BAS29

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BAS29; BAS31; BAS35 General purpose controlled avalanche (double) diodes Product data sheet Supersedes data of 2001 Oct 10 2003 Mar 20 NXP Semiconductors Product data sheet General purpose controlled avalanche (double) diodes FEATURES • Small plastic SMD package • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 90 V • Repetitive peak reverse voltage: max. 110 V • Repetitive peak forward current: max. 600 mA • Repetitive peak reverse current: max. 600 mA. APPLICATIONS • General purpose switching in e.g. surface mounted circuits. DESCRIPTION General purpose switching diodes fabricated in planar technology, and encapsulated in small rectangular plastic SMD SOT23 packages. The BAS29 consists of a single diode. The BAS31 has two diodes in series. The BAS35 has two diodes with a common anode. MARKING 3 handbook, halfpage 2 BAS29; BAS31; BAS35 PINNING DESCRIPTION PIN BAS29 1 2 3 anode cathode BAS31 anode common connection BAS35 cathode (k1) cathode (k2) common anode not connected cathode 1 2 3 3 a. Simplified outline. c. BAS31 diode. 1 2 n.c. 1 2 3 d. BAS35 diode. 1 TYPE NUMBER BAS29 BAS31 BAS35 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W : Made in China. MARKING CODE(1) L20 or ∗A8 L21 or ∗V1 L22 or ∗V2 b. BAS29 diode. MAM233 Fig.1 Simplified outline (SOT23) and symbols. 2003 Mar 20 2 NXP Semiconductors Product data sheet General purpose controlled avalanche (double) diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode VRRM VR IF repetitive peak reverse voltage continuous reverse voltage continuous forward current PARAMETER CONDITIONS BAS29; BAS31; BAS35 MIN. − − MAX. UNIT 110 90 250 150 600 V V mA mA mA single diode loaded; see Fig.2; note 1 double diode loaded; see Fig.2; note 1 − − − IFRM IFSM repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 100 µs t=1s − − − − − − −65 − 10 4 0.75 250 600 5 +150 150 A A A mW mA mJ °C °C Ptot IRRM ERRM Tstg Tj Note total power dissipation repetitive peak reverse current repetitive peak reverse energy storage temperature junction temperature Tamb = 25 °C; note 1 tp ≥ 50 µs; f ≤ 20 Hz; Tj = 25 °C 1. Device mounted on an FR4 printed-circuit board. 2003 Mar 20 3 NXP Semiconductors Product data sheet General purpose controlled avalanche (double) diodes ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL Per diode VF forward voltage see Fig.3 IF = 10 mA IF = 50 mA IF = 100 mA IF = 200 mA IF = 400 mA IR reverse current see Fig.5 VR = 9 0 V VR = 90 V; Tj = 150 °C V(BR)R Cd trr reverse avalanche breakdown voltage diode capacitance reverse recovery time IR = 1 mA f = 1 MHz; VR = 0; see Fig.6 PARAMETER CONDITIONS BAS29; BAS31; BAS35 MIN. MAX. UNIT − − − − − − − 120 − − 750 840 900 1 1.25 100 100 170 35 50 mV mV mV V V nA µA V pF ns when switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA; see Fig.7 THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS VALUE 360 500 UNIT K/W K/W 2003 Mar 20 4 NXP Semiconductors Product data sheet General purpose controlled avalanche (double) diodes GRAPHICAL DATA MBG440 BAS29; BAS31; BAS35 handbook, halfpage 300 handbook, halfpage 600 MBH280 IF (mA) 200 (1) IF (mA) 400 (1) (2) (3) 100 (2) 200 0 0 100 Tamb (oC) 200 0 0 1 VF (V) 2 Device mounted on an FR4 printed-circuit board. (1) Single diode loaded. (2) Double diode loaded. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Fig.3 Forward current as a function of forward voltage. 102 handbook, full pagewidth IFSM (A) MBH327 10 1 10−1 1 Based on square wave currents. Tj = 25 °C prior to surge. 10 102 103 tp (µs) 104 Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 2003 Mar 20 5 NXP Semiconductors Product data sheet General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35 102 handbook, halfpage IR (µA) 10 MBH282 MGD003 handbook, halfpage 40 Cd (pF) 30 1 (1) (2) 20 10−1 10 10−2 0 100 Tj (oC) 200 0 0 10 20 VR (V) 30 (1) VR = 90 V; maximum values. (2) VR = 90 V; typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Reverse current as a function of junction temperature. Fig.6 Diode capacitance as a function of reverse voltage; typical values. handbook, full pagewidth tr D.U.T. 10% SAMPLING OSCILLOSCOPE R i = 50 Ω VR 90% tp t RS = 50 Ω V = VR I F x R S IF IF t rr t (1) MGA881 input signal output signal (1) IR = 3 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. 2003 Mar 20 6 NXP Semiconductors Product data sheet General purpose controlled avalanche (double) diodes PACKAGE OUTLINE BAS29; BAS31; BAS35 Plastic surface mounted package; 3 leads SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC TO-236AB EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 2003 Mar 20 7 NXP Semiconductors Product data sheet General purpose controlled avalanche (double) diodes DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes PRODUCT STATUS(2) Development Qualification Production BAS29; BAS31; BAS35 DEFINITION This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. 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Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 2003 Mar 20 8 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/05/pp9 Date of release: 2003 Mar 20 Document order number: 9397 750 10962