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BAS521

BAS521

  • 厂商:

    NXP(恩智浦)

  • 封装:

  • 描述:

    BAS521 - High voltage switching diode - NXP Semiconductors

  • 数据手册
  • 价格&库存
BAS521 数据手册
DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAS521 High voltage switching diode Product data sheet 2003 Aug 12 NXP Semiconductors Product data sheet High voltage switching diode FEATURES • High switching speed: max. 50 ns • High continuous reverse voltage: 300 V • Repetitive peak forward current: 625 mA • Ultra small plastic SMD package. APPLICATIONS • High speed switching • High voltage switching. DESCRIPTION The BAS521 is a high-voltage switching diode fabricated in planar technology and encapsulated in an ultra small SOD523 (SC-79) plastic SMD package. PINNING BAS521 handbook, halfpage1 Marking code: L4. The marking bar indicates the cathode. ; PIN 1 2 Top view DESCRIPTION cathode anode 2 MAM408 Fig.1 Simplified outline (SOD523; SC-79), and symbol. LIMITING VALUES In accordance with the absolute Maximum Rating System (IEC 60134). SYMBOL VR VRRM IF IFRM IFSM Ptot Tstg Tj Tamb Note 1. Ts is the temperature at the soldering point of the cathode tab. PARAMETER continuous reverse voltage repetitive peak reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current total power dissipation storage temperature junction temperature operating ambient temperature Ts ≤ 90 °C; note 1 tp = 1 ms; δ = 0.25 tp = 1 µs; square wave; Tj = 25 °C prior to surge Ts ≤ 90 °C; note 1 CONDITIONS − − − − − − −65 − −65 MIN. MAX. 300 300 250 1 4.5 500 +150 150 +150 UNIT V V mA A A mW °C °C °C 2003 Aug 12 2 NXP Semiconductors Product data sheet High voltage switching diode ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VBR VF IR trr PARAMETER breakdown voltage forward voltage reverse current reverse recovery time IR = 100 µA IF = 100 mA; note 1 VR = 250 V VR = 250 V; Ta = 150 °C when switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at I R = 3 mA VR = 0 V; f = 1 MHz CONDITIONS − − − − MIN. 300 TYP. 340 0.95 30 40 16 − 1.1 150 100 50 BAS521 MAX. UNIT V V nA µA ns Cd Note diode capacitance − 0.4 5 pF 1. Pulse test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-s Rth j-a Notes 1. Soldering point of the cathode tab. 2. Refer to SOD523 (SC-79) standard mounting conditions. PARAMETER thermal resistance from junction to solder point thermal resistance from junction to ambient CONDITIONS note 1 note 2 VALUE 120 500 UNIT K/W K/W 2003 Aug 12 3 NXP Semiconductors Product data sheet High voltage switching diode GRAPHICAL DATA BAS521 handbook, halfpage 500 MHC618 IF (mA) 102 handbook, halfpage IR (µA) 10 MHC619 400 300 1 200 10−1 100 (1) (2) (3) 0 0 0.5 1 VF (V) 1.5 10−2 0 40 80 120 160 200 Tj (°C) (1) Tamb = 150 °C. (2) Tamb = 75 °C. (3) Tamb =25 °C. VR = VRmax; typical values. Fig.2 Forward current as a function of forward voltage; typical values. Fig.3 Reverse current as a function of junction temperature. handbook, halfpage 300 MHC620 handbook, halfpage 0.42 MHC621 IF (mA) 200 Cd (pF) 0.38 100 0.34 0 0 50 100 150 200 Tamb (°C) 0.3 0 10 20 30 VR (V) 40 Fig.4 Maximum permissible continuous forward current as a function of ambient temperature. Fig.5 Diode capacitance as a function of reverse voltage; typical values. 2003 Aug 12 4 NXP Semiconductors Product data sheet High voltage switching diode BAS521 102 handbook, full pagewidth IFSM (A) MBG703 10 1 10−1 1 Based on square wave currents. Tj = 25°C prior to surge. 10 102 103 tp (µs) 104 Fig.6 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 2003 Aug 12 5 NXP Semiconductors Product data sheet High voltage switching diode PACKAGE OUTLINE BAS521 Plastic surface mounted package; 2 leads SOD523 A c HE vMA D A 0 0.5 scale 1 mm 1 E bp 2 DIMENSIONS (mm are the original dimensions) UNIT mm Note 1. The marking bar indicates the cathode. A 0.65 0.58 bp 0.34 0.26 c 0.17 0.11 D 1.25 1.15 E 0.85 0.75 HE 1.65 1.55 v 0.1 (1) OUTLINE VERSION SOD523 REFERENCES IEC JEDEC JEITA SC-79 EUROPEAN PROJECTION ISSUE DATE 98-11-25 02-12-13 2003 Aug 12 6 NXP Semiconductors Product data sheet High voltage switching diode DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes 1. Please consult the most recently issued document before initiating or completing a design. PRODUCT STATUS(2) Development Qualification Production DEFINITION BAS521 This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 2003 Aug 12 7 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp8 Date of release: 2003 Aug 12 Document order number: 9397 750 11448
BAS521 价格&库存

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BAS521-7
  •  国内价格
  • 5+0.30743
  • 20+0.28047
  • 100+0.25352
  • 500+0.22656
  • 1000+0.21398
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库存:1643

BAS521WT
    •  国内价格
    • 1+0.04838

    库存:580

    BAS521,115
    •  国内价格
    • 5+0.20448
    • 20+0.18569
    • 100+0.1669
    • 500+0.14811
    • 1000+0.13934
    • 2000+0.13308

    库存:1967