BAS16VY

BAS16VV; BAS16VY Triple high-speed switching diodes Rev. 03 — 20 April 2007 Product data sheet 1. Product profile 1.1 General description Triple high-speed switching diodes, encapsulated in very small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Package NXP BAS16VV BAS16VY SOT666 SOT363 JEITA SC-88 triple isolated Configuration Type number 1.2 Features I High switching speed: trr ≤ 4 ns I Low leakage current I Reverse voltage: VR ≤ 100 V I Very small SMD plastic packages 1.3 Applications I High-speed switching I General-purpose switching I Voltage clamping I Reverse polarity protection 1.4 Quick reference data Table 2. Symbol Per diode IF VR trr [1] Quick reference data Parameter forward current reverse voltage reverse recovery time [1] Conditions Min - Typ - Max 200 100 4 Unit mA V ns When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. NXP Semiconductors BAS16VV; BAS16VY Triple high-speed switching diodes 2. Pinning information Table 3. Pin 1 2 3 4 5 6 Pinning Description anode (diode 1) anode (diode 2) anode (diode 3) cathode (diode 3) cathode (diode 2) cathode (diode 1) 1 1 2 3 001aab555 Simplified outline 6 5 4 Symbol 6 5 4 2 3 sym043 3. Ordering information Table 4. Ordering information Package Name BAS16VV BAS16VY SC-88 Description plastic surface-mounted package; 6 leads plastic surface-mounted package; 6 leads Version SOT666 SOT363 Type number 4. Marking Table 5. BAS16VV BAS16VY [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China Marking codes Marking code[1] 53 16* Type number BAS16VV_BAS16VY_3 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 20 April 2007 2 of 12 NXP Semiconductors BAS16VV; BAS16VY Triple high-speed switching diodes 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per diode VRRM VR IF IFRM IFSM repetitive peak reverse voltage reverse voltage forward current repetitive peak forward current non-repetitive peak forward current square wave tp = 1 µs tp = 1 ms tp = 1 s Ptot total power dissipation BAS16VV BAS16VY Per device Tj Tamb Tstg [1] [2] [3] [1] Parameter Conditions Min [2] [3] Max 100 100 200 450 4.5 1 0.5 180 250 150 +150 +150 Unit V V mA mA A A A mW mW °C °C °C Tamb ≤ 25 °C Tsp = 85 °C −65 −65 junction temperature ambient temperature storage temperature Tj = 25 °C prior to surge. Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Soldering points at pins 4, 5 and 6. 6. Thermal characteristics Table 7. Symbol Per diode Rth(j-a) thermal resistance from junction to ambient BAS16VV Rth(j-sp) thermal resistance from junction to solder point BAS16VY [1] [2] [3] [4] Reflow soldering is the only recommended soldering method. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. Soldering points at pins 4, 5 and 6. [4] Thermal characteristics Parameter Conditions in free air [1] Min Typ Max Unit [2] [3] - - 700 410 K/W K/W - - 260 K/W BAS16VV_BAS16VY_3 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 20 April 2007 3 of 12 NXP Semiconductors BAS16VV; BAS16VY Triple high-speed switching diodes 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Per diode VF forward voltage IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA IR reverse current VR = 25 V VR = 75 V VR = 25 V; Tj = 150 °C VR = 75 V; Tj = 150 °C Cd trr VFR [1] [2] [3] [1] Conditions Min Typ Max Unit [2] [3] - 715 855 1 1.25 30 1 30 50 1.5 4 1.75 mV mV V V nA µA µA µA pF ns V diode capacitance reverse recovery time forward recovery voltage Pulse test: tp ≤ 300 µs; δ ≤ 0.02. VR = 0 V; f = 1 MHz - When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. When switched from IF = 10 mA; tr = 20 ns. BAS16VV_BAS16VY_3 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 20 April 2007 4 of 12 NXP Semiconductors BAS16VV; BAS16VY Triple high-speed switching diodes 300 IF (mA) (1) (2) (3) mbg382 10 mgw103 I FSM (A) 200 1 100 0 0 1 VF (V) 2 10−1 1 10 102 103 t p (µs) 104 (1) Tamb = 150 °C; typical values (2) Tamb = 25 °C; typical values (3) Tamb = 25 °C; maximum values Based on square wave currents. Tj = 25 °C; prior to surge Fig 1. Forward current as a function of forward voltage mga884 Fig 2. Non-repetitive peak forward current as a function of pulse duration; maximum values mbg446 105 0.8 Cd (pF) IR (nA) 104 (1) 0.6 103 (2) 0.4 (3) 102 0.2 10 0 0 100 Tj (°C) 200 0 4 8 12 VR (V) 16 (1) VR = 75 V; maximum values (2) VR = 75 V; typical values (3) VR = 25 V; typical values f = 1 MHz; Tamb = 25 °C Fig 3. Reverse current as a function of junction temperature Fig 4. Diode capacitance as a function of reverse voltage; typical values BAS16VV_BAS16VY_3 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 20 April 2007 5 of 12 NXP Semiconductors BAS16VV; BAS16VY