BAS216

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D154 BAS216 High-speed switching diode Product data sheet Supersedes data of 1999 Apr 22 2002 May 28 NXP Semiconductors Product data sheet High-speed switching diode FEATURES • Small ceramic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA. APPLICATIONS • High-speed switching in e.g. surface mounted circuits. bottom view Marking code: A6. BAS216 DESCRIPTION The BAS216 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD110 very small rectangular ceramic SMD package. handbook, 4 columns cathode mark k k a a side view top view MAM139 Fig.1 Simplified outline (SOD110) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 °C; see Fig.2; note 1 − − − − −65 − 4 1 0.5 400 +150 150 A A A mW °C °C note 1 CONDITIONS − − − − MIN. MAX. 85 75 250 500 V V mA mA UNIT 2002 May 28 2 NXP Semiconductors Product data sheet High-speed switching diode ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage see Fig.3 I F = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA IR reverse current see Fig.5 VR = 2 5 V VR = 7 5 V VR = 25 V; Tj = 150 °C VR = 75 V; Tj = 150 °C Cd trr diode capacitance reverse recovery time f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 when switched from IF = 10 mA; tr = 20 ns; see Fig.8 − − − − − − 30 1 30 50 1.5 4 − − − − 715 855 1 1.25 CONDITIONS MIN. BAS216 MAX. UNIT mV mV V V nA µA µA µA pF ns Vfr forward recovery voltage − 1.75 V THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS VALUE 200 315 UNIT K/W K/W 2002 May 28 3 NXP Semiconductors Product data sheet High-speed switching diode GRAPHICAL DATA MSA570 BAS216 500 handbook, halfpage 300 MBG382 P tot (mW) IF (mA) (1) (2) (3) 200 250 100 0 0 100 Tamb ( o C) 200 0 0 1 VF (V) 2 Device mounted on an FR4 printed-circuit board. (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Fig.2 Maximum permissible total power dissipation as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. 102 handbook, full pagewidth IFSM (A) MBG704 10 1 10−1 1 Based on square wave currents. Tj = 25 °C prior to surge. 10 102 103 tp (µs) 104 Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 2002 May 28 4 NXP Semiconductors Product data sheet High-speed switching diode BAS216 10 5 IR (nA) 10 4 MSA563 handbook, halfpage 0.6 MBH285 Cd (pF) V R = 75 V 0.5 75 V 10 3 0.4 10 2 25 V 0.2 10 0 100 T j ( o C) 200 0 0 4 8 12 V (V) 16 R Dotted line: maximum values. Solid lines: typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Reverse current as a function of junction temperature. Fig.6 Diode capacitance as a function of reverse voltage; typical values. 2002 May 28 5 NXP Semiconductors Product data sheet High-speed switching diode BAS216 handbook, full pagewidth tr D.U.T. 10% SAMPLING OSCILLOSCOPE R i = 50 Ω VR 90% tp t RS = 50 Ω V = VR I F x R S IF IF t rr t (1) MGA881 input signal output signal (1) IR = 1 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω I 90% V R S = 50 Ω D.U.T. OSCILLOSCOPE R i = 50 Ω 10% MGA882 V fr t tr tp t input signal output signal Fig.8 Forward recovery voltage test circuit and waveforms. 2002 May 28 6 NXP Semiconductors Product data sheet High-speed switching diode PACKAGE OUTLINE BAS216 Very small ceramic rectangular surface mounted package D E SOD110 A y cathode identifier DIMENSIONS (mm are the original dimensions) 1 2 0 0.5 scale 1 mm UNIT mm A max. 1.6 D 2.10 1.90 E 1.40 1.10 y 0.1 OUTLINE VERSION SOD110 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-14 2002 May 28 7 NXP Semiconductors Product data sheet High-speed switching diode DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes 1. Please consult the most recently issued document before initiating or completing a design. PRODUCT STATUS(2) Development Qualification Production DEFINITION BAS216 This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2002 May 28 8 above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/05/pp9 Date of release: 2002 May 28 Document order number: 9397 750 09729