PIN diode array 4. Marking Table 3. BAP70AM Marking Marking code N9 Type number 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VR IF Ptot Tstg Tj Parameter reverse voltage forward current total power dissipation storage temperature junction temperature Tsp = 90 °C Conditions Min −65 −65 Max 50 100 300 +150 +150 Unit V mA mW °C °C 6. Thermal characteristics Table 5. Symbol Rth(j-sp) Thermal characteristics Parameter thermal resistance from junction to solder point Conditions Typ 260 Unit K/W BAP70AM_1 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 November 2006 2 of 7 NXP Semiconductors BAP70AM Silicon PIN diode array 7. Characteristics Table 6. Characteristics Tamb = 25 °C unless otherwise specified. Symbol VF IR Cd Parameter forward voltage reverse current diode capacitance Conditions IF = 50 mA VR = 50 V see Figure 1; f = 1 MHz; VR = 0 V VR = 1 V VR = 5 V VR = 20 V rD diode forward resistance see Figure 2; f = 100 MHz; IF = 0.5 mA IF = 1 mA IF = 10 mA IF = 100 mA τL charge carrier life time when switched from IF = 10 mA to IR = 6 mA; RL = 100 Ω; measured at IR = 3 mA IF = 100 mA; f = 100 MHz Min 77 40 5.4 1.4 1.25 100 50 7 1.9 Ω Ω Ω Ω µs 570 400 270 200 250 fF fF fF fF Typ 0.9 Max 1.1