Triple high-speed switching diodes 8. Test information tr D.U.T. RS = 50 Ω V = VR + IF × RS IF SAMPLING OSCILLOSCOPE Ri = 50 Ω VR mga881 tp t 10 % + IF trr t 90 % input signal output signal (1) (1) IR = 1 mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05 Oscilloscope: rise time tr = 0.35 ns Fig 5. Reverse recovery time test circuit and waveforms I 1 kΩ 450 Ω I 90 % V RS = 50 Ω D.U.T. OSCILLOSCOPE Ri = 50 Ω 10 % t tr tp input signal VFR t output signal mga882 Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty cycle δ ≤ 0.005 Fig 6. Forward recovery voltage test circuit and waveforms BAS16VV_BAS16VY_3 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 20 April 2007 6 of 12 NXP Semiconductors BAS16VV; BAS16VY Triple high-speed switching diodes 9. Package outline 2.2 1.8 6 0.3 0.1 1.7 1.5 1.3 1.1 pin 1 index 2.2 1.35 2.0 1.15 pin 1 index 5 4 0.45 0.15 1.1 0.8 1.7 1.5 6 5 4 0.6 0.5 1 0.5 1 Dimensions in mm 2 3 0.27 0.17 0.18 0.08 04-11-08 Dimensions in mm 1 0.65 1.3 2 3 0.3 0.2 0.25 0.10 06-03-16 Fig 7. Package outline SOT666 Fig 8. Package outline SOT363 (SC-88) 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number BAS16VV BAS16VY Package SOT666 SOT363 Description 2 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2 [1] [2] [3] [2] [3] Packing quantity 3000 4000 8000 10000 -115 -125 -115 -315 -135 -165 For further information and the availability of packing methods, see Section 14. T1: normal taping T2: reverse taping BAS16VV_BAS16VY_3 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 20 April 2007 7 of 12 NXP Semiconductors BAS16VV; BAS16VY Triple high-speed switching diodes 11. Soldering 2.75 2.45 2.10 1.60 0.15 (4×) 0.40 (6×) 2.00 1.70 1.00 0.55 (2×) 0.30 (2×) 0.375 (4×) 1.20 2.20 2.50 solder lands placement area occupied area 0.075 solder resist Dimensions in mm Reflow soldering is the only recommended soldering method. Fig 9. Reflow soldering footprint SOT666 BAS16VV_BAS16VY_3 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 20 April 2007 8 of 12 NXP Semiconductors BAS16VV; BAS16VY Triple high-speed switching diodes 2.65 0.60 (2×) 2.35 solder lands solder paste solder resist occupied area Dimensions in mm 0.50 (4×) 0.50 (4×) 0.40 0.90 2.10 (2×) 1.20 2.40 sot363 Fig 10. Reflow soldering footprint SOT363 (SC-88) 5.25 4.50 0.30 1.00 4.00 solder lands solder resist occupied area 1.15 3.75 transport direction during soldering sot363 Dimensions in mm Fig 11. Wave soldering footprint SOT363 (SC-88) BAS16VV_BAS16VY_3 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 20 April 2007 9 of 12 NXP Semiconductors BAS16VV; BAS16VY Triple high-speed switching diodes 12. Revision history Table 10. Revision history Release date 20070420 Data sheet status Product data sheet Change notice Supersedes BAS16VV_BAS16VY_2 Document ID BAS16VV_BAS16VY_3 Modifications: • • • • • • • • • • • • • • • • • • • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Table 2 “Quick reference data”: indication per diode added Table 2 “Quick reference data”: Table note 1 for trr added Table 5 “Marking codes”: enhanced table note section Table 6 “Limiting values”: Table note 3 amended Table 7 “Thermal characteristics”: indication per diode added Table 7 “Thermal characteristics”: Rth(j-s) thermal resistance from junction to soldering point redefined to Rth(j-sp) thermal resistance from junction to solder point Table 7 “Thermal characteristics”: Table note 2, 3 and 4 amended Table 8 “Characteristics”: Table note 1 for VF added Figure 2: figure title amended Figure 4: Tj junction temperature redefined to Tamb ambient temperature Figure 5: figure title and figure note amended Figure 6: figure note amended Figure 7 and 8: superseded by minimized package outline drawings Table 9 “Packing methods”: packing method for SOT666 added Table 9 “Packing methods”: enhanced table note section Section 11 “Soldering”: added Section 13 “Legal information”: updated Product data sheet Product specification BAS16VY_1 - BAS16VV_BAS16VY_2 BAS16VY_1 20040910 20030408 BAS16VV_BAS16VY_3 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 20 April 2007 10 of 12 NXP Semiconductors BAS16VV; BAS16VY Triple high-speed switching diodes 13. Legal information 13.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com BAS16VV_BAS16VY_3 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 20 April 2007 11 of 12 NXP Semiconductors BAS16VV; BAS16VY Triple high-speed switching diodes 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packing information. . . . . . . . . . . . . . . . . . . . . . 7 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 20 April 2007 Document identifier: BAS16VV_BAS16VY_3