BAT160S

DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D087 BAT160 series Schottky barrier double diodes Product data sheet Supersedes data of 1999 Mar 26 1999 Sep 20 NXP Semiconductors Product data sheet Schottky barrier double diodes FEATURES • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plastic SMD package. APPLICATIONS • Low power switched-mode power supplies • Rectification • Polarity protection. DESCRIPTION Planar Schottky barrier double diodes encapsulated in a SOT223 plastic SMD package. 1 2 3 MSB002 - 1 BAT160 series PINNING BAT160 PIN A 1 2 3 4 k1 n.c. k2 a1, a2 C a1 n.c. a2 k1, k2 S a1 n.c. k2 k1, a2 Fig.2 2 n.c. MGL171 4 1 3 BAT160A diode configuration (symbol). page 4 4 1 3 2 n.c. MGL172 Fig.3 Top view BAT160C diode configuration (symbol). MARKING TYPE NUMBER BAT160A BAT160C BAT160S MARKING CODE AT160A AT160C AT160S 4 Fig.1 Simplified outline (SOT223) and pin configuration. 1 2 n.c. 3 MGL173 Fig.4 BAT160S diode configuration (symbol). 1999 Sep 20 2 NXP Semiconductors Product data sheet Schottky barrier double diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VR IF IFSM IRSM Tstg Tj continuous reverse voltage continuous forward current non-repetitive peak forward current non-repetitive peak reverse current storage temperature junction temperature tp = 8.3 ms; half sinewave; JEDEC method tp = 100 μs − − − − PARAMETER CONDITIONS BAT160 series MIN. MAX. UNIT 60 1 10 0.5 +150 150 V A A A °C °C −65 − ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL Per diode VF forward voltage see Fig.5 IF = 100 mA IF = 1 A IF = 2 A IR reverse current VR = 60 V; note 1; see Fig.6 VR = 60 V; Tj = 100 °C; note 1; see Fig.6 Cd Note 1. Pulse test: tp = 300 μs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT223 standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 100 UNIT K/W diode capacitance f = 1 MHz; VR = 4 V; see Fig 7 400 650 850 350 8 60 mV mV mV μA mA pF PARAMETER CONDITIONS MAX. UNIT 1999 Sep 20 3 NXP Semiconductors Product data sheet Schottky barrier double diodes GRAPHICAL DATA BAT160 series 104 handbook, halfpage IF (mA) 103 MCD784 105 handbook, halfpage IR (μA) 104 (1) MCD768 103 (2) (3) 102 (2) 102 10 (3) (4) (4) 10 (1) 1 10−1 0 0.2 0.4 0.6 VF (V) 0.8 0 20 40 VR (V) 60 1 (1) Tamb = 125 °C. (2) Tamb = 100 °C. (3) Tamb = 75 °C. (4) Tamb = 25 °C. (1) Tamb = 125 °C. (2) Tamb = 100 °C. (3) Tamb = 75 °C. (4) Tamb = 25 °C. Fig.5 Forward current as a function of forward voltage; typical values. Fig.6 Reverse current as a function of reverse voltage; typical values. 103 handbook, halfpage MCD766 Cd (pF) 102 10 0 20 40 VR (V) 60 f = 1 MHz; Tamb = 25 °C. Fig.7 Diode capacitance as a function of reverse voltage; typical values. 1999 Sep 20 4 NXP Semiconductors Product data sheet Schottky barrier double diodes PACKAGE OUTLINE BAT160 series Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223 D B E A X c y HE b1 vMA 4 Q A A1 1 e1 e 2 bp 3 wM B detail X Lp 0 2 scale 4 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.8 1.5 A1 0.10 0.01 bp 0.80 0.60 b1 3.1 2.9 c 0.32 0.22 D 6.7 6.3 E 3.7 3.3 e 4.6 e1 2.3 HE 7.3 6.7 Lp 1.1 0.7 Q 0.95 0.85 v 0.2 w 0.1 y 0.1 OUTLINE VERSION SOT223 REFERENCES IEC JEDEC EIAJ SC-73 EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 1999 Sep 20 5 NXP Semiconductors Product data sheet Schottky barrier double diodes DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes PRODUCT STATUS(2) Development Qualification Production DEFINITION BAT160 series This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 1999 Sep 20 6 above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. 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Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/03/pp7 Date of release: 1999 Sep 20 Document order number: 9397 750 06097